BD7F200UEFJ-LB (新产品) [ROHM]

This product guarantees long time supply availability in the industrial instrumentation market.BD7F200 is an optocoupler-less Isolated Flyback Converter. An optocoupler or the tertiary winding feedback circuit which was needed to obtain a stable output voltage isolated by a transformer in the conventional application becomes unnecessary, thus, the number of parts is reduced drastically, producing a small-sized and high-reliability application isolated type power supply. Furthermore, a highly by the use of the Original Adapted-Type ON-Time Control Technology, it makes the external phase compensation parts become unnecessary, therefore a highly efficient isolated type power supply application can easily be produced.;


型号：	BD7F200UEFJ-LB (新产品)
厂家：	ROHM
描述：	This product guarantees long time supply availability in the industrial instrumentation market.BD7F200 is an optocoupler-less Isolated Flyback Converter. An optocoupler or the tertiary winding feedback circuit which was needed to obtain a stable output voltage isolated by a transformer in the conventional application becomes unnecessary, thus, the number of parts is reduced drastically, producing a small-sized and high-reliability application isolated type power supply. Furthermore, a highly by the use of the Original Adapted-Type ON-Time Control Technology, it makes the external phase compensation parts become unnecessary, therefore a highly efficient isolated type power supply application can easily be produced.
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Datasheet

Optocoupler-less

Isolated Flyback Converter

BD7F200HFN-LB BD7F200EFJ-LB

General Description

Key Specifications

This product guarantees long time supply availability in

the industrial instrumentation market.

Supply Voltage of Operation:

SW Terminal Operating Voltage:

Over Current Limit:

Switching Frequency:

Reference Voltage Accuracy:

Quiescent Current:

8V to 40V

50V (Max)

2.75A (Typ)

400kHz (Typ)

±1.5% (Typ)

0µA (Typ)

BD7F200 is an optocoupler-less Isolated Flyback

Converter. An optocoupler or the tertiary winding

feedback circuit which was needed to obtain a stable

output voltage isolated by

transformer in the

Operating Current:

2mA (Typ)

conventional application becomes unnecessary, thus,

the number of parts is reduced drastically, producing a

small-sized and high-reliability application isolated type

power supply.

Junction Temperature of Operation: -40°C to +125°C

Packages

W(Typ)

D(Typ)

H(Max)

HSON8

2.90mm x 3.00mm x 0.60mm

4.90mm x 6.00mm x 1.00mm

HTSOP-J8

Furthermore, a highly by the use of the Original

Adapted-Type ON-Time Control Technology, it makes

the external phase compensation parts become

unnecessary, therefore a highly efficient isolated type

power supply application can easily be produced.

Features

 Guaranteed long time supply availability for

Industrial Applications.

 No need for an optocoupler or a transformer tertiary

winding.

The output voltage can be set by two external

resistors and the transformer turns ratio.

 Uses Original Adapted Type ON-Time Control

Technology.

High-speed load response is realized and external

phase compensation parts are unnecessary.

 Fixed switching frequency and low output ripple

 Highly efficient light load mode available (PFM

operation)

HTSOP-J8

HSON8

 Shutdown / Enable Control

 Built-in N-Channel MOSFET

 Soft start function

 Output load compensation function

 Protection functions:

VIN Under Voltage Lock-Out (VIN UVLO)

Over Current Protection (OCP)

Thermal Shutdown Protection (TSD)

Application

 Industrial equipment Isolated Power Supply

O Product structure : silicon monolithic integrated circuit O This product has no designed protection against radioactive rays

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Typical Application Circuit

VOUT+

VOUT-

VIN

SDX/EN

BD7F200HFN-LB

COMP

AGND REF PGND

Pin Configuration

(TOP VIEW)

AGND

VIN

SDX/EN

PGND

COMP

REF

Pin Descriptions

Pin No.

Pin Name

Function

HSON8

HTSOP-J8

AGND

SDX/EN

COMP

REF

Analog system GND

Shutdown/Enable control

Load Current Compensation of the output voltage set up

Output voltage setup

PGND

Power system GND

Switching Output

VIN

Power supply

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Block Diagram

VIN

INTERNAL

REGULATOR

VREF

COMPARATOR

VREF

N-Channel

MOSFET

ADAPTIVE

ON-TIME

Shutdown

DRIVER

Enable

CONTROLLER

SOFT

SDX/EN

START

VIN UVLO

TSD

OCP

Current Monitor

PGND

LOAD

COMPENSATION

REF

AGND

COMP

Description of Blocks

1. INTERNAL REGULATOR

This is the regulator block for internal circuits.

Also includes a reference voltage generating block (VREF).

This block is in the shutdown state when the SDX/EN terminal is below 0.9V (Typ).

2. VIN UVLO

This is the input low-voltage-protection block.

