BD8LB600FS-C [ROHM]

BD8LB600FS-C是车载/工业设备用SPI输入8ch低边开关。内置负载开路检测电路、过电流保护电路、有源钳位电路、过热保护电路。;
BD8LB600FS-C
型号: BD8LB600FS-C
厂家: ROHM    ROHM
描述:

BD8LB600FS-C是车载/工业设备用SPI输入8ch低边开关。内置负载开路检测电路、过电流保护电路、有源钳位电路、过热保护电路。

开关 过电流保护
文件: 总27页 (文件大小:1294K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Datasheet  
IPD series for Automotive  
8ch Low-side switch  
BD8LB600FS-C  
Features  
Product Summary  
Monolithic power IC that has a built-in control part  
(CMOS) and a power MOS FET on 1chip  
8ch Low-side switch for driving resistive, inductive,  
capacitive load  
16bit Serial peripheral interface(SPI) for diagnostics  
and control  
Digital part Operating voltage  
3.0V to 5.5V  
4.0V to 5.5V  
600m  
Analog part Operating voltage  
On-state resistance(25°C,Typ)  
Over current limit(Typ)  
1.80A  
Built-in Open Load Detection circuit in output-off state  
Built-in Self restart Over Current Protection circuit  
(OCP)  
Active clamp energy(25°C)  
70mJ  
Built-in Over Voltage Protection for Output circuit  
Built-in Self restart Over Heating Protection circuit  
(TSD)  
Package  
SSOP-A24  
10.00mm x 7.80mm x 2.10mm  
Low On resistance of RON=600m(VIN=5V, Tj=25°C,  
IDn=0.2A)  
Surface mount SSOP-A24 Package  
AEC-Q100 Qualified(1)  
(1)Grade 1  
Overview  
BD8LB600FS-C is an Automotive 8ch Low-Side switch.  
It has a built-in Over Current Protection circuit, Thermal  
Shutdown circuit, Open Load Detection circuit, Under  
Voltage Lock Out circuit, and has a Diagnostic  
Output(SO) function during abnormal detection.  
SSOP-A24  
Application  
8ch Low-side switch for driving resistive,  
inductive, capacitive load  
Basic Application Circuit (Recommendation)  
Product configuration: Silicon monolithic integrated circuit The product is not designed for radiation sistance.  
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Pin Descriptions  
I/O(1)  
-
Pin  
1
Symbol  
GND  
Function  
GND  
2
GND  
OUT1  
-
GND  
3
O
O
O
O
O
O
O
O
-
Channel 1 output  
Channel 2 output  
Channel 3 output  
Channel 4 output  
Channel 5 output  
Channel 6 output  
Channel 7 output  
Channel 8 output  
GND  
4
OUT2  
5
OUT3  
6
OUT4  
7
OUT5  
8
OUT6  
9
OUT7  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
OUT8  
GND  
GND  
-
GND  
VDD  
-
Digital power supply  
IN4(IN8)  
IN3(IN7)  
IN2(IN6)  
IN1(IN5)  
DIR  
I
I
I
I
I
PD Control input for Channel 4 and 8 (DIR=L) / Control input for Channel 8 (DIR=H)  
PD Control input for Channel 3 and 7 (DIR=L) / Control input for Channel 7 (DIR=H)  
PD Control input for Channel 2 and 6 (DIR=L) / Control input for Channel 6 (DIR=H)  
PD Control input for Channel 1 and 5 (DIR=L) / Control input for Channel 5 (DIR=H)  
PD SPI mode, DIR mode change input terminal  
SO  
O
Serial data output terminal  
SCLK(IN4)  
RST_B(IN3)  
SI(IN2)  
CS_B(IN1)  
VDDA  
I
I
I
I
PD Serial clock (DIR=L) / Control input for Channel 4 (DIR=H)  
PD Reset terminal (DIR=L) / Control input for Channel 3 (DIR=H)  
PD Serial data input (DIR=L) / Control input for Channel 2 (DIR=H)  
PU/PD(2) SPI enable input (DIR=L) / Control input for Channel 1 (DIR=H)  
-
Analog power supply  
(1) OOutput terminal, IInput terminal  
PDPull Down terminal, PUPull Up terminal  
(2) Pull Up at DIR=Low setting, Pull Down at DIR=High  
Pin Configurations  
SSOP-A24  
(TOP VIEW)  
1.GND  
2.GND  
24.VDDA  
23.CS_B(IN1)  
22.SI(IN2)  
21.RST_B(IN3)  
20.SCLK(IN4)  
19.SO  
3.OUT1  
4.OUT2  
5.OUT3  
6.OUT4  
7.OUT5  
8.OUT6  
9.OUT7  
18.DIR  
17.IN1(IN5)  
16.IN2(IN6)  
15.IN3(IN7)  
14.IN4(IN8)  
13.VDD  
10.OUT8  
11.GND  
12.GND  
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Absolute Minimum Ratings  
Item  
Symbol  
Limit values  
Unit  
DRAIN-SOURCE voltage  
Power supply voltage (Logic)  
Power supply voltage (Analog)  
Diagnostic output voltage  
Output current (DC)  
VDS  
VDD  
VDDA  
VSO  
IOUT  
IOP  
45(Internally limited)  
7 (1)  
V
V
V
V
A
A
V
7
-0.3 to +7  
1.0(Internally limited) (2)  
Internally limited (3)  
-0.3 to +7  
Output current (Pulse)  
Input voltage  
VIN  
Power consumption  
Pd  
1.0(SSOP-A24) (4)  
W
Operating temperature range  
Storage temperature range  
Maximum junction temperature  
Topr  
Tstg  
-40 to +150  
-55 to +150  
150  
°C  
°C  
