BD6607KN_11 [ROHM]
Silicon Monolithic Integrated Circuit; 硅单片集成电路
| 型号： | BD6607KN_11 |
| 厂家： | 
ROHM |
| 描述： | Silicon Monolithic Integrated Circuit |
| 文件： | 总5页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Structure
Silicon Monolithic Integrated Circuit
System Motor Driver for Portable MD
BD6607KN
Product Series
Type
Features
・Operates at low power supply voltage (VCC=1.8V min.)
・Incorporates two, 3-phase half-bridge driver circuits (low ON resistance power DMOS 0.85Ω typ.)
・Incorporates two H-bridge driver circuits (low ON resistance power DMOS 0.70Ω typ.)
・Incorporates two comparator circuits for motor BEMF voltage detection
・Incorporates a standby circuit (current at standby 0μA)
・Incorporates thermal shutdown circuit
○Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
VCC
VM
Limits
7
Unit
V
Power supply voltage for control circuit
Power supply voltage for driver
Power supply voltage for pre-driver circuit
Input voltage
7
V
VG
15
V
VIN
0～VCC
*1000
**1250
-25～+75
-55～+150
150
V
Driver output current
Iomax.
Pd
mA
mW
℃
℃
℃
Power dissipation
Operating temperature range
Storage temperature range
Junction temperature
Topr
Tstg
Tjmax
＊Must not exceed Pd or ASO, Tjmax=150℃.
＊＊Reduced by 10mW/°C over Ta=25°C, when mounted on a glass epoxy board (70mmx70mmx1.6mm).
○Operating conditions (Ta= -25 ～ +75°C)
Parameter
Symbol
VCC
VM
Min.
1.8
0.9
VM+5
0
Typ.
Max.
5.0
Unit
V
Power supply voltage for control circuit
Power supply voltage for driver
2.4
1.2
5.0
V
Power supply voltage for pre-driver circuit
Input voltage for logic signal *1
VG
-
-
-
12
V
VIL
VCC
VM
V
Input voltage for analog signal *2
VIA
0
V
*1 : 1 STALL, ST1, ST2, FI1, RI1, FI2, RI2, UI1, VI1, WI1, PWM1, UI2, VI2, WI2, PWM2 pins
*2 : CPUI1, CPUVI1, CPWI1, CPCOM1, CPUI2, CPVI2, CPWI2, CPCOM2 pins
This product described in this specification is not judged whether it applies to COCOM regulations.
Please confirm in case of export.
This product is not designed for protection against radioactive rays.
REV. C
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○Electrical characteristics
(Unless otherwise specified, Ta=25°C, VCC=2.4V, VM=1.2V, VG=6.8V)
Limit
Parameter
Symbol
Unit
Conditions
STALL=L(*1)
Min.
Typ.
Max.
Control circuit current at standby
Driver power supply current at standby
Pre-driver power supply current at standby
Power supply current of control circuit
at no signal
ICCST
IMST
IGST
-
-
-
-
-
-
1
1
1
μA
μA
μA
STALL=L(*1)
STALL=L(*1)
ICCN
IGN
ICC
IG
-
-
-
-
4
100
8
10
160
15
μA
μA
μA
mA
STALL=L(*1)
Power supply current of pre-driver
at no signal
STALL=L(*1)
Power supply current of control circuit
at operation
STALL=H,ST1=ST2=L(*2)
STALL=H,ST1=ST2=L(*2)
Power supply current of pre-driver
at operation
0.7
0.95
～Logic input～
VCC
x0.8
Logic H level input voltage
Logic L level input voltage
VIH
VIL
-
-
-
V
V
VCC
x0.2
1
-
Logic H level input current
IIH
IIL
-
-
-
μA
μA
FI, RI, UI, VI, WI, PWM pins
FI, RI, UI, VI, WI, PWM pins
Logic L level input current
-1
-
ST pin pull-down resistance
～BEMF voltage detection comparator～
Comparator input offset voltage
Comparator input current
RST
0.33
0.6
1.0
MΩ
applied to STALL, ST1,ST2 pins
VOS
ICP
-5
-1
-
-
5
1
mV
μA
VCC
x0.8
Comparator H level output voltage
VOH
VOL
-
-
-
V
V
Isource=500μA
VCC
x0.2
Comparator L level output voltage
～Power MOS～
-
Isink=500A
upper and lower ON resistance
in total
H-bridge output ON resistance
RON1,2
-
-
0.7
1.30
1.55
Ω
Ω
upper and lower ON resistance
in total
Half-bridge output ON resistance
RONU,V,W
0.85
＊1 : Each input pin=L or H
＊2 : PWM1, PWM2 pins=176.4kHz, each H-bridge input pin= 88.2kHz, each 3-phase half-bridge input pin=100Hz
REV. C
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○ Package outlines
Type
BD6607KN
Lot No.