If the power supply input voltage, VIN, falls to below 6.2V (Typ), it will be detected and this block will be in the protection

state and the SW terminal becomes Hi-Z.

When the power supply input voltage (VIN) rises to 6.9V (Typ), it automatically recovers thorough the soft start.

(Hysteresis voltage: 0.7V (Typ).)

3. SOFT START

When the SDX/EN terminal is in the enable state with more than 2.0V (Typ), this block prevents inrush current and

overshoot in the rising of the output voltage by making the reference voltage of the COMPARATOR block rise slowly from

0V to VREF voltage.

The default soft start time, tSS, is designed to be 6ms (Typ) internally.

The min off time is 750ns (Typ) when the output voltage is below 50% of the set voltage.

4. COMPARATOR

This is the block which compares the reference voltage VREF with the REF terminal voltage which is the feedback

voltage of the SW terminal voltage.

Since the feedback loop is structured by a comparator is established, it has excellent response to load fluctuation.

5. ADAPTIVE ON-TIME CONTROLLER

This is the block corresponding to the original adapted type ON-Time control technology.

Switching frequency is fixed at 400kHz (Typ) under PWM Control when the load is stable.

Under On-Time Control, when the load varies, fast load response is enabled by changing the switching frequency.

During light load, the highly efficient PFM will operate and the self-power dissipation is suppressed by decreasing the

switching frequency.

6. DRIVER

This is the block which drives the built-in N-Channel MOSFET.

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Description of Blocks - continued

7. LOAD COMPENSATION

This is the block which compensates the output voltage regulation by VF characteristic fluctuation of the secondary side

output diode according to the load current.

The current which flows into the built-in N-Channel MOSFET is monitored, and the current according to the compensation

quantity and the time constant which are determined by the external resistor and the capacitor of the COMP terminal is

drawn from the REF terminal. The output voltage rises and is rectified when feedback current which flows into the external

resistor of the REF terminal decreases and the REF terminal voltage falls.

8. TSD

This is the temperature protection block.

If the chip’s junction temperature, Tj, inside the IC is above 175°C (Typ), it will be detected and this block will be in the

protection state and the SW terminal becomes Hi-Z.

If Tj falls to below 150°C (Typ), it will return automatically through soft start.

9. OCP

This is the over-current protection block.

If the peak current during the ON-Time of the built-in N-Channel MOSFET reaches 2.75A (Typ), it will be detected and the

N-Channel MOSFET is turned OFF.

If output voltage goes to 50% or less of the setting voltage, the peak detection current of OCP will be controlled by 1.6A

(Typ).The min off time is 1.5μs (Typ) when the OCP is operated under the condition where the output voltage is 50% of

the set voltage.

Absolute Maximum Ratings (Ta = 25 °C)

Rating

Parameter

Symbol

Unit

BD7F200HFN-LB

BD7F200EFJ-LB

VIN Input Power Voltage ^{(Note 1)}

SW Terminal Voltage

VIN

VSW

VIN

SDX/EN Terminal Voltage

FB Terminal Voltage

VSDX/EN

VFB

VIN-0.3V to VIN

REF Terminal Voltage

COMP Terminal Voltage

Power Dissipation

VREF

VCOMP

1.75 ^{(Note 2)}

3.75 ^{(Note 3)}

°C

Storage Temperature Range

Tstg

-55 to +150

150

Maximum Junction Temperature

Tjmax

(Note 1) Not to exceed Power Dissipation (Pd).

(Note 2) Reduced by 14.0mW/°C for temperatures above 25°C (when mounted on a one-layer glass-epoxy board with 70mm × 70mm × 1.6mm dimension,

65% copper foil density)

(Note 3) Reduced by 30.0mW/°C for temperatures above 25°C (when mounted on four-layer glass-epoxy board with 70mm × 70mm × 1.6mm dimension.)

Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit

between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated

over the absolute maximum ratings.

Recommended Operating Conditions

Limit

Parameter

Symbol

Unit

Min

Typ

Max

VIN Input Power Voltage

SW Terminal Voltage

Junction Temperature ^(Note4)

VIN

VSW

-40

+125

°C

(Note 4) Life time is derated at junction temperature greater than 125°C.

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Electrical Characteristics (Unless otherwise specified Ta = 25°C, VIN = 24V, and VSDX/EN = 2.5V.)

