BD8316GWL [ROHM]

BD8316GWL是搭载了升压、反转2个信道的二极管整流型电流模式控制的开关稳压器。内置SW用FET和带软启动功能的升压负载SW,可减少外接部件。此外,各信道还可独立控制,因此可轻松构建非动作信道的低功耗序列。;
BD8316GWL
型号: BD8316GWL
厂家: ROHM    ROHM
描述:

BD8316GWL是搭载了升压、反转2个信道的二极管整流型电流模式控制的开关稳压器。内置SW用FET和带软启动功能的升压负载SW,可减少外接部件。此外,各信道还可独立控制,因此可轻松构建非动作信道的低功耗序列。

开关 软启动 二极管 稳压器
文件: 总23页 (文件大小:1314K)
中文:  中文翻译
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Datasheet  
Single-chip Type with Built-in FET Switching Regulator Series  
Step-up and inverted  
2-channel DC/DC converter  
with Built-in Power MOSFET  
BD8316GWL  
Description  
The BD8316GWL is step-up and inverted 2-channel  
Important Specifications  
Input voltage range  
Output boost voltage  
Output inverted voltage  
Maximum current  
Operating frequency  
Nch FET ON resistance  
Pch FET ON resistance  
Standby current  
2.55.5 [V]  
Input voltage(max)~18 [V]  
-9.0-1.0 [V]  
switching regulator with integrated internal high-side  
MOSFET. With wide input range from 2.5~5.5V ,it  
suitable for application of portable item. In addition,The  
small package design is ideal for miniaturizing the  
power supply.  
1[A](max)  
1.6 [MHz] (typ.)  
230[mΩ]  
230[mΩ]  
1[μA](max)  
Features  
Wide input voltage range of 2.5V to 5.5 V  
Package  
UCSP50L1 (WLCSP)  
1.8mm×1.5mm×0.5mm, 4×3glid,11pin,  
High frequency operation 1.6MHz  
Incorporates Nch FET of 230mΩ/22V and Pch  
Pow FET of 230mΩ/15V  
Incorporates Soft Start (4.2msec(typ))and hight  
side switch of boost channel  
Independent ON/OFF signal(STB). Built-in  
discharge SW for step up channel  
Small package UCSP50L1( 1.8mm×1.5mm, 4×  
3 grid, 11pin, WLCSP)  
Circuits protection OCP,SCP,UVLO,TSD  
Application  
LCD battery  
CCD battery  
Portable items that are represented by mobile phone  
and DSC  
Typical Application Input: 2.5 to 5.5 V, ch1 output: 5.6 V / 200m A, ch2 output:5.6V/200mA  
0.1uF/10V  
10kΩ  
56kΩ  
Vout1: -5.6V/200mA  
4.7uF/10V  
4.7uH  
VREF  
VDD  
NON1  
LX1  
Vin→  
2.5~5.5V  
4.7uF/10V  
DIS1  
EN CH1→  
EN CH2→  
STB1  
STB2  
HS2L  
LX2  
4.7uH  
Vout2: 5.6V/200mA  
GND  
INV2  
4.7uF/10V  
180kΩ  
30kΩ  
Fig.1 Application schematic  
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Pin Description  
C
B
A
3
4
1
2
Fig.2 Pin assignment (Bottom view)  
Pin No.  
A-1  
Pin Name  
Function  
VDD  
HS2L  
LX2  
Power input voltage pin. Connect to input ceramic capacitor bigger than 0.47uF.  
Load SW output pin .Connect to inductor  
A-2  
A-3  
Boost channel drain Nch Power MOS. Connect to diode and inductor.  
Ground connection  
A-4  
GND  
LX1  
B-1  
PchPowerMOS drain of boost channel. Connect to diode and inductor  
Enable pin of inverted channel.  
B-3  
B-4  
C-1  
C-2  
STB1  
STB2  
DIS1  
ON threshold set to 1.5V. Integrated pull down resistance (800kΩ(typ))  
Enable pin of boost channel.  
ON threshold set to 1.5V. Integrated pull down resistance (800kΩ(typ))  
Discharge SW of inverted channel. Connect to output of inverted channel.  
STB1 disable , Output pin voltage is discharged by 100Ω(typ)  
Reference voltage of inverted channel.  
