BD9A302QWZ [ROHM]

BD9A302QWZ是内置低导通电阻的功率MOSFET的同步整流降压型DC/DC转换器。最大可输出3A的电流。凭借SLLM™控制,在轻负载时进行低功耗工作,适用于要降低待机功耗的设备。振荡频率1MHz的高速产品,适用于小型电感。是电流模式控制DC/DC转换器,具有高速负载响应性能,可轻松设定相位补偿。;
BD9A302QWZ
型号: BD9A302QWZ
厂家: ROHM    ROHM
描述:

BD9A302QWZ是内置低导通电阻的功率MOSFET的同步整流降压型DC/DC转换器。最大可输出3A的电流。凭借SLLM™控制,在轻负载时进行低功耗工作,适用于要降低待机功耗的设备。振荡频率1MHz的高速产品,适用于小型电感。是电流模式控制DC/DC转换器,具有高速负载响应性能,可轻松设定相位补偿。

转换器
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Datasheet  
2.7V to 5.5V Input, 3A Integrated MOSFET  
Single Synchronous Buck DC/DC Converter  
BD9A302QWZ  
General Description  
Key Specifications  
BD9A302QWZ is  
a
synchronous buck DC/DC  
Input Voltage Range:  
Output Voltage Range:  
Output Current:  
Switching Frequency:  
High-Side MOSFET ON-Resistance: 50mΩ (Typ)  
Low-Side MOSFET ON-Resistance: 50mΩ (Typ)  
2.7V to 5.5V  
0.8V to VIN x 0.7V  
3A(Max)  
converter with built-in low on-resistance power  
MOSFETs. This IC is capable of providing current up  
to 3A. The SLLMTM control provides excellent  
efficiency characteristics in light-load conditions which  
make the product ideal for equipment and devices that  
demand minimal standby power consumption. The  
oscillating frequency is high at 1MHz using a small  
value of inductor. BD9A302QWZ is a current mode  
control DC/DC converter and features high-speed  
transient response. Phase compensation can also be  
set easily.  
1MHz(Typ)  
Standby Current:  
0μA (Typ)  
Package  
UMMP008AZ020  
W (Typ) x D (Typ) x H (Max)  
2.00mm x 2.00mm x 0.40mm  
Features  
Single Synchronous Buck DC/DC Converter  
SLLMTM (Simple Light Load Mode) Control  
Over Current Protection  
Short Circuit Protection  
Thermal Shutdown Protection  
Under Voltage Lockout Protection  
UMMP008AZ020 Package  
(Backside Heat Dissipation)  
Applications  
UMMP008AZ020  
Step-Down Power Supply for DSPs,  
FPGAs, Microprocessors, etc.  
Laptop PCs / Tablet PCs / Servers  
LCD TVs  
Storage Devices (HDDs/SSDs)  
Printers, OA Equipment  
Distributed Power Supplies,  
Secondary Power Supplies  
Typical Application Circuit  
BD9A302QWZ  
VIN  
VIN  
BST  
SW  
MODE  
Enable  
MODE  
EN  
0.1µF  
1.5µH  
10µF  
0.1µF  
VOUT  
ITH  
22µF×2  
R2  
R1  
FB  
RITH  
CITH  
GND  
Figure 1. Application Circuit  
Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays  
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Pin Configuration  
(TOP VIEW)  
VIN  
1
8
GND  
E-PAD  
EN  
BST  
SW  
2
3
4
7
6
5
FB  
ITH  
MODE  
Figure 2. Pin Configuration  
Pin Descriptions  
Pin No.  
1
Pin Name  
Function  
Power supply terminal for the switching regulator and control circuit.  
Connecting 10µF and 0.1µF ceramic capacitors are recommended.  
VIN  
EN  
Enable terminal.  
Turning this terminal signal Low (0.8V or lower) forces the device to enter the shutdown mode.  
Turning this terminal signal High (2.0V or higher) enables the device. The EN terminal must be  
properly terminated.  
2
3
Terminal for bootstrap.  
BST  
Connect a bootstrap capacitor of 0.1µF between this terminal and SW terminal.  
The voltage of the bootstrap capacitor is the gate drive voltage of the High-Side MOSFET.  
Switch terminal. The SW terminal is connected to the source of the High-Side MOSFET and  
drain of the Low-Side MOSFET. Connect a bootstrap capacitor of 0.1µF between the SW  
terminal and BST terminal. In addition, connect an inductor of 1.5µH considering the direct  
current superimposition characteristic.  
4
5
SW  
Terminal for setting switching control mode. Turning this terminal signal Low (0.2V or lower)  
forces the device to operate in fixed frequency PWM mode. Turning this terminal signal High  
(0.8V or higher) enables the SLLM control and the mode is automatically switched between  
SLLM control and fixed frequency PWM mode. Do not change this terminal voltage during  
operation.  
MODE  
Terminal for the output of the error amplifier and the input of the current comparator.  
Connect phase compensation components to this terminal.  
6
7
8
-
ITH  
FB  
Inverting input terminal for the error amplifier.  
GND  
E-PAD  
Ground terminal for the output stage of the switching regulator and the control circuit.  
Backside heat dissipation pad. Connecting to the PCB ground plane by using multiple vias  
provides excellent heat dissipation characteristics.  
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Block Diagram  
VIN  
1
MODE  
EN  
5
Current  
Comparator  
2
VREF  
Error  
Amplifier  
BST  
SW  
R
S
Q
3
4
Current  
Sense/  
Protect  
FB  
7
SLOPE  
CLK  
+
OSC  
VIN  
Driver  
Logic  
VIN  
Soft  
Start  
UVLO  
SCP  
OVP  
TSD  
ITH  
6
GND  
8
Figure 3. Block Diagram  
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Description of Blocks  
1. VREF  
The VREF block generates the internal reference voltage.  
2. UVLO  
The UVLO block is for under voltage lockout protection. It will shut down the IC when the VIN terminal voltage falls to  
2.45V (Typ) or lower. The threshold voltage has a hysteresis of 100mV (Typ).  
3. SCP  
After the soft start is completed and when the feedback voltage of the output voltage has fallen below 0.4V (Typ) for  
1ms (Typ), the SCP stops the operation for 16ms (Typ) and subsequently initiates restart.  
4. OVP  
The over voltage protection function (OVP) compares the FB terminal voltage with the internal reference voltage. When  
the FB terminal voltage exceeds 0.88V (Typ), it turns the output MOSFETs off. The output voltage returns with  
hysteresis after the output voltage drops to normal operation level.  
5. TSD  
The TSD block is for thermal protection. The thermal protection circuit shuts down the device when the internal  
temperature of IC rises to 175C (Typ) or higher. Thermal protection circuit resets when the temperature falls. The  
circuit has a hysteresis of 25°C (Typ).  
6. Soft Start  
When EN terminal is switched High, Soft Start operates and the output voltage gradually rises. With the Soft Start  
Function, overshoot of output voltage and rush current can be prevented. The internal soft start time is set to 1ms  
(Typ).  
7. Error Amplifier  
The error amplifier block compares the internal reference voltage with the feedback voltage of the output voltage. The  
error and the ITH terminal voltage determine the switching duty. A soft start is applied at startup. The ITH terminal  
voltage is limited by the internal slope voltage.  
8. Current Comparator  
The Current Comparator block compares the output ITH terminal voltage of the error amplifier and the slope block  
signal to determine the switching duty. In the event of over current, the current that flows through the High-Side  
MOSFET is limited at each cycle of the switching frequency.  
9. OSC  
This block is the oscillator.  
10. Driver Logic  
This block is the DC/DC driver. A signal from current comparator is applied to drive the MOSFETs.  
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Absolute Maximum Ratings (Ta = 25°C)  
Parameter  
Symbol  
Rating  
Unit  
Input Voltage  
VIN  
VEN  
-0.3 to +7  
-0.3 to +7  
-0.3 to +7  
-0.3 to +14  
-0.3 to +7  
-0.3 to +7  
-0.3 to +7  
-0.3 to VIN + 0.3  
-55 to +150  
150  
V
V
EN Terminal Voltage  
MODE Terminal Voltage  
Voltage from GND to BST  
Voltage from SW to BST  
FB Terminal Voltage  
VMODE  
VBST  
ΔVBST  
VFB  
V
V
V
V
ITH Terminal Voltage  
VITH  
V
SW Terminal Voltage  
VSW  
V
Storage Temperature Range  
Tstg  
°C  
Maximum Junction Temperature  
Tjmax  
°C  
Caution1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit  