°C  
mJ  
mJ  
Tjmax  
70 (5)  
50 (6)  
(Tj(0) = 25°C)  
Active clamp energy  
(single pulse)  
EAV  
(Tj(0) = 150°C)  
(1) HoweverVDD < VDDA + 0.3V  
(2) However, exceed neither Pd nor ASO.  
(3) Internally limited by the overcurrent limiting circuit.  
(4) IC mounted on ROHM standard board (70×70*1.6[mm], glass epoxy 1 layer board).  
Derate by 8.0mW/above 25.  
(5) Min Active clamp energy at Tj(0) = 25°C, using single non-repetitive pulse of 0.5A  
(6) Min Active clamp energy at Tj(0) =150°C, using single non-repetitive pulse of 0.5A. Not 100% tested.  
Operating Voltage Ratings  
Item  
Code  
VDD  
Limit values  
3.0 to 5.5  
4.0 to 5.5  
Unit  
V
Digital part Operating voltage  
Analog part Operating voltage  
VDDA  
V
Heat Dissipation Characteristic  
PdW]  
2.0  
1.5  
1.0  
0.5  
Ta°C]  
0
25  
50  
75  
100  
125  
150  
(SSOP-A24) IC mounted on ROHM standard board (70×70*1.6[mm], glass epoxy 1 layer board).  
Derate by 8.0mW/°C above 25°C.  
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© 2015 ROHM Co., Ltd. All rights reserved.  
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Electrical Characteristicsunless otherwise specified, VDDA=5V,VDD=5V,-40°C Tj +150°C )  
Limit values  
Item  
Symbol  
Unit  
Condition  
Min  
Typ  
Max  
[Power Supply Block]  
VDDA Standby current  
(All output on standby mode)  
VDD Standby current  
VDDA=VDD=5V,  
CS_B=5V, RST_B=0V  
VDDA=VDD=5V,  
IDDAS  
IDDS  
-
-
0
0
20  
20  
μA  
μA  
(All output on standby mode)  
CS_B=5V, RST_B=0V  
VDDA Operating current)  
VDD Operating current)  
IDDA  
IDD  
-
-
2
5
1
mA  
mA  
VDDA=VDD=5V  
VDDA=VDD=5V  
0.5  
VDDA power on reset  
Threshold Voltage  
VDD power on reset  
Threshold Voltage  
[Input PIN]  
VPORA  
VPOR  
-
-
-
-
4.0  
2.7  
V
V
L level input voltage  
H level input voltage  
Input Hysteresis  
VINL  
VINH  
VHYS  
0
-
-
VDD×0.2  
VDD  
V
V
V
VDD×0.7  
0.1  
0.3  
0.5  
L level input current 1  
(RST_B,DIR,IN1 to IN4,SCLK,SI)  
RST_B=DIR=IN1 to IN4=SCLK  
=SI=0V  
IINL1  
IINL2  
IINH1  
IINH2  
-10  
0
10  
μA  
μA  
L level input current 2(CS_B)  
-100  
-50  
-25  
CS_B(DIR=L)=0V  
H level input current 1  
(RST_B,DIR,IN1 to IN4,SCLK,SI)  
RST_B=DIR=IN1 to IN4=SCLK  
=SI=5V  
25  
50  
0
100  
10  
μA  
μA  
H level input current 2(CS_B)  
[Power MOS Output]  
-10  
CS_B(DIR=L)=5V  
VDD=VDDA=5V, IDS=0.2A,  
Tj=25°C  
VDD=VDDA=5V, IDS=0.2A,  
Tj=150°C  
-
-
0.6  
1.1  
0.8  
1.4  
Output ON resistance  
Output sink current  
RDS(ON)  
-
-
10  
15  
20  
40  
μA  
μA  
VDS=30V, Tj=25°C  
IL(OFF)  
IOL  
tON  
VDS=30V, Tj=150°C  
Output leak current  
(Open load detected)  
25  
-
50  
20  
20  
1
100  
50  
50  
3
μA  
μs  
VDS=40V  
VDD=VDDA=5V,CS_B=0V/5V,  
RL=60,VB=12V  
VDD=VDDA=5V,CS_B=0V/5V,  
RL=60,VB=12V  
VDD=VDDA=5V,CS_B=0V/5V,  
RL=60,VB=12V  
VDD=VDDA=5V,CS_B=0V/5V,  
RL=60,VB=12V  
Switching time  
tOFF  
-
μs  
Slew rate on  
dV/dtON  
-dV/dtOFF  
0.3  
0.3  
V/μs  
V/μs  
Slew rate off  
1
3
VDD=VDDA=5V,INn=0V/5V,  
RL=60,VB=12V  
PWM Output range  
fPWM  
VCL  
-
-
50  
-
1.2  
55  
-
kHz  
V
Output clamp voltage  
45  
31  
IDS=1mA(at Output turn off)  
Minimum Output Voltage  
VDS(S)  
V
INn(1)=5V,RL=0Ω  
(Load short-circuited)  
(1) n means ch number  
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BD8LB600FS-C  
Electrical Characteristicsunless otherwise specified, VDDA=5V,VDD=5V,-40°C Tj +150°C )  
Limit values  
Item  
Symbol  
Unit  
Condition  
Min  
Typ  
Max  
[Serial Output]  
L level output voltage  
H level output voltage  
VSOL  
VSOH  
-
0.3  
0.6  
-
V
V
ISO=1mA  
ISO=-1mA  
VDD-0.6 VDD-0.3  
Serial out output leak current  
[Protect circuit]  
ISO(OFF)  
-5  
0
5
μA  
Over current detection current  
IOCP(ON)  
IOCP(OFF)  
tOCP  
1.00  
0.70(1)  
50  
1.80  
1.26(1)  
250  
3.00  
2.10(1)  
600  
A
A
Over current release current  
Over current detection time  
Open Load release voltage  
μs  
V
VOLD(ON)  
0.70  
1.50  
2.70  
INn(2)=0V  
INn(2)=0V  
INn(2)=0V  
Open load detection threshold  
voltage  
VOLD(OFF)  
tOLD  
1.00  
50  
1.75  
300  
3.00  
600  
V
Open load detection time  
μs  
(1) Not 100% tested  
(2) n means ch number  
Definition  
Figure 1. Definition  