VREF  
1.0V(typ) is included in error amp offset  
Feedback pin of inverted channel. Connect to feedback resistance and set output voltage.  
The method of output voltage setting is P16/20.  
C-3  
C-4  
NON1  
INV2  
When inverted cannel is disable , the pin is discharged by integrated resistance (150Ω(typ))  
Feedback pin of boost channel. Connect to feedback resistance and set output voltage.  
The method of output voltage setting is P16/20.  
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Block Diagram  
Fig.3 Block diagram  
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Function blacks description  
1.Voltage Reference  
This block generates ERROR AMP reference voltage.  
The reference voltage of CH1 is 1.0V, The reference voltage of CH2 is 0.8V.  
2.UVLO  
Circuit for preventing malfunction at low voltage input.  
This circuit prevents malfunction at the start of DC/DC converter and low input voltage .The function monitors VCC pin  
voltage and if VCC voltage is lower than 2.2V, function turns off all output of FETs and DC/DC converter , and reset the  
timer latch of the internal SCP circuit and soft-start circuit.  
3.SCP  
Short-circuit protection function based on timer latch system.  
When the voltage of NON1 pin is higher than 0V or INV2 pin voltage is lower than 0.8V, the internal SCP circuit starts  
counting.  
SCP circuit detects output of Error AMP. Since internal Error AMP has highly gain as high as 80dB or more, if input  
erroramp voltage cross reference voltage ,the output voltage of Error AMP goes high and detects SCP .  
The internal counter is in synch with OSC, the latch circuit activates after the counter counts oscillations to turn off DC/DC  
converter output (about 40.9 msec ).  
To reset the latch circuit, turn off the STB pin once. Then, turn it on again or turn on the power supply voltage again.  
4.OSC  
This function determine oscillation frequency . Oscillation frequency of DC/DC converter set at 1.6MHz.  
5.ERROR AMP  
Error amplifier watch output voltage and output PWM control signals.  
The internal reference voltage for Error AMP of ch1 is set at 0V.  
The internal reference voltage for Error AMP of ch2 is set at 0.8V.  
6.Timing Control  
Voltage-pulse width converter for controlling output voltage corresponding to input voltage.  
Comparing the internal SLOPE waveform with the ERROR AMP output voltage, PWM COMP controls the pulse width  
and outputs to the driver.  
Max Duties of ch1 and ch2 are set at 86%.  
7.SOFT START  
Circuit for preventing in-rush current at the start of DC/DC converter by bringing the output voltage.  
Soft-start time is in synch with the internal OSC, and the output voltage of the DC/DC converter reaches the set voltage  
after about 4.2m sec.  
8.OCP  
Circuit for preventing malfunction at over current.  
Under input current over electrical characteristics , it supply minimum duty to DC/DC converter and IC stop safety by SCP  
detected.  
9.TSD  
Circuit for preventing malfunction at high Temperature .  
When it detects an abnormal temperature exceeding Maximum Junction Temperature (Tj=150), it turns OFF all Output  
FET, and turns OFF DC/DC Comparator Output.  
10. ON/OFF  
Voltage applied on STB pin to control ON/OFF channel of each channel.  
Turned ON when a voltage of 1.5 V or higher is applied and turned OFF when the terminal is open or 0 V is applied.  
Incorporates approximately 800 kpull-down resistance.  
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Absolute maximum ratings(T=25)  
Parameter  
Symbol  
VDD  
Rating  
-0.3~7  
-0.3~7  
1.0  
Unit  
V
Maximum power supply voltage  
STB1,STB2  
IHS2L  
ILX1  
V
A
Maximum input current  
1.0  
A
ILX2  
1.0  
A
VDD-LX1  
LX2  
15  
V
22  
V
Maximum input voltage  
NON1  
INV2  
-0.3~7  
-0.3~7  
-9~0.3  
730  
V
V
DIS1  
V
Power dissipation  
Operating temperature range  
Storage temperature range  
Junction temperature  
Pd  
mW  
Topr  
-35~+85  
-55~+150  
+150  
Tstg  
Tjmax  
((*1) When mounted on 74.2×74.2×1.6mm and operated over 25℃ Pd reduces by 4.96mW/℃.  
