UPA863TS-T3 [RENESAS]
RF SMALL SIGNAL TRANSISTOR;型号: | UPA863TS-T3 |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | RF SMALL SIGNAL TRANSISTOR |
文件: | 总12页 (文件大小:215K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1.
2.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights
of Renesas Electronics or others.
3.
4.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by
you or third parties arising from the use of these circuits, software, or information.
5.
When exporting the products or technology described in this document, you should comply with the applicable export control
laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas
Electronics products or the technology described in this document for any purpose relating to military applications or use by
the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and
technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited
under any applicable domestic or foreign laws or regulations.
6.
7.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics
does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and
“Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as
indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular
application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior
written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way
liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an
application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written
consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise
expressly specified in a Renesas Electronics data sheets or data books, etc.
“Standard”:
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-
crime systems; safety equipment; and medical equipment not specifically designed for life support.
“Specific”:
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or
systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare
intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8.
9.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,
Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system
manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable
laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS
Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with
applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas
Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this
document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µPA863TS
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN SUPER LEAD-LESS MINIMOLD
FEATURES
•
•
Low voltage operation
2 different built-in transistors (2SC5436, 2SC5800)
Q1: Built-in high gain transistor
fT = 12.0 GHz TYP., S21e 2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz
Q2: Built-in low phase distortion transistor suited for OSC applications
fT = 4.5 GHz TYP., S21e 2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
6-pin super lead-less minimold package
•
BUILT-IN TRANSISTORS
Q1
Q2
Flat-lead 3-pin thin-type ultra super minimold part No.
2SC5436
2SC5800
ORDERING INFORMATION
Part Number
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
µPA863TS
µPA863TS-T3
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10333EJ02V0DS (2nd edition)
Date Published September 2003 CP(K)
The mark shows major revised points.
Printed in Japan
NEC Compound Semiconductor Devices 2002, 2003
µPA863TS
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Q1
5
Q2
9
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
V
V
3
5.5
1.5
100
110
2
V
30
90
mA
mW
Note
Total Power Dissipation
Ptot
130 in 2 elements
150
Junction Temperature
Storage Temperature
Tj
°C
°C
Tstg
−65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
2
Data Sheet PU10333EJ02V0DS
µPA863TS
ELECTRICAL CHARACTERISTICS (TA = +25°C)
(1) Q1
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Symbol
ICBO
Test Conditions
VCB = 5 V, IE = 0 mA
MIN.
−
TYP.
−
MAX.
Unit
nA
nA
−
100
100
140
−
IEBO
VEB = 1 V, IC = 0 mA
−
−
Note 1
hFE
VCE = 1 V, IC = 10 mA
70
10.0
7.0
−
110
12.0
9.0
1.5
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
fT
VCE = 1 V, IC = 10 mA, f = 2 GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz
GHz
dB
dB
2
S21e
−
VCE = 1 V, IC = 3 mA, f = 2 GHz,
ZS = Zopt
NF
2.0
Note 2
Reverse Transfer Capacitance
Cre
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
−
0.4
0.7
pF
(2) Q2
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Symbol
ICBO
Test Conditions
VCB = 5 V, IE = 0 mA
MIN.
−
TYP.
−
MAX.
600
600
145
−
Unit
nA
IEBO
VEB = 1 V, IC = 0 mA
−
−
nA
Note 1
hFE
VCE = 1 V, IC = 5 mA
100
3.0
5.0
3.0
4.5
−
120
4.5
6.5
4.0
5.5
1.9
−
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
fT
fT
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 1 V, IC = 15 mA, f = 2 GHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 1 V, IC = 15 mA, f = 2 GHz
GHz
GHz
dB
−
2
S21e
−
2
S21e
−
dB
VCE = 1 V, IC = 10 mA, f = 2 GHz,
ZS = Zopt
NF
2.5
dB
Note 2
Reverse Transfer Capacitance
Cre
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
−
0.6
0.8
pF
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
FB
xC
Marking
hFE Value of Q1
hFE Value of Q2
70 to 140
100 to 145
3
Data Sheet PU10333EJ02V0DS
µPA863TS
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
200
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
150
2 Elements in total
130
Q2
110
100
90
Q1
50
0
25
50
75
100
125
(˚C)
150
Ambient Temperature T
A
Q1
Q2
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.6
1.0
f = 1 MHz
f = 1 MHz
0.5
0.4
0.3
0.2
0.1
0.8
0.6
0.4
0.2
0
1
2
3
4
5
0
2
4
6
8
10
Collector to Base Voltage VCB (V)
Collector to Base Voltage VCB (V)
Remark The graphs indicate nominal characteristics.