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Measurement Circuit  
Figure 2. Output ON Resistance Measuring  
Figure 3. Switching Time Measuring Circuit  
Circuit Diagram  
Diagram  
Figure 4. Output Clamp Voltage Measuring  
Circuit Diagram  
Figure 5. Open Detection Measuring Circuit  
Diagram  
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DIR(Direct)mode Diagnostic Output Truth Table  
OUTPUT  
VIN  
Tj  
mode  
VSO  
L
Output state  
VDS  
ID  
ID 1.8A(Typ)  
Normal  
ON  
Tj < 175°C(Typ)  
Tj 175°C(Typ)  
-
Over current  
detection  
H
ID > 1.8A(Typ)  
H
OFF  
OFF  
OFF  
Thermal shut  
down  
-
-
-
H
H
Normal  
L
(3.0Vor more)  
L
-
L
Open load  
detection  
(1.5V(Typ) or  
less)  
-
H
OFF  
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Characteristic Data (Reference Data) (VDD=5V, VDDA=5V, IN=5V, Tj=25°C unless otherwise is specified)  
1200  
1100  
1000  
900  
800  
1200  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
700  
600  
500  
400  
300  
200  
100  
0
-50 -25  
0
25 50 75 100 125 150  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
Tj [°C]  
VDD ,VDDA[V]  
Figure 6. Output ON Resistance Characteristic  
[Temperature Characteristic]  
Figure 7. Output ON Resistance Characteristic  
[Source Voltage Characteristic]  
10  
10  
8
6
4
2
0
8
6
4
2
0
0.0  
1.0  
2.0  
3.0  
VDD [V]  
Figure 8. Standby Current Characteristic (VDD)  
4.0  
5.0  
6.0  
7.0  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
VDDA[V]  
Figure 9. Standby Current Characteristic (VDDA)  
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20.0  
10.0  
0.0  
70.0  
60.0  
50.0  
40.0  
30.0  
20.0  
10.0  
0.0  
-10.0  
-20.0  
-30.0  
-40.0  
-50.0  
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
VCS_B [V]  
VIN [V]  
Figure 11. Input current Characteristic (CS_B)  
Figure 10. Input current Characteristic  
(IN1 to 4, DIR, SCLK, SI, RST_B)  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
100.0  
90.0  
80.0  
70.0  
60.0  
50.0  
40.0  
30.0  
20.0  
10.0  
0.0  
VINH  
VINL  
-50 -25  
0
25 50 75 100 125 150  
Tj [°C]  
-50 -25  
0
25 50 75 100 125 150  
Tj [°C]  
Figure 12. Input current Characteristic  
Figure 13. Input Voltage Threshold Characteristic  
[Temperature Characteristic]  
[Temperature Characteristic]  
(IN1 to 4, DIR, SCLK, SI, RST_B=5V, CS_B=0V)  
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45.0  
40.0  
35.0  
30.0  
25.0  
20.0  
15.0  
10.0  
5.0  
45.0  
40.0  
35.0  
30.0  
25.0  
20.0  
15.0  
10.0  
5.0  
0.0  
0.0  
-50 -25  
0
25 50 75 100 125 150  
Tj [°C]  
-50 -25  
0
25 50 75 100 125 150  
Tj [°C]  
Figure 14. Switching Time (tON  
[Temperature Characteristic]  
)
Figure 15. Switching Time (tOFF  
[Temperature Characteristic]  
)
2.0  
1.5  
1.0  
0.5  
0.0  
2.0  
1.5  
1.0  
0.5  
0.0  
-50 -25  
0
25 50 75 100 125 150  
Tj [°C]  
-50 -25  
0
25 50 75 100 125 150  
Tj [°C]  
Figure 16. Slew Rate (at ON)  
[Temperature Characteristic]  
Figure 17. Slew Rate (at OFF)  
[Temperature Characteristic]  
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50.0  
40.0  
30.0  
20.0  
10.0  
0.0  
10.0  
8.0  
6.0  
4.0  
2.0  
0.0  
-50 -25  
0
25 50 75 100 125 150  
Tj [°C]  
-50 -25  
0
25 50 75 100 125 150  
Tj [°C]  
Figure 19. Output Leak Current (Open detect)  
[Temperature Characteristic](VDS=40V)  
Figure 18. Output Leak Current  
[Temperature Characteristic](VDS=30V)  
Switching Time Measurement  
Timing Chart with Inductive Load  
Figure 21. Timing Chart with inductive Load  
Figure 20. Switching Time  
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I/O Equivalent Circuits  
Pin  
Symbol  
I/O Equivalent Circuits  
1,2,  
11,12  
GND  
OUT1 to OUT8  
VDD  
x 9  
x 2  
3 to 10  
13  
IN4(IN8),  
IN3(IN7),  
IN2(IN6),  
IN1(IN5),  
DIR,  
SCLK(IN4),  
RST_B(IN3),  
SI(IN2)  
IN4(IN8),  
IN3(IN7),  
IN2(IN6),  
IN1(IN5),  
DIR,  
SCLK(IN4),  
RST_B(IN3),  
SI(IN2)  
50  
14 to 17  
18  
20 to 22  
100kΩ  
50Ω  
19  
SO  
100kΩ  
1kΩ  
50Ω  
23  
CS_B  
100kΩ  
24  
VDDA  
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SPI mode(DIR=L)  
When CS_B=H,  
OR signal (ERR) of SI and abnormal signal (TER, TSD, OCP, OLD) is output to SO terminal.  
When CS_B=L,  
