MC74VHC244MEL [ROCHESTER]

AHC/VHC SERIES, DUAL 4-BIT DRIVER, TRUE OUTPUT, PDSO20, EIAJ, SOIC-20;
MC74VHC244MEL
型号: MC74VHC244MEL
厂家: Rochester Electronics    Rochester Electronics
描述:

AHC/VHC SERIES, DUAL 4-BIT DRIVER, TRUE OUTPUT, PDSO20, EIAJ, SOIC-20

驱动 光电二极管 输出元件
文件: 总9页 (文件大小:900K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MC74VHC244  
Octal Bus Buffer  
The MC74VHC244 is an advanced high speed CMOS octal bus  
buffer fabricated with silicon gate CMOS technology.  
The MC74VHC244 is a noninverting 3--state buffer, and has two  
active--low output enables. This device is designed to be used with  
3--state memory address drivers, etc.  
The internal circuit is composed of three stages, including a buffer  
output which provides high noise immunity and stable output. The  
inputs tolerate voltages up to 7 V, allowing the interface of 5 V systems  
to 3 V systems.  
http://onsemi.com  
MARKING DIAGRAM  
20  
VHC244  
AWLYYWWG  
High Speed: tPD = 3.9 ns (Typ) at VCC = 5 V  
20  
1
Low Power Dissipation: ICC = 4 mA (Max) at TA = 25°C  
High Noise Immunity: VNIH = VNIL = 28% VCC  
Power Down Protection Provided on Inputs  
Balanced Propagation Delays  
1
SOIC--20 WB  
DW SUFFIX  
CASE 751D  
20  
Designed for 2 V to 5.5 V Operating Range  
Low Noise: VOLP = 0.9 V (Max)  
VHC  
244  
ALYW  
20  
1
Pin and Function Compatible with Other Standard Logic Families  
Latchup Performance Exceeds 300 mA  
ESD Performance: Human Body Model > 2000 V  
Machine Model > 200 V  
Chip Complexity: 136 FETs  
Pb--Free Packages are Available*  
1
TSSOP--20  
DT SUFFIX  
CASE 948E  
20  
1
74VHC244  
AWLYWW  
20  
1
SOIC EIAJ--20  
M SUFFIX  
CASE 967  
2
4
6
8
18  
16  
14  
12  
A1  
A2  
A3  
A4  
YA1  
YA2  
YA3  
YA4  
A
= Assembly Location  
= Year  
WL, L = Wafer Lot  
YY, Y  
WW, W = Work Week  
PIN ASSIGNMENT  
DATA  
INPUTS  
NONINVERTING  
OUTPUTS  
11  
13  
15  
17  
9
7
5
3
OEA  
1
20  
V
CC  
B1  
B2  
B3  
B4  
YB1  
YB2  
YB3  
YB4  
A1  
YB4  
A2  
2
3
4
5
6
7
8
9
19 OEB  
18 YA1  
17 B4  
16 YA2  
15 B3  
14 YA3  
13 B2  
12 YA4  
11 B1  
YB3  
A3  
YB2  
A4  
1
19  
OEA  
OEB  
OUTPUT  
ENABLES  
YB1  
GND 10  
Figure 1. Logic Diagram  
ORDERING INFORMATION  
See detailed ordering and shipping information in the  
Ordering Information Table on page 2 of this data sheet.  