Recommended operating conditions  
Standard value  
Parameter  
Symbol  
Units  
MIN  
2.5  
TYP  
-
MAX  
5.5  
Power supply voltage  
Inverted output voltage  
Step up output voltage  
VDD  
VO1  
VO2  
V
V
V
-9.0  
VCC  
-1.0  
18  
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Electrical characteristics(Ta=25℃, VDD=3.6V)  
Standard value  
TYP  
Parameter  
Symbol  
Unit  
Conditions  
MIN  
MAX  
【Low voltage input malfunction preventing circuit】  
Detect threshold voltage  
Hysteresis voltage  
【Oscillator】  
VUV  
-
2.2  
2.35  
150  
V
VDD sweep down  
ΔVUVhy  
50  
100  
mV  
Oscillating frequency  
LX1 Max Duty  
Fosc  
1.44  
82  
1.6  
86  
86  
1.76  
90  
MHz  
Dmax1  
Dmax2  
%
%
LX2 Max Duty  
82  
90  
【Error AMP, VREF】  
NON1 feedback resistance  
20kΩ, 120kΩ  
CH1output voltage  
VO1  
-6.072  
-6.000  
-5.928  
V
VREF line regulation  
INV threshold voltage  
NON1 input bias current  
INV2 input bias current  
CH1 Soft start time  
CH2 Soft start time  
【Internal FET】  
DVLi  
VINV  
INON1  
IINV2  
TSS1  
TSS2  
-
0.792  
-50  
-50  
3.7  
4.0  
0.800  
0
12.5  
0.808  
50  
mV  
V
VDD=2.5~5.5V  
nA  
nA  
ms  
ms  
STB1=3.6V, NON1=-0.2V  
INV2=1.2V  
0
50  
4.2  
4.2  
4.7  
3.7  
4.7  
LX1 PMOS ON resistance  
DIS1discharge resistance  
NON1 discharge resistance  
LX2HighsideSW ON resistance  
LX2 NMOS ON resistance  
LX1 OCP threshold  
LX2 OCP threshold  
HS2L leak current  
RON1p  
RDIS1  
-
-
300  
100  
150  
150  
300  
2.4  
2.4  
0
480  
160  
240  
240  
480  
-
mΩ  
Ω
VSTB1=0V, IDIS1=-1mA  
VSTB1=0V, INON1=1mA  
RNON1  
RON2p  
RON2n  
Iocp1  
-
Ω
-
mΩ  
mΩ  
A
-
1.2  
1.2  
-1  
-1  
-1  
Iocp2  
-
A
IleakH1  
I leak1  
I leak2  
1
uA  
uA  
uA  
LX1 leak current  
0
1
LX2 leak current  
0
1
【STB】  
Active  
VSTBH  
VSTBL  
RSTB1  
1.5  
-0.3  
500  
-
-
5.5  
0.3  
V
V
STB pin  
Control voltage  
Non-active  
STB pin pull down resistance  
【Circuit current】  
800  
1400  
kΩ  
Standby current  
ISTB  
IDD  
-
-
-
1
uA  
uA  
STB1=STB2=3.6V  
Circuit current of operation VDD  
450  
650  
NON1=-0.2V, INV2=1.2V  
◎This product is not designed for normal operation within a radioactive environment.  
