MC74HCT245AH [ROCHESTER]

HCT SERIES, 8-BIT TRANSCEIVER, TRUE OUTPUT, PDIP20, PLASTIC, DIP-20;
MC74HCT245AH
型号: MC74HCT245AH
厂家: Rochester Electronics    Rochester Electronics
描述:

HCT SERIES, 8-BIT TRANSCEIVER, TRUE OUTPUT, PDIP20, PLASTIC, DIP-20

光电二极管 输出元件
文件: 总11页 (文件大小:901K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
High–Performance Silicon–Gate CMOS  
The MC74HCT245A is identical in pinout to the LS245. This  
device may be used as a level converter for interfacing TTL or NMOS  
outputs to High Speed CMOS inputs.  
http://onsemi.com  
The MC74HCT245A is a 3–state noninverting transceiver that is  
used for 2–way asynchronous communication between data buses.  
The device has an active–low Output Enable pin, which is used to  
place the I/O ports into high–impedance states. The Direction control  
determines whether data flows from A to B or from B to A.  
Output Drive Capability: 15 LSTTL Loads  
TTL/NMOS Compatible Input Levels  
Outputs Directly Interface to CMOS, NMOS and TTL  
Operating Voltage Range: 4.5 to 5.5 V  
Low Input Current: 1.0 µA  
MARKING  
DIAGRAMS  
20  
PDIP–20  
N SUFFIX  
CASE 738  
MC74HCT245AN  
AWLYYWW  
20  
1
1
20  
SOIC WIDE–20  
DW SUFFIX  
CASE 751D  
HCT245A  
AWLYYWW  
20  
1
1
20  
In Compliance with the Requirements Defined by JEDEC Standard  
No. 7A  
HCT  
245A  
ALYW  
TSSOP–20  
DT SUFFIX  
CASE 948G  
20  
Chip Complexity: 304 FETs or 76 Equivalent Gates  
1
LOGIC DIAGRAM  
1
2
3
4
5
6
7
8
9
18  
17  
16  
15  
14  
13  
12  
11  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
B1  
B2  
B3  
B4  
B5  
B6  
B7  
B8  
A
= Assembly Location  
WL = Wafer Lot  
YY = Year  
WW = Work Week  
A
DATA  
PORT  
B
DATA  
PORT  
PIN ASSIGNMENT  
DIRECTION  
1
2
3
4
5
6
7
8
9
20  
V
CC  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
19 OUTPUT ENABLE  
18 B1  
1
DIRECTION  
PIN 20 = V  
CC  
PIN 10 = GND  
17 B2  
19  
OUTPUT ENABLE  
16 B3  
Design Criteria  
Internal Gate Count*  
Value Units  
15 B4  
76  
1.0  
ea  
ns  
14 B5  
Internal Gate Propagation Delay  
Internal Gate Power Dissipation  
Speed Power Product  
13 B6  
12 B7  
5.0  
µW  
pJ  
GND 10  
11 B8  
0.005  
*Equivalent to a two–input NAND gate.  
FUNCTION TABLE  
ORDERING INFORMATION  
Control Inputs  
Output  
Device  
Package  
PDIP–20  
Shipping  
Enable  
Direction  
Operation  
MC74HCT245AN  
1440 / Box  
38 / Rail  
L
L
L
H
X
Data Transmitted from Bus B to Bus A  
Data Transmitted from Bus A to Bus B  
Buses Isolated (High–Impedance State)  
MC74HCT245ADW  
SOIC–WIDE  
MC74HCT245ADWR2 SOIC–WIDE 1000 / Reel  
MC74HCT245ADT  
TSSOP–20  
75 / Rail  
H
X = Don’t Care  
MC74HCT245ADTR2  
TSSOP–20 2500 / Reel  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
March, 2000 – Rev. 8  
MC74HCT245A/D  
MC74HCT245A  
MAXIMUM RATINGS*  
Symbol  
Parameter  
Value  
Unit  
V
This device contains protection  
circuitry to guard against damage  
due to high static voltages or electric  
fields. However, precautions must  
be taken to avoid applications of any  
voltage higher than maximum rated  
voltages to this high–impedance cir-  
V
DC Supply Voltage (Referenced to GND)  
DC Input Voltage (Referenced to GND)  
DC Output Voltage (Referenced to GND)  
DC Input Current, per Pin  
– 0.5 to + 7.0  
CC  
V
– 0.5 to V  
+ 0.5  
V
in  
CC  
CC  
V
out  
– 0.5 to V  
+ 0.5  
V
I
± 20  
mA  
mA  
mA  
mW  
in  
cuit. For proper operation, V and  
in  
I
I
DC Output Current, per Pin  
± 35  
± 75  
out  
V
should be constrained to the  
out  
range GND (V or V  
)
V
CC  
.