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over  
the absolute maximum ratings.  
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the  
properties of the chip. In case of exceeding this absolute maximum rating, increase the board size and copper area to prevent exceeding the maximum  
junction temperature rating.  
Thermal Resistance (Note 1)  
Thermal Resistance (Typ)  
Parameter  
Symbol  
Unit  
1s(Note 3)  
2s2p(Note 4)  
UMMP008AZ020  
Junction to Ambient  
Junction to Top Characterization Parameter(Note 2)  
θJA  
376.0  
92.0  
67.8  
18.0  
°C/W  
°C/W  
ΨJT  
(Note 1) Based on JESD51-2A (Still-Air)  
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside  
surface of the component package.  
(Note 3) Using a PCB board based on JESD51-3.  
Layer Number of  
Measurement Board  
Material  
FR-4  
Board Size  
Single  
114.3mm x 76.2mm x 1.57mmt  
Top  
Copper Pattern  
Thickness  
Footprints and Traces  
70μm  
(Note 4) Using a PCB board based on JESD51-5, 7.  
Layer Number of  
Material  
Thermal Via(Note 5)  
Pitch Diameter  
Φ0.30mm  
Board Size  
114.3mm x 76.2mm x 1.6mmt  
2 Internal Layers  
Measurement Board  
4 Layers  
FR-4  
-
Top  
Bottom  
Copper Pattern  
Thickness  
Copper Pattern  
Thickness  
Copper Pattern  
Thickness  
70μm  
Footprints and Traces  
70μm  
74.2mm x 74.2mm  
35μm  
74.2mm x 74.2mm  
(Note 5) This thermal via connects with the copper pattern of all layers.  
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Recommended Operating Conditions  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
Input Voltage  
VIN  
Topr  
2.7  
-40  
0
-
-
-
-
5.5  
+85  
V
°C  
A
Operating Temperature Range  
Output Current  
IOUT  
3
Output Voltage Range  
VRANGE  
0.8  
VIN x 0.7  
V
Electrical Characteristics (Unless otherwise specified Ta = 25°C, VIN = 5V, VEN = 5V)  
Parameter  
INPUT SUPPLY  
Symbol  
Min  
Typ  
Max  
Unit  
Conditions  
Standby Supply Current  
Operating Supply Current  
ISTB  
ICC  
VUVLO1  
VUVLO2  
-
-
0
10  
µA  
µA  
VEN = GND  
IOUT = 0mA  
Non-switching  
350  
500  
UVLO Detection Voltage  
UVLO Release Voltage  
ENABLE  
2.35  
2.45  
2.55  
2.55  
2.7  
V
V
VIN Falling  
VIN Rising  
2.425  
EN Input High Level Voltage  
EN Input Low Level Voltage  
EN Input Current  
VENH  
VENL  
IEN  
2.0  
GND  
-
-
-
VIN  
0.8  
10  
V
V
5
µA  
VEN = 5V  
MODE  
MODE Threshold Voltage  
MODE Input Current  
Reference Voltage, Error Amplifier  
FB Terminal Voltage  
FB Input Current  
VMODEH  
IMODE  
0.2  
-
0.4  
10  
0.8  
20  
V
µA  
VMODE = 5V  
VFB  
IFB  
0.792  
-
0.8  
0
0.808  
1
V
µA  
µA  
µA  
ms  
VFB = 0.8V  
VFB = 0.9V  
VFB = 0.7V  
ITH Sink Current  
ITHSI  
ITHSO  
tSS  
10  
20  
20  
1.0  
40  
ITH Source Current  
10  
40  
Soft Start Time  
0.5  
2.0  
SWITCHING FREQUENCY  
Switching Frequency  
SWITCH MOSFET  
fOSC  
800  
1000  
1200  
kHz  
High Side FET ON Resistance  
Low Side FET ON Resistance  
High Side Output Leakage Current  
Low Side Output Leakage Current  
SCP  
RONH  
RONL  
ILH  
-
-
-
-
50  
50  
0
100  
100  
10  
mΩ  
mΩ  
µA  
VBST VSW = 5V  
Non-switching  
Non-switching  
ILL  
0
10  
µA  
Short Circuit Protection Detection  
Voltage  
VSCP  
0.28  
0.4  
0.52  
V
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Typical Performance Curves  
10.0  
9.0  
8.0  
7.0  
6.0  
5.0  
4.0  
3.0  
500  
400  
300  
200  
100  
0
VIN = 5.0V  
VIN = 2.7V  
VIN = 5.0V  
VIN = 2.7V  
2.0  
1.0  
0.0  
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
40  
60  
80  
Temperature [°C]  
Temperature [°C]  
Figure 4. Standby Supply Current vs Temperature  
Figure 5. Operating Supply Current vs Temperature  
1.20  
1.15  
1.10  
1.05  
1.00  
0.95  
0.90  
0.85  
0.80  
0.808  
0.806  
0.804  
0.802  
0.800  
0.798  
0.796  
0.794  
0.792  
VIN = 2.7V  
VIN = 2.7V  
VIN = 5.0V  
VIN = 5.0V  
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
40  
60  
80  
Temperature [°C]  
Temperature [°C]  
Figure 6. Switching Frequency vs Temperature  
Figure 7. FB Terminal Voltage vs Temperature  
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Typical Performance Curves - continued  
40  
35  
30  
40  
35  
30  
25  
20  
15  
10  
VIN = 5.0V  
VIN = 5.0V  
25  
20  
15  
10  
VIN = 2.7V  
VIN = 2.7V  
40  
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
60  
80  
Temperature [°C]  
Temperature [°C]  
Figure 8. ITH Sink Current vs Temperature  
Figure 9. ITH Source Current vs Temperature  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
20  
18  
16  
14  
12  
10  
8
VIN = 5.0V  
VMODE = 5.0V  
6
4
VMODE = 2.7V  
2
0
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
40  
60  
80  
Temperature [°C]  
Temperature [°C]  
Figure 10. MODE Threshold Voltage vs Temperature  
Figure 11. MODE Input Current vs Temperature  
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Typical Performance Curves - continued  
2.0  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VIN = 2.7V  
1.5  
VIN = 2.7V  
1.0  
VIN = 3.3V  
VIN = 5.0V  
VIN = 5.0V  
0.5  
0.0  
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
40  
60  
80  
Temperature [°C]  
Temperature [°C]  
Figure 12. Soft Start Time vs Temperature  
Figure 13. High Side FET ON Resistance vs Temperature  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.9  
2.8  
VIN = 2.7V  
2.7  
Release (VIN Rising)  
2.6  
2.5  
2.4  
VIN = 5.0V  
VIN = 3.3V  
2.3  
2.2  
2.1  
2.0  
Detect (VIN Falling)  
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
40  
60  
80  
Temperature [°C]  
Temperature [°C]  
Figure 15. UVLO Detection / Release Voltage  
vs Temperature  
Figure 14. Low Side FET ON Resistance vs Temperature  
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Typical Performance Curves - continued  
2.0  
10.0  
9.0  
8.0  
7.0  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
VIN = 5.0V  
1.8  
VEN = 5.0V  
Rising  
1.6  
1.4  
1.2  
Falling  
1.0  
0.8  
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
40  
60  
80  
Temperature [°C]  
Temperature [°C]  
Figure 16. EN Threshold Voltage vs Temperature  
Figure 17. EN Input Current vs Temperature  
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Typical Performance Curves (Application)  
100  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
MODE = H  
MODE = H  
90  
80  
70  
60  
50  
MODE = L  
MODE = L  
40  
30  
20  
VIN = 5.0V  
VOUT = 1.8V  
VIN = 3.3V  
VOUT = 1.8V  
10  
0
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
Output Current : IOUT [A]  
Output Current : IOUT [A]  
Figure 19. Efficiency vs Output Current  
Figure 18. Efficiency vs Output Current  
(VIN = 3.3V, VOUT = 1.8V, L = 1.5μH)  
(VIN = 5V, VOUT = 1.8V, L = 1.5μH)  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VOUT = 1.2V  
VOUT = 3.3V  
VOUT = 1.8V  
VIN = 5.0V  
0
0.5  
1
1.5  
2
2.5  
3
Output Current : IOUT [A]  
Figure 20. Efficiency vs Output Current  
(VIN = 5.0V, VMODE = 5.0V, L = 1.5μH)  
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Typical Performance Curves (Application) - continued  
VIN = 5V/div  
VEN = 5V/div  
VIN = 5V/div  
VEN = 5V/div  
VOUT = 1V/div  
VOUT = 1V/div  
VSW = 5V/div  
Time = 1ms/div  
VSW = 5V/div  
Time = 1ms/div  
Figure 22. Shutdown Waveform (VIN = VEN  
)
Figure 21. Start-up Waveform (VIN = VEN  
)
(VOUT = 1.8V, VMODE = VIN, RLOAD = 0.6Ω)  
(VOUT = 1.8V, VMODE = VIN, RLOAD = 0.6Ω)  
VIN = 5V/div  
VEN = 5V/div  
VIN = 5V/div  
VEN = 5V/div  
VOUT = 1V/div  
VSW = 5V/div  
VOUT = 1V/div  
Time = 1ms/div  
VSW = 5V/div  
Time = 1ms/div  
