RF1S540SM9A [RENESAS]
28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB;
| 型号： | RF1S540SM9A |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 局域网 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF540, RF1S540SM
TM
June 2000
File Number 2309.6
28A, 100V, 0.077 Ohm, N-Channel Power
MOSFETs
Features
• 28A, 100V
[ /Title These are N-Channel enhancement mode silicon gate
• r
= 0.077Ω
DS(ON)
power field effect transistors. They are advanced power
(IRF54
0,
RF1S5
40SM)
• Single Pulse Avalanche Energy Rated
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
/Sub-
ject
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
• Related Literature
(28A,
100V,
0.077
Ohm,
N-
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Formerly developmental type TA17421.
Symbol
Ordering Information
D
PART NUMBER
IRF540
RF1S540SM
PACKAGE
TO-220AB
TO-263AB
BRAND
IRF540
RF1S540SM
Chan-
nel
G
Power
MOS-
FETs)
/Autho
r ()
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S540SM9A.
S
/Key-
words
(Inter-
sil
Corpo-
ration,
N-
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
DRAIN (FLANGE)
SOURCE
Chan-
nel
Power
MOS-
FETs,
TO-
220AB
, TO-
263AB
)
/Cre-
ator ()
/DOCI
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
1
IRF540, RF1S540SM
o
Absolute Maximum Ratings
T = 25 C, Unless Otherwise Specified
C
IRF540, RF1S540SM
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
100
100
28
20
110
±20
120
0.8
V
V
A
A
A
V
W
DS
Drain to Gate Voltage (R
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
D
o
T
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
o
W/ C
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
230
-55 to 175
mJ
C
AS
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
T
J, STG
o
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
300
260
C
C
L
o
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to T = 150 C.
J
J
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 0V (Figure 10)
MIN
TYP
MAX
-
UNITS
V
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
I
= 250µA, V
100
-
-
-
-
-
-
DSS
D GS
V
V
V
V
V
V
= V , I = 250µA
DS
2
4
V
GS(TH)
GS
DS
DS
DS
GS
D
Zero Gate Voltage Drain Current
I
= 95V, V
= 0V
-
25
250
-
µA
µA
A
DSS
GS
= 0.8 x Rated BV
o
, V
DSS GS
= 0V, T = 150 C
-
J
On-State Drain Current (Note 2)
Gate to Source Leakage Current
I
> I
x r
, V
= 10V (Figure 7)
28
D(ON)
D(ON)
= ±20V
DS(ON) MAX GS
I
-
±100
nA
Ω
GSS
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
r
I
= 17A, V
= 10V (Figures 8, 9)
-
0.060 0.077
DS(ON)
D
GS
≥ 50V, I = 17A (Figure 12)
g
V
8.7
13
15
70
40
50
38
-
S
DS
DD
D
fs
t
V
= 50V, I ≈ 28A, R ≈ 9.1Ω, R = 1.7Ω
-
-
-
-
-
23
110
60
83
59
ns
ns
ns
ns
nC
d(ON)
D
G
L
MOSFET Switching Times are
Essentially Independent of Operating
Temperature
t
r
Turn-Off Delay Time
Fall Time
t
d(OFF)
t
f
Total Gate Charge
Q
V
= 10V, I = 28A, V
= 0.8 x Rated BV ,
DSS
g(TOT)
GS
D
DS
(Gate to Source + Gate to Drain)
I
= 1.5mA (Figure 14) Gate Charge is Essentially
g(REF)
Independent of Operating Temperature
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Q
Q
-
-
-
-
-
-
8
-
-
-
-
-
-
nC
nC
pF
pF
pF
nH
gs
21
gd
C
V
= 25V, V = 0V, f = 1MHz
GS
1450
550
100
3.5
ISS
DS
(Figure 11)
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Internal Drain Inductance
C
L
Measured From the
ModifiedMOSFETSymbol
D
Contact Screw on Tab To Showing the Internal
Center of Die
Devices Inductances
D
Measured From the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
-
-
4.5
7.5
-
-
nH
nH
L
D
Internal Source Inductance
L
Measured From the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
G
S
L
S
S
o
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
R
R
-
-
-
-
-
-
1.25
80
C/W
θJC
θJA
θJA
o
Free Air Operation
C/W
o
RF1S540SM Mounted on FR-4 Board with Minimum
Mounting Pad
62
C/W
2
IRF540, RF1S540SM
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Continuous Source to Drain Current
I
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Diode
-
-
-
-
28
A
A
SD
D
S
Pulse Source to Drain Current
(Note 3)
I
110
SDM
G
o
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
T = 25 C, I
J
= 27A, V
GS
= 0V (Figure 13)
-
-
2.5
300
1.9
V
SD
SD
SD
SD
o
t
T = 25 C, I
J
= 28A, dI /dt = 100A/µs
SD
70
0.2
150
1.0
ns
µC
rr
o
Q
T = 25 C, I
= 28A, dI /dt = 100A/µs
SD
RR
J
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
o
4. V
= 25V, starting T = 25 C, L = 440µH, R = 25Ω, peak I = 28A.
