RJL5020DPK [RENESAS]
Silicon N Channel MOSFET High Speed Power Switching; 硅N沟道MOSFET高速电源开关
| 型号： | RJL5020DPK |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOSFET High Speed Power Switching |
| 文件： | 总7页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
RJL5020DPK
Silicon N Channel MOS FET
High Speed Power Switching
R07DS0239EJ0500
(Previous: REJ03G1733-0400)
Rev.5.00
Jan 07, 2011
Features
Built-in fast recovery diode
Low on-resistance
RDS(on) = 0.105 typ. (at ID = 19 A, VGS = 10 V, Ta = 25C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
1. Gate
2. Drain (Flange)
3. Source
G
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
VDSS
VGSS
ID
Ratings
500
Unit
V
Gate to source voltage
±30
V
Drain current
38
A
Note1
Drain peak current
ID (pulse)
IDR
114
A
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
38
A
Note1
IDR (pulse)
114
A
Note3
IAP
12.5
A
Note3
Avalanche energy
EAR
8.6
mJ
W
Channel dissipation
Pch Note2
ch-c
Tch
200
Channel to case thermal impedance
Channel temperature
0.625
150
C/W
C
C
Storage temperature
Tstg
–55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
R07DS0239EJ0500 Rev.5.00
Jan 07, 2011
Page 1 of 6
RJL5020DPK
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
IDSS
Min
500
—
Typ
—
Max
—
Unit
V
Test conditions
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
ID = 10 mA, VGS = 0
—
10
A
A
V
VDS = 500 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 19 A, VGS = 10 V Note4
IGSS
—
—
±0.1
4.0
VGS(off)
RDS(on)
1.5
—
—
Static drain to source on state
resistance
0.105
0.135
Input capacitance
Ciss
Coss
Crss
td(on)
tr
—
—
—
—
—
—
—
—
—
—
—
—
4750
520
61
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS = 25 V
VGS = 0
Output capacitance
Reverse transfer capacitance
Turn-on delay time
f = 1 MHz
—
45
—
ID = 19 A
VGS = 10 V
Rise time
90
—
RL = 13.2
Rg = 10
Turn-off delay time
td(off)
tf
215
154
140
19
—
Fall time
—
Total gate charge
Qg
—
VDD = 400 V
V
GS = 10 V
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Qgs
Qgd
VDF
trr
—
ID = 38 A
IF = 38 A, VGS = 0 Note4
57
—
0.94
170
1.60
—
ns
IF = 38 A, VGS = 0
diF/dt = 100 A/s
Notes: 4. Pulse test
R07DS0239EJ0500 Rev.5.00
Jan 07, 2011
Page 2 of 6
RJL5020DPK
Preliminary
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
100
80
60
40
20
0
1000
100
10
Ta = 25°C
Pulse Test
5.2 V
5.4 V
6 V
10 V
5 V
4.8 V
4.6 V
1
Operation in this
area is limited by
RDS(on)
4.4 V
4.2 V
0.1
0.01
VGS = 4 V
Tc = 25°C
1 shot
0.1
1
10
100
1000
0
4
8
12
16
20
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Typical Transfer Characteristics
1
100
10
1
VGS = 10 V
Ta = 25°C
Pulse Test
VDS = 10 V
Pulse Test
0.1
25°C
Tc = 75°C
−25°C
0.01
0.1
0
2
4
6
8
1
10
100
Drain Current ID (A)
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
Body-Drain Diode Reverse
Recovery Time (Typical)
1000
100
10
0.5
V
GS = 10 V
Pulse Test
0.4
0.3
0.2
0.1
0
19 A
ID = 38 A
10 A
di / dt = 100 A / μs
V
GS = 0, Ta = 25°C
1
10
100
-25
0
25 50 75 100 125 150
Reverse Drain Current IDR (A)
Case Temperature Tc (°C)
R07DS0239EJ0500 Rev.5.00
Jan 07, 2011
Page 3 of 6
RJL5020DPK
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics (Typical)
100000
10000
1000
800
16
VGS
ID = 38 A
Ta = 25 °C
V
GS = 0
f = 1 MHz
Ta = 25°C
600
12
8
VDD = 400 V
Ciss
250 V
100 V
VDS
400
Coss
Crss
100
200
0
4
VDD = 400 V
250 V
100 V
0
10
0
0
40
80
120
160
200
50
100
150
200
250
Drain to Source Voltage VDS (V)
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
100
5
4
3
VDS = 10 V
VGS = 0
Ta = 25 °C
Pulse Test
80
60
I
D = 10 mA
1 mA
0.1 mA
40
2
1
0
20
0
0
0.4
0.8
1.2
1.6
2.0
-25
0
25 50 75 100 125 150
Case Temperature Tc (°C)
Source to Drain Voltage VSD (V)
R07DS0239EJ0500 Rev.5.00
Jan 07, 2011
Page 4 of 6
RJL5020DPK
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 0.625°C/W, Tc = 25°C
PW
T
PDM
D =
0.03
0.01
PW
T
10 μ
100 μ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
Waveform
Vout
Monitor
90%
D.U.T.
10%
10%
RL
Vin
10 Ω
Vout
10%
VDD
= 250 V
Vin
10 V
90%
90%
t
t
t
t
f
d(on)
r
d(off)
R07DS0239EJ0500 Rev.5.00
Jan 07, 2011
Page 5 of 6
RJL5020DPK
Preliminary
Package Dimensions
Package Name
TO-3P
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
Previous Code
MASS[Typ.]
5.0g
TO-3P / TO-3PV
Unit: mm
4.8 ± 0.2
15.6 ± 0.3
φ
3.2 ± 0.2
1.5
1.6
2.0
1.4 Max
2.8
1.0 ± 0.2
0.6 ± 0.2
0.9
1.0
3.6
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Orderable Part Number
Quantity
Shipping Container
Box (Tube)
RJL5020DPK-00-T0
360 pcs
R07DS0239EJ0500 Rev.5.00
Jan 07, 2011
Page 6 of 6
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