Limit

Parameter

Symbol

Unit

Conditions

Min

Typ

Max

Power Supply

VSDX/EN = 0V

VSDX/EN = 2.5V

VREF = 2V (at PFM operation)

Quiescent Current

Operating Current

IST

µA

ICC

UVLO Detection Voltage

UVLO Hysteresis Voltage

SDX/EN Control

VUVLO

5.7

0.6

6.2

0.7

6.7

0.8

VIN falling

VUVLO_HYS

Shutdown Voltage

Enable Voltage

VSDX

VEN

0.3

1.9

0.15

0.9

2.0

0.2

1.5

2.1

0.25

VSDX/EN rising

VSDX/EN=2V

Enable Hysteresis Voltage

SDX/EN Input Current

Reference Voltage

Switch Characteristics

ON-Resistance

VEN_HYS

ISDX/EN

µA

VREF

0.768

0.78

0.792

RON

ILIMIT

0.5

2.75

400

350

300

Ω

Between SW - PGND terminals

At PWM operation (Duty=40%)

Over Current Limit

Switching Frequency

Minimum ON Time

Minimum OFF Time

Maximum OFF Time

Soft Start Time

2.2

3.3

fSW

kHz

tON_MIN

tOFF_MIN

tOFF_MAX

tSS

µs

0V to (VREF×90%)

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Typical Performance Curves

Restriction by the SW

terminal voltage 50V (Max)

Restriction by the

current limit 2.2A (Min)

Maximum output power is restricted in general by a current

limit and the maximum operating voltage of SW terminal.

Furthermore, it also changes with the characteristics of

external parts (Transformer, Schottky barrier diode,

Snubber circuit, etc.).

10 15 20 25 30 35 40 45 50

VIN Voltage [V]

Figure 1. Maximum Output Power vs VIN Voltage

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Typical Performance Curves

0.9

0.8

0.7

0.6

0.5

0.4

2.5

1.5

SDX/EN=0V

REF=2V

COMP=0V

0.3

0.2

0.1

0.5

VIN Voltage [V]

Figure 2. Quiescent Current vs VIN Voltage

Figure 3. Operating Current vs VIN Voltage

500

450

400

350

300

250

200

150

100

10 15

20 25

30 35

SDX/EN Voltage [V]

Duty [%]

Figure 4. SDX/EN Input Current vs SDX/EN Voltage

Figure 5. Switching Frequency vs Duty

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Typical Performance Curves

5.25

5.2

100

Withload

compensation

5.15

5.1

RCOMP=12kΩ

5.05

4.95

4.9

No load

compensation

4.85

4.8

4.75

500

1000

1500

2000

500

1000

1500

2000

Load Current[mA]

Figure 7. Output Voltage vs Load Current

(24V Input, 5V Output)

Figure 6. Efficiency vs Load Current

(24V Input, 5V Output)

4.95

4.9

4.85

4.8

OUT: 1A/Div

4.75

4.7

VOUT: 500mV/Div

IOUT=2A

No load

compensation

4.65

4.6

4.55

4.5

-50

100

150

Time: 1ms/Div

Ambient Temperature [°C]

Figure 8. Output Voltage vs Ambient Temperature

(24V Input, 5V Output)

Figure 9. Load Transient Response

(24V Input, 5V Output, with Load Compensation,

and IOUT = 600mA <-> 2A)

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Typical Performance Curves

VIN: 20V/Div

SDX/EN: 2V/Div

VOUT: 2V/Div

SDX/EN: 2V/Div

VOUT: 2V/Div

SW: 20V/Div

Time: 4ms/Div

Figure 11. Shutdown Waveforms (SDX/EN control)

(24V Input, 5V Output, SDX/EN=2.5V->0V)

Figure 10. Start Up Wave Forms(SDX/EN control)

(24V Input, 5V Output, SDX/EN=0V->2.5V)

VIN: 20V/Div

SDX/EN: 2V/Div

VOUT: 2V/Div

SDX/EN: 2V/Div

VOUT: 2V/Div

SW: 20V/Div

Time: 4ms/Div

Figure 12. Start Up Wave Forms(VIN control)

Figure 13. Shutdown Waveforms(VIN control)

(24V Input, 0V Output, VIN=0V->24V, R1=1MΩ, R2=120kΩ)

(24V Input, 5V Output, VIN=24V->0V, R1=1MΩ, R2=120kΩ)

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Application Examples

Exercise caution with the actual system since the characteristic changes with the board layout and the types of external parts

mounted, and etc.

Figure 14. 24V Input, 5V Output

Table1. Recommended Transformers

Target Applications

Size (W×L×H)

Part Number

NP : NS

Vendor

[mm]

[μH]

VIN [V]

VOUT [V]

IOUT [A]

CEP1311D-2405051R-10

13.5×20.0×12.5

3 : 1

Sumida Electric

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Application Information

1. Outline Operation

This product is an isolated type flyback converter without an optocoupler. An optocoupler or a transformer’s tertiary winding

feedback circuit which was needed to obtain a stable output voltage isolated by a transformer in the conventional

application becomes unnecessary, thus, the number of parts is reduced drastically, producing a small-sized and

high-reliability application isolated type power supply.

Furthermore, a highly efficient isolated type power supply application can easily be produced the use of the Original

Adapted-Type ON-Time Control Technology which eliminates the need for external phase compensation parts.

The off time is determined by comparing the reference voltage inside the IC with the information which was obtained by the

feedback of the secondary output voltage through primary flyback voltage.