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Reference data  
(unless otherwise specified Ta=25, VCC=3.6V)  
0.850  
0.840  
0.830  
0.820  
0.810  
0.800  
0.790  
0.780  
0.770  
0.760  
0.750  
1.030  
1.020  
1.010  
VCC=2.5V  
VCC=5.5V  
VCC=3.6V  
1.000  
0.990  
0.980  
0.970  
VCC=2.5V  
VCC=3.6V  
VCC=5.5V  
TEMPERATURE[℃]  
50 100  
TEMPERATURE[℃]  
50 100  
-50  
0
150  
-50  
0
150  
Fig.4 VREF vs temp  
Fig.5 INV2 threshold vs temp  
1.700  
2.400  
2.300  
2.200  
2.100  
2.000  
VCC=5.5V  
VCC=3.6V  
1.600  
1.500  
1.400  
1.300  
Detect threshold  
Reset threshold  
VCC=2.5V  
0
2
4
6
8
-50  
0
50  
100  
150  
VCC[V]  
TEMPERATURE[℃]  
Fig.6 Oscillation frequency vs temp  
Fig.7 UVLO detect threshold  
Vs temp  
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1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.4  
1.2  
1.0  
VCC=7.0V  
VCC=7.0V  
VCC=2.5V  
VCC=5.5V  
VCC=3.6V  
0.8  
0.6  
0.4  
0.2  
0.0  
VCC=2.5V  
VCC=5.5V  
VCC=3.6V  
-50  
0
50  
100  
150  
-50  
0
50  
100  
150  
TEMPERATURE[℃]  
TEMPERATURE[℃]  
Fig.8 STB ON threshold voltage  
vs temp  
Fig.9 STB OFF threshold voltage  
vs temp  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
Ta=150deg  
Ta=25deg  
Ta=-60deg  
Ta=150deg  
Ta=25deg  
Ta=-60deg  
0
0
0
2
4
6
8
0
2
4
6
8
VCC[V]  
VCC[V]  
Fig.11 LX2 high side FET ON  
registance vs VCC  
Fig.10 LX1 high side FET ON  
registance vs VCC  
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300  
250  
200  
150  
100  
50  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
Ta=150deg  
Ta=25deg  
Ta=-60deg  
Ta=150deg  
Ta=25deg  
Ta=-60deg  
0
0
0
2
4
6
8
0
2
4
6
8
VCC[V]  
VCC[V]  
Fig.13 DIS1 discharge SW ON  
registance vs VCC  
Fig.12 HS2L high side FET ON  
registance vs VCC  
1,000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
300  
250  
200  
150  
100  
50  
Ta=25deg  
Ta=150deg  
Ta=25deg  
Ta=-60deg  
0
0
1
2
3
4
5
0
2
4
6
8
VCC[V]  
VCC[V]  
Fig.15 VCC input current vs VCC  
(STB ON)  
Fig.14 NON1 discharge SW ON  
registance vs VCC  
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20  
15  
10  
5
VCC=5.5V  
VCC=3.6V  
VCC=2.5V  
0
-60 -40 -20  
0
20 40 60 80 100 120 140  
TEMPURTURE[℃]  
Fig.16 VCC input current vs Temp  
(STB OFF)  
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Example of Application1 Input: 2.5 to 5.5 V, ch1 output: 5.6 V / 200m A, ch2 output:5.6V/200mA  
4.7μF/10V  
(GRM21BB31A475K)  
0.1μF/10V  
(GRM155B11A104K)  
56kΩ  
10kΩ  
180kΩ  
30kΩ  
30V/1A  
(RSX101VA-30)  
4.7μH  
(NR3015T4R7M)  
4.7μH  
(NR3015T4R7M)  
30V/1A  
1μF/10V  
(RSX101VA-30)  
4.7μF/10V  
(GRM188B11A105K)  
(GRM21BB31A475K)  
Fig.17 Example of Application1  
Example of Application2  
Input: :2.5~5.5 V  
ch1 output: -9V / 30mA  
ch2output :  
18V/ 30mA  
430kΩ  
20kΩ  
180kΩ  
4.7μF/25V  
20kΩ  
0.1μF/10V  
30V/1A  
4.7μH  
1μF/10V  
30V/1A  
4.7μH  
4.7μF/16V  
Fig.18 Example of Application2  
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Example of Board Layout  
ROHM SMD Evaluation Board  
Fig.19 Assembly Layer  
Fig.20 Bottom Layer  
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Typical Performance Characteristic  
(Unless otherwise specified, Ta = 25°C, VCC = 3.6V)  
(Example of application 1)  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
Vin=3.6V  
80  
70  
Vin=2.5V  
60  
Vin=2.5V  
50  
Vin=4.5V  
Vin=3.6V  
40  
30  
Vin=4.5V  
20  
10  
0
1
10  
100  
1000  
1
10  
100  
1000  
Output Current [mA]  
Output Current[mA]  
Fig.21 CH1 Power conversion  
efficiency vs output current  
Fig.22 CH2 Power conversion  