*For additional information on our Pb--Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 -- Rev. 7  
MC74VHC244/D  
MC74VHC244  
FUNCTION TABLE  
INPUTS  
OUTPUTS  
OEA, OEB  
A, B  
L
YA, YB  
L
L
L
H
Z
H
H
X
ORDERING INFORMATION  
Device  
Package  
Shipping  
MC74VHC244DW -- OBSOLETE*  
MC74VHC244DWR2  
MC74VHC244DT  
SOIC--20 WB  
SOIC--20 WB  
38 Units/Rail  
1000/Tape & Reel  
75 Units/Rail  
TSSOP--20  
(Pb--Free)  
MC74VHC244DTR2  
TSSOP--20  
(Pb--Free)  
2500/Tape & Reel  
1600 Units/Box  
MC74VHC244M -- OBSOLETE*  
MC74VHC244MEL  
SOIC EIAJ--20  
(Pb--Free)  
SOIC EIAJ--20  
(Pb--Free)  
2000/Tape & Reel  
*This device is obsolete, information available for reference.  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
MAXIMUM RATINGS (Note 1)  
Symbol  
Parameter  
Value  
Unit  
V
V
V
V
Positive DC Supply Voltage  
Digital Input Voltage  
--0.5 to +7.0  
--0.5 to +7.0  
CC  
IN  
V
DC Output Voltage  
--0.5 to V +0.5  
V
OUT  
CC  
I
I
I
I
Input Diode Current  
-- 2 0  
±20  
±25  
±75  
mA  
mA  
mA  
mA  
mW  
IK  
Output Diode Current  
DC Output Current, per Pin  
OK  
OUT  
CC  
DC Supply Current, V and GND Pins  
CC  
P
Power Dissipation in Still Air  
SOIC  
TSSOP  
500  
450  
D
T
Storage Temperature Range  
ESD Withstand Voltage  
--65 to +150  
°C  
STG  
V
Human Body Model (Note 2)  
Machine Model (Note 3)  
>2000  
>200  
V
ESD  
Charged Device Model (Note 4)  
>2000  
I
Latchup Performance  
Above V and Below GND at 125°C (Note 5)  
±300  
mA  
LATCHUP  
CC  
θ
JA  
Thermal Resistance, Junction--to--Ambient  
SOIC  
96  
°C/W  
TSSOP  
128  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
1. V and V should be constrained to the range GND (V orV ) V . Unused inputs must always be tiedto anappropriate logic voltage  
in  
out  
in  
out  
CC  
level (e.g., either GND or V ). Unused outputs must be left open.  
CC  
2. Tested to EIA/JESD22--A114--A  
3. Tested to EIA/JESD22--A115--A  
4. Tested to JESD22--C101--A  
5. Tested to EIA/JESD78  
http://onsemi.com  
2
MC74VHC244  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Characteristics  
Min  
2.0  
0
Max  
5.5  
Unit  
V
V
V
V
DC Supply Voltage  
DC Input Voltage  
DC Output Voltage  
CC  
IN  
5.5  
V
0
V
V
OUT  
CC  
T
Operating Temperature Range, all Package Types  
Input Rise or Fall Time  
-- 5 5  
0
125  
°C  
ns/V  
A
t , t  
r
V
V
= 3.3 V + 0.3 V  
= 5.0 V + 0.5 V  
100  
20  
f
CC  
CC  
DEVICE JUNCTION TEMPERATURE VERSUS  
TIME TO 0.1% BOND FAILURES  
Junction  
Temperature °C  
FAILURE RATE OF PLASTIC = CERAMIC  
UNTIL INTERMETALLICS OCCUR  
Time, Hours  
Time, Years  
80  
1,032,200  
419,300  
178,700  
79,600  
37,000  
17,800  
8,900  
117.8  
47.9  
20.4  
9.4  
90  
100  
110  
120  
130  
140  
1
4.2  
1
10  
100  
1000  
2.0  
TIME, YEARS  
1.0  
Figure 2. Failure Rate vs. Time Junction Temperature  
DC CHARACTERISTICS (Voltages Referenced to GND)  
V
T
A
= 25°C  
T
A
85°C  
-- 5 5 °C T 125°C  
A
CC  
