FQI2N90TU [ROCHESTER]
2.2A, 900V, 7.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3;
| 型号： | FQI2N90TU |
| 厂家： | 
Rochester Electronics |
| 描述： | 2.2A, 900V, 7.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 |
| 文件： | 总14页 (文件大小：1497K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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ꢑꢁꢔꢋꢁꢚꢄ0ꢈ1ꢄꢈꢒꢂꢄꢔꢉꢍꢂꢉꢏꢂꢏꢄꢓꢎꢒꢄꢃꢕꢒꢖꢔꢋꢈꢊꢄꢔꢌꢐꢊꢈꢉꢍꢄꢔꢉꢍꢎꢄꢍꢁꢂꢄ"ꢎꢏꢙꢚ
ꢎꢒꢄ0"1ꢄꢃꢕꢐꢐꢎꢒꢍꢄꢎꢒꢄꢃꢕꢃꢍꢈꢔꢉꢄꢊꢔꢓꢂꢚꢄꢎꢒꢄ0ꢋ1ꢄꢑꢁꢎꢃꢂꢄꢓꢈꢔꢊꢕꢒꢂꢄꢍꢎꢄꢐꢂꢒꢓꢎꢒꢌ
ꢑꢁꢂꢉꢄꢐꢒꢎꢐꢂꢒꢊꢙꢄꢕꢃꢂꢏꢄꢔꢉꢄꢈꢋꢋꢎꢒꢏꢈꢉꢋꢂꢄꢑꢔꢍꢁꢄꢔꢉꢃꢍꢒꢕꢋꢍꢔꢎꢉꢃꢄꢓꢎꢒꢄꢕꢃꢂ
ꢐꢒꢎ!ꢔꢏꢂꢏꢄꢔꢉꢄ ꢍꢁꢂꢄ ꢊꢈ"ꢂꢊꢔꢉꢖꢚꢄꢋꢈꢉꢄ "ꢂꢄꢒꢂꢈꢃꢎꢉꢈ"ꢊꢙꢄ ꢂCꢐꢂꢋꢍꢂꢏꢄꢍꢎ
% ꢄ&ꢄꢋꢒꢔꢍꢔꢋꢈꢊꢄꢋꢎꢌꢐꢎꢉꢂꢉꢍꢄꢔꢃꢄꢈꢉꢙꢄꢋꢎꢌꢐꢎꢉꢂꢉꢍꢄꢎꢓꢄꢈꢄꢊꢔꢓꢂꢄꢃꢕꢐꢐꢎꢒꢍ
ꢏꢂ!ꢔꢋꢂꢄ ꢎꢒꢄ ꢃꢙꢃꢍꢂꢌꢄ ꢑꢁꢎꢃꢂꢄ ꢓꢈꢔꢊꢕꢒꢂꢄ ꢍꢎꢄ ꢐꢂꢒꢓꢎꢒꢌꢄ ꢋꢈꢉꢄ "ꢂ
ꢒꢂꢈꢃꢎꢉꢈ"ꢊꢙꢄꢂCꢐꢂꢋꢍꢂꢏꢄꢍꢎꢄꢋꢈꢕꢃꢂꢄꢍꢁꢂꢄꢓꢈꢔꢊꢕꢒꢂꢄꢎꢓꢄꢍꢁꢂꢄꢊꢔꢓꢂꢄꢃꢕꢐꢐꢎꢒꢍ
ꢏꢂ!ꢔꢋꢂꢄꢎꢒꢄꢃꢙꢃꢍꢂꢌꢚꢄꢎꢒꢄꢍꢎꢄꢈꢓꢓꢂꢋꢍꢄꢔꢍꢃꢄꢃꢈꢓꢂꢍꢙꢄꢎꢒꢄꢂꢓꢓꢂꢋꢍꢔ!ꢂꢉꢂꢃꢃ
ꢃꢐꢗꢁꢎꢔꢏꢀꢓꢏꢄꢏꢎꢓꢀꢁꢑꢖꢆꢙꢆꢏꢆꢗꢙꢓ
ꢁꢌꢚꢊꢛꢊꢜꢊꢝꢛꢀꢝꢚꢀꢏꢌꢉꢞ
ꢝꢉꢌꢉꢚ"ꢋꢋꢌꢔꢖ!ꢋꢘꢌꢙ#ꢙ$ꢉꢌꢙꢆꢘ
ꢈꢊꢆ!%$ꢌꢔꢂꢌꢉꢌ%ꢚ
ꢝꢋ#ꢙꢘꢙꢌꢙꢆꢘ
&ꢏ!ꢈꢉꢋꢂꢄ4ꢉꢓꢎꢒꢌꢈꢍꢔꢎꢉ
ꢗꢎꢒꢌꢈꢍꢔ!ꢂꢄꢎꢒꢄ4ꢉꢄ
ꢛꢂꢃꢔꢖꢉ
ꢀꢁꢔꢃꢄꢏꢈꢍꢈꢃꢁꢂꢂꢍꢄꢋꢎꢉꢍꢈꢔꢉꢃꢄꢍꢁꢂꢄꢏꢂꢃꢔꢖꢉꢄꢃꢐꢂꢋꢔꢓꢔꢋꢈꢍꢔꢎꢉꢃꢄꢓꢎꢒ
ꢐꢒꢎꢏꢕꢋꢍꢄꢏꢂ!ꢂꢊꢎꢐꢌꢂꢉꢍ ꢄꢞꢐꢂꢋꢔꢓꢔꢋꢈꢍꢔꢎꢉꢃꢄꢌꢈꢙꢄꢋꢁꢈꢉꢖꢂꢄꢔꢉ
ꢈꢉꢙꢄꢌꢈꢉꢉꢂꢒꢄꢑꢔꢍꢁꢎꢕꢍꢄꢉꢎꢍꢔꢋꢂ
8ꢒꢂꢊꢔꢌꢔꢉꢈꢒꢙ
ꢗꢔꢒꢃꢍꢄ8ꢒꢎꢏꢕꢋꢍꢔꢎꢉ
ꢀꢁꢔꢃꢄꢏꢈꢍꢈꢃꢁꢂꢂꢍꢄꢋꢎꢉꢍꢈꢔꢉꢃꢄꢐꢒꢂꢊꢔꢌꢔꢉꢈꢒꢙꢄꢏꢈꢍꢈꢚꢄꢈꢉꢏ
ꢃꢕꢐꢐꢊꢂꢌꢂꢉꢍꢈꢒꢙꢄꢏꢈꢍꢈꢄꢑꢔꢊꢊꢄ"ꢂꢄꢐꢕ"ꢊꢔꢃꢁꢂꢏꢄꢈꢍꢄꢈꢄꢊꢈꢍꢂꢒꢄꢏꢈꢍꢂ
ꢗꢈꢔꢒꢋꢁꢔꢊꢏꢄꢞꢂꢌꢔꢋꢎꢉꢏꢕꢋꢍꢎꢒꢄꢒꢂꢃꢂꢒ!ꢂꢃꢄꢍꢁꢂꢄꢒꢔꢖꢁꢍꢄꢍꢎꢄꢌꢈ=ꢂ
ꢋꢁꢈꢉꢖꢂꢃꢄꢈꢍꢄꢈꢉꢙꢄꢍꢔꢌꢂꢄꢑꢔꢍꢁꢎꢕꢍꢄꢉꢎꢍꢔꢋꢂꢄꢔꢉꢄꢎꢒꢏꢂꢒꢄꢍꢎꢄꢔꢌꢐꢒꢎ!ꢂ
ꢏꢂꢃꢔꢖꢉ
ꢅꢎꢄ4ꢏꢂꢉꢍꢔꢓꢔꢋꢈꢍꢔꢎꢉꢄꢅꢂꢂꢏꢂꢏ
ꢗꢕꢊꢊꢄ8ꢒꢎꢏꢕꢋꢍꢔꢎꢉ
ꢀꢁꢔꢃꢄꢏꢈꢍꢈꢃꢁꢂꢂꢍꢄꢋꢎꢉꢍꢈꢔꢉꢃꢄꢓꢔꢉꢈꢊꢄꢃꢐꢂꢋꢔꢓꢔꢋꢈꢍꢔꢎꢉꢃ ꢄꢗꢈꢔꢒꢋꢁꢔꢊꢏ
ꢞꢂꢌꢔꢋꢎꢉꢏꢕꢋꢍꢎꢒꢄꢒꢂꢃꢂꢒ!ꢂꢃꢄꢍꢁꢂꢄꢒꢔꢖꢁꢍꢄꢍꢎꢄꢌꢈ=ꢂꢄꢋꢁꢈꢉꢖꢂꢃꢄꢈꢍ
ꢈꢉꢙꢄꢍꢔꢌꢂꢄꢑꢔꢍꢁꢎꢕꢍꢄꢉꢎꢍꢔꢋꢂꢄꢔꢉꢄꢎꢒꢏꢂꢒꢄꢍꢎꢄꢔꢌꢐꢒꢎ!ꢂꢄꢏꢂꢃꢔꢖꢉ
ꢝ"ꢃꢎꢊꢂꢍꢂ
