SS8050DBU [ROCHESTER]
1500mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92;
| 型号： | SS8050DBU |
| 厂家： | 
Rochester Electronics |
| 描述： | 1500mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 放大器 晶体管 |
| 文件： | 总7页 (文件大小：758K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS8050
2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
•
•
•
Complimentary to SS8550
Collector Current: I =1.5A
Collector Power Dissipation: P =2W (T =25°C)
C
C
C
TO-92
1. Emitter 2. Base 3. Collector
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Ratings
Units
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
40
CBO
25
V
CEO
EBO
6
1.5
V
I
A
C
P
Collector Power Dissipation
Junction Temperature
Storage Temperature
1
W
C
T
T
150
°C
°C
J
-65 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
40
25
6
Typ.
Max.
Units
BV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I =100µA, I =0
V
V
CBO
CEO
EBO
C
E
BV
BV
I =2mA, I =0
C B
I =100µA, I =0
V
E
C
I
I
V
=35V, I =0
100
100
nA
nA
CBO
EBO
CB
EB
E
Emitter Cut-off Current
V
=6V, I =0
C
h
h
h
DC Current Gain
V
V
V
=1V, I =5mA
45
85
40
135
160
110
FE1
FE2
FE3
CE
CE
CE
C
=1V, I =100mA
300
C
=1V, I =800mA
C
V
V
V
(sat)
(sat)
(on)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
I =800mA, I =80mA
0.28
0.98
0.66
9.0
0.5
1.2
1
V
V
CE
BE
BE
C
B
I =800mA, I =80mA
C
B
V
=1V, I =10mA
V
CE
C
C
Output Capacitance
V
=10V, I =0
pF
ob
CB
E
f=1MHz
f
Current Gain Bandwidth Product
V
=10V, I =50mA
100
190
MHz
T
CE
C
h
Classification
FE
Classification
B
C
D
h
85 ~ 160
120 ~ 200
160 ~ 300
FE2
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
Typical Characteristics
0.5
1000
100
10
VCE = 1V
IB = 3.0mA
0.4
0.3
0.2
0.1
IB = 2.5mA
IB = 2.0mA
IB = 1.5mA
IB = 1.0mA
IB = 0.5mA
1.6
1
0.1
0
0.4
0.8
1.2
2.0
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10000
1000
100
100
10
1
IC = 10 IB
VCE = 1V
VBE(sat)
VCE(sat)
10
0.1
0.1
0.0
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
1000
1000
100
10
VCE = 10V
IE = 0
f = 1MHz
100
10
1
1
1
10
100
1
10
100
400
VCB [V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
Package Demensions
TO-92
+0.25
–0.15
4.58
0.46 ±0.10
+0.10
–0.05
1.27TYP
1.27TYP
0.38
[1.27 ±0.20
]
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
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As used herein:
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which, (a) are intended for surgical implant into the body,
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when properly used in accordance with instructions for use
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
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●
●
Complementary to SS8550
Collector Current : I = 1.5A
Quality and reliability
C
This page
Print version
●
Collector Dissipation: P = 2W
C
Design tools
(T =25°C )
C
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2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
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SS8050CCHBU
SS8050DTA
Product status
Full Production
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Pricing*
Package type Leads
Packing method
BULK
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
$0.053
$0.053
$0.053
$0.053
$0.053
$0.053
$0.053
$0.053
$0.053
$0.053
3
3
3
3
3
3
3
3
3
3
TAPE REEL
TAPE REEL
BULK
SS8050DIUTA
SS8050BBU
SS8050DIUBU
SS8050DBU
SS8050CTA
BULK
BULK
TAPE REEL
TAPE REEL
BULK
SS8050CIUTA
SS8050CIUBU
SS8050CBU
BULK
Product Folder - Fairchild P/N SS8050 - NPN Epitaxial Silicon Transistor
TO-92
SS8050DCHBU
Full Production
$0.053
3
BULK
* 1,000 piece Budgetary Pricing
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