Symbol  
Parameter  
Condition  
(V)  
Min  
Typ  
Max  
Min  
Max  
1.5  
Min  
Max  
Unit  
V
V
V
Minimum High--Level  
Input Voltage  
2.0  
1.5  
1.5  
1.5  
V
IH  
3.0 to  
5.5  
V
CCX  
V
CCX  
V
CCX  
V
CCX  
0.7  
0.7  
0.7  
0.7  
Maximum Low--Level  
Input Voltage  
2.0  
0.5  
0.5  
0.5  
V
V
IL  
3.0 to  
5.5  
V
CCX  
V
CCX  
V
CCX  
0.3  
0.3  
0.3  
V
= V or V  
2.0  
3.0  
4.5  
1.9  
2.9  
4.4  
2.0  
3.0  
4.5  
1.9  
2.9  
4.4  
1.9  
2.9  
4.4  
Maximum High--Level  
Output Voltage  
IN  
IH  
IL  
IL  
IL  
IL  
OH  
I
= --50 mA  
OH  
V
IN  
= V or V  
IH  
I
= --4 mA  
3.0  
4.5  
2.58  
3.94  
2.48  
3.8  
2.34  
3.66  
OH  
I
= --8 mA  
OH  
V
IN  
= V or V  
2.0  
3.0  
4.5  
0.0  
0.0  
0.0  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
V
Maximum Low--Level  
Output Voltage  
V
IH  
OL  
I
OL  
= 50 mA  
V
IN  
= V or V  
IH  
I
= 4 mA  
= 8 mA  
3.0  
4.5  
0.36  
0.36  
0.44  
0.44  
0.52  
0.52  
OH  
I
OH  
I
I
Input Leakage Current  
V
= 5.5 V or GND  
0 to  
5.5  
±0.1  
±1.0  
±1.0  
mA  
mA  
IN  
IN  
Maximum 3--State  
Leakage Current  
V
V
= V or V  
IL  
5.5  
±0.25  
±2.5  
±2.5  
OZ  
CC  
IN  
IH  
= V or GND  
OUT  
CC  
I
Maximum Quiescent  
Supply Current  
(per package)  
V
IN  
= V or GND  
5.5  
4.0  
40.0  
40.0  
mA  
CC  
http://onsemi.com  
3
MC74VHC244  
AC ELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)  
r
f
-- 5 5 °C T  
A
125°C  
T
A
= 25°C  
T 85°C  
A
Min  
Typ  
Max  
Min  
Max  
Min  
Max  
Symbol  
Parameter  
Test Conditions  
Unit  
t
t
,
Maximum Propagation  
Delay, A to YA or  
B to YB  
V
V
V
= 3.3 ± 0.3 V  
C
C
= 15 pF  
= 50 pF  
5.8  
8.3  
8.4  
11.9  
1.0  
1.0  
10.0  
13.5  
1.0  
1.0  
11.0  
14.5  
ns  
PLH  
CC  
CC  
CC  
L
L
PHL  
= 5.0 ± 0.5 V  
C
L
C
L
= 15 pF  
= 50 pF  
3.9  
5.4  
5.5  
7.5  
1.0  
1.0  
6.5  
8.5  
1.0  
1.0  
7.5  
9.5  
t
t
,
Output Enable Time  
OEA to YA or  
OEB to YB  
= 3.3 ± 0.3 V  
= 1 kΩ  
C
L
C
L
= 15 pF  
= 50 pF  
6.6  
9.1  
10.6  
14.1  
1.0  
1.0  
12.5  
16.0  
1.0  
1.0  
13.5  
17.0  
ns  
ns  
ns  
PZL  
R
PZH  
L
V
R
= 5.0 ± 0.5 V  
= 1 kΩ  
C
L
C
L
= 15 pF  
= 50 pF  
4.7  
6.2  
7.3  
9.3  
1.0  
1.0  
8.5  
10.5  
1.0  
1.0  
9.5  
11.5  
CC  
L
t
t
,
Output Disable Time  
OEA to YA or  
OEB to YB  
V
R
= 3.3 ± 0.3 V  
= 1 kΩ  
C
C
C
C
= 50 pF  
= 50 pF  
= 50 pF  
= 50 pF  
10.3  
14.0  
9.2  
1.5  
1.0  
10  
1.0  
16.0  
10.5  
1.5  
1.0  
17.0  
11.5  
1.5  
PLZ  
CC  
L
L
L
L
PHZ  
L
V
R
= 5.0 ± 0.5 V  
= 1 kΩ  
6.7  
1.0  
1.0  
CC  
L
t
,
Output to Output Skew  
V
= 3.3 ± 0.3 V  
CC  
OSLH  
t
(Note 6)  
OSHL  
V
= 5.0 ± 0.5 V  
1.0  
1.5  
CC  
(Note 6)  
C
in  
Maximum Input  
Capacitance  
4
6
10  
10  
pF  
pF  
C
Maximum Three--State  
Output Capacitance  
(Output in High--Impedance  
State)  
out  
Typical @ 25°C, V = 5.0V  
CC  
19  
C
Power Dissipation Capacitance (Note 7)  
= |t  
pF  
PD  
6. Parameter guaranteed by design. t  
-- t  
|, t  
= |t  
-- t  
|.  