Adapted-type ON time control,

(1) Switching frequency is fixed at 400kHz (Typ) for PWM operation when the load stabilizes.

(2) During load current fluctuation, the ON-Time Control will operate and the switching frequency will change, thus a

high-speed load response is obtained.

(3) During light load, high efficiency is obtained because the switching frequency decreases.

2. Timing Chart

(1)Start-up/Shut-down

Output voltage gradually turns ON through the soft start function when SDX/EN terminal rises to above 2.0V(Typ) (Enable

state) .When SDX/EN terminal falls below 1.8V (Typ), output voltage turns OFF (Disable state).

Figure 15. Start-up/Shut-down Timing Chart

(Note 1) In the control system of this IC, it has to be operated where duty is below 50%. When turning ON/OFF the IC,

control the SDX/EN terminal as enable/disable under the condition where VIN fulfills below equation.

N _P

ꢀ ꢀ

V_IN







V_OUTV_F



[V]

N _S

ꢀ ꢀ where:

ꢀ ꢀ

VIN is the VIN input power voltage

ꢀ ꢀ

Np is the number of turns in the transformer primary side

Ns is the number of turns in the transformer secondary side

VOUT is the output voltage

VF is the forward voltage of the output diode in the secondary side

If SDX/EN terminal is connected to VIN terminal, duty could be more than 50% and unexpected output voltage might occur

when turning ON/OFF. Please refer to ”8. Enable Voltage” on page 15 of the application information for the enable control

with VIN terminal.

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(2) VIN Under Voltage Lock-Out (VIN UVLO)

When the input voltage (VIN) falls below 6.2V (Typ), it will be detected, followed by SW terminal becomes Hi-Z then output

turns OFF.

When the input voltage (VIN) rises to above 6.9V (Typ), it automatically recovers thorough the soft start.

(Hysteresis voltage: 0.7V (Typ))

VIN UVLO

OFF

VIN UVLO

6.9V

VIN

6.2V

tss

VOUT

VOUT×0.9

Figure 16. VIN UVLO Timing Chart

(3) Thermal Shutdown Protection (TSD)

When the internal chip (Junction) temperature exceeds Tj=175°C (Typ) ,it will be detected, followed by SW terminal

becomes Hi-Z, then output turns OFF.

When Tj decreases below 150°C (Typ), it automatically recovers through the Soft Start.

Note that the thermal shutdown circuit is designed to shutdown the IC from thermal runaway under abnormal circumstances

with the temperature exceeding Tjmax = 150°C. It is not designed to protect or guarantee the application set. Please refrain

from using this function as a protection design of the application set.

Figure 17. TSD Timing Chart

(4) Over Current Protection (OCP)

When the peak current reaches 2.75A (Typ) during the built-in N-channel MOSFET is ON, it will be detected, followed SW

terminal becomes Hi-Z, then N-channel MOSFET turns OFF. It is detected per switching cycle, and output voltage

decreases as ON duty is limited.

Figure 18. OCP Timing Chart

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3．Output Voltage

SW terminal voltage is higher than input voltage (VIN) when the built-in N-Channel MOSFET is OFF.

This primary flyback voltage (the gap between SW terminal voltage and VIN) contains the information of the secondary

output voltage.

SW terminal voltage can be calculated as follows:

N _P

N _S

ꢀ ꢀ

ꢀ

V_SWV_IN







V_OUTV_F I_SESR



[V]

ꢀ ꢀ

where:

VSWꢀ is the SW terminal voltage

ꢀ ꢀ ISꢀ is the transformer current in the secondary side

ꢀ ꢀ ESR is the total impedance in the secondary side

(transformer wirewound resistance of the secondary side,

PCB impedance, and etc.)

Figure 19. Control Block Diagram

This primary flyback voltage is converted to the current IRFB by RFB resistor. As FB terminal voltage almost equals to VIN

voltage due to the differential circuit of VIN, IRFB can be expressed by following equation:

V_SWV_FB

I_RFB



R_FB

N_P





V_OUTV_F I_SESR



N_S



[A]

R_FB

ꢀ ꢀ

where:

IRFBꢀ is the FB input current

VFBꢀ is the FB terminal voltage

RFB is the external resistance between the FB-SW terminals

REF terminal voltage can be expressed as follows since IRFB flows into RREF resister.

R_REFN _P

R_FBN _S

ꢀ ꢀ

ꢀ

V_REF







V_OUTV_F I_S ESR



[V]

ꢀ ꢀ

where:

VREF is the REF terminal voltage

RREF is the external resistance between the REF–AGND terminals

(The IC is designed on the assumption that this value is 3.9kΩ.)

The REF terminal voltage is input into the comparator and compared with the IC internal reference voltage (0.78V(Typ)).