DC Supply Current, V  
and GND Pins  
CC  
in out  
CC  
Unused inputs must always be  
tied to an appropriate logic voltage  
P
D
Power Dissipation in Still Air,  
Plastic DIP†  
SOIC Package†  
TSSOP Package†  
750  
500  
450  
level (e.g., either GND or V ).  
CC  
Unused outputs must be left open.  
T
Storage Temperature  
– 65 to + 150  
C
C
stg  
T
Lead Temperature, 1 mm from Case for 10 Seconds  
(Plastic DIP, SOIC, SSOP or TSSOP Package)  
L
260  
*Maximum Ratings are those values beyond which damage to the device may occur.  
Functional operation should be restricted to the Recommended Operating Conditions.  
†Derating — Plastic DIP: – 10 mW/ C from 65 to 125 C  
SOIC Package: – 7 mW/ C from 65 to 125 C  
TSSOP Package: – 6.1 mW/ C from 65 to 125 C  
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
4.5  
0
Max  
Unit  
V
V
CC  
DC Supply Voltage (Referenced to GND)  
DC Input Voltage, Output Voltage (Referenced to GND)  
Operating Temperature, All Package Types  
Input Rise and Fall Time (Figure 1)  
5.5  
V , V  
in out  
V
CC  
V
T
A
– 55 + 125  
500  
C
t , t  
r f  
0
ns  
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)  
Guaranteed Limit  
– 55 to  
V
CC  
V
25 C  
Symbol  
Parameter  
Test Conditions  
Unit  
85 C  
125 C  
V
IH  
Minimum High–Level Input  
Voltage  
V
= 0.1 V or V  
– 0.1 V  
4.5  
5.5  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
V
out  
CC  
|I  
|
20 µA  
out  
V
Maximum Low–Level Input  
Voltage  
V
= 0.1 V or V  
– 0.1 V  
4.5  
5.5  
0.8  
0.8  
0.8  
0.8  
0.8  
0.8  
V
V
IL  
out  
CC  
|I  
|
20 µA  
out  
V
OH  
Minimum High–Level Output  
Voltage  
V
= V or V  
IH  
4.5  
5.5  
4.4  
5.4  
4.4  
5.4  
4.4  
5.4  
in  
IL  
IL  
IL  
IL  
|I  
|
20 µA  
out  
V
= V or V  
IH  
in  
|I  
|
6.0 mA  
4.5  
3.98  
3.84  
3.7  
out  
V
OL  
Maximum Low–Level Output  
Voltage  
V
V
= V or V  
IH  
4.5  
5.5  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
in  
|I  
|
20 µA  
out  
V
= V or V  
in  
IH  
|I  
|
6.0 mA  
4.5  
5.5  
5.5  
0.26  
± 0.1  
4.0  
0.33  
± 1.0  
40  
0.4  
± 1.0  
160  
out  
I
in  
Maximum Input Leakage Current  
V
in  
= V  
or GND, Pins 1 or 19  
or GND  
µA  
µA  
CC  
CC  
I
Maximum Quiescent Supply  
Current (per Package)  
V
= V  
= 0 µA  
CC  
in  
I
out  
I
Maximum Three–State  
Leakage Current  
Output in High–Impedance State  
5.5  
± 0.5  
± 5.0  
± 10  
µA  
OZ  
V
in  
= V or V  
IL  
= V  
IH  
or GND, I/O Pins  
V
out  
CC  
I  
CC  
Additional Quiescent Supply  
Current  
V
V
l
= 2.4 V, Any One Input  
–55 C  
2.9  
25 C to 125 C  
in  
in  
out  
= V  
or GND, Other Inputs  
CC  
= 0 µA  
5.5  
2.4  
mA  
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book  
(DL129/D).  
http://onsemi.com  
2
MC74HCT245A  
AC ELECTRICAL CHARACTERISTICS (V  
= 5.0 V ± 10%, C = 50 pF, Input t = t = 6.0 ns)  
L r f  
CC  
Guaranteed Limit  
– 55 to  
25 C  
Symbol  
Parameter  
Unit  
85 C  
125 C  
t
t
,
Maximum Propagation Delay, A to B or B to A  
(Figures 1 and 3)  
22  
30  
30  
12  
28  
33  
ns  
PLH  
PHL  
t
t
,
Maximum Propagation Delay, Direction or Output Enable to A or B  
(Figures 2 and 4)  
36  
36  
15  
42  
42  
18  
ns  
ns  
ns  
PLZ  
PHZ  
t
t
,
Maximum Propagation Delay, Output Enable to A or 8  
(Figures 2 and 4)  
PZL  
PZH  
t
t
,
Maximum Output Transition Time. any Output  
(Figures 1 and 3)  
TLH  
THL  
C
Maximum Input Capacitance (Pin 1 or 19)  
10  
15  
10  
15  
10  
15  
pF  
pF  
in  
C
Maximum Three–State I/O Capacitance, (I/O in High–Impedance  
State)  
out  
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON  
Semiconductor High–Speed CMOS Data Book (DL129/D).  