Internal state (TSD, OCP, OLD) is latched at falling edge of CS_B, and output to SO at rising edge of SCLK.  
SI is taken in register at falling edge of SCLK.  
Output corresponding to each resister input is controlled at rising edge of CS_B.  
Definitions of SI and SO signals are shown below.  
SI signals  
Initial:0x0000  
States of output and protective circuits  
Bits  
INn  
00  
Output  
OFF  
OCP  
TSD  
OLD  
disable  
disable  
disable  
15:14,  
13:12,  
11:10,  
9:8,  
7:6,  
5:4,  
01  
ON/OFF (1)  
ON  
enable/disable enable/disable disable/enable  
10  
11  
enable  
disable  
enable  
disable  
disable  
enable  
3:2,  
1:0  
OFF  
(1) When INn=01, output is controlled by IN terminal.  
Output controlled by each input is shown below.  
Input  
Controlled output  
OUT1  
IN1(IN5)  
IN2(IN6)  
IN3(IN7)  
IN4(IN8)  
IN1(IN5)  
IN2(IN6)  
IN3(IN7)  
IN4(IN8)  
OUT2  
OUT3  
OUT4  
OUT5  
OUT6  
OUT7  
OUT8  
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SO signals  
When CS_B=H,  
OR signal (ERR) of abnormal signal (SI, TER, TSD, OCP, OLD) is output to SO terminal.  
When CS_B=L,  
Explanation of each Bit is shown below.  
Bits  
Data  
STAE  
0
1
0
1
0
1
Correspondence just after reset and normal operation  
Correspondence error of last time  
Normal operation  
(1)  
16  
15,13,11  
9,7,5  
Load open  
3,1  
14,12  
10,8,6  
4,2,0  
Normal operation  
OCP or TSD  
(1) TER bit outputs logical sums of TER signal and input signal of this device with SI signal in the interval from fall of CS_B to  
rise of SCLK as shown below.  
Block diagram and timing chart are shown below.  
CS_B  
SCLK  
S
TER  
MSB  
14  
13  
12  
11  
10  
9
8
7
6
5
4
3
2
1
LSB  
SO  
In order to select whether TER signal is output or SPI data output (OLn, Dn) signal is output, “S” signal is generated within IC  
and output is switched.  
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Plurality of devices can be connected as shown in the diagram below.  
CS_B signal and SCLK signal connects common signal.  
SI/SO line can connect SO of Device 1 to SI of Device 2 as shown in the diagram below.  
Timing chart when 8 devices are connected is shown below.  
Figure 22. Timing chart when 8 devices are connected  
SPI RST_B releasing sequence  
Figure 23. RST_B Releasing Sequence  
Item  
Signal  
Minimum Standard Minimum  
Unit  
RST_B lead time(1) ( 2)  
CS_B enable time(1)  
tRST_B (lead)  
tCS_B (en)  
1
10  
-
-
-
-
ms  
μs  
(1) Not 100% tested  
(2) RST_B L time and H time must be over 10μs  
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SPI timing chart  
Figure 24. SPI Timing Chart  
Item  
Signal  
Minimum Standard Minimum  
Unit  
SCLK frequency  
fSCLK  
TSCLK(P)  
TSCLK(H)  
TSCLK(L)  
TSCLK(su)  
TSCLK(hd)  
TCS_B(lead)  
TCS_B(lag)  
TCS_B(td)  
TSI(su)  
0
5
MHz  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
SCLK cycle length  
SCLK high time  
200  
50  
SCLK lo time  
50  
SCLK setup time  
50  
SCLK hold time  
50  
CS_B lead time  
250  
250  
250  
20  
CS_B lag time  
Transfer delay time  
Data setup time  
Data hold time  
TSI(h)  
20  
SPI Output enable time(1)  
SPI Output disable time(1)  
SPI Output Data delay time(1)  
ERR Output Through delay time(1)  
TSO(en)  
200  
250  
100  
200  
TSO(dis)  
TSO(dd)  
TSO(td)  
(1) Not 100% tested. When SO terminal capacity=10pF.  
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DIR (direct) mode  
Transition to direct mode is brought about by switching DIR terminal to High.  
Output controlled for each input is shown below.  
Further, SPI input and RST_B input are not accepted during direct mode.  
Input  
CS_B(IN1)  
SI(IN2)  
Controlled Output  
OUT1  
OUT2  
RST_B(IN3)  
SCLK(IN4)  
IN1(IN5)  
IN2(IN6)  
IN3(IN7)  
IN4(IN8)  
OUT3  
OUT4  
OUT5  
OUT6  
OUT7  
OUT8  
DIR (direct) mode timing chart (1)  
Figure 25. DIR Mode Timing Chart (1)  
Item  
Signal  
Minimum Standard Minimum  
Unit  
DIR lead time(1)  
INn enable time(1)  
tDIR(lead)  
tINn (en)  
1
10  
-
-
-
-
ms  
μs  
(1) Not 100% tested.  
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DIR (direct) mode timing chart (2)  
(1) OCP is internal signal of device  
Figure 26. DIR Mode Timing Chart (2)  
Direct mode operation current (IDDA + IDD) state transition  