ꢅꢎꢍꢄ4ꢉꢄ8ꢒꢎꢏꢕꢋꢍꢔꢎꢉ
ꢀꢁꢔꢃꢄꢏꢈꢍꢈꢃꢁꢂꢂꢍꢄꢋꢎꢉꢍꢈꢔꢉꢃꢄꢃꢐꢂꢋꢔꢓꢔꢋꢈꢍꢔꢎꢉꢃꢄꢎꢉꢄꢈꢄꢐꢒꢎꢏꢕꢋꢍ
ꢍꢁꢈꢍꢄꢁꢈꢃꢄ"ꢂꢂꢉꢄꢏꢔꢃꢋꢎꢉꢍꢔꢉꢕꢂꢏꢄ"ꢙꢄꢗꢈꢔꢒꢋꢁꢔꢊꢏꢄꢃꢂꢌꢔꢋꢎꢉꢏꢕꢋꢍꢎꢒ
ꢀꢁꢂꢄꢏꢈꢍꢈꢃꢁꢂꢂꢍꢄꢔꢃꢄꢐꢒꢔꢉꢍꢂꢏꢄꢓꢎꢒꢄꢒꢂꢓꢂꢒꢂꢉꢋꢂꢄꢔꢉꢓꢎꢒꢌꢈꢍꢔꢎꢉꢄꢎꢉꢊꢙ
ꢀꢁꢂꢂꢂꢃꢄꢅꢆꢇꢈꢉꢆꢊꢋꢃꢌꢍꢎꢆꢈꢏꢐꢋꢑꢈꢒꢏꢇꢃꢓꢐꢒꢍꢇꢐꢅꢒꢆꢏꢐꢅꢊ
ꢔꢍꢕꢖꢃꢗꢘꢃꢚꢅꢐꢑꢅꢇꢛꢃꢁꢂꢂꢂ
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900V N-Channel QFET
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[E-
Distributor and field sales
representatives
These N-Channel enhancement mode power
field effect transistors are produced using
Fairchild's proprietary, planar stripe, DMOS
technology.
This advanced technology has been expecially
tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche
and commutation mode. These devices are well
suited for high efficiency switch mode power
supply.
Quality and reliability
This pagePrint version
Design tools
technical information
buy products
technical support
my Fairchild
back to top
Features
company
●
2.2A, 900V, R
V
= 7.2Ω @V = 10
DS(on) GS
●
●
●
●
●
Low gate charge ( typical 12 nC)
Low Crss ( typical 5.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
back to top
Product status/pricing/packaging
Product
Product status
Full Production
Pricing*
Package type
Leads
Packing method
FQB2N90TM
$0.75 TO-263(D2PAK)
2
TAPE REEL
* 1,000 piece Budgetary Pricing
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© Copyright 2002 Fairchild Semiconductor
SEARCH | Parametric | Cross Reference
sp
Fairchild Semiconductor
GO
Home >> Find products >>
find products
FQI2N90
Related Links
Products groups
900V N-Channel QFET
Analog and Mixed
