2SC5868TL [ROHM]
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TSMT3, 3 PIN;
| 型号： | 2SC5868TL |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TSMT3, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：929K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Medium power transistor (60V, 0.5A)
2SC5868
Features
Dimensions (Unit : mm)
1) High speed switching.
(Tf : Typ. : 80ns at IC = 500mA)
2) Low saturation voltage, typically
TSMT3
2.8
1.6
:
(Typ. 75mV at IC = 100mA, IB = 10mA)
3) Strong discharge power for inductive load
and capacitance load.
4) Complements the 2SA2090
(1) Base
(2) Emitter
(3) Collector
0.3 0.6
Each lead has same dimensions
Applications
Abbreviated symbol : VS
Small signal low frequency amplifier
High speed switching
Structure
NPN Silicon epitaxial planar transistor
Packaging specifications
Package
Taping
TL
Code
Type
Basic ordering unit (pieces)
3000
2SC5868
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Symbol
Limits
Unit
VCBO
VCEO
VEBO
V
V
60
60
Collector-emitter voltage
Emitter-base voltage
V
6
DC
I
C
A
0.5
Collector current
∗1
∗2
Pulsed
I
CP
A
1.0
P
C
mW
°C
°C
Power dissipation
500
Tj
Junction temperature
150
Tstg
Range of storage temperature
−55 to 150
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land
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2011.03 - Rev.A
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2SC5868
Data Sheet
Electrical characteristics (Ta=25C)
Parameter
Symbol
BVCEO
BVCBO
BVEBO
Min.
60
60
6
Typ.
Max.
−
−
−
1.0
Unit
V
Condition
=1mA
=100μA
=100μA
CB=40V
EB=4V
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
−
−
−
−
−
I
I
I
C
C
V
V
E
I
CBO
μA
μA
−
−
V
V
I
EBO
1.0
Emitter cut-off current
∗1
∗1
I
I
C
=100mA
=10mA
CE=2V
V
CE (sat)
300
390
mV
Collector-emitter saturation voltage
DC current gain
−
75
B
V
hFE
−
120
−
I
C=50mA
V
CE=10V
f
T
−
−
MHz
pF
Transition frequency
−
−
300
5
I
E
= −100mA
f=10MHz
CB=10V
=0mA
f=1MHz
V
Cob
Corrector output capacitance
IE
∗2
I
I
I
C
=500mA
Ton
Tstg
Tf
−
−
−
ns
ns
ns
Turn-on time
Storage time
Fall time
−
−
−
70
130
80
BB21= −50mA
=50mA
VCC 25V
∗1 Non repetitive pulse
∗2 See Switching charactaristics measurement circuits
hFE RANK
Q
R
120−270
180−390
Electrical characteristic curves
1000
1000
100
10
1000
100
10
Ta=25°C
V
CE=2V
Ta=25°C
V
CC=25V
IC / IB=10 / 1
Tstg
Ta=125°C
VCE=5V
VCE=3V
VCE=2V
Ta=25°C
Ta= −40°C
100
Tf
Ton
10
0.01
1
1
0.1
1
10
0.001
0.01
0.1
1
0.001
0.01
0.1
1
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 Switching Time
Fig.2 DC Current Gain vs.
Fig.3 DC Current Gain vs.
Collector Current (Ι)
Collector Current (ΙΙ)
10
1
10
10
IC / IB=10 / 1
I
C
/ I
B
=10 / 1
Ta=25°C
1
0.1
1
0.1
Ta=125°C
Ta=25°C
I
I
C
C
/ I
/ I
B
B
=20 / 1
=10 / 1
Ta=125°C
Ta=25°C
Ta= −40°C
Ta= −40°C
0.1
0.01
0.01
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
0.001
0.01
0.1
1
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)
Fig.5 Collector-Emitter Saturation
Fig.6 Base-Emitter Saturation
Voltage vs. Collecter Current
Voltage vs. Collector Current (ΙΙ)
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2011.03 - Rev.A
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○ 2011 ROHM Co., Ltd. All rights reserved.
2SC5868
Data Sheet
1
1000
100
10
100
V
CE=2V
Ta=25°C
CE=10V
Ta=25°C
f=1MHz
V
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
10
1
0.1
0.01 0
1
1
10
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1 1.1 1.2 1.3 1.4 1.5 1.6
0.001
0.01
0.1
1
10
BASE TO COLLECTOR VOLTAGE : VCB (V)
Fig.9 Collector Output Capacitance
BASE TO EMITTER VOLTAGE : VBE (V)
EMITTER CURRENT : IE (A)
Fig.7 Grounded Emitter
Fig.8 Transition Frequency
Propagation Characteristics
Switching characteristics measurement circuits
RL=50Ω
VIN
I
I
B1
B2
I
C
VCC 25V
P
W
P
W
50 S
Duty cycle ≤ 1%
I
B1
I
B2
Base current
waveform
90%
I
C
Collector current
waveform
10%
Ton
Tstg Tf
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○ 2011 ROHM Co., Ltd. All rights reserved.
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