Since the loop gain of the whole system is high, the REF terminal voltage can be equal to the reference voltage in the IC.

Therefore, the output voltage VOUT and the REF terminal voltage VREF are as follows:

R_FBN _S

R_REFN _P

V_OUT





V_REFV_F I_S ESR

[V]

That is, the output voltage VOUT can be set by the primary and secondary side turns ratio of the transformer, and the ratio of

the resistances RFB and RREF. VF and ESR cause an output voltage error.

The feedback resistor RFB can be expressed as follows from the relative quation with VOUT :

R_REFN _P

V_REFN _S

R_FB







V_OUTV_F I_SESR



[Ω]

V_SW

<60V

<50V

N _P

N _S

= Primary Flyback Voltage



V_OUT V_F I _S ESR



V_IN

Time

Figure 20. Primary Flyback Voltage

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4．Transformer

(1) Turns Ratio

Turns ration is the parameter which determines the output voltage, maximum output voltage, duty and SW terminal

voltage.The duty of a flyback converter can be expressed by the following equation:

N_P

N_S





V_OUTV_F



Duty 

N_P

N_S

V_IN







V_OUTV_F



Feedback voltage is monitored by the SW terminal and duty needs to be below 50% for the stable control. The minimum

duty will be 20% due to the limitation of the min ON time and the turns ratio needs to fulfill below conditions:

V_IN

N _P

V_IN





4 V_OUTV_F

N _SV_OUTV_F

(2) Primary Side Inductance

Flyback converter has the secondary pole from the primary inductance and the secondary output capacitor. Therefore,

for operational stability, selection of the primary side inductance value is important. In addition, as the primary

inductance influences the maximum load, please follow below conditions:

V_INT  Duty η

2  Duty V_IN

V_OUTV_F I_{OUT_MAX}π  f_SW



 L_P

[H]

I_{LIMIT _ MIN} Duty V_INη V_{OUT _MAX} I_{OUT _ MAX}





where:

ꢀ ꢀ LP is Primary side inductance

ꢀ ꢀ T is Switching output cycle

ηꢀ is Efficiency

ILIMIT_MINꢀ ꢀ is Minimum over current limit

IOUT_MAXꢀ is Maximum Load current

fSWꢀ is Switching frequency

ꢀ ꢀ

(3) Leakage Inductance

Transformer leakage inductance causes SW terminal ringing when the built-in N-Channel MOSFET turns OFF.

A snubber circuit is recommended in order to avoid the peak voltage of the ringing from exceeding the absolute

maximum rating (60V). Furthermore, after a voltage spike occurs, ringing is also caused. In order to prevent erroneous

detection of the secondary output voltage, the ringing must be converged within 250ns (Typ).

When the built-in N-Channel MOSFET turns ON, reverse spike voltage in the output diode is generated. Note that

this spike voltage must not exceed the diode rating voltage.

(4) Winding Resistance

Either primary or secondary winding resistance will reduce overall power efficiency. Moreover, secondary winding

resistance lowers the output voltage. Therefore, a transformer with smaller winding resistance is recommended.

(5) Saturation Current

The current in the primary transformer will not be transferred to the secondary if the core is saturated due to the

exceeded current. When the core is saturated, the inductance value decreases and the current drastically increases.

The current in the transformer should not exceed its rated saturation current.

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5．Output Capacitor

Selecting the secondary side output capacitor value is important for a stable operation.

Please select the value which fulfils below condition.



²

L_P

N_P

N_S

C_OUT 1.6 10 ^9



Duty

[F]









where:

COUT is Output capacitor

In addition, as secondary side output voltage rises through soft start time (tSS), please consider below equation when

choosing an output capacitor. Over current protection operates due to the inrush current especially when the capacitance

value is extremely large, thus, start-up failure might occur.





_{OUT _MAX}







N_P

N_S





t  I





1 Duty I





LIMIT _MIN









C_OUT





[F]

V_OUT

where:

tSS is Soft start time

6．Input Capacitor

Use ceramic capacitor for the input capacitor and place the input capacitor as close as possible to VIN terminal. Please

refer to the “PCB Layout Design Guidelines” on page 19 for the design as malfunctions might occur due to the layout pattern

or the position of the capacitor.

As for the capacitance value of the input capacitor, the ripple voltage of VIN terminal needs to be below 4% of the input

voltage.

And, make sure that ripple voltage is suppressed when load changes or start up.

7．Output Diode

Since the forward voltage VF of the output diode becomes an error factor in the output voltage, a Schottky barrier diode of

small VF is recommended. When selecting a diode, note that forward current must not exceed the rated values. And, when

the built-in N-Channel MOSFET is ON, the output diode or reverse voltage VR decrease is expressed by the following

equation:

N_S

N_P

V_RV_IN

V_OUT

[V]

Furthermore, ringing occurs to the reverse voltage VR when built-in N-Channel MOSFET turns ON. Please prevent the peak

voltage from exceeding the rated value of the output diode.

