BD9S402MUF-C (新产品) [ROHM]
BD9S402MUF-C是一款内置低导通电阻功率MOSFET的同步整流降压型DC-DC转换器。可输出最大4A的电流。其开关频率高达2.2MHz，因此允许使用小型电感器。该产品采用电流模式控制，具有高速瞬态响应性能。另外，还内置有相位补偿电路，仅用很少的外置元器件即可构建应用产品。;
| 型号： | BD9S402MUF-C (新产品) |
| 厂家： | 
ROHM |
| 描述： | BD9S402MUF-C是一款内置低导通电阻功率MOSFET的同步整流降压型DC-DC转换器。可输出最大4A的电流。其开关频率高达2.2MHz，因此允许使用小型电感器。该产品采用电流模式控制，具有高速瞬态响应性能。另外，还内置有相位补偿电路，仅用很少的外置元器件即可构建应用产品。 开关 DC-DC转换器 电感器 |
| 文件： | 总41页 (文件大小：2226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Nano Pulse ControlTM
Datasheet
2.7 V to 5.5 V Input, 4 A
Single Synchronous Buck DC/DC Converter
for Automotive
BD9S402MUF-C
General Description
Key Specifications
◼ Input Voltage:
BD9S402MUF-C is a synchronous buck DC/DC converter
with built-in low ON resistor power MOSFETs. It can
provide current up to 4 A. Small inductor is applicable due
to high switching frequency of 2.2 MHz. It has fast transient
response performance due to current mode control. It has
a built-in phase compensation circuit. Applications can be
created with a few external components.
2.7 V to 5.5 V
0.6 V to VPVIN x 0.75 V
4 A (Max)
◼ Output Voltage Setting:
◼ Output Current:
◼ Switching Frequency:
◼ High Side FET ON Resistance:
◼ Low Side FET ON Resistance:
◼ Shutdown Circuit Current:
◼ Operating Temperature:
2.2 MHz (Typ)
60 mΩ (Typ)
35 mΩ (Typ)
0 μA (Typ)
-40 °C to +125 °C
Features
QuiCurTM
Package
W (Typ) x D (Typ) x H (Max)
3.0 mm x 3.0 mm x 1.0 mm
◼
◼
◼
◼
◼
◼
◼
◼
◼
◼
◼
◼
◼
◼
Nano Pulse ControlTM
VQFN16FV3030
AEC-Q100 Qualified(Note 1)
Functional Safety Supportive Automotive Products
Single Synchronous Buck DC/DC Converter
Adjustable Soft Start Function
Output Discharge Function
Power Good Output
Under Voltage Lockout Protection (UVLO)
Short Circuit Protection (SCP)
Output Over Voltage Protection (OVP)
Over Current Protection (OCP)
Thermal Shutdown Protection (TSD)
Wettable Flank QFN Package
Enlarged View
(Note 1) Grade 1
VQFN16FV3030
Wettable Flank Package
Applications
◼
◼
Automotive Equipment
Other Electronic Equipment
Typical Application Circuit
VIN
PVIN
PGD
SW
AVIN
GAIN
VGAIN
VEN
CIN1
CIN2
VOUT
EN
SS
L1
COUT
R1
R2
PGND
AGND
FB
C3
QuiCurTM, Nano Pulse ControlTM is a trademark or a registered trademark of ROHM Co., Ltd.
〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays
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BD9S402MUF-C
Contents
General Description........................................................................................................................................................................1
Features..........................................................................................................................................................................................1
Applications ....................................................................................................................................................................................1
Key Specifications ..........................................................................................................................................................................1
Package..........................................................................................................................................................................................1
Typical Application Circuit ...............................................................................................................................................................1
Pin Configuration ............................................................................................................................................................................3
Pin Descriptions..............................................................................................................................................................................3
Block Diagram ................................................................................................................................................................................4
Description of Blocks ......................................................................................................................................................................5
Absolute Maximum Ratings ............................................................................................................................................................6
Thermal Resistance........................................................................................................................................................................6
Recommended Operating Conditions.............................................................................................................................................6
Electrical Characteristics.................................................................................................................................................................7
Typical Performance Curves (Reference Data) ..............................................................................................................................9
Function Explanations ..................................................................................................................................................................15
1.
2.
3.
4.
5.
6.
