FDD6680S [ROCHESTER]
55A, 30V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3;
| 型号： | FDD6680S |
| 厂家： | 
Rochester Electronics |
| 描述： | 55A, 30V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：780K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
December 2000
FDD6680S
30V N-Channel PowerTrench SyncFET™
General Description
Features
The FDD6680S is designed to replace
a single
• 55 A, 30 V
RDS(ON) = 11 mΩ @ VGS = 10 V
DS(ON) = 17 mΩ @ VGS = 4.5 V
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDD6680S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDD6680S as the low-side switch in a synchronous
rectifier is indistinguishable from the performance of the
FDD6680A in parallel with a Schottky diode.
R
• Includes SyncFET Schottky body diode
• Low gate charge (17nC typical)
• High performance trench technology for extremely
low RDS(ON)
Applications
• DC/DC converter
• Motor Drives
• High power and current handling capability
.
D
D
G
G
S
TO-252
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
30
V
V
A
VGSS
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
±20
ID
(Note 3)
(Note 1a)
(Note 1)
55
100
PD
W
Power Dissipation
60
(Note 1a)
(Note 1b)
3.1
1.3
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1a)
(Note 1b)
2.1
40
96
RθJC
RθJA
RθJA
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD6680S
FDD6680S
13’’
16mm
2500 units
FDD6680S Rev D(W)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
IAR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, VDD = 15 V, ID=14A
245
14
mJ
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 1 mA
30
V
19
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 1 mA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = 24 V,
VGS = 20 V,
VGS = 0 V
VDS = 0 V
500
100
µA
nA
nA
IGSSF
IGSSR
VGS = –20 V, VDS = 0 V
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1 mA
1
2
3
V
Gate Threshold Voltage
Temperature Coefficient
–3.3
∆VGS(th)
∆TJ
ID = 1 mA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 4.5 V,
VGS= 10 V, ID = 12.5A, TJ= 125°C
ID = 12.5 A
ID = 10 A
9.5
13.5
17
11
17
23
mΩ
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 15 V,
VDS = 5 V
50
A
S
Forward Transconductance
ID = 12.5 A
27
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
2010
526
pF
pF
pF
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
186
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
10
10
34
14
17
6.2
5.5
18
18
55
23
24
ns
ns
VDS = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
ns
ns
Qg
Qgs
Qgd
nC
nC
nC
V
DS = 15 V,
ID = 12.5 A,
VGS = 5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
4.4
0.7
A
V
VSD
V
GS = 0 V, IS = 4.4 A
(Note 2)
(Note 2)
0.49
0.56
20
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 7 A
IF = 12.5A,
trr
nS
nC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
diF/dt = 300 A/µs
(Note 3)
Qrr
19.7
FDD6680S Rev D (W)
Electrical Characteristics
TA = 25°C unless otherwise noted
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
R
θJA = 40°C/W when mounted on a
b)
R
θJA = 96°C/W when mounted
1in2 pad of 2 oz copper
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
PD
3. Maximum current is calculated as:
RDS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6680S Rev D (W)
Typical Characteristics
2
1.8
1.6
1.4
1.2
1
60
VGS = 10V
5.0V
4.5V
50
40
30
20
10
0
4.0V
VGS = 4.0V
4.5V
7.0V
5.0V
3.5V
6.0V
7.0V
8.0V
10V
3.0V
0.8
0
10
20
30
40
50
0
1
2
3
150
5
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.04
0.03
0.02
0.01
0
2.6
ID = 6.3A
ID = 12.5A
VGS = 10V
2.2
1.8
1.4
1
TA = 100oC
TA = 25oC
0.6
0.2
-50
-25
0
25
50
75
100
125
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
50
100oC
TA = -55oC
25oC
VGS = 0V
VDS = 5V
40
30
20
10
0
1
TA = 100oC
0.1
0.01
25oC
-55oC
0.001
0
0.2
0.4
0.6
0.8
1
2
3
4
V
SD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD6680S Rev D (W)
Typical Characteristics (continued)
10
3000
2500
2000
1500
1000
500
f = 1MHz
VGS = 0 V
ID =12.5A
VDS = 5V
10V
8
6
4
2
0
15V
CISS
COSS
CRSS
0
0
10
20
Qg, GATE CHARGE (nC)
30
40
0
10
20
30
V
DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
60
50
40
30
20
10
0
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
RDS(ON) LIMIT
100
100µs
1ms
10ms
100ms
1s
10s
1
VGS = 10V
SINGLE PULSE
RθJA = 96oC/W
DC
T
A = 25oC
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
0.2
RθJA = 96 °C/W
0.1
0.1
0.05
0.02
P(pk)
t1
0.01
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6680S Rev D (W)
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDD6680S.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.1
100oC
0.01
0.001
25oC
0
0.0001
0
10
20
30
VDS, REVERSE VOLTAGE (V)
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
10nS/div
Figure 12. FDD6680S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDD6680).
0
10nS/div
Figure 13. Non-SyncFET (FDS6680) body
diode reverse recovery characteristic.
FDS6680S Rev C (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PowerTrench
QFET™
QS™
SyncFET™
TinyLogic™
UHC™
ACEx™
FASTr™
GlobalOptoisolator™
GTO™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
QT Optoelectronics™
VCX™
HiSeC™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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