Figure 23. Start-up Waveform (VEN = 0V to 5V)  
Figure 24. Shutdown Waveform (VEN = 5V to 0V)  
(VOUT = 1.8V, VMODE = VIN, RLOAD = 0.6Ω)  
(VOUT = 1.8V, VMODE = VIN, RLOAD = 0.6Ω)  
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Typical Performance Curves (Application) - continued  
VOUT = 20mV/div  
VOUT = 20mV/div  
VSW = 2V/div  
VSW = 2V/div  
Time = 5ms/div  
Time = 1µs/div  
Figure 26. Output Voltage Ripple  
Figure 25. Output Voltage Ripple  
(VIN = 5V, VOUT = 1.8V, VMODE = VIN, IOUT = 3A)  
(VIN = 5V, VOUT = 1.8V, VMODE = VIN, IOUT = 0A)  
VIN = 50mV/div  
VSW = 2V/div  
VIN = 50mV/div  
VSW = 2V/div  
Time = 1µs/div  
Time = 5ms/div  
Figure 27. Input Voltage Ripple  
Figure 28. Input Voltage Ripple  
(VIN = 5V, VOUT = 1.8V, VMODE = VIN, IOUT = 3A)  
(VIN = 5V, VOUT = 1.8V, VMODE = VIN, IOUT = 0A)  
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BD9A302QWZ  
Typical Performance Curves (Application) - continued  
1.0  
0.8  
1.0  
0.8  
0.6  
0.6  
0.4  
0.4  
0.2  
0.2  
0.0  
0.0  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
2.5  
3.0  
3.5  
Input Vol  
4.0  
tage
4.5  
5.0  
5.5  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
:
VIN [V]  
Output Current : IOUT [A]  
Figure 29. Line Regulation  
(VOUT = 1.8V, VMODE = VIN, IOUT=3A)  
Figure 30. Load Regulation  
(VIN = 5V, VOUT = 1.8V, VMODE = VIN)  
VOUT = 50mV/div  
VOUT = 50mV/div  
IOUT = 1A/div  
IOUT = 1A/div  
Time = 1ms/div  
Time = 1ms/div  
Figure 31. Load Transient Response  
IOUT = 0.75A - 2.25A  
Figure 32. Load Transient Response  
IOUT = 0A - 3A  
(VIN = 5V, VOUT = 1.8V, VMODE = VIN, COUT = 22μF x 2)  
(VIN = 5V, VOUT = 1.8V, VMODE = VIN, COUT = 22μF x 2)  
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BD9A302QWZ  
Application Information  
1. Function Explanations  
(1) Basic Operation  
(a) DC/DC Converter Operation  
BD9A302QWZ is a synchronous rectifying buck DC/DC converter that achieves fast load transient response  
by employing current mode control system. It utilizes switching operation in PWM (Pulse Width Modulation)  
mode for heavy load, while it utilizes SLLM (Simple Light Load Mode) control for light load to improve  
efficiency.  
SLLMTM Control  
PWM Control  
Output Current : IOUT [A]  
Figure 33. Efficiency (SLLMTM Control and PWM Control)  
SLLMTM Control  
PWM Control  
VOUT = 50mV/div  
VSW = 2V/div  
VOUT = 50mV/div  
VSW = 2V/div  
Time = 2µs/div  
Time = 2µs/div  
Figure 34. SW Waveform (SLLMTM Control)  
Figure 35. SW Waveform (PWM Control)  
(VIN = 5.0V, VOUT = 1.8V, VMODE = VIN, IOUT = 50mA)  
(VIN = 5.0V, VOUT = 1.8V, VMODE = VIN, IOUT = 1A)  
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(b) Enable Control  
The IC shutdown can be controlled by the voltage applied to the EN terminal. When VEN reaches 2.0V (Min),  
the internal circuit is activated and the IC starts up. To enable shutdown control with the EN terminal, the  
shutdown interval (low level interval of EN) must be set to 100µs or longer. Startup by EN must be at the same  
time or after the input of power supply voltage.  
VEN  
VENH  
VENL  
0
t
VOUT  
0
t
Start-up  
Shutdown  
Figure 36. Start-up and Shutdown with Enable  
(c) Soft Start  
When EN terminal is switched High, Soft Start operates and the output voltage gradually rises. With the Soft  
Start Function, overshoot of output voltage and rush current can be prevented. The rising time of output  
voltage is 1ms (Typ).  
EN  
VOUT  
0.8V x 90%  
0.8V  
FB  
1ms(Typ)  
Figure 37. Soft Start Timing Chart  
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(2) Protection  
The protective circuits are intended for prevention of damage caused by unexpected accidents.  
Do not use them for continuous protective operation.  
(a) Short Circuit Protection (SCP)  
The short circuit protection block compares the FB terminal voltage with the internal reference voltage VREF  
.
When the FB terminal voltage has fallen below 0.4V (Typ) for 1ms (Typ), SCP stops the operation for 16ms  
(Typ) and subsequently initiates a restart. However, during start-up, short circuit protection does not operate  
even if the IC is still in the SCP condition.  
EN Terminal  
Start-up Condition  
During start-up  
FB Terminal  
Short Circuit Protection  
0.4V (Typ)  
> 0.4V (Typ)  
0.4V (Typ)  
> 0.4V (Typ)  
-
OFF  
OFF  
ON  
2.0V or higher  
0.8V or lower  
Completed start-up  
-
OFF  
OFF  
Soft start  
1ms (Typ)  
VOUT  
SCP delay time  
1ms (Typ)  
SCP delay time  
1ms (Typ)  
0.8V  
FB  
SCP threshold voltage:  
0.4V (Typ)  
SCP release  
High side  
FET gate  
Low  
Low  
Low side  
FET gate  
OCP  
threshold  
6.0A (Typ)  
Inductor Current  
(Output Current)  
Build-in  
IC HICCUP  
Delay Signal  
16ms (Typ)  
SCP reset  
Figure 38. Short Circuit Protection (SCP) Timing Chart  
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(b) Under Voltage Lockout Protection (UVLO)  
The Under Voltage Lockout Protection circuit monitors the VIN terminal voltage. The operation enters standby  
when the VIN terminal voltage is 2.45V (Typ) or lower. The operation starts when the VIN terminal voltage is  
2.55V (Typ) or higher.  
UVLO Release  
VIN  
Hysteresis  
UVLO Detection  
0V  
VOUT  
Soft Start  
FB  
High side  
FET gate  
Low side  
FET gate  
Normal operation  
UVLO  
Normal operation  
Figure 39. UVLO Timing Chart  
(c) Thermal Shutdown (TSD)  
When the chip temperature exceeds Tj = 175C (Typ), the DC/DC converter output is stopped. Thermal  
protection circuit is reset when the temperature falls down. The thermal shutdown circuit is intended for  
shutting down the IC from thermal runaway in an abnormal state with the temperature exceeding Tjmax =  
150C. It is not meant to protect or guarantee the reliability of the application. Do not use this function of the  
circuit for application protection design.  
(d) Over Current Protection (OCP)  
The Over Current Protection function operates by using the current mode control to limit the current that flows  
through the high-side MOSFET at each cycle of the switching frequency. The designed over current limit value  
is 6.0A (Typ).  
(e) Over Voltage Protection (OVP)  
The over voltage protection function (OVP) compares the FB terminal voltage with the internal reference  
voltage VREF. When the FB terminal voltage exceeds 0.88V (Typ), it turns the output MOSFETs off. The output  
voltage returns to normal operation level with hysteresis after the output voltage drops.  
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2. Application Example (VOUT=3.3V)  
Parameter  
Input Voltage  
Symbol  
VIN  
Value  
5V  
Output Voltage  
VOUT  
fOSC  
3.3V  
Switching Frequency  
Maximum Output Current  
Operating Temperature Range  
1MHz (Typ)  
3A  
IOUTMAX  
Topr  
-40°C to +85°C  
BD9A302QWZ  
VIN  
EN  
1
2
3
4
8
7
6
5
VIN  
GND  
C3  
C2  
C1  
EN  
FB  
C8  
BST  
SW  
ITH  
VOUT  
L1  
R0  
R3  
C9  
MODE  
MODE  
C6  
C5  
C10  
R2  
VIN  
R1  
Figure 40. Application Circuit  
Table 1. Recommended Component Values  
Part No.  
L1  
Value  
1.5μH  
0.1μF  
10μF  
-
Company  
Murata  
Murata  
Murata  
-
Part Name  
FDSD0420-H-1R5M  
GRM155B11A104MA01  
GRM21BB31A106ME18  
-
(Note 1)  
C1  
(Note 2)  
C2  
C3  
(Note 3)  
C5  
22μF  
22μF  
0.1μF  
2700pF  
-
Murata  
Murata  
Murata  
Murata  
-
GRM21BB30J226ME38  
GRM21BB30J226ME38  
GRM155B11A104MA01  
GRM155B11H272KA01  
-
(Note 3)  
C6  
(Note 4)  
C8  
C9  
C10  
R0  
R1  
R2  
R3  
0Ω  
ROHM  
ROHM  
ROHM  
ROHM  
MCR01MZPJ000  
MCR01MZPD2402  
