RJH60V1BDPE_15 [RENESAS]
600 V - 8 A - IGBT Application: Inverter;
| 型号： | RJH60V1BDPE_15 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 600 V - 8 A - IGBT Application: Inverter 双极性晶体管 |
| 文件： | 总10页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
RJH60V1BDPE
600 V - 8 A - IGBT
Application: Inverter
R07DS0743EJ0200
Rev.2.00
May 25, 2011
Features
Short circuit withstand time (6 s typ.)
Low collector to emitter saturation voltage
V
CE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode (25 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 110 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load)
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
C
4
1. Gate
2. Collector
3. Emitter
4. Collector
G
1
2
3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
VCES / VR
VGES
Ratings
Unit
V
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
600
±30
V
Collector current
Tc = 25°C
IC
16
A
Tc = 100°C
IC
8
A
Collector peak current
ic(peak) Note1
32
A
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
iDF
8
32
A
iD(peak) Note1
A
Note2
PC
52
W
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
j-c Note2
j-cd Note2
Tj
2.38
°C/ W
°C/ W
°C
°C
1.75
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
R07DS0743EJ0200 Rev.2.00
May 25, 2011
Page 1 of 9
RJH60V1BDPE
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to emitter breakdown
voltage
V(BR)CES
600
—
—
V
IC =10 A, VGE = 0
Zero gate voltage collector current
/ Diode reverse current
ICES / IR
—
—
5
A
VCE = 600 V, VGE = 0
Gate to emitter leak current
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
Qg
—
5.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3
—
—
±1
7.5
2.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
A
V
VGE = ±30 V, VCE = 0
VCE = 10 V, IC = 1 mA
IC = 8 A, VGE = 15 V Note3
IC =16 A, VGE = 15 V Note3
VCE = 25 V
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
1.6
2.2
300
27
V
V
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
s
VGE = 0
f = 1 MHz
12
19
VGE = 15 V
VCE = 300 V
Qge
Qgc
td(on)
tr
3.5
11
IC = 8 A
30
VCC = 300 V
VGE = 15 V
12
IC = 8 A
Rg = 5
(Inductive load)
Turn-off delay time
Fall time
td(off)
tf
55
110
0.017
0.11
0.13
6
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Short circuit withstand time
Etotal
tsc
Tc = 100 C
VGE 360 V, VGE = 15 V
FRD Forward voltage
VF
trr
—
—
—
—
2.5
25
―
—
—
—
V
ns
C
A
IF = 8 A Note3
FRD reverse recovery time
FRD reverse recovery charge
FRD peak reverse recovery current
Notes: 3. Pulse test.
IF = 8 A
diF/dt = 100 A/s
Qrr
Irr
0.01
1.0
R07DS0743EJ0200 Rev.2.00
May 25, 2011
Page 2 of 9
RJH60V1BDPE
Preliminary
Main Characteristics
Collector Dissipation vs.
Maximum DC Collector Current vs.
Case Temperature
Case Temperature
80
60
40
20
0
20
16
12
8
4
0
0
25 50 75 100 125 150 175
Case Temperature Tc (°C)
0
25 50 75 100 125 150 175
Case Temperature Tc (°C)
Maximum Safe Operation Area
Turn-off Safe Operation Area
1000
100
10
50
40
30
20
10
0
1
0.1
Tc = 25°C
Single pulse
0.01
1
10
100
1000
0
200
400
600
800
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
Typical Output Characteristics
32
24
16
8
32
24
16
8
Tc = 25
Pulse Test
°
C
Tc = 150
Pulse Test
°C
15 V
15 V
12 V
12 V
10 V
10 V
VGE = 8 V
4
VGE = 8 V
4
0
0
0
1
2
3
5
0
1
2
3
5
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
R07DS0743EJ0200 Rev.2.00
May 25, 2011
Page 3 of 9
RJH60V1BDPE
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
4
3
2
1
5
4
3
2
1
Tc = 25
Pulse Test
°
C
Tc = 150°C
Pulse Test
IC = 16 A
8 A
IC = 16 A
8 A
8
10
12
14
16
18
20
8
10
12
14
16
18
20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
Typical Transfer Characteristics
40
4.0
VGE = 15 V
Pulse Test
VCE = 10 V
Pulse Test
3.5
3.0
2.5
2.0
1.5
1.0
30
20
10
0
IC = 16 A
Tc = 25°C
150°C
8 A
0
4
8
12
16
20
−25
0
25 50 75 100 125 150
Case Temparature Tc (°C)