○Pin No./Pin name
NO.
1
Pin name
WI1
NO.
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
Pin name
FO2
2
PGNDW1
WO1
PGND2
RO2
UQFN64 outlines (Unit：mm)
3
4
ST1
RO2
5
VMVW1
VO1
VMR2
VMU2
UO2
○Block diagram
6
7
VO1
PGNDW2(47)
PGNDUV2(41)
8
PGNDUV1
UO1
UO2
VCC(57)
9
PGNDUV2
VO2
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
UO1
STALL(55)
UO2(39,40)
VMU1
VMR1
RO1
VO2
ST2(45)
ST1(4)
VMU2(38)
VMVW2
ST2
VMVW2(44)
PGND2(34)
FI2(30)
VO2(42,43)
RO1
WO2
FO2(32,33)
WO2(46)
PGND1
FO1
PGNDW2
WI2
+
CPUO2(52)
－
VMF2(31)
VMR2(37)
BEMF COMP2
+
CPVO2(53)
CPWO2(54)
－
FO1
VI2
RO2(35,36)
RI2(29)
+
VMF1
FI1
UI2
－
COM2(28)
PWM2
CPUO2
CPVO2
CPWO2
STALL
GND
CPUI2(27)
CPVI2(26)
CPWI2(25)
RI1
VG(58)
COM1
CPUI1
CPVI1
CPWI1
CPWI2
CPVI2
CPUI2
COM2
RI2
PGNDW1(2)
PGND1(15)
FI1(19)
PGNDUV1(8)
FO1(16,17)
UO1(9,10)
VMF1(18)
VMR1(12)
VMU1(11)
VMVW1(5)
VO1(6,7)
VCC
VG
RO1(13,14)
RI1(20)
CPWO1
CPVO1
CPUO1
PWM1
UI1
WO1(3)
BEMF COMP1
+
CPUO1(61)
－
+
FI2
CPVO1(60)
CPWO1(59)
－
VMF2
FO2
+
－
VI1
REV. C
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○Notes on the use
(1) Absolute maximum ratings
If the input voltage or the operating temperature range exceeds absolute maximum ratings, IC may be damaged. No
destruction mode (e.g., short-circuiting or open) can be specified in that case. If such special mode as will exceed
absolute maximum ratings is assumed, take the physical safety measures, such as a fuse.
(2) Power supply lines
The regenerated current by BEMF of the motor will return. Therefore, take measures, such as the insertion of a capacitor
between the power supply and GND as the pass of the regenerated current. Determine the capacitance in full
consideration of all the characteristics of the electrolytic capacitor, because the electrolytic capacitor may loose some
capacitance at low temperatures. If the connected power supply does not have sufficient current absorption capacity,
regenerative current will cause the voltage of the power supply line to rise, which the product and its peripheral circuit
may exceed the absolute maximum ratings. It is recommended to implement physical safety measures such as the
insertion of a voltage clamp diode between the power supply and GND pins.
(3) Ground potential
Ensure a minimum GND pin potential in all operating conditions.
(4) Design for heat
Use the design for heat that allows for a sufficient margin in light of the power dissipation (Pd) in actual using conditions.
(5) Operation in strong magnetic field
Use caution when using the IC in the strong magnetic field as doing so may cause the IC to malfunction.
(6) ASO
When using the IC, make settings so that the output transistors for the motor will not be used under conditions in excess
of the absolute maximum ratings and ASO.
(7) Thermal shutdown circuit
This IC incorporates thermal shutdown circuit(TSD circuit).
When the chip temperature becomes the one shown in below, TSD circuit operates and makes the coil output to motor
open. It is designed to shut the IC off from runaway thermal operation. It is not designed to protect the IC or guarantee
its operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the
operation of this circuit is assumed.
TSD ON temperature[℃] (typ.)
Hysteresis temperature [℃] (typ.)
175
25
(8) Ground wiring pattern
When having both small signal and large current GND, it is recommended to isolate the two GND patterns, placing a
single ground point at the application's reference point so that the pattern wiring resistance and voltage variations caused
by large currents do not cause voltage variations of the small signal GND. Be careful not to change the GND wiring
pattern of any external parts, either.
REV. C
Notice
N o t e s
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The technical information specified herein is intended only to show the typical functions of and
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