Enable Control................................................................................................................................................................15
Nano Pulse ControlTM.....................................................................................................................................................15
Power Good Function.....................................................................................................................................................16
Output Discharge Function.............................................................................................................................................16
QuiCurTM.........................................................................................................................................................................16
Error Amplifier Gain Switching Function .........................................................................................................................16
Protection Function.......................................................................................................................................................................17
1.
2.
3.
4.
5.
Short Circuit Protection (SCP)........................................................................................................................................17
Over Current Protection (OCP).......................................................................................................................................17
Under Voltage Lock Out Protection (UVLO) ...................................................................................................................18
Thermal Shutdown (TSD)...............................................................................................................................................18
Over Voltage Protection (OVP).......................................................................................................................................18
Selection of Components Externally Connected...........................................................................................................................19
1.
2.
3.
4.
5.
6.
7.
Application Example.......................................................................................................................................................19
Switching Frequency ......................................................................................................................................................19
Output Voltage Setting....................................................................................................................................................19
Selection of Input Capacitor ...........................................................................................................................................20
Selection of Output LC Filter ..........................................................................................................................................20
Selection of Soft Start Capacitor ....................................................................................................................................21
Input Voltage Startup......................................................................................................................................................22
Application Characteristic Data (Reference Data) ........................................................................................................................23
PCB Layout Design ......................................................................................................................................................................30
Power Dissipation.........................................................................................................................................................................32
I/O Equivalence Circuits................................................................................................................................................................33
Operational Notes.........................................................................................................................................................................34
Ordering Information.....................................................................................................................................................................36
Marking Diagram ..........................................................................................................................................................................36
Physical Dimension and Packing Information...............................................................................................................................37
Revision History............................................................................................................................................................................38
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BD9S402MUF-C
Pin Configuration
(TOP VIEW)
16
15
14
13
PVIN
PVIN
1
2
3
4
12 SW
11 SW
10 SW
EXP-PAD
PGND
PGND
9
SS
5
6
7
8
Pin Descriptions
Pin No.
Pin Name
PVIN
Function
Power supply input pins that are used for the output stage of the switching regulator.
Connect a ceramic capacitor of 10 μF as a recommended value. For details, see
Selection of Components Externally Connected 4. Selection of Input Capacitor.
1, 2
3, 4
5
PGND
AGND
FB
Ground pins for the output stage of the switching regulator.
Ground pin.
VOUT feedback pin. Connect output voltage divider to this pin to set the output voltage.
For the output voltage setting method, see Selection of Components Externally
Connected 3. Output Voltage Setting.
6
This pin is not connected to the chip. Use this as open. If this pin is used other than
open and adjacent pins are expected to be shorted, confirm if there is any problem with
the actual application.
7
N.C.
This pin switches the gain of the internal error amplifier of the device. When this pin is
set to High, the device is in the fast load response mode, and when it is set to Low or
open, the device is in the low output capacitance mode. For details, see Function
Explanations 6. Error Amplifier Gain Switching Function.
8
GAIN
Pin for setting the Soft Start Time. The rise time of the output voltage can be set by
connecting a capacitor to this pin. See Selection of Components Externally Connected
6. Selection of Soft Start Capacitor for how to set the capacitance value.
9
SS
SW
Switch pin. These pins are connected to the drain of the High Side FET and the Low
Side FET.
10, 11, 12
This pin is not connected to the chip. Use this as open. If this pin is used other than
open and adjacent pins are expected to be shorted, confirm if there is any problem with
the actual application.
Power Good pin, an open drain output. It is needs to be pulled up to the power supply
with a resistor. See Function Explanations 3. Power Good Function for setting the
resistance.
13
14
15
16
-
N.C.
PGD
EN
Device enable pin. Turning this pin Low forces, the device to enter the shutdown mode.
Turning this pin High makes the device to start up.
Power supply input pin for internal circuit. This pin is shorted to the PVIN pin. Connect
a ceramic capacitor of 4700 pF as a recommended value.
AVIN
EXP-PAD
A backside heat dissipation pad. Connecting to the internal PCB ground plane by using
via provides excellent heat dissipation characteristics.
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BD9S402MUF-C
Block Diagram
VIN
VIN
AVIN
16
PVIN
1
2
Slope
HOCP
PVIN
HSL
SW
EN
15 VREF
PWM
Comparator
Error
Amplifier
SS
Soft
9
Q
R
S
Start
Driver
Logic
PGND
PVIN
SW
OSC
10
11
12
3
VOUT
FB
6
AVIN
UVLO
SCP
OVP
TSD
PGND
AGND
LOCP
4
SW
LSL
Power
Good
5
14
PGD
8
GAIN
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BD9S402MUF-C
Description of Blocks
1. VREF
The VREF block generates the internal reference voltage.