Typical @ 25°C, V  
= 5.0 V  
CC  
C
Power Dissipation Capacitance (Per Enabled Output)*  
pF  
97  
PD  
2
* Used to determine the no–load dynamic power consumption: P = C  
D
ON Semiconductor High–Speed CMOS Data Book (DL129/D).  
V
f + I  
V
. For load considerations, see Chapter 2 of the  
PD CC  
CC CC  
http://onsemi.com  
3
MC74HCT245A  
SWITCHING WAVEFORMS  
3.0 V  
DIRECTION  
1.3 V  
1.3 V  
GND  
3.0 V  
t
r
t
f
OUTPUT  
ENABLE  
1.3 V  
3.0 V  
GND  
GND  
INPUT  
A OR B  
2.7 V  
1.3 V  
0.3 V  
t
t
PLZ  
PZL  
HIGH  
IMPEDANCE  
t
t
PHL  
1.3 V  
t
PLH  
A OR B  
A OR B  
10%  
90%  
V
OL  
90%  
1.3 V  
10%  
OUTPUT  
B OR A  
t
PZH  
PHZ  
V
OH  
1.3 V  
HIGH  
IMPEDANCE  
t
t
THL  
TLH  
Figure 1.  
Figure 2.  
TEST POINT  
OUTPUT  
TEST POINT  
CONNECT TO V WHEN  
CC  
1 kΩ  
OUTPUT  
TESTING t  
AND t .  
PLZ  
PZL  
DEVICE  
UNDER  
TEST  
DEVICE  
UNDER  
TEST  
CONNECT TO GND WHEN  
TESTING t AND t  
.
PHZ PZH  
C *  
L
C *  
L
*Includes all probe and jig capacitance  
*Includes all probe and jig capacitance  
Figure 3.  
Figure 4. Test Circuit  
http://onsemi.com  
4
MC74HCT245A  
EXPANDED LOGIC DIAGRAM  
2
3
4
5
6
7
8
9
A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
18  
17  
16  
15  
B1  
B2  
B3  
B4  
A
DATA  
PORT  
B
DATA  
PORT  
14  
13  
12  
11  
B5  
B6  
B7  
B8  
1
DIRECTION  
19  
OUTPUT ENABLE  
http://onsemi.com  
5
MC74HCT245A  
PACKAGE DIMENSIONS  
PDIP–20  
N SUFFIX  
PLASTIC DIP PACKAGE  
CASE 738–03  
ISSUE E  
–A–  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
20  
1
11  
10  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION L TO CENTER OF LEAD WHEN  
FORMED PARALLEL.  
4. DIMENSION B DOES NOT INCLUDE MOLD  
FLASH.  
B
L
C
INCHES  
DIM MIN MAX  
1.070 25.66 27.17  
MILLIMETERS  
MIN MAX  
A
B
C
D
E
F
1.010  
0.240  
0.150  
0.015  
0.050 BSC  
0.050  
0.260  
0.180  
0.022  
6.10  
3.81  
0.39  
1.27 BSC  
1.27  
6.60  
4.57  
0.55  
–T–  
SEATING  
PLANE  
K
M
0.070  
1.77  
N
E
G
0.100 BSC  
2.54 BSC  
J
0.008  
0.110  
0.300 BSC  
0.015  
0.140  
0.21  
2.80  
7.62 BSC  
0
0.51  
0.38  
3.55  
G
F
K
L
M
N
J 20 PL  
D 20 PL  
M
M
0.25 (0.010)  
T B  
0
15  
0.040  
15  
1.01  
0.020  
M
M
0.25 (0.010)  
T A  
SO–20  
DW SUFFIX  
CASE 751D–05  
ISSUE F  
D
A
NOTES:  
1. DIMENSIONS ARE IN MILLIMETERS.  
2. INTERPRET DIMENSIONS AND TOLERANCES  
PER ASME Y14.5M, 1994.  
20  
11  
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD  
PROTRUSION.  
E
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.  
