RJL6013DPP [RENESAS]
Silicon N Channel MOSFET High Speed Power Switching; 硅N沟道MOSFET高速电源开关
| 型号： | RJL6013DPP |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOSFET High Speed Power Switching |
| 文件： | 总7页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RJL6013DPP
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1691-0200
Rev.2.00
Jun 13, 2008
Features
•
•
•
•
Built-in fast recovery diode
Low on-resistance
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
D
1. Gate
2. Drain
3. Source
G
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
VDSS
Ratings
Unit
600
V
V
Gate to source voltage
VGSS
±30
Note4
Drain current
ID
11
A
Note1
Drain peak current
ID (pulse)
IDR
33
A
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
11
A
Note1
IDR (pulse)
33
A
Note3
IAP
4
0.87
A
Note3
Avalanche energy
EAR
mJ
W
°C/W
°C
°C
Channel dissipation
Pch Note2
θch-c
Tch
30
Channel to case thermal impedance
Channel temperature
4.17
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
4. Limited by maximum safe operation area
REJ03G1691-0200 Rev.2.00 Jun 13, 2008
Page 1 of 6
RJL6013DPP
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
IDSS
Min
600
—
Typ
—
Max
—
Unit
V
Test conditions
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
ID = 10 mA, VGS = 0
—
10
µA
µA
V
VDS = 600 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 5.5 A, VGS = 10 V Note5
IGSS
—
—
±0.1
4.0
VGS(off)
RDS(on)
2.0
—
—
Static drain to source on state
resistance
0.66
0.81
Ω
Input capacitance
Ciss
Coss
Crss
td(on)
tr
—
—
—
—
—
—
—
—
—
—
—
—
1400
135
17
—
—
—
—
—
—
—
—
—
—
1.7
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS = 25 V
VGS = 0
Output capacitance
Reverse transfer capacitance
Turn-on delay time
f = 1 MHz
30
ID = 5.5 A
VGS = 10 V
Rise time
20
RL = 54.5 Ω
Rg = 10 Ω
Turn-off delay time
td(off)
tf
89
Fall time
16
Total gate charge
Qg
38
VDD = 480 V
VGS = 10 V
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Qgs
Qgd
VDF
trr
6.6
17.2
1.0
180
ID = 11 A
IF = 11 A, VGS = 0 Note5
ns
IF = 11 A, VGS = 0
diF/dt = 100 A/µs
Notes: 5. Pulse test
REJ03G1691-0200 Rev.2.00 Jun 13, 2008
Page 2 of 6
RJL6013DPP
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
20
16
12
8
100
10
10
Pulse Test
5.6 V
µ
s
6 V
7 V
5.4 V
5.2 V
10 V
1
Operation in this
area is limited by
RDS(on)
5.0 V
0.1
4.8 V
4.6 V
4
0.01
0.001
Ta = 25°C
1 shot
VGS = 4.4 V
0
0.1
1
10
100
1000
4
8
12
16
20
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Typical Transfer Characteristics
10
100
10
Pulse Test
VGS = 10 V
VDS = 10 V
Pulse Test
Tc = 75°C
1
25°C
1
−25°C
0.1
0.1
0
2
4
6
8
10
1
10
100
Drain Current ID (A)
Gate to Source Voltage VGS (V)
Body-Drain Diode Reverse
Recovery Time
Static Drain to Source on State Resistance
vs. Temperature
1000
100
10
2.0
Pulse Test
VGS = 10 V
1.5
ID = 11 A
5.5 A
1.0
0.5
0
3 A
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
1
10
100
-25
0
25 50 75 100 125 150
Reverse Drain Current IDR (A)
Case Temperature Tc (°C)
REJ03G1691-0200 Rev.2.00 Jun 13, 2008
Page 3 of 6
RJL6013DPP
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics
ID = 11 A
10000
1000
100
800
16
VGS
Ciss
VDD = 100 V
300 V
480 V
600
400
12
8
VDS
Coss
Crss
10
200
4
0
VDD = 480 V
300 V
100 V
VGS = 0
f = 1 MHz
1
8
16
24
32
40
0
50
100 150 200 250 300
0
Drain to Source Voltage VDS (V)
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
5
4
3
2
20
VDS = 10 V
Pulse Test
16
12
I
D = 10 mA
1 mA
10 V
VGS = 0, -5 V
5 V
8
4
0.1 mA
1
0
0
-25
0
25 50 75 100 125 150
0.4
0.8
1.2
1.6
2.0
Case Temperature Tc (°C)
Source to Drain Voltage VSD (V)
REJ03G1691-0200 Rev.2.00 Jun 13, 2008
Page 4 of 6
RJL6013DPP
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
Tc = 25°C
D = 1
0.5
0.2
0.1
0.1
0.05
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 4.17°C/W, Tc = 25°C
PW
T
0.01
PDM
D =
PW
T
0.001
10 µ
100 µ
1 m
10 m
100 m
1
10
100
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
Waveform
Vout
Monitor
90%
D.U.T.
RL
10%
10%
Vin
10 Ω
Vout
10%
VDD
= 300 V
Vin
10 V
90%
90%
t
t
r
t
d(off)
t
f
d(on)
REJ03G1691-0200 Rev.2.00 Jun 13, 2008
Page 5 of 6
RJL6013DPP
Package Dimensions
Package Name
TO-220FN
JEITA Package Code
RENESAS Code
PRSS0003AB-A
Previous Code
MASS[Typ.]
2.0g
Unit: mm
2.8 0.2
10 0.3
φ3.2 0.2
1.1 0.2
1.1 0.2
0.75 0.15
0.75 0.15
2.54 0.25
2.54 0.25
Ordering Information
Part No.
Quantity
Shipping Container
RJL6013DPP-00-T2
1050 pcs
Box (Tube)
REJ03G1691-0200 Rev.2.00 Jun 13, 2008
Page 6 of 6
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