MCR01MZPD7502  
MCR01MZPD1802  
24kΩ  
75kΩ  
18kΩ  
(Note 1) In order to reduce the influence of high frequency noise, mount the 0.1μF ceramic capacitor as close as possible to the VIN pin and GND pin.  
(Note 2) For the capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set to a minimum  
value of no less than 4.7μF.  
(Note 3) In case capacitance value fluctuates due to temperature characteristics, DC bias characteristics, etc. of output capacitor, loop response  
characteristics may change. Please confirm on actual equipment. When selecting a capacitor, confirm the characteristics of the capacitor in its  
datasheet. Ceramic type of capacitors is recommended for the output capacitors.  
(Note 4) For capacitance of bootstrap capacitor take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum value  
to no less than 0.047μF.  
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100  
80  
60  
180  
135  
90  
MODE = H  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
PHASE  
40  
20  
45  
0
0
MODE = L  
-20  
-40  
-60  
-80  
-45  
-90  
-135  
-180  
GAIN  
VIN = 5.0V  
VOUT = 3.3V  
Phase Margin  
69.8deg  
0.001  
0.01  
0.1  
1
10  
1
10  
100  
1000  
Output Current : IOUT [A]  
Frequency[kHz]  
Figure 42. Closed Loop Response IOUT = 1A  
Figure 41. Efficiency vs Output Current  
(VIN = 5V, VOUT = 3.3V, L = 1.5μH, COUT = 22μF x 2)  
(VIN = 5V, VOUT = 3.3V, L = 1.5μH)  
VOUT = 100mV/div  
VOUT = 50mV/div  
VSW = 2V/div  
IOUT = 1A/div  
Time = 2μs/div  
Time = 1ms/div  
Figure 43. Load Transient Response  
Figure 44. VOUT Ripple IOUT = 3A  
IOUT = 0.75A 2.25A  
(VIN = 5V, VOUT = 3.3V, L = 1.5μH, COUT=22μF x 2)  
(VIN = 5V, VOUT = 3.3V, L = 1.5μH, COUT = 22μF x 2)  
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3. Application Example (VOUT=1.8V)  
Parameter  
Input Voltage  
Symbol  
VIN  
Value  
5V  
Output Voltage  
VOUT  
fOSC  
1.8V  
Switching Frequency  
Maximum Output Current  
Operating Temperature Range  
1MHz (Typ)  
3A  
IOUTMAX  
Topr  
-40°C to +85°C  
BD9A302QWZ  
VIN  
EN  
1
2
3
4
8
7
6
5
VIN  
GND  
C3  
C2  
C1  
EN  
FB  
C8  
BST  
SW  
ITH  
VOUT  
L1  
R0  
R3  
C9  
MODE  
MODE  
C6  
C5  
C10  
R2  
VIN  
R1  
Figure 45. Application Circuit  
Table 2. Recommended Component Values  
Part No.  
L1  
Value  
1.5μH  
0.1μF  
10μF  
-
Company  
Murata  
Murata  
Murata  
-
Part Name  
FDSD0420-H-1R5M  
GRM155B11A104MA01  
GRM21BB31A106ME18  
-
(Note 1)  
C1  
(Note 2)  
C2  
C3  
(Note 3)  
C5  
22μF  
22μF  
0.1μF  
2700pF  
-
Murata  
Murata  
Murata  
Murata  
-
GRM21BB30J226ME38  
GRM21BB30J226ME38  
GRM155B11A104MA01  
GRM155B11H272KA01  
-
(Note 3)  
C6  
(Note 4)  
C8  
C9  
C10  
R0  
R1  
R2  
R3  
0Ω  
ROHM  
ROHM  
ROHM  
ROHM  
MCR01MZPJ000  
MCR01MZPD2402  
MCR01MZPD3002  
MCR01MZPD9101  
24kΩ  
30kΩ  
9.1kΩ  
(Note 1) In order to reduce the influence of high frequency noise, mount the 0.1μF ceramic capacitor as close as possible to the VIN pin and GND pin.  
(Note 2) For the capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set to a minimum  
value of no less than 4.7μF.  
(Note 3) In case capacitance value fluctuates due to temperature characteristics, DC bias characteristics, etc. of output capacitor, loop response  
characteristics may change. Please confirm on actual equipment. When selecting a capacitor, confirm the characteristics of the capacitor in its  
datasheet. Ceramic type of capacitors is recommended for the output capacitors.  
(Note 4) For capacitance of bootstrap capacitor take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum value  
to no less than 0.047μF.  
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100  
80  
60  
180  
135  
90  
MODE = H  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
PHASE  
40  
20  
45  
0
0
MODE = L  
-20  
-40  
-60  
-80  
-45  
-90  
-135  
-180  
GAIN  
VIN = 5.0V  
VOUT = 1.8V  
Phase Margin  
70.6deg  
0.001  
0.01  
0.1  
1
10  
1
10  
100  
1000  
Output Current : IOUT [A]  
Frequency[kHz]  
Figure 47. Closed Loop Response IOUT = 1A  
Figure 46. Efficiency vs Output Current  
(VIN = 5V, VOUT = 1.8V, L = 1.5μH, COUT = 22μF x 2)  
(VIN = 5V, VOUT = 1.8V, L = 1.5μH)  
VOUT = 100mV/div  
VOUT = 50mV/div  
VSW = 2V/div  
IOUT = 1A/div  
Time = 2μs/div  
Time = 1ms/div  
Figure 48. Load Transient Response  
Figure 49. VOUT Ripple IOUT = 3A  
IOUT = 0.75A 2.25A  
(VIN = 5V, VOUT = 1.8V, L = 1.5μH, COUT = 22μF x 2)  
(VIN = 5V, VOUT = 1.8V, L = 1.5μH, COUT = 22μF x 2)  
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4. Application Example (VOUT=1.5V)  
Parameter  
Input Voltage  
Symbol  
VIN  
Value  
5V  
Output Voltage  
VOUT  
fOSC  
1.5V  
Switching Frequency  
Maximum Output Current  
Operating Temperature Range  
1MHz (Typ)  
3A  
IOUTMAX  
Topr  
-40°C to +85°C  
BD9A302QWZ  
VIN  
EN  
1
2
3
4
8
7
6
5
VIN  
GND  
C3  
C2  
C1  
EN  
FB  
C8  
BST  
SW  
ITH  
VOUT  
L1  
R0  
R3  
C9  
MODE  
MODE  
C6  
C5  
C10  
R2  
VIN  
R1  
Figure 50. Application Circuit  
Table 3. Recommended Component Values  
Part No.  
L1  
Value  
1.5μH  
0.1μF  
10μF  
-
Company  
Murata  
Murata  
Murata  
-
Part Name  
FDSD0420-H-1R5M  
GRM155B11A104MA01  
GRM21BB31A106ME18  
-
(Note 1)  
C1  
(Note 2)  
C2  
C3  
(Note 3)  
C5  
22μF  
22μF  
0.1μF  
2700pF  
-
Murata  
Murata  
Murata  
Murata  
-
GRM21BB30J226ME38  
GRM21BB30J226ME38  
GRM155B11A104MA01  
GRM155B11H272KA01  
-
(Note 3)  
C6  
(Note 4)  
C8  
C9  
C10  
R0  
R1  
R2  
R3  
0Ω  
ROHM  
ROHM  
ROHM  
ROHM  
MCR01MZPJ000  
MCR01MZPD1802  
MCR01MZPD1602  
MCR01MZPD9101  
18kΩ  
16kΩ  
9.1kΩ  
(Note 1) In order to reduce the influence of high frequency noise, mount the 0.1μF ceramic capacitor as close as possible to the VIN pin and GND pin.  
(Note 2) For the capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set to a minimum  
value of no less than 4.7μF.  
(Note 3) In case capacitance value fluctuates due to temperature characteristics, DC bias characteristics, etc. of output capacitor, loop response  
characteristics may change. Please confirm on actual equipment. When selecting a capacitor, confirm the characteristics of the capacitor in its  
datasheet. Ceramic type of capacitors is recommended for the output capacitors.  
(Note 4) For capacitance of bootstrap capacitor take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum value  
to no less than 0.047μF.  
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100  
80  
60  
180  
135  
90  
MODE = H  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
PHASE  
40  
20  
45  
0
0
MODE = L  
-20  
-40  
-60  
-80  
-45  
-90  
-135  
-180  
GAIN  
VIN = 5.0V  
VOUT = 1.5V  
Phase Margin  
68.1deg  
1
10  
100  
1000  
0.001  
0.01  
0.1  
1
10  
Output Current : IOUT [A]  
Frequency[kHz]  
Figure 52. Closed Loop Response IOUT = 1A  
Figure 51. Efficiency vs Output Current  
(VIN = 5V, VOUT = 1.5V, L = 1.5μH, COUT = 22μF x 2)  
(VIN = 5V, VOUT = 1.5V, L = 1.5μH)  
VOUT = 100mV/div  
VOUT = 50mV/div  
VSW = 2V/div  
IOUT = 1A/div  
Time = 1ms/div  
Time = 2μs/div  
Figure 53. Load Transient Response  
Figure 54. VOUT Ripple IOUT = 3A  
IOUT=0.75A 2.25A  
(VIN = 5V, VOUT = 1.5V, L = 1.5μH, COUT = 22μF x 2)  
(VIN = 5V, VOUT = 1.5V, L = 1.5μH, COUT = 22μF x 2)  
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5. Application Example (VOUT=1.2V)  
Parameter  
Input Voltage  
Symbol  
VIN  
Value  
5V  
Output Voltage  
VOUT  
fOSC  
1.2V  
Switching Frequency  
Maximum Output Current  
Operating Temperature Range  
1MHz (Typ)  
3A  
IOUTMAX  
Topr  
