UPA2737GR-E2-AX [RENESAS]
Pch Single Power MOSFET -30V -11A 13mohm Power SOP8;
| 型号： | UPA2737GR-E2-AX |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Pch Single Power MOSFET -30V -11A 13mohm Power SOP8 |
| 文件： | 总7页 (文件大小：381K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
μPA2737GR
P-channel MOSFET
–30 V, –11 A, 13 mΩ
R07DS1317EJ0100
Rev.1.00
Jan 12, 2016
Description
The μ PA2737GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
•
•
VDSS = −30 V (TA = 25°C)
Low on-state resistance
⎯ RDS(on) = 13 mΩ MAX. (VGS = −10 V, ID = −11 A)
4.5 V Gate-drive available
Small and surface mount package (SOP-8)
Pb-free and Halogen free
•
•
•
SOP-8
Ordering Information
Part No.
μ PA2737GR-E1-AX
μ PA2737GR-E2-AX
LEAD PLATING
PACKING
Package
SOP-8
Ni / Pd / Au
Tape 2500 p/reel
0.085 g TYP.
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Ratings
−30
Unit
V
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
m20
V
m11
A
1
Drain Current (pulse) ∗
m110
1.1
A
2
Total Power Dissipation ∗
Total Power Dissipation (PW = 10 sec) ∗
W
W
°C
°C
A
2
PT2
2.5
Channel Temperature
Tch
150
Storage Temperature
Single Avalanche Current ∗
Single Avalanche Energy ∗
Tstg
−55 to +150
11
3
IAS
3
EAS
12.1
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
114
°C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH
R07DS1317EJ0100 Rev.1.00
Jan 12, 2016
Page 1 of 6
μPA2737GR
Electrical Characteristics (TA = 25°C)
Item
Symbol
MIN.
TYP.
MAX.
−1
Unit
μA
nA
V
Test Conditions
VDS = −30 V, VGS = 0 V
VGS = m20 V, VDS = 0 V
VDS = −10 V, ID = −1 mA
VDS = −10 V, ID = −5.5 A
VGS = −10 V, ID = −11 A
VGS = −4.5 V, ID = −11 A
VDS = −10 V,
Zero Gate Voltage Drain Current IDSS
Gate Leakage Current
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
m100
−2.5
Gate Cut-off Voltage
Forward Transfer Admittance ∗
−1.0
1
4.5
S
Drain to Source On-state
9.7
17
13
25
mΩ
mΩ
pF
pF
pF
ns
1
Resistance ∗
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
1750
850
770
20
Coss
Crss
td(on)
tr
VGS = 0 V,
f = 1 MHz
VDD = −15 V, ID = −5.5 A,
VGS = −10 V,
32
ns
Turn-off Delay Time
Fall Time
td(off)
tf
70
ns
RG = 10 Ω
55
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage ∗
Reverse Recovery Time
Reverse Recovery Charge
Note: ∗1. Pulsed
QG
45
nC
nC
nC
V
VDD = −24 V,
QGS
QGD
VF(S-D)
trr
2.5
23
VGS = −10 V,
ID = −11 A
1
0.85
49
IF = 11 A, VGS = 0 V
IF = 11 A, VGS = 0 V,
di/dt = 100 A/μs
ns
Qrr
48
nC
TEST CIRCUIT 2 SWITCHING TIME
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
D.U.T.
L
RG
= 25 Ω
50 Ω
V
GS(−)
RL
90%
V
GS
V
GS
10%
V
DD
PG.
Wave Form
0
RG
V
GS = −20 → 0 V
PG.
V
DD
VDS(−)
90%
90%
−
BVDSS
I
AS
V
DS
V
0
GS(−)
V
DS
10% 10%
V
DS
0
Wave Form
I
D
t
d(on)
t
r
t
d(off)
t
f
V
DD
τ
t
on
t
off
τ = 1
μ
s
Starting Tch
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= −2 mA
RL
PG.
VDD
50 Ω
R07DS1317EJ0100 Rev.1.00
Jan 12, 2016
Page 2 of 6
μPA2737GR
TYPICAL CHARACTERISTICS (TA = 25°C)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
140
120
100
80
-1000
30 ms
100 ms
ID(pulse) = –110 A
ID(DC) = –11 A
-100
-10
μ
60
-1
40
Single Pulse
TA = 25°C
-0.1
Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
20
-0.01
0
-0.01
-0.1
-1
-10
-100
0
25
50
75 100 125 150 175
VDS - Drain to Source Voltage – V
TA - Ambient Temperature - °C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Rth(ch-A) = 114°C/W
1
R
th(ch-A)：Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
Single pulse
0.1
0.01
100 μ
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
-120
-100
-80
-60
-40
-20
-0
-100
-10
-1
TA = 150°C
75°C
VGS = –10 V
25°C
–55°C
–4.5 V
-0.1
-0.01
Pulsed
VDS = –10 V
Puls ed
-0.001
-0
-1
-2
-3
-4
-0
-0.5
-1
-1.5
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
R07DS1317EJ0100 Rev.1.00
Jan 12, 2016
Page 3 of 6
μPA2737GR
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
-3
-2
-1
-0
100
TA = 150°C
75°C
25°C
–55°C
10
1
Pulsed
VDS = –10 V
ID = –1mA
Pulsed
VDS = –10 V
0.1
-50
0
50
100
150
-0.01
-0.1
-1
-10
ID - Drain Current - A
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
30
Pulsed
Pulsed
ID = –11 A
25
20
15
10
5
30
20
10
0
VGS = –4.5 V
–10 V
0
-1
-10
-100
-1000
-0
-5
-10
-15
-20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
25
10000
1000
100
Pulsed
ID = –11 A
VGS = –4.5 V
20
15
10
5
Ciss
Coss
VGS = –10 V
Crss
VGS = 0 V
f = 1 MHz
0
-50
0
50
100
150
-0.1
-1
-10
-100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
R07DS1317EJ0100 Rev.1.00
Jan 12, 2016
Page 4 of 6
μPA2737GR
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
-25
-20
-15
-10
-5
-10
-8
VDD = –24V
–12V
VGS
–6V
VGS = –10 V
100
10
1
VDS
-6
-4
–4.5 V
0 V
-2
Pulsed
1 1.2 1.4
ID = –11 A
40
-0
-0
0
10
20
30
50
0
0.2 0.4 0.6 0.8
QG - Gate Charge - nC
VF(S-D) - Source to Drain Voltage - V
R07DS1317EJ0100 Rev.1.00
Jan 12, 2016
Page 5 of 6
μPA2737GR
Package Drawings (Unit: mm)
SOP-8
Equivalent Circuit
Drain
Body
Diode
Gate
1, 2, 3
4
Source
Gate
5, 6, 7, 8 Darin
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS1317EJ0100 Rev.1.00
Jan 12, 2016
Page 6 of 6
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