J G AS
DD
Typical Performance Curves Unless Otherwise Specified
30
1.2
1.0
0.8
0.6
0.4
0.2
0
24
18
12
6
0
25
50
75
100
150
125
175
125
o
0
25
50
75
100
175
150
o
T
, CASE TEMPERATURE ( C)
T , CASE TEMPERATURE ( C)
C
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
1
0.5
P
DM
0.2
0.1
0.1
t
0.05
1
t
2
0.02
0.01
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
J
x Z
+ T
SINGLE PULSE
DM
θJC
C
0.01
-5
-4
-3
-2
10
-1
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
10
1
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
3
IRF540, RF1S540SM
Typical Performance Curves Unless Otherwise Specified (Continued)
300
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
SINGLE PULSE
T
T
= MAX RATED
= 25 C
J
50
40
30
20
o
C
100
V
= 7V
= 6V
GS
V
= 10V
= 8V
GS
V
GS
100µs
V
GS
10
OPERATION IN THIS
AREA MAY BE
1ms
10ms
100
LIMITED BY r
DS(ON)
V
= 5V
= 4V
GS
10
0
V
GS
1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
300
0
12
24
36
48
60
V
V , DRAIN TO SOURCE VOLTAGE (V)
DS
DS
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
50
100
10
1
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
≥ 50V
DS
V
= 8V
GS
40
30
20
10
V
= 7V
GS
V
= 10V
GS
V
= 6V
GS
o
o
175 C
25 C
V
= 5V
= 4V
GS
V
GS
0
0.1
0
2
3
4
5
1
0
2
4
6
8
10
V
, DRAIN TO SOURCE VOLTAGE (V)
V
, GATE TO SOURCE VOLTAGE (V)
DS
GS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
1.0
0.8
3.0
2.4
1.8
1.2
0.6
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 10V, I = 28A
GS
D
0.6
0.4
V
= 10V
0.2
0
GS
V
= 20V
GS
0
25
75
I , DRAIN CURRENT (A)
100
125
50
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
o
T , JUNCTION TEMPERATURE ( C)
D
J
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4
IRF540, RF1S540SM
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
1.15
1.05
0.95
0.85
0.75
3000
2400
1800
1200
600
I
= 250µA
D
V
= 0V, f = 1MHz
GS
C
C
C
= C + C
GS GD
ISS
= C
≈ C + C
RSS
OSS
GD
DS GD
C
ISS
C
OSS
C
RSS
0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
o
1
10
, DRAIN TO SOURCE VOLTAGE (V)
100
T , JUNCTION TEMPERATURE ( C)
V
DS
J
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
20
1000
PULSE DURATION = 80µs
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
DS
V
≥ 50V
16
12
8
o
25 C
100
o
o
175 C
175 C
o
25 C
10
1
4
0
0
10
20
30
40
50
0
0.6
1.2
1.8
2.4
3.0
I
, DRAIN CURRENT (A)
V , SOURCE TO DRAIN VOLTAGE (V)
SD
D
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
I
= 28A
D
V
= 50V
DS
16
12
8
V
= 20V
DS
V
= 80V
DS
4
0
0
12
24
36
48
60
Q , GATE CHARGE (nC)
g
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5
IRF540, RF1S540SM
Test Circuits and Waveforms
V
DS
BV
DSS
t
L
P
V
DS
I
AS
VARY t TO OBTAIN
P
+
V
DD
R
REQUIRED PEAK I
G
AS
V
DD
-
V
GS
DUT
t
P
I
0V
AS
0
0.01Ω
t
AV
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
t
t
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
r
V
R
L
DS
90%
90%
+
V
DD
10%
10%
R
G
0
0
-
DUT
90%
50%
V
GS
50%
PULSE WIDTH
10%
V
GS
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
V
DS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
V
DD
Q
g(TOT)
V
SAME TYPE
AS DUT
GS
Q
gd
12V
BATTERY
0.2µF
50kΩ
Q
gs
0.3µF
D
S
V
DS
G
DUT
0
0
I
g(REF)
I
G(REF)
0
V
DS
I CURRENT
D
SAMPLING
RESISTOR
I
CURRENT
SAMPLING
RESISTOR
G
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
6
IRF540, RF1S540SM
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
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7
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