efficiency vs output current  
5.400  
5.450  
5.500  
5.550  
5.600  
5.650  
5.700  
5.750  
5.800  
5.800  
5.750  
5.700  
5.650  
5.600  
5.550  
5.500  
5.450  
5.400  
Vin=2.5V  
Vin=2.5V  
Vin=4.5V  
Vin=3.6V  
Vin=4.5V  
Vin=3.6V  
0
50  
100  
150  
200  
0
50  
100  
150  
200  
Output Current [A]  
Output Current [A]  
Fig.23 CH1 Output voltage  
vs Output Current  
Fig.24 CH2 Output voltage  
vs Output Current  
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5.4  
5.45  
5.5  
5.8  
5.75  
5.7  
5.55  
5.6  
5.65  
5.6  
5.65  
5.7  
Io=10mA  
5.55  
5.5  
Io=10mA  
5.75  
5.45  
5.4  
5.8  
2.5  
3.5  
4.5  
5.5  
2.5  
3.5  
4.5  
5.5  
Input Voltage[V]  
Input Voltage[V]  
Fig.25 CH1 Output voltage  
vs Input voltage  
Fig.26 CH2 Output voltage  
vs Input voltage  
5msec/div  
5msec/div  
Vo1=100mV/div  
Io=100mA/div  
Vo2=100mV/div  
Io=100mA/div  
Fig.27 CH1 Output current response  
Fig.28 CH2 Output current response  
(output current : 10mA 100mA)  
(output current : 10mA 100mA)  
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1msec/div  
1msec/div  
STB1=2V/div  
Vo1=2V/div  
STB=2V/div  
Vo2=2V/div  
Fig.30 CH2 Soft start waveform  
Fig.29 CH1 Soft start waveform  
500usec/div  
STB1=2V/div  
Vo1=2V/div  
Fig.31 CH1 Discharge waveform [500usec/div]  
(STB1:High Low)  
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Selection of Parts for Applications  
(1)Output inductor  
A shielded inductor that satisfies the current rating (current value, Ipeak as shown in the drawing below) and has a low  
DCR (direct current resistance component) is recommended.  
Inductor values affect output ripple current greatly.  
Ripple current can be reduced as the inductor L value becomes larger and the  
switching frequency becomes higher as the equations shown below.  
ΔIL  
Vin Vout +Vf  
Vin × (Vout +Vf )  
1
2
I peak  
=
=
× Iout  
+
×
(Inverted channel)  
Vin  
L × f × (Vin Vout +Vf )  
Fig. 32 Ripple current  
Iout ×Vout  
Vin ×η  
Vin × (Vout Vin )  
L × f ×Vout  
1
2
I peak  
+
×
(Boost channel)  
η: Efficiency(<0.92), f: Switching frequency(1.6MHz), L: inductance,  
The second terms of equations above are ripple current of the inductor(IL of Fig.32) which should be  
set at about 20 to 50% of the maximum output current.  
Current over the inductor rating flowing in the inductor brings the inductor into magnetic saturation, which may lead to  
lower efficiency or output bad oscillation. Select an inductor with an adequate margin so that the peak current does not  
exceed the rated current of the inductor.  
(2) Output capacitor  
CH1  
The reference voltage of CH1 is 1.0V and the internal reference voltage of the ERROR AMP is 0 V. Output voltage  
should be obtained by referring to Equation (3) of Fig.33.  
VREF  
1.0 V  
ERROR AMP  
R1B  
R1A  
R1B  
Vout = −  
ꢀ・・・ꢀ(3)  
NON1  
R1A  
VOUT  
Fig.33 CH1output setting  
CH2  
The internal reference voltage of the ERROR AMP is 0.8 V. Output voltage should be obtained by referring to Equation  
(4) of Fig.34.  
VOUT  
R2A  
INV2  
(R2A + R2B)  
Vout  
=
× 0.8ꢀ・・・ꢀ(4)  
R2B  
R2B  
Inside reference voltage  
0.8V  
Fig.34 CH2 output setting  
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(3) Output capacitor  
A ceramic capacitor with low ESR is recommended for output in order to reduce output ripple.  
There must be an adequate margin between the maximum rating and output voltage of the capacitor, taking the DC bias  
property into consideration.  
Output ripple voltage when ceramic capacitor is used is obtained by the following equation.  