Signal
Discrete
Interface
Logic
Microcontrollers
Non-Volatile
Memory
Optoelectronics
Markets and
applications
New products
Product selection and
parametric search
Cross-reference
search
Request samples
Datasheet
Download this
datasheet
Contents
How to order products
General description | Features | Product
status/pricing/packaging
Product Change Notices
(PCNs)
PDF
Support
General description
e-mail this datasheet
[E-
Distributor and field sales
representatives
These N-Channel enhancement mode power
field effect transistors are produced using
Fairchild's proprietary, planar stripe, DMOS
technology.
This advanced technology has been expecially
tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche
and commutation mode. These devices are well
suited for high efficiency switch mode power
supply.
Quality and reliability
This pagePrint version
Design tools
technical information
buy products
technical support
my Fairchild
back to top
Features
company
●
2.2A, 900V, R
V
= 7.2Ω @V = 10
DS(on) GS
●
●
●
●
●
Low gate charge ( typical 12 nC)
Low Crss ( typical 5.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
back to top
Product status/pricing/packaging
Product
Product status
Pricing*
Package type
Leads
Packing method
FQI2N90TU
Full Production
$0.75 TO-262(I2PAK)
3
RAIL
* 1,000 piece Budgetary Pricing
back to top
Home | Find products | Technical information | Buy products |
Support | Company | Contact us | Site index | Privacy policy
© Copyright 2002 Fairchild Semiconductor
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