BD6550G_11 [ROHM]
Silicon Monolithic Integrated Circuit; 硅单片集成电路
| 型号： | BD6550G_11 |
| 厂家： | 
ROHM |
| 描述： | Silicon Monolithic Integrated Circuit |
| 文件： | 总5页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1/4
STRUCTURE
PRODUCT
Silicon Monolithic Integrated Circuit
CONSTANT VOLTAGE AND CONSTANT CURRENT
CONTROLLER FOR BATTERY CHARGERS AND ADAPTORS
TYPE
ＢＤ６５５０Ｇ
FEATURE
・ Constant current and constant voltage control
・ High accuracy reference voltage: 1.21V±1%
・ An accuracy for current-detecting voltage: ±2%
○ ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
Symbol
Limit
Unit
VMAX
VICTMAX
Pd
Power Supply Voltage
-0.3 ～ 14
-0.3 ～ VCC
675 *1
V
V
ICT Pin Maximum Voltage
Power Dissipation
mW
℃
Operating Temperature Range
Storage Temperature Range
Topr
0 ～ +85
Tstg
-55 ～ +150
℃
*1 Pd derated at 5.4mW/℃ for temperature above Ta=25℃,
mounted on 70mm×70mm×1.6mm glass-epoxy PCB.
○ OPERATING CONDITIONS (Ta=0～+85℃)
PARAMETER
Symbol
VCC
Limit
Unit
Power Supply Voltage
2.5～12
V
REV. B
2/4
○ ELECTRICAL CHARACTERSTICS (Ta=25℃ and Vcc=+5V (unless otherwise specified))
Limit
PARAMETER
Symbol
UNIT
Conditions
MIN. TYP. MAX.
【Total Current Consumption】
Total Supply Current - not taking the output
sinking current into account
ICC
-
0.9
2
mA
【Voltage Control Loop】
Transconduction Gain(VCT).
Sink Current Only
GMV
1
4.0
-
mA/mV
*1
1.198
1.21
1.222
Ta=25℃
Voltage Control Loop Reference at 1.5mA
sinking current
VREF
Ibv
V
1.186
-
1.21
50
1.234
-
0 < Ta < 85℃ *1
Input Bias Current(VCT)
【Current Control Loop】
Transconduction Gain(ICT).
Sink Current Only
nA
*1
GMI
1.5
4.0
-
mA/mV
*1
196
192
-
200
200
25
204
208
-
Ta=25℃
Current Control Loop Reference at 2.5mA
sinking current
VSE
Ibi
mV
0 < Ta < 85℃ *1
Current out of pin ICT at -200mV
μA
【Output Stage】
Low output voltage at 10mA sinking current
Output Short Circuit Current, Output to VCC,
Sink Current Only
VOL
IOS
-
-
200
20
-
mV
mA
VSE=0V, ICT=-0.3V
OUT=VCC,
VSE=0V, ICT=-0.3V
50
● This product is not designed for protection against radio active rays.
*1 Design Guarantee
○ PACKEGE, MARKING SPECIFICATION
SSOP6 (UNIT:mm)
REV. B
3/4
○ BLOCK DIAGRAM
VCC
6
1.21V
+
-
3 OUT
1 VCT
VOLTAGE
REFERENCE
+
-
2
GND
4
5
ICT
VSE
○ PIN No. & PIN NAME
PIN No.
PIN Name
VCT
Function
1
2
3
4
5
6
Input Pin of the Voltage Control Loop
Ground Line. 0V Reference For All Voltages
Output Pin. Sinking Current Only
Input Pin of the Current Control Loop(+)
Input Pin of the Current Control Loop(-)
Positive Power Supply Line
GND
OUT
ICT
VSE
VCC
REV. B
4/4
○ Operation Notes
1) Absolute maximum ratings
Use of the IC in excess of absolute maximum ratings such as the applied voltage or operating temperature range may
result in IC deterioration or damage. Assumptions should not be made regarding the state of the IC (short mode or
open mode) when such damage is suffered. A physical safety measure such as a fuse should be implemented when
use of the IC in a special mode where the absolute maximum ratings may be exceeded is anticipated.
2) GND potential
Ensure a minimum GND pin potential in all operating conditions. In addition, ensure that no pins other than the GND
pin carry a voltage lower than or equal to the GND pin, including during actual transient phenomena. As an exception,
the circuit design allows voltages up to -0.3 V to be applied to the ICT pin.
3) Setting of heat
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating
conditions.
4) Pin short and mistake fitting
Use caution when orienting and positioning the IC for mounting on printed circuit boards. Improper mounting may result
in damage to the IC. Shorts between output pins or between output pins and the power supply and GND pin caused by
the presence of a foreign object may result in damage to the IC.
5) Actions in strong magnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to
malfunction.
6) Mutual impedance
Power supply and ground wiring should reflect consideration of the need to lower mutual impedance and minimize
ripple as much as possible (by making wiring as short and thick as possible or rejecting ripple by incorporating
inductance and capacitance).
7) Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a
variety of parasitic elements. For example, when a resistor and transistor are connected to pins as shown in Fig. 19,
the P/N junction functions as a parasitic diode when GND > (Pin A) for the resistor or GND > (Pin B) for the transistor
(NPN). Similarly, when GND > (Pin B) for the transistor (NPN), the parasitic diode described above combines with the
N layer of other elements to operate as a parasitic NPN transistor. The formation of parasitic elements as a result of the
relationships of the potentials of different pins is an inevitable result of the IC's architecture. The operation of parasitic
elements can cause interference with circuit operation as well as IC malfunction and damage. For these reasons, it is
necessary to use caution so that the IC is not used in a way that will trigger the operation of parasitic elements, such as
by the application of voltages lower than the GND (P substrate) voltage to I/O pins.
Although the circuit design allows voltages up to -0.3 V to be applied to the ICT pin, voltages lower than this may cause
the behavior described above. Use caution when designing the circuit.
Transistor (NPN)
B
C
Resistor
(Pin A)
(Pin B)
E
GND
N
P
P+
P
P+
P+
P+
N
N
N
N
N
N
P substrate
P substrate
GND
GND
Parasitic elements
(Pin A)
Parasitic elements
(Pin B)
C
B
E
Parasitic elements
GND
GND
Other Adjacent Elements
Parasitic elements
Simplified structure of a Monolithic IC
REV. B
Notice
N o t e s
No copying or reproduction of this document, in part or in whole, is permitted without the
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
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The Products specified in this document are not designed to be radiation tolerant.
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Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
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R1120
A
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