PHLn  
OSLH  
PLHm  
PLHn OSHL  
PHLm  
7. C is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.  
PD  
Average operating current can be obtained by the equation: I  
) = C ¯ V ¯ f + I /8 (per bit). C is used to determine the no--load  
CC(OPR  
CC  
PD CC in CC PD  
2
dynamic power consumption; P = C ¯ V  
¯ f + I ¯ V  
.
D
PD  
CC  
in  
CC  
NOISE CHARACTERISTICS (Input t = t = 3.0 ns, C = 50 pF, V = 5.0 V)  
r
f
L
CC  
T
A
= 25°C  
Typ  
Max  
Symbol  
Parameter  
Unit  
V
V
Quiet Output Maximum Dynamic V  
0.6  
0.9  
-- 0 . 9  
3.5  
OLP  
OLV  
OL  
V
Quiet Output Minimum Dynamic V  
-- 0 . 6  
V
OL  
V
Minimum High Level Dynamic Input Voltage  
Maximum Low Level Dynamic Input Voltage  
V
IHD  
V
1.5  
V
ILD  
http://onsemi.com  
4
MC74VHC244  
SWITCHING WAVEFORMS  
V
CC  
V
CC  
A or B  
OEA or OEB  
50%  
50%  
GND  
GND  
t
t
PLZ  
PZL  
HIGH  
t
t
PHL  
PLH  
IMPEDANCE  
YA or YB  
50% V  
CC  
YA or YB  
YA or YB  
50% V  
CC  
V
V
+0.3V  
OL  
t
t
PHZ  
PZH  
--0.3V  
OH  
50% V  
CC  
HIGH  
IMPEDANCE  
Figure 3. Switching Waveform  
Figure 4. Switching Waveform  
TEST CIRCUITS  
TEST POINT  
OUTPUT  
TEST POINT  
CONNECT TO V WHEN  
CC  
1 kΩ  
OUTPUT  
TESTING t AND t  
.
PLZ  
PZL  
CONNECT TO GND WHEN  
TESTING t AND t  
DEVICE  
UNDER  
TEST  
DEVICE  
UNDER  
TEST  
.
PZH  
PHZ  
C *  
L
C *  
L
*Includes all probe and jig capacitance  
*Includes all probe and jig capacitance  
Figure 5. Test Circuit  
Figure 6. Test Circuit  
INPUT  
Figure 7. Input Equivalent Circuit  
http://onsemi.com  
5
MC74VHC244  
OUTLINE DIMENSIONS  
SOIC--20 WB  
DW SUFFIX  
CASE 751D--05  
ISSUE G  
D
A
θ
NOTES:  
1. DIMENSIONS ARE IN MILLIMETERS.  
2. INTERPRET DIMENSIONS AND TOLERANCES  
PER ASME Y14.5M, 1994.  
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD  
PROTRUSION.  
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.  
5. DIMENSION B DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE PROTRUSION  
SHALL BE 0.13 TOTAL IN EXCESS OF B  
DIMENSION AT MAXIMUM MATERIAL  
CONDITION.  
20  
11  
10  
E
B
1
MILLIMETERS  
DIM MIN  
MAX  
2.65  
0.25  
0.49  
0.32  
12.95  
7.60  
20X B  
A
A1  
B
C
D
E
2.35  
0.10  
0.35  
0.23  
12.65  
7.40  
M
S
S
T
0.25  
A
B
A
e
H
h
L
θ
1.27 BSC  
10.05  
0.25  
0.50  
10.55  
0.75  
0.90  
SEATING  
PLANE  
18X  
e
0
7
_
_
A1  
C
T
TSSOP--20  
DT SUFFIX  
CASE 948E--02  
ISSUE B  
20X K REF  
NOTES:  
M
S
S
0.10 (0.004)  
T U  
V
S
1. DIMENSIONING AND TOLERANCING  
PER ANSI Y14.5M, 1982.  
