RJL5032DPP-M0 [RENESAS]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | RJL5032DPP-M0 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总7页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
RJL5032DPP-M0
Silicon N Channel MOS FET
High Speed Power Switching
R07DS0251EJ0100
Rev.1.00
May 23, 2011
Features
•
Low on-state resistance
DS(on) = 2.2 Ω typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25°C)
R
•
•
High speed switching
Built in fast recovery diode
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
D
1. Gate
2. Drain
3. Source
G
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Symbol
Value
Unit
V
VDSS
VGSS
ID
500
±30
V
Drain current
3
A
Note1
Drain peak current
ID (pulse)
12
3
A
Note3
Avalanche current
IAP
A
Channel dissipation
Pch Note 2
θch-c
Tch
30.6
W
Channel to case thermal Impedance
Channel temperature
4.08
°C/W
°C
°C
150
Storage temperature
Tstg
–55 to +150
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
R07DS0251EJ0100 Rev.1.00
May 23, 2011
Page 1 of 6
RJL5032DPP-M0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Input capacitance
Symbol
V(BR)DSS
IDSS
Min
500
—
—
2
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
VDS = 500 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 1.5 A, VGS = 10 V Note 4
VDS = 25 V
—
10
±0.1
4
μA
μA
V
IGSS
—
VGS (off)
RDS (on)
Ciss
Coss
Crss
td (on)
tr
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.2
265
35
2.8
—
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VGS = 0
Output capacitance
—
f = 1 MHz
Reverse transfer capacitance
Turn-on delay time
4.5
6
—
—
VDD = 250 V
ID = 1.5 A
Rise time
2.5
20
—
VGS = 10 V
Rg = 10 Ω
Turn-off delay time
td (off)
tf
—
Fall time
25
—
Total gage charge
Qg
10.3
1.5
5.2
0.9
100
—
VDD = 400 V
GS = 10 V
ID = 3 A
IF = 3 A, VGS = 0 Note 4
IF = 3 A, VGS = 0
V
Gate to source charge
Qgs
Qgd
VDF
—
Gate to drain charge
—
Body-drain diode forward voltage
Body-drain diode reverse recovery time
1.5
—
trr
ns
VDD = 250 V
diF/dt = 100 A/μs
Note: 4. Pulse test
R07DS0251EJ0100 Rev.1.00
May 23, 2011
Page 2 of 6
RJL5032DPP-M0
Preliminary
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
5
4
3
2
1
0
100
10
5 V
Ta = 25°C
6 V
4.8 V
4.6 V
Pulse Test
10 V
20 V
1
4.4 V
4.2 V
Operation in this
area is limited by
RDS(on)
0.1
0.01
0.001
VGS = 4 V
Tc = 25°C
1 shot
1
10
100
1000
0
4
8
12
16
20
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Typical Transfer Characteristics
VDS = 10 V
Tc = −25°C
6
5
4
3
2
1
0
10
Pulse Test
25°C
75°C
1
VGS = 10 V
Ta = 25°C
Pulse Test
0.1
0.1
0
2
4
6
8
10
1
10
Drain Current ID (A)
Gate to Source Voltage VGS (V)
Body-Drain Diode Reverse
Recovery Time (Typical)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
8
1000
VGS = 10 V
Pulse Test
6
ID = 3 A
4
100
1.5 A
1 A
2
di / dt = 100 A / μs
V
GS = 0, Ta = 25°C
0
−25
10
0.1
0
25
50 75 100 125 150
1
10
100
Reverse Drain Current IDR (A)
Case Temperature Tc (°C)
R07DS0251EJ0100 Rev.1.00
May 23, 2011
Page 3 of 6
RJL5032DPP-M0
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics (Typical)
1000
800
16
VGS
V
GS = 0
Tc = 25°C
ID = 3 A
Ta = 25°C
f = 1 MHz
Ciss
600
400
12
8
100
10
1
VDD = 100 V
300 V
400 V
VDS
Coss
Crss
200
0
4
0
VDD = 400 V
300 V
100 V
0
50
100
150
200
250
0
4
8
12
16
20
Drain to Source Voltage VDS (V)
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
10
8
5
4
3
2
V
GS = 0
Ta = 25°C
Pulse Test
ID = 10 mA
6
4
1 mA
0.1 mA
1
0
2
VDS = 10 V
0
0
0.4
0.8
1.2
1.6
2.0
-25
0
25 50 75 100 125 150
Case Temperature Tc (°C)
Source to Drain Voltage VSD (V)
R07DS0251EJ0100 Rev.1.00
May 23, 2011
Page 4 of 6
RJL5032DPP-M0
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
TC = 25°C
D = 1
0.5
0.2
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 4.08°C/W, Tc = 25°C
PW
T
PDM
D =
1shot pulse
PW
T
0.01
0.03
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
Waveform
Vout
Monitor
90%
D.U.T.
RL
10%
10%
Vin
10 Ω
Vout
10%
VDD
= 250 V
Vin
10 V
90%
90%
t
t
t
t
f
d(on)
r
d(off)
R07DS0251EJ0100 Rev.1.00
May 23, 2011
Page 5 of 6
RJL5032DPP-M0
Preliminary
Package Dimensions
Package Name
TO-220FL
JEITA Package Code
RENESAS Code
PRSS0003AF-A
Previous Code
TO-220FL
MASS[Typ.]
1.5g
Unit: mm
⎯
10.0 0.3
2.8 0.2
3.2 0.2
1.15 0.2
1.15 0.2
0.75 0.15
2.54 0.25
0.40 0.15
2.54 0.25
Ordering Information
Orderable Part Number
RJL5032DPP-M0-T2
Quantity
Shipping Container
Box (Tube)
600 pcs
R07DS0251EJ0100 Rev.1.00
May 23, 2011
Page 6 of 6
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