-40°C to +85°C  
BD9A302QWZ  
VIN  
EN  
1
2
3
4
8
7
6
5
VIN  
GND  
C3  
C2  
C1  
EN  
FB  
C8  
BST  
SW  
ITH  
VOUT  
L1  
R0  
R3  
C9  
MODE  
MODE  
C6  
C5  
C10  
R2  
VIN  
R1  
Figure 55. Application Circuit  
Table 4. Recommended Component Values  
Part No.  
L1  
Value  
1.5μH  
0.1μF  
10μF  
-
Company  
Murata  
Murata  
Murata  
-
Part Name  
FDSD0420-H-1R5M  
GRM155B11A104MA01  
GRM21BB31A106ME18  
-
(Note 1)  
C1  
(Note 2)  
C2  
C3  
(Note 3)  
C5  
22μF  
22μF  
0.1μF  
2700pF  
-
Murata  
Murata  
Murata  
Murata  
-
GRM21BB30J226ME38  
GRM21BB30J226ME38  
GRM155B11A104MA01  
GRM155B11H272KA01  
-
(Note 3)  
C6  
(Note 4)  
C8  
C9  
C10  
R0  
R1  
R2  
R3  
0Ω  
ROHM  
ROHM  
ROHM  
ROHM  
MCR01MZPJ000  
MCR01MZPD2002  
MCR01MZPD1002  
MCR01MZPD8201  
20kΩ  
10kΩ  
8.2kΩ  
(Note 1) In order to reduce the influence of high frequency noise, mount the 0.1μF ceramic capacitor as close as possible to the VIN pin and GND pin.  
(Note 2) For the capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set to a minimum  
value of no less than 4.7μF.  
(Note 3) In case capacitance value fluctuates due to temperature characteristics, DC bias characteristics, etc. of output capacitor, loop response  
characteristics may change. Please confirm on actual equipment. When selecting a capacitor, confirm the characteristics of the capacitor in its  
datasheet. Ceramic type of capacitors is recommended for the output capacitors.  
(Note 4) For capacitance of bootstrap capacitor take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum value  
to no less than 0.047μF.  
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100  
80  
60  
180  
135  
90  
MODE = H  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
PHASE  
40  
20  
45  
0
0
MODE = L  
-20  
-40  
-60  
-80  
-45  
-90  
-135  
-180  
GAIN  
Phase Margin  
64.7deg  
VIN = 5.0V  
VOUT = 1.2V  
1
10  
100  
1000  
0.001  
0.01  
0.1  
1
10  
Frequency[kHz]  
Output Current : IOUT [A]  
Figure 57. Closed Loop Response IOUT = 1A  
Figure 56. Efficiency vs Output Current  
(VIN = 5V, VOUT = 1.2V, L = 1.5μH, COUT = 22μF x 2)  
(VIN = 5V, VOUT = 1.2V, L = 1.5μH)  
VOUT = 100mV/div  
VOUT = 50mV/div  
VSW = 2V/div  
IOUT = 1A/div  
Time = 1ms/div  
Time = 2μs/div  
Figure 58. Load Transient Response  
Figure 59. VOUT Ripple IOUT = 3A  
IOUT = 0.75A 2.25A  
(VIN = 5V, VOUT = 1.2V, L = 1.5μH, COUT = 22μF x 2)  
(VIN = 5V, VOUT = 1.2V, L = 1.5μH, COUT = 22μF x 2)  
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6. Selection of Components Externally Connected  
About the application except the recommendation, please contact us.  
(1) Output LC Filter Constant  
The DC/DC converter requires an LC filter for smoothing the output voltage in order to supply a continuous current  
to the load. IL ripple current flowing through the inductor is returned to the BD9A302QWZ for SLLMTM control. It is  
recommended to use 1.5µH inductor since the feedback current has the best behavior in the specified inductance  
value.  
VIN  
IL  
Inductor Saturation Current > IOUTMAX + ΔIL / 2  
ΔIL  
L
VOUT  
Driver  
IOUT  
COUT  
Average Inductor Current  
t
Figure 60. Waveform of Inductor Current  
Figure 61. Output LC Filter Circuit  
Calculation with VIN = 5V, VOUT = 1.8V, L=1.5µH, and switching frequency fOSC = 1MHz is expressed as below.  
Inductor ripple current IL  
1
ΔIL =VOUT ×(VIN -VOUT )×  
=768  
mA  
VIN × fOSC × L  
The saturation current of the inductor must be larger than the sum of the maximum output current and one-half  
(1/2) of the inductor ripple current ∆IL.  
The output capacitor COUT affects the output ripple voltage characteristics. The output capacitor COUT must satisfy  
the required ripple voltage characteristics.  
The output ripple voltage can be represented by the following equation.  
1
ΔVRPL = ΔIL ×(RESR  
+
)
V
8 ×COUT × fOSC  
RESR is the Equivalent Series Resistance (ESR) of the output capacitor.  
Be careful of the total capacitance value, when additional capacitor CLOAD is connected to the output capacitor  
COUT. Use maximum additional capacitor CLOAD (Max) condition which satisfies the following method.  
Maximumstarting inductor ripple current ILSTART < Over Current limit 3.8A (Min)  
Maximum starting inductor ripple current ILSTART can be expressed in the following method.  
ΔIL  
ILSTART = Maximum starting output current(IOUTMAX ) + Charge current to output capacitor(ICAP ) +  
2
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Charge current of the output capacitor ICAP can be expressed in the following method.  
(COUT +CLOAD )×VOUT  
tSS  
ICAP  
=
A
Calculation with VIN= 5V, VOUT= 3.3V, L= 1.5µH, switching frequency fOSC= 800kHz(Min), output capacitor COUT  
44µF, Soft Start time tSS= 0.5ms(Min), load current during soft start IOSS= 2A is expressed as below.  
=
(3.8 - IOSS - ΔIL /2)× tSS  
CLOAD(Max)<  
-COUT 157.9  
μF  
VOUT  
(Note) CLOAD has an effect on the stability of the DC/DC converter.  
To ensure the stability of the DC/DC converter, make sure that a sufficient phase margin is provided.  
(2) Output Voltage Setting  
The output voltage value is set by the feedback resistance ratio.  
VOUT  
R2  
R1  
Error Amplifier  
FB  
R
1
+R  
2 ×0.8  
VOUT  
=
V
0.8V  
R
1
Figure 62. Feedback Resistors  
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(3) Phase Compensation Component  
A current mode control buck DC/DC converter is a one-pole, one-zero system. One-pole is formed by an error  
amplifier and load and the one-zero point is added by phase compensation. The phase compensation resistor RITH  
determines the crossover frequency fCRS where the total loop gain of the DC/DC converter is 0dB. A high value  
crossover frequency fCRS provides a good load transient response characteristic but inferior stability. Conversely, a  
low value crossover frequency fCRS greatly stabilizes the characteristics but the load transient response  
characteristic is impaired.  
(a) Selection of Phase Compensation Resistor RITH  
The Phase Compensation Resistance RITH can be determined by using the following equation.  
2π ×VOUT × fCRS ×COUT  
RITH  
=
Ω
VFB ×GMP×GMA  
Where:  
VOUT is the output voltage [V]  
fCRS is the crossover frequency [Hz]  
COUT is the output capacitance [F]  
VFB is the feedback reference voltage (0.8V (Typ))  
GMP is the current sense gain (13A/V (Typ))  
GMA is the error amplifier transconductance (260µA/V (Typ))  
(b) Selection of Phase Compensation Capacitance CITH  
For stable operation of the DC/DC converter, zero for compensation cancels the phase delay due to the pole  
formed by the load.  
The phase compensation capacitance CITH can be determined by using the following equation.  
COUT ×VOUT  
RITH × IOUT  
CITH  
=
F
(c) Loop Stability  
To ensure the stability of the DC/DC converter, make sure that a sufficient phase margin is provided. A phase  
margin of at least 45º in the worst conditions is recommended.  
(a)  
VOUT  
R2  
A
Gain [dB]  
GBW(b)  
FB  
ITH  
0
f
f
fCRS  
R1  
Phase[deg]  
0
RITH  
CITH  
90°  
0.8V  
90  
PHASE MARGIN  
180°  
180  
Figure 63. Phase Compensation Circuit  
Figure 64. Bode Plot  
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7. PCB Layout Design  
Figure 65 shows a buck DC/DC converter with a large pulsing current flowing into two loops. The first loop is the  
current flows to the converter when the high-side FET is turned on. The flow starts from the input capacitor CIN, runs  