5. DIMENSION B DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE PROTRUSION SHALL  
BE 0.13 TOTAL IN EXCESS OF B DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
1
10  
MILLIMETERS  
DIM MIN  
MAX  
2.65  
0.25  
0.49  
0.32  
B
20X B  
A
A1  
B
C
D
E
e
H
h
2.35  
0.10  
0.35  
0.23  
12.65 12.95  
7.40 7.60  
1.27 BSC  
10.05 10.55  
M
S
S
T
0.25  
A
B
A
0.25  
0.50  
0
0.75  
0.90  
7
L
SEATING  
PLANE  
18X e  
A1  
C
T
http://onsemi.com  
6
MC74HCT245A  
PACKAGE DIMENSIONS  
TSSOP–20  
DT SUFFIX  
CASE 948E–02  
ISSUE A  
20X K REF  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
M
S
S
0.10 (0.004)  
T U  
V
S
Y14.5M, 1982.  
0.15 (0.006) T U  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS. MOLD  
FLASH OR GATE BURRS SHALL NOT EXCEED  
0.15 (0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL NOT  
EXCEED 0.25 (0.010) PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN  
EXCESS OF THE K DIMENSION AT MAXIMUM  
MATERIAL CONDITION.  
K
K1  
20  
11  
2X L/2  
J J1  
B
L
–U–  
PIN 1  
IDENT  
SECTION N–N  
1
10  
0.25 (0.010)  
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
N
S
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE W.  
0.15 (0.006) T U  
M
A
–V–  
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN  
MAX  
0.260  
0.177  
0.047  
0.006  
0.030  
A
B
C
6.40  
4.30  
–––  
6.60 0.252  
4.50 0.169  
1.20  
N
–––  
D
F
0.05  
0.50  
0.15 0.002  
0.75 0.020  
F
G
H
J
J1  
K
K1  
L
0.65 BSC  
0.026 BSC  
DETAIL E  
0.27  
0.09  
0.09  
0.19  
0.19  
0.37  
0.011  
0.015  
0.008  
0.006  
0.012  
0.010  
0.20 0.004  
0.16 0.004  
0.30 0.007  
0.25 0.007  
–W–  
C
6.40 BSC  
0.252 BSC  
G
D
M
0
8
0
8
H
DETAIL E  
0.100 (0.004)  
–T– SEATING  
PLANE  
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7
MC74HCT245A  
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are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
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alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
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MC74HCT245A/D  
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Part Nomenclature  
The MC74HCT245A is identical in pinout to the LS245. This device may be used as a level converter for interfacing TTL or  
NMOS outputs to High Speed CMOS inputs.  
Tech Support  
The MC74HCT245A is a 3-state noninverting transceiver that is used for 2-way asynchronous communication between data  
buses. The device has an active-low Output Enable pin, which is used to place the I/O ports into high-impedance states.  
The Direction control determines whether data flows from A to B or from B to A.  
Features:  
l Output Drive Capability: 15 LSTTL Loads  
l TTL/NMOS Compatible Input Levels  
l Outputs Directly Interface to CMOS, NMOS and TTL  
l Operating Voltage Range: 4.5 to 5.5 V  
l Low Input Current: 1.0 mA  
l In Compliance with the Requirements Defined by JEDEC Standard  
No. 7A  
l Chip Complexity: 304 FETs or 76 Equivalent Gates  
Orderable Parts  
Package Pin  
Desc. Count Outline  
Case  
Action Orderable Part  
Short Desc.  
Status  
Price/Unit Pack Qty  
N/A  
N/A  
MC74HCT245ADT  
MC74HCT245ADW  
Octal 3-State  
Non-Inverting  
Bus/Transceiver  
TSSOP  
SOIC  
20  
20  
948E-02 Active  
751D-05 Active  
751D-05 Active  
$0.320  
$0.280  
75  
38  
Octal 3-State  
Non-Inverting  
Bus/Transceiver  
N/A  
N/A  
MC74HCT245ADWR2 Tape and Reel  
SOIC  
N/A  
20  
$0.280  
$0.280  
1000  
40  
MC74HCT245AF  
Octal 3-State  
Non-Inverting  
Bus/Transceiver  
N/A  
N/A  
Active  
N/A  
N/A  
N/A  
MC74HCT245AFEL  
MC74HCT245AFL1  
MC74HCT245AN  
Tape and Reel  
Tape and Reel  
N/A  
N/A  
N/A  
20  
N/A  
Active  
$0.280  
$0.280  
2000  
360  
N/A  
N/A  
LifeTime  
Active  
Octal 3-State  
Non-Inverting  
Bus/Transceiver  
PDIP  
738-03  
N/A  
N/A  
MC74HCT245ADTR2  
MC74HCT245AH  
Tape and Reel  
TSSOP  
PDIP  
14  
948G-01 Active,  
Not Rec  
$0.320  
$0.280  
2500  
360  
Octal 3-State  
Non-Inverting  
Transceiver  
804-01  
Active,  
Not Rec  
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