All CH off  
1CH on  
Figure 27. Operation Current State Transition Diagram  
All CH off  
All CH on (2)  
(2) Sum of P.4 VDDA operation current (when all outputs are on) and VDD operation current (when all outputs are on).  
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Power source ON/OFF sequence  
(3)  
VDD  
(3)  
VDD  
VDDA  
VDDA  
(1)tON > 0s  
(1)  
(2)tOFF > 0s  
(2)  
tOFF  
tON  
(3)VDD < VDDA+0.3V  
Figure 28. Power Source ON/OFF Sequence  
Detection functions  
Overcurrent protection  
When current of no less than 1.8 A (Typ) is flown in output transistor of from OUT1 to OUT8 in 250 μs (Typ), error flag is  
output.  
Figure 29. Overcurrent Protection Timing Chart  
Overheat protection  
Junction temperature of from OUT1 to OUT8 reaches 175°C (Typ) or above, output is turned off.  
It is automatically turned on at 150°C (Typ) or below  
Figure 30. Overheat Protection Timing Chart  
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Open detection  
In case of enable at Open detection function(1), when output current of from OUT1 to OUT8 falls below 1.5 V (Typ), open  
detection is detected and error flag is output.  
(1) As for the DIR mode, OLDENn=H(open detection function becomes effective) in OUTENn =L.  
As for the SPI mode, Please refer to “SI Signals” ( Page 13/24).  
“n” shows the channel number.  
Figure 31. Open Detection Protection Timing Chart  
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Physical Dimension, Tape and Reel Information  
Package Name  
SSOP-A24  
<Tape and Reel information>  
Tape  
Embossed carrier tape  
2000pcs  
Quantity  
E2  
Direction  
of feed  
The direction is the 1pin of product is at the upper left when you hold  
reel on the left hand and you pull out the tape on the right hand  
(
)
Direction of feed  
1pin  
Reel  
Order quantity needs to be multiple of the minimum quantity.  
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Operational Notes  
1) Absolute Minimum Ratings  
Operating the IC over the absolute Minimum ratings may damage the IC. In addition, it is impossible to predict all  
destructive situations such as short-circuit modes or open circuit modes. Therefore, it is important to consider circuit  
protection measures, like adding a fuse, in case the IC is expected to be operated in a special mode exceeding the  
absolute Minimum ratings.  
2) Reverse connection of power supply  
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when  
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply  
terminals.  
3) Power supply lines  
Design the PCB layout pattern to provide low impedance ground and supply lines. Separate the ground and  
supply lines of the digital and analog blocks to prevent noise in the ground and supply lines of the digital block from  
affecting the analog block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of  
temperature and aging on the capacitance value when using electrolytic capacitors.  
4)  
5)  
Source (GND) Voltage  
The voltage of the Source (GND) pin must be the lowest voltage of all pins of the IC at all operating conditions. Ensure  
that no pins are at a voltage below the ground pin at any time, even during transient condition.  
Thermal consideration  
Use a thermal design that allows for a sufficient margin by taking into account the permissible power dissipation (Pd) in  
actual operating conditions. Consider Pc that does not exceed Pd in actual operating conditions (PcPd).  
Package Power dissipation : Pd (W)=(TjmaxTa)/θja  
Power dissipation  
: Pc (W)=(VccVo)×Io+Vcc×Ib  
Tjmax : Minimum junction temperature=150°C, Ta : Peripheral temperature[°C] ,  
θja : Thermal resistance of package-ambience[°C /W], Pd : Package Power dissipation [W],  
Pc : Power dissipation [W], Vcc : Input Voltage, Vo : Output Voltage, Io : Load, Ib : Bias Current  
6)  
7)  
8)  
Short between pins and mounting errors  
Be careful when mounting the IC on printed circuit boards. The IC may be damaged if it is mounted in a wrong  
orientation or if pins are shorted together. Short circuit may be caused by conductive particles caught between the pins.  
Operation Under Strong Electromagnetic Field  
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.  
