RJK0629DPN-00-T2 [RENESAS]
60V, 85A, 4.5m max. N Channel Power MOS FET High-Speed Switching Use; 60V ， 85A ， 4.5米最大。 N沟道功率MOS FET高速开关应用
| 型号： | RJK0629DPN-00-T2 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 60V, 85A, 4.5m max. N Channel Power MOS FET High-Speed Switching Use |
| 文件： | 总7页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
RJK0629DPN
60V, 85A, 4.5m max.
R07DS1062EJ0200
(Previous: REJ03G1873-0100)
Rev.2.00
N Channel Power MOS FET
High-Speed Switching Use
Apr 09, 2013
Features
VDSS: 60 V
DS(on): 4.5 m (Max)
ID: 85 A
R
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
4
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
1 G
1
2
3
S
3
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Symbol
Value
60
Unit
VDSS
V
V
VGSS
20
85
Drain current
ID
ID (pulse) Note
IDR
A
1
Drain peak current
A
340
85
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
A
1
IDR (pulse) Note
A
340
55
2
Note
IAP
A
3
Channel dissipation
Pch Note
ch-c
Tch
W
C/W
C
C
100
1.25
150
Channel to case thermal impedance
Channel temperature
Storage temperature
Tstg
–55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. Tc = 25C, Tch 150C, L = 100 H
3. Value at Tc = 25C
R07DS1062EJ0200 Rev.2.00
Apr 09, 2013
Page 1 of 6
RJK0629DPN
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Symbol
V(BR)DSS
V(BR)GSS
IDSS
Min
60
20
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
ID = 100 A, VGS = 0
IG = 100 A, VDS = 0
VDS = 60 V, VGS = 0
VGS = 20 V, VDS = 0
ID = 1 mA, VDS = 10 V
ID = 43A, VGS = 10 VNote
ID = 43A, VGS = 10 VNote
—
—
V
—
1
A
A
V
IGSS
—
10
2.0
194
4.5
6.6
—
Gate to source cutoff voltage
Static drain to source on state voltage
VGS(off)
VDS(on)
RDS(on)
—
4
4
161
3.75
4.9
4100
1000
780
85
mV
m
m
pF
pF
pF
nC
nC
nC
ns
Static drain to source on state
resistance
4
ID = 43 A, VGS = 4.5 VNote
Input capacitance
Ciss
Coss
Crss
Qg
VDS = 10 V, VGS = 0
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Total gate charge
—
—
—
VDD = 25 V, VGS = 10 V,
ID = 85 A
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Qgs
Qgd
td(on)
tr
11
—
25
—
20
—
VDD = 30V, ID= 43A,
VGS = 10 V, RG = 4.7
40
—
ns
Turn-off delay time
Fall time
td(off)
tf
100
40
—
ns
—
ns
4
Body-drain diode forward voltage
VDF
trr
0.92
50
1.2
—
V
IF = 85 A, VGS = 0Note
Body-drain diode reverse recovery
time
ns
IF = 85 A, VGS = 0,
diF/dt = 100 A/s
Note: 4. Pulse test
R07DS1062EJ0200 Rev.2.00
Apr 09, 2013
Page 2 of 6
RJK0629DPN
Preliminary
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
100
10
200
150
100
50
Operation in
this area is
limited by RDS(on)
1
0.1
Tc = 25°C
1 shot Pulse
0.01
0
50
100
150
200
0.1
1
10
100
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
10 V
5 V
Typical Transfer Characteristics
100
80
60
40
20
100
10
3 V
Tc = 175°C
25°C
1
0.1
VGS = 2.7 V
−40°C
0.01
0.001
V
DS = 10 V
Tc = 25°C
Pulse Test
Pulse Test
0
5
10
0
1
2
3
4 5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
20
100
ID = 43 A
Tc = 25°C
Pulse Test
Pulse Test
15
Tc = 175°C
10
10
VGS = 4.5 V
25°C
5
10 V
−40°C
0
1
20
100
16
0
4
8
12
1
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
R07DS1062EJ0200 Rev.2.00
Apr 09, 2013
Page 3 of 6
RJK0629DPN
Preliminary
Static Drain to Source on State Resistance
vs. Temperature
Typical Capacitance vs.
Drain to Source Voltage
20
16
12
8
10000
Pulse Test
D = 43 A
I
Ciss
3000
1000
VGS = 4.5 V
Coss
Crss
300
100
4
10 V
Tc = 25°C
GS = 0
f = 1 MHz
V
0
−50
0
5
10
15
20
25
30
0
50
100
150
200
Drain to Source Voltage VDS (V)
Case Temperature Tc (°C)
Reverse Drain Current vs.
Source to Drain Voltage
Dynamic Input Characteristics
50
20
100
80
60
40
20
Tc = 25°C
ID = 85 A
Tc = 25°C
Pulse Test
10 V
VGS
40
30
20
10
16
12
8
VDD = 25 V
10 V
5 V
VDS
VGS = 0, −5 V
VDD = 25 V
10 V
5 V
4
0
0
0.4
0.8
1.2
1.6
2.0
0
40
80
120
160
200
Source to Drain Voltage VSD (V)
Gate Charge Qg (nC)
Maximum Avalanche Energy vs.
Channel Temperature Derating
500
400
300
200
IAP = 55 A
VDD = 25 V
duty < 0.1 %
Rg ≥ 50 Ω
100
0
25
50
75
100 125 150 175
Channel Temperature Tch (°C)
R07DS1062EJ0200 Rev.2.00
Apr 09, 2013
Page 4 of 6
RJK0629DPN
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
10
D = 1
1
θch – c(t) = γs (t) • θch – c
θch – c = 1.25°C/W, Tc = 25°C
0.1
0.01
PW
T
PDM
D =
PW
T
100 μ
1 m
10 m
100 m
1
10
10 μ
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
VDSS
VDSS – VDD
1
2
L
2
L • IAP •
EAS
=
VDS
Monitor
IAP
Monitor
V(BR)DSS
Rg
VDD
IAP
D. U. T
VDS
ID
Vin
50 Ω
15 V
VDD
0
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Rg
10%
10%
Vin
RL
Vout
10%
VDS
= 30 V
Vin
10 V
90%
90%
t
t
t
d(off)
t
f
d(on)
r
R07DS1062EJ0200 Rev.2.00
Apr 09, 2013
Page 5 of 6
RJK0629DPN
Preliminary
Package Dimensions
Package Name
TO-220AB
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Previous Code
MASS[Typ.]
1.8g
Unit: mm
TO-220AB / TO-220ABV
11.5 Max
10.16 0.2
4.44 0.2
9.5
8.0
+0.1
–0.08
1.26 0.15
φ 3.6
2.7 Max
1.5 Max
0.76 0.1
0.5 0.1
2.54 0.5
2.54 0.5
Ordering Information
Part No.
Quantity
Shipping Container
RJK0629DPN-00-T2
600 pcs
Box (Tube)
R07DS1062EJ0200 Rev.2.00
Apr 09, 2013
Page 6 of 6
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2013 Renesas Electronics Corporation. All rights reserved.
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