through the FET, inductor L and the output capacitor COUT, back to GND of CIN via GND of COUT. The second loop is the  
current flows when the low-side FET is turned on. The flow starts from the low-side FET, runs through the inductor L  
and output capacitor COUT, back to GND of the low-side FET via GND of COUT. Route these two loops as thick and as  
short as possible to reduce noise for improved efficiency. It is recommended to connect the input and output capacitors  
directly to the GND plane. The PCB layout has a great influence on the DC/DC converter in terms of the overall heat  
generation, noise and efficiency characteristics.  
VIN  
VOUT  
L
MOS FETs  
CIN  
COUT  
GND  
Figure 65. Current Loop of Buck DC/DC Converter  
Accordingly, design the PCB layout considering the following points:  
(1) Connect an input capacitor as close as possible to the IC VIN terminal and GND terminal on the same plane as  
the IC.  
(2) If there is any unused area on the PCB, provide a copper foil plane for the GND node to assist heat dissipation  
from the IC and the surrounding components.  
(3) Switching nodes such as SW are susceptible to noise due to AC coupling with the other nodes. Route the inductor  
pattern as thick and as short as possible.  
(4) Provide lines connected to FB and ITH terminal with considerable distance from the SW nodes.  
(5) Place the output capacitor away from the input capacitor to avoid the propagation of harmonic noise from the  
input.  
Feedback  
Resistors  
GND  
Input Bypass  
Capacitor  
(0.1μF)  
Output Capacitor  
Output Inductor  
Input Bulk  
Capacitor  
(10μF)  
VIN  
VOUT  
Backside Heat Dissipation  
Exposed Pad  
Bootstrap  
Capacitor  
Enable Control  
Signal VIA  
Thermal VIA  
Bottom Layer Line  
Figure 66. PCB Layout (MODE = H)  
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I/O Equivalence Circuits  
2. EN  
3. BST / 4. SW  
VIN  
BST  
SW  
VIN  
EN  
430kΩ  
10kΩ  
570kΩ  
VIN  
GND  
GND  
GND  
GND  
5. MODE  
6. ITH  
VIN  
MODE  
40Ω  
10Ω  
10kΩ  
ITH  
500kΩ  
GND  
GND  
GND  
GND  
7. FB  
20kΩ  
FB  
20kΩ  
GND  
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Operational Notes  
1. Reverse Connection of Power Supply  
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when  
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply  
pins.  
2. Power Supply Lines  
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the  
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog  
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and  
aging on the capacitance value when using electrolytic capacitors.  
3. Ground Voltage  
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. However,  
pins that drive inductive loads (e.g. motor driver outputs, DC-DC converter outputs) may inevitably go below ground  
due to back EMF or electromotive force. In such cases, the user should make sure that such voltages going below  
ground will not cause the IC and the system to malfunction by examining carefully all relevant factors and conditions  
such as motor characteristics, supply voltage, operating frequency and PCB wiring to name a few.  
4. Ground Wiring Pattern  
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but  
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal  
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations  
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.  
5. Thermal Consideration  
Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may  
result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, increase the  
board size and copper area to prevent exceeding the maximum junction temperature rating.  
6. Recommended Operating Conditions  
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.  
The electrical characteristics are guaranteed under the conditions of each parameter.  
7. Inrush Current  
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow  
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.  
Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing  
of connections.  
8. Operation Under Strong Electromagnetic Field  
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.  
9. Testing on Application Boards  
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject  
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should  
always be turned off completely before connecting or removing it from the test setup during the inspection process. To  
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and  
storage.  
10. Inter-pin Short and Mounting Errors  
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in  
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.  
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and  
unintentional solder bridge deposited in between pins during assembly to name a few.  
11. Unused Input Terminals  
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and  
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge  
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause  
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power  
supply or ground line.  
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Operational Notes continued  
12. Regarding Input Pins of the IC  
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them  
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a  
parasitic diode or transistor. For example (refer to figure below):  
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.  
When GND > Pin B, the P-N junction operates as a parasitic transistor.  
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual  
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to  
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be  
avoided.  
Resistor  
Transistor (NPN)  
Pin A  
Pin B  
Pin B  
B
E
C
Pin A  
B
C
E
P
P+  
P+  
N
P+  
P
P+  
N
N
N
N
N
N
N
Parasitic  
Elements  
Parasitic  
Elements  
P Substrate  
GND GND  
P Substrate  
GND  
GND  
Parasitic  
Elements  
Parasitic  
Elements  
N Region  
close-by  
Figure 67. Example of Monolithic IC Structure  
13. Ceramic Capacitor  
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with  
temperature and the decrease in nominal capacitance due to DC bias and others.  
14. Area of Safe Operation (ASO)  
Operate the IC such that the output voltage, output current, and the maximum junction temperature rating are all within  
the Area of Safe Operation (ASO).  
15. Thermal Shutdown Circuit (TSD)  
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be  
within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the  
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls  
below the TSD threshold, the circuits are automatically restored to normal operation.  
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no  
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat  
damage.  
16. Over Current Protection Circuit (OCP)  
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This  
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should  
not be used in applications characterized by continuous operation or transitioning of the protection circuit.  
17. Disturbance Light  
In a device where a portion of silicon is exposed to light such as in a WL-CSP, IC characteristics may be affected due  
to photoelectric effect. For this reason, it is recommended to come up with countermeasures that will prevent the chip  
from being exposed to light.  
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Ordering Information  
B D 9 A 3 0 2 Q W Z -  
E 2  
Part Number  
Package  
UMMP008AZ020  