4
Data Sheet PU10333EJ02V0DS
µPA863TS
Q1
Q2
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
100
10
1
VCE = 1 V
VCE = 1 V
0.1
0.1
0.01
0.001
0.01
0.001
0.0001
0.0001
0.5
0.6
0.7
0.8
0.9
1.0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
100
10
1
VCE = 2 V
VCE = 2 V
0.1
0.1
0.01
0.001
0.01
0.001
0.0001
0.0001
0.5
0.6
0.7
0.8
0.9
1.0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
Remark The graphs indicate nominal characteristics.
5
Data Sheet PU10333EJ02V0DS
µPA863TS
Q1
Q2
COLLECTOR CURRENT vs.
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR TO EMITTER VOLTAGE
60
50
40
30
20
10
35
30
25
20
15
10
5
500 A
µ
450
µ
A
µ
400 A
350 A
µ
400
µ
A
300
250
200
150
µ
µ
µ
µ
A
A
A
A
360
µ
A
320
280
240
µ
A
µ
A
µ
A
200 A
µ
160 A
µ
100
µ
A
120
80
µ
µ
A
A
IB = 50 A
µ
µ
I
B
= 40
6
A
0
1
2
3
4
0
1
2
3
4
5
7
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
6
Data Sheet PU10333EJ02V0DS
µPA863TS
Q1
Q2
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
100
10
1 000
100
10
V
CE = 1 V
V
CE = 1 V
0.1
1
10
(mA)
100
0.1
1
10
(mA)
100
Collector Current I
C
Collector Current I
C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
100
10
1 000
100
10
V
CE = 2 V
V
CE = 2 V
0.1
1
10
(mA)
100
0.1
1
10
(mA)
100
Collector Current I
C
Collector Current I
C
Remark The graphs indicate nominal characteristics.
7
Data Sheet PU10333EJ02V0DS
µPA863TS
PACKAGE DIMENSIONS
6-PIN SUPER LEAD-LESS MINIMOLD (UNIT: mm)
0.9±0.05
0.7±0.05
(Top View)
Q1
C1
E1
C2
B1
E2
B2
1
6
5
4
2
3
Q2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
8
Data Sheet PU10333EJ02V0DS
µPA863TS
•
The information in this document is current as of September, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4-0110
9
Data Sheet PU10333EJ02V0DS
µPA863TS
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
E-mail: salesinfo@csd-nec.com (sales and general)
techinfo@csd-nec.com (technical)
http://www.ncsd.necel.com/
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
TEL: +852-3107-7303
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
TEL: +82-2-558-2120
FAX: +82-2-558-5209
FAX: +852-3107-7309
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
NEC Electronics (Europe) GmbH
http://www.ee.nec.de/
TEL: +49-211-6503-01 FAX: +49-211-6503-487
California Eastern Laboratories, Inc.
TEL: +1-408-988-3500 FAX: +1-408-988-0279
http://www.cel.com/
0307
相关型号:
UPA863TS-T3FB-A
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEADLESS MINIMOLD PACKAGE-6Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
NEC
UPA867TS-A
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, S Band, Silicon Germanium, NPN, LEAD FREE, 1007, SUPER LEADLESS MINIMOLD PACKAGE-6Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
NEC
UPA867TS-FB-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon Germanium, NPN, LEAD FREE, SUPER LEADLESS MINIMOLD, 1007, 6 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
NEC
UPA867TS-T3-A
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, S Band, Silicon Germanium, NPN, LEAD FREE, 1007, SUPER LEADLESS MINIMOLD PACKAGE-6Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
NEC
UPA867TS-T3-A-FB
RF SMALL SIGNAL TRANSISTORWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
RENESAS
UPA867TS-T3FB-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon Germanium, NPN, LEAD FREE, SUPER LEADLESS MINIMOLD, 1007, 6 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
NEC
UPA868TS-A
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, S Band, Silicon Germanium, NPN, LEAD FREE, 1007, SUPER LEADLESS MINIMOLD PACKAGE-6Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
NEC
UPA868TS-T3-A
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, S Band, Silicon Germanium, NPN, LEAD FREE, 1007, SUPER LEADLESS MINIMOLD PACKAGE-6Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
NEC
UPA868TS-T3-A
2 CHANNEL, S BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, 1007, SUPER LEADLESS MINIMOLD PACKAGE-6Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
RENESAS
UPA869TD
2 CHANNEL, L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS MINIMOLD, M16, 1208, 6 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
RENESAS
UPA869TD
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon Germanium, NPN, LEADLESS MINIMOLD, M16, 1208, 6 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
NEC
UPA869TD-FB
TRANSISTOR RF SMALL SIGNAL TRANSISTOR, BIP RF Small SignalWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
RENESAS
©2020 ICPDF网 联系我们和版权申明