Thermal shutdown circuit (TSD)  
The IC incorporates a built-in thermal shutdown circuit, which is designed to turn off the IC when the internal  
temperature of the IC reaches 175°C (25°C hysteresis). It is not designed to protect the IC from damage or guarantee  
its operation. Do not continue to operate the IC after this function is activated. Do not use the IC in conditions where  
this function will always be activated.  
9)  
Over voltage protection (active clamp)  
There is a built-in over voltage protection circuit (active clamp) to absorb the induced current when inductive load is off  
(Power MOS = off). During active clamp and when IN=0V, TSD will not function so keep IC temperature below 150°C.  
10)  
Over current protection circuit (OCP)  
The IC incorporates an over-current protection circuit that operates in accordance with the rated output capacity. This  
circuit protects the IC from damage when the load becomes shorted. It is also designed to limit the output current  
(without latching) in the event of more than 1.5A (Typ) flow, such as from a large capacitor or other component  
connected to the output pin. This protection circuit is effective in preventing damage to the IC in cases of sudden and  
unexpected current surges. The IC should not be used in applications where the over current protection circuit will be  
activated continuously.  
11) Testing on application boards  
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject  
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should  
always be turned off completely before connecting or removing it from the test setup during the inspection process. To  
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and  
storage.  
12) Regarding input pins of the IC  
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them  
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a  
parasitic diode or transistor. For example (refer to figure below):  
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When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.  
When GND > Pin B, the P-N junction operates as a parasitic transistor.  
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual  
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to  
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be  
avoided.  
Resistor  
Transistor (NPN)  
Pin A  
Pin B  
Pin B  
B
C
E
Pin A  
B
C
E
N
P+  
P+  
P+  
N
N
P+  
Parasitic  
P
N
P
N
N
P substrate  
P substrate  
Parasitic  
GND  
GND  
GND  
GND  
Parasitic element  
Parasitic element  
Other adjacent elements  
Example of monolithic IC structure  
13)  
GND wiring pattern  
When using both small-signal and large-current GND traces, the two ground traces should be routed separately but  
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal  
ground caused by large currents. Also ensure that the GND traces of external components do not cause variations on  
the GND voltage. The power supply and ground lines must be as short and thick as possible to reduce line impedance.  
14) Back electromotive force (BEMF)  
There is a possibility that the BEMF is changed by using the operating condition, environment and the individual  
characteristics of motor. Please make sure there is no problem when operating the IC even though the BEMF is  
changed.  
15)  
Rush Current  
When power is supplied to the IC, inrush current may flow instantaneously. It is possible that the charge current from  
the parasitic capacitance of the internal logic may be unstable. Therefore, give a special consideration with the power  
coupling capacitance, power wiring, width of GND wiring, and routing of connections.  
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Revision History  
Date  
Revision  
002  
Changes  
New Release  
06.Sep.2013  
03.Apr.2015  
08.Jun.2017  
P1 Add “AEC-Q100 qualified” to Features  
P3 active clamp energy condition added  
P4 Limit(Typ) of VDDA Operating current changed  
P4 Limit values of L level input current 2(CS_B) changed  
P5 Condition of “Open Load release voltage”, “Open load detection threshold voltage” and  
“Open load detection time” added  
P6 Modify Figure 5.  
P7 Modify DIR(Direct)mode Diagnostic Output Truth Table  