Packaging and forming specification  
E2: Embossed tape and reel  
Marking Diagram  
UMMP008AZ020 (TOP VIEW)  
Part Number Marking  
LOT Number  
D 9 A  
3 0 2  
1PIN MARK  
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Physical Dimension, Tape and Reel Information  
Package Name  
UMMP008AZ020  
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Revision History  
Date  
Revision  
001  
Changes  
14.Mar.2017  
New Release  
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Notice  
Precaution on using ROHM Products  
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,  
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you  
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport  
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car  
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or  
serious damage to property (Specific Applications), please consult with the ROHM sales representative in advance.  
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any  
damages, expenses or losses incurred by you or third parties arising from the use of any ROHMs Products for Specific  
Applications.  
(Note1) Medical Equipment Classification of the Specific Applications  
JAPAN  
USA  
EU  
CHINA  
CLASS  
CLASSⅣ  
CLASSb  
CLASSⅢ  
CLASSⅢ  
CLASSⅢ  
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor  
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate  
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which  
a failure or malfunction of our Products may cause. The following are examples of safety measures:  
[a] Installation of protection circuits or other protective devices to improve system safety  
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure  
3. Our Products are designed and manufactured for use under standard conditions and not under any special or  
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way  
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any  
special or extraordinary environments or conditions. If you intend to use our Products under any special or  
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of  
product performance, reliability, etc, prior to use, must be necessary:  
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents  
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust  
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,  
H2S, NH3, SO2, and NO2  
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves  
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items  
[f] Sealing or coating our Products with resin or other coating materials  
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of  
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning  
residue after soldering  
[h] Use of the Products in places subject to dew condensation  
4. The Products are not subject to radiation-proof design.  
5. Please verify and confirm characteristics of the final or mounted products in using the Products.  
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,  
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power  
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect  
product performance and reliability.  
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in  
the range that does not exceed the maximum junction temperature.  
8. Confirm that operation temperature is within the specified range described in the product specification.  
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in  
this document.  
Precaution for Mounting / Circuit board design  
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product  
performance and reliability.  
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must  
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,  
please consult with the ROHM representative in advance.  
For details, please refer to ROHM Mounting specification  
Notice-PGA-E  
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© 2015 ROHM Co., Ltd. All rights reserved.  
Precautions Regarding Application Examples and External Circuits  
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the  
characteristics of the Products and external components, including transient characteristics, as well as static  
characteristics.  
2. You agree that application notes, reference designs, and associated data and information contained in this document  
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely  
responsible for it and you must exercise your own independent verification and judgment in the use of such information  
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses  
incurred by you or third parties arising from the use of such information.  
Precaution for Electrostatic  
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper  
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be  
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,  
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).  
Precaution for Storage / Transportation  
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:  
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2  
[b] the temperature or humidity exceeds those recommended by ROHM  
[c] the Products are exposed to direct sunshine or condensation  
[d] the Products are exposed to high Electrostatic  
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period  
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is  
exceeding the recommended storage time period.  
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads  
may occur due to excessive stress applied when dropping of a carton.  
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of  
which storage time is exceeding the recommended storage time period.  
Precaution for Product Label  
A two-dimensional barcode printed on ROHM Products label is for ROHMs internal use only.  
Precaution for Disposition  
When disposing Products please dispose them properly using an authorized industry waste company.  
Precaution for Foreign Exchange and Foreign Trade act  
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign  
trade act, please consult with ROHM in case of export.  
Precaution Regarding Intellectual Property Rights  
1. All information and data including but not limited to application example contained in this document is for reference  
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any  
other rights of any third party regarding such information or data.  
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the  
Products with other articles such as components, circuits, systems or external equipment (including software).  
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any  
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM  
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to  
manufacture or sell products containing the Products, subject to the terms and conditions herein.  
Other Precaution  
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.  
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written  
consent of ROHM.  
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the  
Products or this document for any military purposes, including but not limited to, the development of mass-destruction  
weapons.  
4. The proper names of companies or products described in this document are trademarks or registered trademarks of  
ROHM, its affiliated companies or third parties.  
Notice-PGA-E  
Rev.003  
© 2015 ROHM Co., Ltd. All rights reserved.  
Daattaasshheeeett  
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相关型号:

BD9A400MUV

BD9A400MUV是内置低导通电阻的功率MOSFET的同步整流降压型开关稳压器。最大可输出4A的电流。凭借SLLM™控制,实现轻负载状态的良好效率特性,适用于要降低待机功耗的设备。振荡频率1MHz的高速产品,适用于小型电感。是电流模式控制DC/DC转换器,具有高速瞬态响应性能,可轻松设定相位补偿。
ROHM

BD9A600MUV

BD9A600MUV是内置低导通电阻的功率MOSFET的同步整流降压型开关稳压器。最大可输出6A的电流。凭借SLLM™控制,实现轻负载状态的良好效率特性,适用于要降低待机功耗的设备。振荡频率1MHz的高速产品,适用于小型电感。是电流模式控制DC/DC转换器,具有高速瞬态响应性能,可轻松设定相位补偿。
ROHM

BD9B100MUV

BD9B100MUV是内置低导通电阻的功率MOSFET的同步整流降压型开关稳压器。最大可输出1A的电流。采用轻负载时进行低消耗动作的独创恒定时间控制方式,适用于要降低待机功耗的设备。振荡频率高,适用于小型电感。是恒定时间控制DC/DC转换器,具有高速瞬态响应性能。
ROHM

BD9B200MUV

BD9B200MUV是内置低导通电阻的功率MOSFET的同步整流降压型开关稳压器。最大可输出2A的电流。采用轻负载时进行低消耗动作的独创恒定时间控制方式,适用于要降低待机功耗的设备。振荡频率高,适用于小型电感。是恒定时间控制DC/DC转换器,具有高速瞬态响应性能。
ROHM

BD9B300MUV

BD9B300MUV是内置低导通电阻的功率MOSFET的同步整流降压型开关稳压器。最大可输出3A的电流。采用轻负载时进行低功耗工作的独创恒定时间控制方式,适用于要降低待机功耗的设备。振荡频率高,适用于小型电感。是恒定时间控制DC/DC转换器,具有高速瞬态响应性能。
ROHM

BD9B301MUV-LB

本产品是面向工业设备市场的产品,保证可长期稳定供货。是适合这些用途的产品。BD9B301MUV-LB是内置低导通电阻的功率MOSFET的同步整流降压型开关稳压器。最大可输出3A的电流。采用轻负载时进行低消耗动作的独创恒定时间控制方式,适用于要降低待机功耗的设备。振荡频率高,适用于小型电感。是恒定时间控制DC/DC转换器,具有高速瞬态响应性能。
ROHM

BD9B304QWZ

BD9B304QWZ是内置低导通电阻的功率MOSFET的同步整流降压型开关稳压器。最大可输出3A的电流。采用轻负载时进行低消耗动作的独创恒定时间控制方式,适用于要降低待机功耗的设备。振荡频率高,适用于小型电感。是恒定时间控制DC/DC转换器,具有高速负载响应性能。
ROHM

BD9B305QUZ

BD9B305QUZ是一款同步整流降压DC/DC转换器,内置低导通电阻功率MOSFET。可以输出高达3A的输出电流。采用固定导通时间控制方法,具有高速负载响应性能。采用轻负载模式控制方式,可提高轻负载时的效率,适用于需要降低待机时功耗的设备。具有电源良好输出功能,可实现系统的时序控制。采用小型封装,可实现高功率和减小安装面积。Power Supply Reference BoardFor Xilinx’s FPGA Spartan-7
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BD9B306NF-Z (开发中)

BD9B306NF-Z is one of the BD9Bx06NF-Z series of single synchronous buck DC/DC converter with built-in low on-resistance power MOSFETs. It can provide current up to 3A. The output voltage can achieve a high accuracy due to ±1% reference voltage. It features fast transient response due to constant on-time control system. The Light Load Mode control improves efficiency in light-load conditions. It is ideal for reducing standby power consumption of equipment. Power Good function makes it possible for system to control sequence. It achieves the high power density and offer a small footprint on the PCB by employing 6 pins 1.5mm x 1.5mm small package.
ROHM

BD9B333GWZ

BD9B333GWZ是内置低导通电阻的功率MOSFET的同步整流降压型DC/DC转换器。最大可输出3A的电流。采用轻负载时进行低功耗工作的独创恒定时间控制方式,适用于要降低待机功耗的设备。振荡频率高,适用于小型电感。是恒定时间控制DC/DC转换器,具有高速负载响应性能。BD9B333GWZ 采用小型CSP封装,可在大功率密度下减少贴装面积。
ROHM

BD9B400MUV

Integrated MOSFET Single Synchronous Buck DC/DC Converter
ROHM

BD9B400MUV-E2

Integrated MOSFET Single Synchronous Buck DC/DC Converter
ROHM