2. UVLO (Under Voltage Lock Out)
The UVLO block is for under voltage lockout protection. It shuts down the device when the VAVIN falls to 2.45 V (Typ) or
lower. The threshold voltage has a hysteresis of 100 mV (Typ).
3. SCP (Short Circuit Protection)
This is the short circuit protection circuit. After Soft Start is judged to be completed, if the FB pin voltage falls to 0.42 V
(Typ) or less and remain in that state for 1 ms (Typ), output MOSFETs turn OFF for 14 ms (Typ) and then restart the
operation.
4. OVP (Over Voltage Protection)
This is the output over voltage protection circuit. When the FB pin voltage becomes VFB +8 % (Typ) or more, it turns the
output MOSFETs OFF. After output voltage falls VFB +6 % (Typ) or less, the output MOSFETs return to normal operation.
5. TSD (Thermal Shutdown)
This is the thermal shutdown circuit. It shuts down the device when the junction temperature (Tj) reaches to 175 °C (Typ)
or more. When the Tj falls below the TSD threshold, the circuits are automatically restored to normal operation with
hysteresis of 25 °C (Typ).
6. HOCP (High Side Over Current Protection)
This block detects the current flowing through the High Side FET and limits the current flowing at each cycle of switching
frequency.
7. LOCP (Low Side Over Current Protection)
This block detects the current flowing through the Low Side FET and limits the current flowing at each cycle of switching
frequency.
8. Soft Start
The Soft Start circuit slows down the rise of output voltage during startup, which allows the prevention of output voltage
overshoot. The Soft Start Time can be specified by connecting a capacitor to the SS pin. See Selection of Components
Externally Connected 6. Selection of Soft Start Capacitor for how to calculate the capacitance. A built-in Soft Start function
is provided, and a Soft Start is initiated in tSS (Electrical Characteristics) when the SS pin is open.
9. Error Amplifier
This block is an error amplifier with a reference voltage of 0.6 V (Typ) and FB pin voltage as inputs, and the gain setting
can be switched between High and Low on the GAIN pin.
10.PWM Comparator
The PWM Comparator block compares the output voltage of the Error Amplifier and the Slope signal to determine the
output switching pulse duty.
11.OSC (Oscillator)
This block generates the oscillating frequency.
12.Driver Logic
This block controls switching operation and various protection functions.
13.Power Good
When the FB pin voltage reaches VFB (0.6 V, Typ) within +6 % to -2 %, the built-in Nch MOSFET turns OFF and the PGD
output turns High. There is a 2 % hysteresis on the threshold voltage, so the PGD output turns Low when the FB pin voltage
reaches outside +8 % to -4 % of VFB.
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BD9S402MUF-C
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Input Voltage
VPVIN, VAVIN
VEN
-0.3 to +7.0
-0.3 to VAVIN
-0.3 to VAVIN
-0.3 to +7.0
-0.3 to VAVIN
150
V
V
EN Voltage
GAIN Voltage
VGAIN
V
PGD Voltage
VPGD
V
FB, SS Voltage
VFB, VSS
Tjmax
Tstg
V
Maximum Junction Temperature
°C
Storage Temperature Range
-55 to +150
°C
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is
operated over the absolute maximum ratings.
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by
increasing board size and copper area so as not to exceed the maximum junction temperature rating.
Thermal Resistance (Note 1)
Thermal Resistance (Typ)
Parameter
Symbol
Unit
1s(Note 3)
2s2p(Note 4)
VQFN16FV3030
Junction to Ambient
Junction to Top Characterization Parameter(Note 2)
θJA
189.0
23.0
57.5
10.0
°C/W
°C/W
ΨJT
(Note 1) Based on JESD51-2A(Still-Air)
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface
of the component package.
(Note 3) Using a PCB board based on JESD51-3.
(Note 4) Using a PCB board based on JESD51-5, 7.
Layer Number of
Measurement Board
Material
FR-4
Board Size
Single
114.3 mm x 76.2 mm x 1.57 mmt
Top
Copper Pattern
Thickness
70 μm
Footprints and Traces
Layer Number of
Measurement Board
Thermal Via(Note 5)
Material
FR-4
Board Size
114.3 mm x 76.2 mm x 1.6 mmt
2 Internal Layers
Pitch
Diameter
4 Layers
1.20 mm
Φ0.30 mm
Top
Copper Pattern
Bottom
Thickness
70 μm
Copper Pattern
Thickness
35 μm
Copper Pattern
Thickness
70 μm
Footprints and Traces
74.2 mm x 74.2 mm
74.2 mm x 74.2 mm
(Note 5) This thermal via connect with the copper pattern of layers 1,2, and 4. The placement and dimensions obey a land pattern.