P9 Characteristic Data of L level input current 2(CS_B) changed  
P11 Timing Chart with Inductive Load changed  
P12 I/O Equivalent Circuits changed  
P13 initial value of INn added  
P15 add note to SPI RST_B sequence  
P16 SPI timing chart and add note changed  
P17 DIR (direct) mode timing chart (1) and note changed  
P18 Figure 26. and note changed  
003  
P18 Figure 27. changed  
P19 timing chart of Overcurrent protection and Overheat protection changed  
explanation of error flag release changed  
P20 Open detection changed  
P22 “7) Operation Under Strong Electromagnetic Field” added  
P23 “15) FIN” deleted  
Whole page all unit changed to SI unit  
P4 Max value of PWM Output range was changed from 5kHz to 1.2kHz.  
P4 “DIR=5V” was removed at Condition of PWM Output range.  
004  
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Notice  
Precaution on using ROHM Products  
(Note 1)  
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment  
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,  
bodily injury or serious damage to property (Specific Applications), please consult with the ROHM sales  
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way  
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any  
ROHMs Products for Specific Applications.  
(Note1) Medical Equipment Classification of the Specific Applications  
JAPAN  
USA  
EU  
CHINA  
CLASS  
CLASSⅣ  
CLASSb  
CLASSⅢ  
CLASSⅢ  
CLASSⅢ  
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor  
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate  
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which  
a failure or malfunction of our Products may cause. The following are examples of safety measures:  
[a] Installation of protection circuits or other protective devices to improve system safety  
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure  
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.  
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the  
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our  
Products under any special or extraordinary environments or conditions (as exemplified below), your independent  
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:  
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents  
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust  
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,  
H2S, NH3, SO2, and NO2  
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves  
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items  
[f] Sealing or coating our Products with resin or other coating materials  
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of  
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning  
residue after soldering  
[h] Use of the Products in places subject to dew condensation  
4. The Products are not subject to radiation-proof design.  
5. Please verify and confirm characteristics of the final or mounted products in using the Products.  
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,  
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power  
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect  
product performance and reliability.  
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in  
the range that does not exceed the maximum junction temperature.  
8. Confirm that operation temperature is within the specified range described in the product specification.  
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in  
this document.  
Precaution for Mounting / Circuit board design  
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product  
performance and reliability.  
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must  
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,  
please consult with the ROHM representative in advance.  
For details, please refer to ROHM Mounting specification  
Notice-PAA-E  
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Precautions Regarding Application Examples and External Circuits  
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the  
characteristics of the Products and external components, including transient characteristics, as well as static  
characteristics.  