8．Enable Voltage

This IC is shut downed when SDX/EN voltage is below 0.9V (Typ).

If the voltage becomes above 2.0V (Typ) when SDX/EN terminal voltage is rising, IC goes to enable state and starts up.

(Hysteresis voltage: 0.2V (Typ))

Enable control with VIN terminal is done by dividing the VIN terminal and GND terminal with R1 and R2 resistors connecting

to SDX/EN terminal, as shown in Figure 25. The enable voltage when VIN is rising can be set with the following equation:

2.0V 



R₁R₂



V_{VIN_ENABLE}



[V]

R₂

1.8V 



R₁R₂

^{Disable voltage when VIN is falling ca}^{n be set with the following equation:}

V_{VIN_DISABLE}



[V]

R₂

Figure .21 Enable Control with VIN terminal

Since the control system of this IC needs to operate with 50% duty or less,

set disable voltage which fulfils the following equation:

N_P

N_S

V_{VIN_DISABLE}







V_OUTV_F



[V]

Please note that the clamping element inside the IC will turn ON and the inflow current occurs if the SDX/EN terminal

voltage rises above 5V.

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9．Minimum Load Current

To achieve a stable output voltage, the built-in N-Channel MOSFET senses and feeds back information on the output

voltage on the secondary side (which was isolated by the transformer) by using the SW terminal voltage on the primary side

(during OFF time). Meaning, the output will not be regulated in any case unless the built-in N-Channel MOSFET is in the

switching operation.

During light load, the switching operation uses minimum ON-Time. The output voltage may rise when there is a small load

current since it will supply the least amount of energy to the secondary side output. Therefore, it is necessary to add a

dummy resistor etc. to the output in order to secure minimum load current.

The required minimum load current (IOUT_MIN) can be expressed by:













V_IN

I_{OUT_MIN}7 .5 10 ^9

[A]

L_PV_OUT

10．Switching Frequency Changing Point

During light load, high efficiency is achieved by changing the switching frequency according to the load current.

The load current equation where the switching frequency begins to fall from the fixed 400kHz (Typ) is expressed following

equation:





²

ON _ MIN





400kHz V t



I_{OUT _ fsw} 

[A]





L_PV_OUT







where

tON_MIN is the Minimum On time

Figure 22. Switching Frequency vs Load Current Image

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11．Load Compensation

The relational expression of VOUT shows that VF and ESR are the factors leading to poor load regulation. For an application

which these factors cause the problem, an ideal load regulation can be obtained using load compensation function. Load

compensation mechanism is explained below. In the application wherein output voltage accuracy in particular is not

required, load compensation function can be cancelled by short-circuiting the COMP terminal to GND.

Figure 23. Load Compensation Functional Block Diagram

Figure 24. Monitor of the Amount of Load Compensation

(Continuous Mode)

VOUT voltage drop is compensated corresponding to the average current of the primary transformer current IP.

Since IP and IS have a relationship as indicated in the following equation, the load compensation value is determined by

assuming IS from IP and then adjusted by using external CR of the COMP terminal. The current of K・IP is injected to the

COMP terminal from the Current Monitor block in the Figure. 23 and then converted to VCOMP through RCOMP resistor

externally attached to COMP terminal.

K here is the compression magnification and indicated as 1/50k.

The upper limit of VCOMP operating voltage is limited in the internal circuit. Set RCOMP below 0.5V.

N_S

I_P

I_S

[A]

N_P

V_COMP K I_P



R_COMP0.5V

Steep changes in ICOMP may make the operation of the loop unstable.

Therefore, CCOMP is needed to stabilize VCOMP.

Recommended values of CCOMP are from 0.01µF to 0.1µF. By the addition of CCOMP, VCOMP becomes:

V_COMP K R_COMPI_{P_AVE}

I_{P_MIN}



I_{P_MAX}

t_ON

 K R_COMP



[V]

V_COMP

25kΩ

I_COMP



[V]

where:

IP_ave = Average transformer primary side current

RCOMP = External resistance for I_COMPadjustment

ꢀ

tON = ON-Time of built-in N-Channel MOSFET

How to decide the amount of load compensation and ICOMP setup by adjustment of RCOMP is explained next.

The feedback current which originally flows into RREF is partially lost by ICOMP due to the load compensation function. As a

result, in order to compensate this, the H level of VSW increases and recovers the dropped output voltage.

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While the load compensation function is not operating, VOUT, as described previously, will now be:

R_FBN_S

V_OUT





V_REFV_FI_{S_AVE}ESR

[V]

R_REF

where:

IS_AVE is the average transformer secondary side current

When ICOMP occurs, the load compensation function operates and VOUT becomes the following equation. The voltage

VOUT increases by ICOMP.

