2SC5866QTL [ROHM]
Transistor;
| 型号： | 2SC5866QTL |
| 厂家： | 
ROHM |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5866
Transistor
Medium power transistor (60V, 2A)
2SC5866
!External dimensions (Units : mm)
!Features
1) High speed switching. (Tf : Typ. : 35ns at IC = 2A)
2) Low saturation voltage, typically
(Typ. : 200mV at IC = 1.0m, IB = 0.1A)
3) Strong discharge power for inductive load and
capacitance load.
2.8
1.6
TSMT3
4) Complements the 2SA2094
Each lead has same dimensions
(1)Base
0.3 0.6
(2)Emitter
(3)Collector
Abbreviated symbol : VL
!Applications
Low frequency amplifier
High speed switching
!Structure
NPN Silicon epitaxial planar transistor
!Packaging specifications
Package
Code
Taping
TL
Type
Basic ordering unit
(pieces)
3000
2SC5866
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
60
60
6
V
V
V
A
A
2
Collector current
Power dissipation
1
2
ICP
4
PC
500
mW
Junction temperature
Tj
150
°C
°C
Range of storage temperature
Tstg
−55~+150
1 Pw=10ms
2 Each terminal mounted on a recommended land.
1/3
2SC5866
Transistor
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
−
Conditions
Unit
V
Collector−base breakdown voltage
Collector−emitter breakdown voltage
BVCBO
BVCEO
BVEBO
60
60
6
−
I
I
C
=
100µA
−
−
−
V
C=
1mA
V
−
I
E
=
100µA
Emitter−base breakdown voltage
Collector cut-off current
Emitter cut-off current
−
−
µA
µA
V
V
CB
EB
=40V
−
−
−
1.0
1.0
500
390
−
I
CBO
EBO
CE(sat)
FE
=4V
I
1
Collector−emitter staturation voltage
DC current gain
IC=1A, IB=0.1A
V
200
mV
−
−
120
−
V
CE
=2V, I
C
=100mA
h
1
Transition frequency
200
fT
MHz
pF
V
CE
CB
=
10V, I
10V, I
E
E
= −100mA, f=10MHz
−
V
=
=0mA, f=1MHz
Collector output capacitance
Turn-on time
−
−
−
−
10
50
C
ob
on
stg
ns
ns
ns
T
−
−
−
I
I
I
C=
2A,
2000mA
B2= −200mA
B1
=
Storage time
120
T
2
Fall time
Tf
VCC 25V
35
1 Non repetitive pulse
2 See switching charactaristics measurement circuits
!hFE RANK
Q
R
120-270
180-390
!Electrical characteristic curves
10
1000
100
10
1000
V
CE=2V
Ta=25°C
CC=25V
/I =10/1
1ms
V
Ta=125°C
I
C B
Tstg
10ms
100ms
1
0.1
100
Ta=25°C
Ta= −40°C
DC
Tf
Ton
10
0.01
0.001
Single non
repoetitive pulse
1
0.001
0.01
0.1
1
10
0.01
0.1
1
10
100
0.01
0.1
1
C
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : I
(A)
Fig.2 Switching Time
Fig.1 Safe operating area
Fig.3 DC current gain vs. collector
current
1000
10
10
Ta=25°C
CE=5V
Ta=25°C
IC/IB=10/1
V
1
0.1
V
CE=2V
1
100
10
1
V
CE=3V
Ta=125°C
0.1
Ta=25°C
Ta= −40°C
IC/IB=20/1
IC/IB=10/1
0.01
0.001
0.01
0.001
0.01
0.1
1
10
0.01
0.1
1
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C (A)
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain vs. collector
current
Fig.5 Collector-emitter saturation voltage
vs. Collector Current
Fig.6 Collector-emitter saturation voltage
vs. collector current
2/3
2SC5866
Transistor
10
1000
100
10
Ta=25°C
IC/IB=10/1
V
CE=2V
V
CE=10V
Ta= −40°C
1
1
Ta=125°C
Ta=25°C
Ta=125°C
0.1
Ta=25°C
0.1
10
1
Ta= −40°C
0.01
0.01
0
0.5
1
1.5
−0.001
−0.01
−0.1
−1
(A
−10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
BASE TO EMITTER VOLTAGE : VBE (V)
EMITTER CURRENT : I
E
)
Fig.7 Base-emitter saturation voltage
vs. collector current
Fig.8 Ground emitter propagation
characteristics
Fig.9 Transition frequency
100
Ta=25°C
f=1MHz
10
1
0.1
1
10
100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.10 Collector output capacitance
!Switching characteristics measurement circuits
RL=12.5Ω
V
IN
I
I
B1
B2
I
C
V
CC 25V
P
W
P
W
50 S
Duty cycle 1%
I
B1
I
B2
Base current
waveform
90%
I
C
Collector current
waveform
10%
Ton
Tstg Tf
3/3
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