RJK2006DPE-TL-E [RENESAS]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关型号: | RJK2006DPE-TL-E |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | Silicon N Channel MOS FET High Speed Power Switching |
文件: | 总5页 (文件大小:66K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0512-0100
Rev.1.00
Jan.14.2005
Features
•
•
•
Low on-resistance
Low leakage current
High speed switching
Outline
LDPAK
D
4
4
4
1. Gate
2. Drain
3. Source
4. Drain
G
1
2
1
3
2
3
1
RJK2006DPE
2
3
RJK2006DPF
S
RJK2006DPJ
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Symbol
Ratings
200
Unit
VDSS
VGSS
ID
V
V
±30
Drain current
40
A
Note1
Drain peak current
ID (pulse)
IDR
100
A
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
40
A
Note1
IDR (pulse)
100
A
Note3
IAP
27
A
Note3
Avalanche energy
EAR
48.6
100
mJ
W
°C/W
°C
°C
Channel dissipation
Pch Note2
θch-c
Tch
Channel to case thermal impedance
Channel temperature
1.25
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.1.00, Jan.14.2005, page 1 of 4
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
IDSS
Min
200
—
Typ
—
Max
—
Unit
V
Test conditions
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
ID = 10 mA, VGS = 0
—
1
µA
µA
V
VDS = 200 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 20 A, VDS = 10 V Note4
ID = 20 A, VGS = 10 VNote4
IGSS
—
—
±0.1
4.5
—
VGS(off)
|yfs|
3.0
15
—
26
S
Static Drain to Source on state
resistance
RDS(on)
—
0.052
0.059
Ω
Input capacitance
Ciss
Coss
Crss
td(on)
tr
—
—
—
—
—
—
—
—
—
—
—
—
—
1800
330
43
—
—
—
—
—
—
—
—
—
—
1.5
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS = 25 V
VGS = 0
Output capacitance
f = 1 MHz
Reverse transfer capacitance
Turn-on delay time
30
ID = 20 A
VGS = 10 V
Rise time
180
85
RL = 5 Ω
Rg = 10 Ω
Turn-off delay time
td(off)
tf
Fall time
100
43
Total Gate charge
Qg
VDD = 160 V
VGS = 10 V
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Qgs
Qgd
VDF
trr
11
ID = 40 A
IF = 40 A, VGS = 0 Note4
20
1.0
150
0.8
ns
µC
IF = 40 A, VGS = 0
diF/dt = 100 A/µs
Body-Drain diode reverse recovery
charge
Qrr
Notes: 4. Pulse test
Rev.1.00, Jan.14.2005, page 2 of 4
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Package Dimensions
• RJK2006DPJ
As of January, 2003
Unit: mm
4.44 0.2
1.ꢀ 0.15
10.2 0.ꢀ
1.ꢀ 0.2
1.ꢀ7 0.2
2.49 0.2
+ 0.2
0.86
– 0.1
0.76 0.1
2.54 0.5
0.4 0.1
2.54 0.5
Package Code
JEDEC
LDPAK (L)
—
JEITA
—
Mass (reference value)
1.40 g
• RJK2006DPE
As of January, 2003
Unit: mm
4.44 0.2
7.8
6.6
10.2 0.ꢀ
1.ꢀ 0.15
2.49 0.2
+ 0.2
– 0.1
0.1
2.2
1.ꢀ7 0.2
0.4 0.1
+ 0.2
– 0.1
1.ꢀ 0.2
2.54 0.5
0.86
2.54 0.5
Package Code
JEDEC
LDPAK (S)-(1)
—
JEITA
—
Mass (reference value)
1.ꢀ0 g
Rev.1.00, Jan.14.2005, page 3 of 4
RJK2006DPJ, RJK2006DPE, RJK2006DPF
• RJK2006DPF
As of January, 2003
Unit: mm
4.44 0.2
7.8
6.6
10.2 0.ꢀ
1.ꢀ 0.15
2.49 0.2
+ 0.2
– 0.1
0.1
2.2
1.ꢀ7 0.2
0.4 0.1
+ 0.2
– 0.1
1.ꢀ 0.2
0.86
2.54 0.5
2.54 0.5
Package Code
JEDEC
LDPAK (S)-(2)
—
JEITA
—
Mass (reference value)
1.ꢀ5 g
Ordering Information
Part Name
Quantity
Shipping Container
RJK2006DPE-TL-E
1000 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.1.00, Jan.14.2005, page 4 of 4
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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