N_S

N_P

V_REF

R_REF

V_OUT



ꢂ

I_COMPꢁ R_FBV_FI_{S_AVE}ESR

[V]

K R_COMPI_{P _ AVE}

N_S

N_P



R_FB I_{S_AVE}R_VFI_{S_AVE}ESR

25kΩ

In order to remove VF and ESR by using ICOMP, the following equation is needed.

N_S

N_P

I_COMP



R_FBV_FI_{S_AVE}ESR

Next, linearity approximation of the change of VF to IS is carried out by RVF, and RCOMP which adjusts ICOMP from the

expression mentioned earlier is calculated.

K R_COMP



I_{P_AVE}

N_S

N_P



R_FB I_{S_AVE}R_VFI_{S_AVE}ESR

25kΩ



²

K R_COMP

25kΩ

N_S

N_P







R_FB R_VFESR







²

R_VFESR

K R_FB

N_P

N_S





R_COMP 25kΩ 



[Ω]





Although the setting of the theoretical value of RCOMP was shown, RVF, ESR, and RFB are dependent on the environment,

such as used parts and the mounting board.

Therefore, when determining the actual value of RCOMP, monitor VOUT in the used load current range and adjust RCOMP

accordingly.

Figure 25. Load Compensation Image

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PCB Layout Design Guidelines

The dotted line is the image of the wiring in another layer.

Figure 26. Application Circuit Block Diagram

PCB layout greatly affects the stable operation of the IC. Depending on the layout, the specs of the IC might not be secured

or IC might not operate correctly.

Please take the following points into consideration when designing the PCB layout.

1. Place input ceramic capacitors CIN1 and CIN2 as close as possible to VIN terminal on the same PCB surface with IC.

2. Shorten the thick line as short as possible with wide width pattern.

3. Place RREF as close as possible to REF terminal.

4. Place RFB as close as possible to FB terminal.

5. Place transformer T1 close to SW terminal and make the current loop indicated as an arrow (primary side) short. In

addition, make the pattern of the SW node as thick and short as possible.

6. Place output diode D2 close to SW terminal and make the current loop indicated as an arrow (secondary side) short.

7. In case of multilayer board, do not place GND layer or VOUT- node pattern in the internal layer that is just below the SW

node pattern and D2 anode pattern.

8. RCOMP and CCOMP are for load compensation function. Short the COMP terminal to the GND when the load

compensation function is not used.

9. Connect the exposed die pad to the GND plane.

10. Please note that temperature of the IC increase as BD7F200 has higher output power than BD7F100.

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Reference Layout Pattern

^Z1C1

^CIN1D1

CIN2

CCOMP

RCOMP

RREF

COUT

RFB

RDUMMY

Top Layer

Middle Layer

Bottom Layer

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I/O equivalent circuits

2. SDX/EN

3. COMP

1MΩ

(Typ)

SDX/EN

AGND

4. REF, 5. FB

7. SW

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Operational Notes

Reverse Connection of Power Supply

Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when

connecting the power supply, such as mounting an external diode between the power supply and the IC’s power

supply pins.

Power Supply Lines

Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at

all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic

capacitors.

Ground Voltage

Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.

Ground Wiring Pattern

When using both small-signal and large-current ground traces, the two ground traces should be routed separately but

connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal

ground caused by large currents. Also ensure that the ground traces of external components do not cause variations

on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.

Thermal Consideration

Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in

deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, increase the board size

and copper area to prevent exceeding the Pd rating.

Recommended Operating Conditions

These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.

The electrical characteristics are guaranteed under the conditions of each parameter.

Inrush Current

When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow

instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power

supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and

routing of connections.

Operation Under Strong Electromagnetic Field

Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.

Testing on Application Boards

When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may

subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply

should always be turned off completely before connecting or removing it from the test setup during the inspection

process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during

transport and storage.

10. Inter-pin Short and Mounting Errors

Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in

damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.

Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and

unintentional solder bridge deposited in between pins during assembly to name a few.

11. Unused Input Pins

Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and

extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small

charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and

cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the

power supply or ground line.

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Operational Notes – continued

12. Regarding the Input Pin of the IC

This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them

isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a

parasitic diode or transistor. For example (refer to figure below):

When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.

When GND > Pin B, the P-N junction operates as a parasitic transistor.

Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual

interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to

operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be

avoided.

Figure 27. Example of monolithic IC structure

13. Ceramic Capacitor

When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with

temperature and the decrease in nominal capacitance due to DC bias and others.

14. Area of Safe Operation (ASO)

Operate the IC such that the output voltage, output current, and power dissipation are all within the Area of Safe

Operation (ASO).

15. Thermal Shutdown Circuit (TSD)

This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always

be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction

temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below

the TSD threshold, the circuits are automatically restored to normal operation.

Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no

circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from

heat damage.

16. Over Current Protection Circuit (OCP)

This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This

protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should

not be used in applications characterized by continuous operation or transitioning of the protection circuit.