1
Vpp=IL×  
IL×RESR [V]  
2π×f×Co  
Co is set within the range of 120uF.  
Setting must be performed so that output ripple is within the allowable ripple voltage.  
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I/O Equivalence Circuit  
VREF  
NON1,INV2  
VCC  
VCC  
VCC  
VCC  
VREF  
NON1,INV2  
STB1,STB2  
VCC,LX1,DIS1,GND  
VCC  
VCC  
LX1  
STB1,STB2  
GND  
DIS1  
HS2L  
LX2  
VCC  
VCC  
LX2  
HS2L  
Fig.35 I/O Equivalence Circuit  
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Operation Notes  
.) Absolute maximum ratings  
This product is produced with strict quality control. However, the IC may be destroyed if operated beyond its absolute  
maximum ratings. If the device is destroyed by exceeding the recommended maximum ratings, the failure mode will be difficult  
to determine. (E.g. short mode, open mode) Therefore, physical protection counter-measures (like fuse) should be implemented  
when operating conditions beyond the absolute maximum ratings anticipated.  
.) GND potential  
Make sure GND is connected at lowest potential.  
.) Setting of heat  
Make sure that power dissipation does not exceed maximum ratings.  
.) Pin short and mistake fitting  
Avoid placing the IC near hot part of the PCB. This may cause damage to IC. Also make sure that the output-to-output and output  
to GND condition will not happen because this may damage the IC.  
.) Actions in strong magnetic field  
Exposing the IC within a strong magnetic field area may cause malfunction.  
.) Mutual impedance  
Use short and wide wiring tracks for the main supply and ground to keep the mutual impedance as small as possible. Use inductor  
and capacitor network to keep the ripple voltage minimum.  
.) Thermal shutdown circuit (TSD circuit)  
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is designed only  
to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not  
continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is assumed.  
.)Rush current at the time of power supply injection.  
An IC which has plural power supplies, or CMOS IC could have momentaly rush current at the time of power supply injection.  
Because there exists inside logic uncertainty state. Please take care about power supply coupling capacity and width of power  
Supply and GND pattern wiring.  
.)IC Terminal Input  
This IC is a monolithic IC that has a P- board and P+ isolation for the purpose of keeping distance between elements. A P-N junction  
is formed between the P-layer and the N-layer of each element, and various types of parasitic elements are then formed.  
For example, an application where a resistor and a transistor are connected to a terminal (shown in Fig.36):  
When GND > (terminal A) at the resistor and GND > (terminal B) at the transistor (NPN), the P-N junction operates as  
a parasitic diode.  
When GND > (terminal B) at the transistor (NPN), a parasitic NPN transistor operates as a result of the NHayers of other  
elements in the proximity of the aforementioned parasitic diode.  
Parasitic elements are structurally inevitable in the IC due to electric potential relationships. The operation of parasitic elements  
Induces the interference of circuit operations, causing malfunctions and possibly the destruction of the IC. Please be careful not to  
use the IC in a way that would cause parasitic elements to operate. For example, by applying a voltage that is lower than the  
GND (P-board) to the input terminal.  
Transistor (NPN)  
Resistor  
B
E
C
Terminal A)  
Terminal B)  
GND  
Terminal A)  
N
P
P+  
P+  
P+  
P+  
P
N
Parasitic element  
N
N
N
N
P-board  
P-board  
GND  
Parasitic  
element  
GND  
Parasitic  
element  
Fig.36 Simplified structure of a Bipolar IC  
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TSZ02201-0Q1Q0AJ00170-1-2  
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BD8316GWL  
Ordering part number  
B
D
8
3
1
6
G W L  
-
E2  
Part No.  
Part No.  
Package  
Packaging and forming specification  
E2: Embossed tape and reel  
GWL: USCP50L1  
External information  
1PIN MARK  
Lot No.  
8316  
1.8±0.05  
UCSP50L1
(BD8316GWL)  
<Tape and Reel information>  
1PIN MARK  
Tape  
Embossed carrier tape  
3000pcs  
Quantity  
E2  
Direction  
of feed  
1.8 0.05  
The direction is the 1pin of product is at the upper left when you hold  
reel on the left hand and you pull out the tape on the right hand  
(
)
S
0.08  
S
φ
11- 0.2 0.05  
A
0.05  
A B  
φ
(
B
C
B
A
0.15)INDEX POST  
1
2
3
4
Direction of feed  
1pin  
0.3 0.05  
P=0.4×3  
Reel  
Order quantity needs to be multiple of the minimum quantity.  
