RJK03C1DPB [RENESAS]
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching; 硅N沟道功率MOS FET与肖特基二极管的功率开关![RJK03C1DPB](http://pdffile.icpdf.com/pdf1/p00159/img/icpdf/RJK03_884349_icpdf.jpg)
型号: | RJK03C1DPB |
厂家: | ![]() |
描述: | Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching |
文件: | 总7页 (文件大小:263K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Preliminary
RJK03C1DPB
Silicon N Channel Power MOS FET with Schottky Barrier Diode
REJ03G1830-0310
Power Switching
Rev.3.10
Sep 29, 2009
Features
•
•
•
•
•
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 1.7 mΩ typ. (at VGS = 10 V)
•
•
Pb-free
Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
6
7 8
D D D D
5
1, 2, 3 Source
4
4
5
Gate
Drain
G
4
3
2
1
S
1
S S
3
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
30
Unit
V
±20
60
V
A
Note1
Drain peak current
ID(pulse)
240
60
A
Body-drain diode reverse drain current
Avalanche current
IDR
A
Note 2
IAP
28
A
Note 2
Avalanche energy
EAR
78.4
65
mJ
W
Channel dissipation
Pch Note3
θch-C
Tch
Channel to Case Thermal Resistance
Channel temperature
1.92
150
°C/W
°C
°C
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
REJ03G1830-0310 Rev.3.10 Sep 29, 2009
Page 1 of 6
RJK03C1DPB
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
30
—
—
V
ID = 10 mA, VGS = 0
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
±0.5
1
μA
m A
V
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
—
2.5
2.2
3.1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
VDS = 10 V, ID = 1 mA
ID = 30 A, VGS = 10 V Note4
ID = 30 A, VGS = 4.5 V Note4
ID = 30 A, VDS = 10 V Note4
Static drain to source on state
resistance
1.7
2.2
120
6000
1230
550
0.5
42
mΩ
mΩ
S
Forward transfer admittance
Input capacitance
Ciss
Coss
Crss
Rg
pF
pF
pF
Ω
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Qg
nC
nC
nC
ns
ns
ns
ns
V
VDD = 10 V, VGS = 4.5 V,
ID = 60 A
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Qgs
Qgd
td(on)
tr
18
16
18
VGS = 10 V, ID = 30 A,
VDD ≅ 10 V, RL = 0.33 Ω,
Rg = 4.7 Ω
19
Turn-off delay time
Fall time
td(off)
tf
75
15
Body–drain diode forward voltage
VDF
0.39
40
IF = 2 A, VGS = 0 Note4
Body–drain diode reverse
recovery time
trr
ns
IF = 60 A, VGS = 0
diF/ dt = 100 A/ μs
Notes: 4. Pulse test
REJ03G1830-0310 Rev.3.10 Sep 29, 2009
Page 2 of 6
RJK03C1DPB
Preliminary
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
80
1000
100
10
60
40
20
1 ms
PW = 10 ms
Operation in
this area is
limited by RDS(on)
1
Tc = 25°C
1 shot Pulse
0.1
0
0.1
1
10
100
50
100
150
200
Drain to Source Voltage VDS (V)
Case Temperature Tc (°C)
Typical Output Characteristics
Typical Transfer Characteristics
100
80
100
80
Pulse Test
4.5 V
10 V
VDS = 10 V
Pulse Test
2.8 V
2.6 V
2.4 V
60
60
40
40
25°C
Tc = 75°C
20
20
V
GS = 2.2 V
–25°C
0
0
5
1
2
3
4
2
4
6
8
10
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
10
200
Pulse Test
Pulse Test
150
100
50
3
VGS = 4.5 V
10 V
1
0.3
0.1
I
D = 20 A
10 A
5 A
0
4
8
12
16
20
1
3
10
30
100 300 1000
Gate to Source Voltage VGS (V)
Drain Current ID (A)
REJ03G1830-0310 Rev.3.10 Sep 29, 2009
Page 3 of 6
RJK03C1DPB
Preliminary
Static Drain to Source on State Resistance
vs. Temperature
Typical Capacitance vs.
Drain to Source Voltage
10
10000
3000
1000
Pulse Test
Ciss
8
6
Coss
Crss
300
100
ID = 5 A, 10 A, 20 A
4
VGS = 4.5 V
10 V
2
0
30
10
VGS = 0
5 A, 10 A, 20 A
f = 1 MHz
0
10
20
30
–25
0
25
50 75 100 125 150
Case Temperature Tc
(°C)
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
Dynamic Input Characteristics
100
50
40
30
20
10
0
20
16
12
8
ID = 60 A
Pulse Test
VGS
10 V
80
60
40
20
VDD = 25 V
10 V
5 V
VDS
VGS = 0, –5V
4
VDD = 25 V
10 V
0
200
0
0.4
0.8
1.2
1.6
2.0
0
40
80
120
160
Gate Charge Qg (nc)
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
100
80
60
40
20
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
REJ03G1830-0310 Rev.3.10 Sep 29, 2009
Page 4 of 6
RJK03C1DPB
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
PW
T
D =
PDM
0.03
0.01
PW
T
1 m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
VDSS
1
2
2
L • IAP •
EAR
=
L
VDSS – VDD
VDS
Monitor
IAP
Monitor
V(BR)DSS
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
15 V
VDD
0
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Rg
10%
10%
Vin
RL
Vout
10%
VDS
= 10 V
Vin
10 V
90%
90%
t
t
t
t
f
d(on)
r
d(off)
REJ03G1830-0310 Rev.3.10 Sep 29, 2009
Page 5 of 6
RJK03C1DPB
Preliminary
Package Dimensions
Package Name
LFPAK
JEITA Package Code
SC-100
RENESAS Code
PTZZ0005DA-A
Previous Code
LFPAKV
MASS[Typ.]
0.080g
Unit: mm
4.9
5.3 Max
0.25–+00..0035
3.3
4.0 0.2
5
0.20 +–00..0035
1
4
0° – 8°
0.75 Max
0.10
1.27
0.40 0.06
0.25
M
(Ni/Pd/Au plating)
Ordering Information
Part No.
Quantity
Shipping Container
RJK03C1DPB-00-J5
2500 pcs
Taping
REJ03G1830-0310 Rev.3.10 Sep 29, 2009
Page 6 of 6
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a
result of errors or omissions in the information included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability
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or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality
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have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.
RENESAS SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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