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Ordering Information

B D 7 F

0 H F N -

L B T R

Part

Package

Product class

Number

HFN:HSON8

EFJ:HTSOP-J8

LB: For industrial applications

Packing, forming specification

TR: Embossed tape and reel

(HSON8)

E2: Embossed tape and reel

(HTSOP-J8)

Marking Diagrams

HSON8 (TOP VIEW)

HTSOP-J8(TOP VIEW)

Part Number Marking

LOT Number

Part Number Marking

D 7 F

2 0 0

D 7 F 2 0 0

LOT Number

1PIN MARK

Line up

Package

Orderable Part Number

HSON8

BD7F200HFN-LBTR

BD7F200EFJ-LBE2

HTSOP-J8

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Physical Dimension, Tape and Reel Information

Package Name

HSON8

Tape

Embossed carrier tape

3000pcs

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper right when you hold

reel on the left hand and you pull out the tape on the right hand

(

)

1pin

Direction of feed

Order quantity needs to be multiple of the minimum quantity.

Reel

∗

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Physical Dimension, Tape and Reel Information

Package Name

HTSOP-J8

Tape

Embossed carrier tape

2500pcs

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

(

)

Direction of feed

1pin

Reel

Order quantity needs to be multiple of the minimum quantity.

∗

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Revision History

Date

Revision

Changes

10.Mar.2016

24.Mar.2016

001

002

New production

Add BD7F200EFJ-LB(HTSOP-J8 Package)

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Notice

Precaution on using ROHM Products

(Note 1)

1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment

aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,

bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales

representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way

responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any

ROHM’s Products for Specific Applications.

(Note1) Medical Equipment Classification of the Specific Applications

JAPAN

USA

CHINA

CLASSⅢ

CLASSⅣ

CLASSⅡb

CLASSⅢ

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor

products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate

safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which

a failure or malfunction of our Products may cause. The following are examples of safety measures:

[a] Installation of protection circuits or other protective devices to improve system safety

[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.

Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the

use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our

Products under any special or extraordinary environments or conditions (as exemplified below), your independent

verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:

[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents

[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust

[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,

H2S, NH3, SO2, and NO2

[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves

[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items

[f] Sealing or coating our Products with resin or other coating materials

[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of

flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning

residue after soldering

[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design.

5. Please verify and confirm characteristics of the final or mounted products in using the Products.

6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,

confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power

exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect

product performance and reliability.

7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in

the range that does not exceed the maximum junction temperature.

8. Confirm that operation temperature is within the specified range described in the product specification.

9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in

this document.

Precaution for Mounting / Circuit board design

1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product

performance and reliability.

2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must

be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,

please consult with the ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Notice-PAA-E

Rev.003

Precautions Regarding Application Examples and External Circuits

1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the

characteristics of the Products and external components, including transient characteristics, as well as static

characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document

are presented only as guidance for Products use. Therefore, in case you use such information, you are solely

responsible for it and you must exercise your own independent verification and judgment in the use of such information

contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses

incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper

caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be

applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,

isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation

1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:

[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2

[b] the temperature or humidity exceeds those recommended by ROHM

[c] the Products are exposed to direct sunshine or condensation

[d] the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period

may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is

exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads

may occur due to excessive stress applied when dropping of a carton.

4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of

which storage time is exceeding the recommended storage time period.

Precaution for Product Label

A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.

Precaution for Disposition

When disposing Products please dispose them properly using an authorized industry waste company.

Precaution for Foreign Exchange and Foreign Trade act

Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign

trade act, please consult with ROHM in case of export.

Precaution Regarding Intellectual Property Rights

1. All information and data including but not limited to application example contained in this document is for reference

only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any

other rights of any third party regarding such information or data.

2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the

Products with other articles such as components, circuits, systems or external equipment (including software).

3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any

third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM

will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to

manufacture or sell products containing the Products, subject to the terms and conditions herein.

Other Precaution

1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.

2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written

consent of ROHM.

3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the

Products or this document for any military purposes, including but not limited to, the development of mass-destruction

weapons.

4. The proper names of companies or products described in this document are trademarks or registered trademarks of

ROHM, its affiliated companies or third parties.

Notice-PAA-E

Rev.003

Daattaasshheeeett

General Precaution

1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.

ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny

ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior

notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s

representative.

3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all

information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or

liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or

concerning such information.

Notice – WE

Rev.001

Datasheet

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BD7F200EFJ-LB - Web Page

Distribution Inventory

Part Number

Package

Unit Quantity

BD7F200EFJ-LB

HTSOP-J8

2500

Minimum Package Quantity

Packing Type

Constitution Materials List

RoHS

2500

Taping

inquiry

Yes

BD7F200UEFJ-LB (新产品) [ROHM]

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