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
Frequency Characteristics (Typical)
8
6
4
2
0
10
8
0
IC = 10 mA
Collector current wave
(Square wave)
6
1 mA
4
2
Tj = 125°C, Tc = 90°C
VCE = 400 V, VGE = 15 V
Rg = 5 Ω, duty = 50%
VCE = 10 V
Pulse Test
0
−25
0
25 50 75 100 125 150
1
10
100
1000
Case Temparature Tc (°C)
Frequency f (kHz)
R07DS0743EJ0200 Rev.2.00
May 25, 2011
Page 4 of 9
RJH60V1BDPE
Preliminary
Switching Characteristics (Typical) (1)
Switching Characteristics (Typical) (2)
10
1000
100
10
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
t
f
1
0.1
t
d(off)
t
d(on)
Eoff
Eon
t
r
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tc = 150
°
C
1
0.01
1
10
100
1
10
100
Collector Current IC (A)
(Inductive load)
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (3)
Switching Characteristics (Typical) (4)
1
1000
100
10
VCC = 300 V, VGE = 15 V
IC = 8 A, Tc = 150
°C
t
f
Eoff
Eon
0.1
t
d(off)
t
d(on)
VCC = 300 V, VGE = 15 V
t
IC = 8 A, Tc = 150°C
r
0.01
1
10
100
1
10
100
Gate Registance Rg (Ω)
Gate Registance Rg (Ω)
(Inductive load)
(Inductive load)
Switching Characteristics (Typical) (6)
Switching Characteristics (Typical) (5)
1000
100
10
1
VCC = 300 V, VGE = 15 V
IC = 8 A, Rg = 5 Ω
VCC = 300 V, VGE = 15 V
C =8 A, Rg = 5 Ω
I
t
f
Eoff
0.1
t
d(off)
Eon
t
d(on)
t
r
0.01
25
50
75
100
125
150
25
50
75
100
125
150
Case Temperature Tc (°C)
(Inductive load)
Case Temperature Tc (°C)
(Inductive load)
R07DS0743EJ0200 Rev.2.00
May 25, 2011
Page 5 of 9
RJH60V1BDPE
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage
Dynamic Input Characteristics (Typical)
10000
800
600
400
200
0
16
12
8
VGE
VCC = 300 V
C = 8 A
Tc = 25
VGE = 0 V
f = 1 MHz
Ta = 25
I
°C
°
C
1000
100
10
Cies
Coes
Cres
4
VCE
1
0
20
0
4
8
12
16
0
50
100 150 200 250 300
Gate Charge Qg (nc)
Collector to Emitter Voltage VCE (V)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
300
250
200
150
100
50
0.20
0.16
0.12
0.08
0.04
VCC = 300 V
IF = 8 A
VCC = 300 V
IF = 8 A
Tc = 150°C
Tc = 150
°
C
C
25°C
25
°
0
0
0
40
80
120
160
200
0
40
80
120
160
200
Diode Current Slope diF/dt (A/μs)
Diode Current Slope diF /dt (A/μs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
Forward Current vs. Forward Voltage (Typical)
16
12
8
40
VCC = 300 V
IF = 8 A
VGE = 0 V
Pulse Test
30
20
Tc = 150°C
Tc = 150
°
C
25°C
4
10
0
25°
C
0
0
40
80
120
160
200
0
1
2
3
4
Diode Current Slope diF/dt (A/μs)
C-E Diode Forward Voltage VCEF (V)
R07DS0743EJ0200 Rev.2.00
May 25, 2011
Page 6 of 9
RJH60V1BDPE
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
10
1
Tc = 25°C
D = 1
0.5
θ – c(t) = γs (t) • θ – c
j
j
θ – c = 2.38°C/W, Tc = 25°C
j
0.05
0.02
0.01
1 shot pulse
0.1
PW
T
PDM
D =
PW
T
0.01
100 μ
1 m
10 m
100 m
1
10
100
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
3
1
Tc = 25°C
D = 1
0.5
θ – c(t) = γs (t) • θ – c
j
j
θ – c = 1.75°C/W, Tc = 25°C
j
0.3
0.1
PW
T
PDM
D =
0.05
0.02
0.01
1 shot pulse
PW
T
100 μ
1 m
100 m
1
10
100
10 m
Pulse Width PW (s)
R07DS0743EJ0200 Rev.2.00
May 25, 2011
Page 7 of 9
RJH60V1BDPE
Preliminary
Switching Time Test Circuit
Waveform
90%
VGE
Diode clamp
10%
L
IC
90%
90%
D.U.T
VCC
Rg
10%
tf
10%
tr
td(off)
td(on)
Diode Reverse Recovery Time Test Circuit
VCC
Waveform
IF
D.U.T
diF/dt
trr
L
IF
0
Irr
0.5 Irr
0.9 Irr
Rg
R07DS0743EJ0200 Rev.2.00
May 25, 2011
Page 8 of 9
RJH60V1BDPE
Preliminary
Package Dimension
Package Name
LDPAK(S)-(1)
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
Previous Code
MASS[Typ.]
1.30g
Unit: mm
LDPAK(S)-(1) / LDPAK(S)-(1)V
4.44 ± 0.2
7.8
6.6
10.2 ± 0.3
1.3 ± 0.15
2.49 ± 0.2
+ 0.2
– 0.1
0.1
2.2
1.37 ± 0.2
0.4 ± 0.1
+ 0.2
– 0.1
1.3 ± 0.2
0.86
2.54 ± 0.5
2.54 ± 0.5
Ordering Information
Orderable Part Number
Quantity
Shipping Container
RJH60V1BDPE-00#J3
1000 pcs
Taping
R07DS0743EJ0200 Rev.2.00
May 25, 2011
Page 9 of 9
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