(Unit : mm)  
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Notice  
Precaution on using ROHM Products  
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,  
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you  
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport  
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car  
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or  
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.  
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any  
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific  
Applications.  
(Note1) Medical Equipment Classification of the Specific Applications  
JAPAN  
USA  
EU  
CHINA  
CLASS  
CLASSⅣ  
CLASSb  
CLASSⅢ  
CLASSⅢ  
CLASSⅢ  
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor  
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate  
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which  
a failure or malfunction of our Products may cause. The following are examples of safety measures:  
[a] Installation of protection circuits or other protective devices to improve system safety  
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure  
3. Our Products are designed and manufactured for use under standard conditions and not under any special or  
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way  
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any  
special or extraordinary environments or conditions. If you intend to use our Products under any special or  
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of  
product performance, reliability, etc, prior to use, must be necessary:  
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents  
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust  
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,  
H2S, NH3, SO2, and NO2  
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves  
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items  
[f] Sealing or coating our Products with resin or other coating materials  
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of  
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning  
residue after soldering  
[h] Use of the Products in places subject to dew condensation  
4. The Products are not subject to radiation-proof design.  
5. Please verify and confirm characteristics of the final or mounted products in using the Products.  
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,  
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power  
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect  
product performance and reliability.  
7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual  
ambient temperature.  
8. Confirm that operation temperature is within the specified range described in the product specification.  
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in  
this document.  
Precaution for Mounting / Circuit board design  
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product  
performance and reliability.  
2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the  
ROHM representative in advance.  
For details, please refer to ROHM Mounting specification  
Notice - GE  
Rev.002  
© 2014 ROHM Co., Ltd. All rights reserved.  
Daattaasshheeeett  
Precautions Regarding Application Examples and External Circuits  
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the  
characteristics of the Products and external components, including transient characteristics, as well as static  
characteristics.  
2. You agree that application notes, reference designs, and associated data and information contained in this document  
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely  
responsible for it and you must exercise your own independent verification and judgment in the use of such information  
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses  
incurred by you or third parties arising from the use of such information.  
Precaution for Electrostatic  
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper  
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be  
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,  
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).  
Precaution for Storage / Transportation  
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:  
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2  
[b] the temperature or humidity exceeds those recommended by ROHM  
[c] the Products are exposed to direct sunshine or condensation  
[d] the Products are exposed to high Electrostatic  
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period  
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is  
exceeding the recommended storage time period.  
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads  
may occur due to excessive stress applied when dropping of a carton.  
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of  
which storage time is exceeding the recommended storage time period.  
Precaution for Product Label  
QR code printed on ROHM Products label is for ROHM’s internal use only.  
Precaution for Disposition  
When disposing Products please dispose them properly using an authorized industry waste company.  
Precaution for Foreign Exchange and Foreign Trade act  
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,  
please consult with ROHM representative in case of export.  
Precaution Regarding Intellectual Property Rights  
1. All information and data including but not limited to application example contained in this document is for reference  
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any  
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable  
for infringement of any intellectual property rights or other damages arising from use of such information or data.:  
2. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any  
third parties with respect to the information contained in this document.  
Other Precaution  
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.  
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written  
consent of ROHM.  
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the  
Products or this document for any military purposes, including but not limited to, the development of mass-destruction  
weapons.  
4. The proper names of companies or products described in this document are trademarks or registered trademarks of  
ROHM, its affiliated companies or third parties.  
Notice - GE  
Rev.002  
© 2014 ROHM Co., Ltd. All rights reserved.  
Daattaasshheeeett  
General Precaution  
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.  
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny  
ROHM’s Products against warning, caution or note contained in this document.  
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior  
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s  
representative.  
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all  
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or  
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or  
concerning such information.  
Notice – WE  
Rev.001  
© 2014 ROHM Co., Ltd. All rights reserved.  

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