0.15 (0.006) T U  
K
K1  
2. CONTROLLING DIMENSION:  
MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE  
MOLD FLASH, PROTRUSIONS OR GATE  
BURRS. MOLD FLASH OR GATE BURRS  
SHALL NOT EXCEED 0.15 (0.006) PER  
SIDE.  
20  
11  
2X L/2  
J
J1  
B
L
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION  
SHALL NOT EXCEED 0.25 (0.010) PER  
SIDE.  
-- U --  
PIN 1  
IDENT  
SECTION N--N  
1
10  
5. DIMENSION K DOES NOT INCLUDE  
DAMBAR PROTRUSION. ALLOWABLE  
DAMBAR PROTRUSION SHALL BE 0.08  
(0.003) TOTAL IN EXCESS OF THE K  
DIMENSION AT MAXIMUM MATERIAL  
CONDITION.  
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE --W--.  
0.25 (0.010)  
N
S
0.15 (0.006) T U  
M
A
-- V --  
N
F
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN  
MAX  
0.260  
0.177  
0.047  
0.006  
0.030  
DETAIL E  
A
B
C
6.40  
4.30  
-- -- --  
6.60 0.252  
4.50 0.169  
1.20  
-- -- --  
-- W --  
D
F
0.05  
0.50  
0.15 0.002  
0.75 0.020  
C
G
H
J
J1  
K
K1  
L
0.65 BSC  
0.026 BSC  
0.27  
0.09  
0.09  
0.19  
0.19  
0.37  
0.011  
0.015  
0.008  
0.006  
0.012  
0.010  
G
D
H
0.20 0.004  
0.16 0.004  
0.30 0.007  
0.25 0.007  
DETAIL E  
0.100 (0.004)  
-- T -- SEATING  
PLANE  
6.40 BSC  
0.252 BSC  
M
0
8
0
8
_
_
_
_
http://onsemi.com  
6
MC74VHC244  
OUTLINE DIMENSIONS  
SOIC EIAJ--20  
M SUFFIX  
CASE 967--01  
ISSUE O  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD  
FLASH OR PROTRUSIONS AND ARE MEASURED  
AT THE PARTING LINE. MOLD FLASH OR  
PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006)  
PER SIDE.  
L
20  
11  
E
Q
1
4. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
H
E
E
_
M
5. THE LEAD WIDTH DIMENSION (b) DOES NOT  
INCLUDE DAMBAR PROTRUSION. ALLOWABLE  
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)  
TOTAL IN EXCESS OF THE LEAD WIDTH  
DIMENSION AT MAXIMUM MATERIAL CONDITION.  
DAMBAR CANNOT BE LOCATED ON THE LOWER  
RADIUS OR THE FOOT. MINIMUM SPACE  
BETWEEN PROTRUSIONS AND ADJACENT LEAD  
TO BE 0.46 ( 0.018).  
L
1
10  
DETAIL P  
Z
D
VIEW P  
MILLIMETERS  
INCHES  
e
A
DIM MIN  
MAX  
2.05  
0.20 0.002  
0.50 0.014  
0.27 0.007  
12.80 0.486  
5.45 0.201  
MIN  
-- -- --  
MAX  
0 . 0 8 1  
0.008  
0.020  
0.011  
0.504  
0.215  
c
A
1
b
c
-- -- --  
0.05  
0.35  
0.18  
12.35  
5.10  
A
D
E
e
A
1
b
1.27 BSC  
0.050 BSC  
M
0.10 (0.004)  
0.13 (0.005)  
H
E
7.40  
0.50  
1.10  
8.20 0.291  
0.85 0.020  
1.50 0.043  
0.323  
0.033  
0.059  
L
L
E
M
Q
Z
0
0.70  
-- -- --  
10  
10  
0.035  
0 . 0 3 2  
0
_
_
_
_
0.90 0.028  
0 . 8 1 -- -- --  
1
http://onsemi.com  
7
MC74VHC244  
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MC74VHC244/D  

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