2. You agree that application notes, reference designs, and associated data and information contained in this document  
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely  
responsible for it and you must exercise your own independent verification and judgment in the use of such information  
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses  
incurred by you or third parties arising from the use of such information.  
Precaution for Electrostatic  
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper  
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be  
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,  
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).  
Precaution for Storage / Transportation  
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:  
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2  
[b] the temperature or humidity exceeds those recommended by ROHM  
[c] the Products are exposed to direct sunshine or condensation  
[d] the Products are exposed to high Electrostatic  
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period  
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is  
exceeding the recommended storage time period.  
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads  
may occur due to excessive stress applied when dropping of a carton.  
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of  
which storage time is exceeding the recommended storage time period.  
Precaution for Product Label  
A two-dimensional barcode printed on ROHM Products label is for ROHMs internal use only.  
Precaution for Disposition  
When disposing Products please dispose them properly using an authorized industry waste company.  
Precaution for Foreign Exchange and Foreign Trade act  
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign  
trade act, please consult with ROHM in case of export.  
Precaution Regarding Intellectual Property Rights  
1. All information and data including but not limited to application example contained in this document is for reference  
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any  
other rights of any third party regarding such information or data.  
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the  
Products with other articles such as components, circuits, systems or external equipment (including software).  
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any  
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM  
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to  
manufacture or sell products containing the Products, subject to the terms and conditions herein.  
Other Precaution  
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.  
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written  
consent of ROHM.  
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the  
Products or this document for any military purposes, including but not limited to, the development of mass-destruction  
weapons.  
4. The proper names of companies or products described in this document are trademarks or registered trademarks of  
ROHM, its affiliated companies or third parties.  
Notice-PAA-E  
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General Precaution  
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.  
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny  
ROHM’s Products against warning, caution or note contained in this document.  
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior  
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s  
representative.  
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all  
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or  
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or  
concerning such information.  
Notice – WE  
Rev.001  
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BD900

PNP SILICON POWER DARLINGTONS
POINN

BD900

PNP SILICON POWER DARLINGTONS
BOURNS

BD900

Silicon PNP Power Transistors
ISC

BD900

SILICON DARLINGTON POWER TRANSISTORS
COMSET

BD90016

8A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
MOTOROLA

BD90016A

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA

BD9001F

Flexible Step-Down Switching Regulator
ROHM