2SK3541 [ROHM]
Small switching (30V, 0.1A); 小开关（ 30V ， 0.1A ）
| 型号： | 2SK3541 |
| 厂家： | 
ROHM |
| 描述： | Small switching (30V, 0.1A) |
| 文件： | 总5页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3541
Transistor
Small switching (30V, 0.1A)
2SK3541
!External dimensions (Units : mm)
!Applications
Interfacing, switching (30V, 100mA)
1.2
0.2 0.8 0.2
!Features
( )
2
1) Low on-resistance.
(3)
( )
1
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
0.15Max.
4) Easily designed drive circuits.
5) Easy to parallel.
(1) Gate
ROHM : VMT3
(2) Source
(3) Drain
Abbreviated symbol : KN
!Structure
Silicon N-channel
MOSFET
!Equivalent circuit
!Absolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
Limits
30
Unit
V
Drain
VDSS
GSS
V
20
V
Continuous
Pulsed
I
D
100
mA
mA
mA
mA
mW
°C
Drain current
1
∗
I
DP
400
Gate
Continuous
Pulsed
I
DR
100
Reverse drain
current
1
∗
I
DRP
400
∗ Gate
2
Protection
Diode
∗
P
D
150
Total power dissipation (Tc=25°C)
Source
Tch
150
Channel temperature
Tstg
−55~+150
°C
Storage temperature
∗A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
∗1 Pw≤10µs, Duty cycle<1%
∗2 With each pin mounted on the recommended lands.
2SK3541
Transistor
!Electrical characteristics (Ta=25°C)
Symbol Min.
Typ.
−
Max.
1
Unit
µA
V
Conditions
VGS= 20V, VDS=0V
Parameter
I
GSS
(BR)DSS
DSS
−
30
−
Gate-source leakage
V
−
−
I
D=10µA, VGS=0V
Drain-source breakdown voltage
I
−
1.0
1.5
8
µA
V
V
V
DS=30V, VGS=0V
Zero gate voltage drain curren
t
V
GS(th)
DS(on)
DS(on)
0.8
−
−
DS=3V, I =100µA
D
Gate threshold voltage
R
R
5
Ω
I
I
I
D
D
D
=10mA, VGS=4V
=1mA, VGS=2.5V
=10mA, VDS=3V
DS=5V
Static drain-source on-state
resistance
−
7
13
−
Ω
|Yfs
|
20
−
−
ms
pF
pF
pF
ns
ns
ns
ns
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
iss
oss
rss
d(on)
13
9
−
V
V
C
−
−
GS=0V
C
−
4
−
f=1MHz
t
−
15
35
80
80
−
I
D=10mA, VDD 5V
t
r
−
−
VGS=5V
t
d(off)
−
−
Turn-off delay time
Fall time
RL=500Ω
t
r
−
−
RGS=10Ω
!Packaging specifications
Package
Taping
T2R
Code
Type
Basic ordering unit
(pieces)
8000
2SK3541
!Electrical characteristic curves
0.15
200m
2
1.5
1
V
DS=3V
V
DS=3V
4V
100m
50m
I
D
=0.1mA
Pulsed
3V
Ta=25°C
Pulsed
Pulsed
3.5V
20m
10m
5m
0.1
2.5V
2m
1m
Ta=125°C
0.05
75°C
25°C
−25°C
0.5
0
2V
0.5m
0.2m
0.1m
V
2
GS=1.5V
0
0
1
3
4
5
−50 −25
0
25
50
75 100 125 150
3
0
1
2
4
DRAIN-SOURCE VOLTAGE : VDS (V)
CHANNEL TEMPERATURE : Tch (°C)
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Typical output characteristics
Fig.2 Typical transfer characteristics
Fig.3 Gate threshold voltage vs.
channel temperature
2SK3541
Transistor
50
50
15
10
5
V
GS=4V
Ta=25°C
Pulsed
V
GS=2.5V
Pulsed
Pulsed
Ta=125°C
75°C
Ta=125°C
20
10
5
20
10
5
25°C
75°C
25°C
−25°C
−25°C
2
2
I
D=0.1A
1
1
I
D=0.05A
0.5
0.001 0.002
0.5
0.001 0.002
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0
5
10
15
20
0.005
0.01
0.02
0.05
0.1
0.2
0.5
DRAIN CURRENT : I
D
(A)
GATE-SOURCE VOLTAGE : VGS (V)
DRAIN CURRENT : ID (A)
Fig.4 Static drain-source on-state
resistance vs. drain current (Ι)
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
Fig.5 Static drain-source on-state
resistance vs. drain current (ΙΙ)
9
8
7
0.5
0.2
200m
V
GS=4V
V
DS=3V
V
GS=0V
Pulsed
Pulsed
Pulsed
100m
50m
Ta=−25°C
25°C
I
D
=100mA
0.1
20m
75°C
6
5
4
3
2
1
Ta=125°C
0.05
125°C
10m
5m
ID=50mA
75°C
25°C
−25°C
0.02
0.01
2m
1m
0.005
0.5m
0.002
0.001
0.2m
0.1m
0
−50 −25
0
25
50
75 100 125 150
0.0001 0.0002
0.0005 0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0
0.5
1
1.5
CHANNEL TEMPERATURE : Tch (°C)
DRAIN CURRENT : ID (A)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
Fig.8 Forward transfer
Fig.9 Reverse drain current vs.
admittance vs. drain current
source-drain voltage (Ι)
200m
50
1000
500
Ta=25°C
Ta=25°C
Pulsed
Ta=25°C
t
f
V
DD=5V
GS=5V
f=1MH
Z
100m
50m
V
V
GS=0V
t
d(off)
20
10
5
RG=10Ω
Pulsed
200
100
Ciss
20m
10m
5m
V
GS=4V
0V
50
Coss
t
r
2m
1m
20
10
5
t
d(on)
Crss
2
0.5m
1
0.2m
0.1m
0.5
0.1 0.2
2
0.5
1
2
5
10
20
50
0.1 0.2
0.5
1
2
5
10 20 50
100
0
0.5
1
1.5
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (mA)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.11 Typical capacitance vs.
drain-source voltage
Fig.12 Switching characteristics
Fig.10 Reverse drain current vs.
(See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
source-drain voltage (ΙΙ)
2SK3541
Transistor
!Switching characteristics measurement circuit
Pulse width
90%
50%
10%
50%
V
GS
V
V
GS
DS
I
D
V
DS
RL
D.U.T.
10%
RG
10%
90%
V
DD
90%
t
d (on)
tr
t
f
t
d (off)
t
off
t
on
Fig.13 Switching time measurement circuit
Fig.14 Switching time waveforms
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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