Recommended Operating Conditions
Parameter
Input Voltage
Symbol
Min
Max
Unit
VPVIN, VAVIN
Ta
2.7
5.5
V
°C
A
Operating Temperature
Output Current
-40
+125
IOUT
-
4
VPVIN x 0.75
50
Output Voltage Setting
VOUT
0.6(Note 1)
V
SW Minimum ON Time
tONMIN
-
ns
(Note 1) Although the output voltage is configurable at 0.6 V or more, it may be limited by the SW minimum ON pulse width. For the configurable range,
refer to the Output Voltage Setting in Selection of Components Externally Connected.
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BD9S402MUF-C
Electrical Characteristics
(Unless otherwise specified Ta = Tj = -40 °C to +125 °C, VAVIN = VPVIN = 5.0 V, VEN = 5.0 V, Typical value is Tj = +25 °C)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
AVIN
Shutdown Circuit Current
Circuit Current
ISDN
ICC
VUVLO1
VUVLO2
-
0
10
μA VEN = 0 V, Tj = 25 °C
VGAIN = 0 V, IOUT = 0 mA
mA
0.90
1.80
2.70
Non-switching, Tj = 25 °C
UVLO Detection Voltage
UVLO Release Voltage
UVLO Hysteresis Voltage
ENABLE
2.30
2.40
50
2.45
2.55
100
2.60
2.70
125
V
V
VAVIN Falling
VAVIN Rising
VUVLO-HYS
mV
EN Input Voltage High
EN Input Voltage Low
EN Input Current
GAIN
VENH
VENL
IEN
1.0
GND
2
-
-
VAVN
0.4
6
V
V
4
μA VEN = 5 V, Tj = 25 °C
VAVIN
1.0
-
GAIN Input Voltage High
VGAINH
-
VAVIN
V
GAIN Input Voltage Low
GAIN Input Current
Reference Voltage
FB Pin Voltage
VGAINL
IGAIN
GND
6
-
0.8
16
V
11
μA VGAIN = 5 V, Tj = 25 °C
VFB
IFB
0.594
-
0.600
0
0.606
0.1
V
FB Input Current
Soft Start
μA VFB = 0.6 V
EN Waiting Time
Soft Start Time
tWAIT
tSS
100
0.75
-1.4
230
1.00
-1.0
400
1.25
-0.6
μs
ms SS Pin OPEN
μA
SS Charge Current
Switching Frequency
Switching Frequency
Power Good
ISS
fSW
2.0
2.2
2.4
MHz
VFB
x 0.94
VFB
x 0.96
VFB
x 1.06
VFB
x 1.04
VFB
x 0.96
VFB
x 0.98
VFB
x 1.08
VFB
x 1.06
VFB
x 0.97
VFB
x 0.99
VFB
x 1.09
VFB
x 1.07
PGD Falling (Fault) Voltage
PGD Rising (Good) Voltage
PGD Rising (Fault) Voltage
PGD Falling (Good) Voltage
VPGDTH_FF
VPGDTH_RG
VPGDTH_RF
VPGDTH_FG
V
V
V
V
VFB Falling
VFB Rising
VFB Rising
VFB Falling
PGD Falling (Fault) Detection delay time
PGD Rising (Fault) Detection delay time
PGD Output Leakage Current
PGD FET ON Resistance
tPGDELFF
tPGDELRF
ILEAKPGD
RPGD
60
60
-
105
105
0
150
150
1
μs
μs
μA VPGD = 5 V, Tj = 25 °C
Ω
20
0.02
50
80
PGD Output Low Level Voltage
Switch MOSFET
VPGDL
0.05
0.12
V
IPGD = 1 mA
30
35
20
23
60
70
35
38
100
110
60
mΩ VPVIN = 5 V
mΩ VPVIN = 3.3 V
mΩ VPVIN = 5 V
mΩ VPVIN = 3.3 V
High Side FET ON Resistance
Low Side FET ON Resistance
RONH
RONL
ILEAKSWH
ILEAKSWL
63
VPVIN = 5.5 V, VSW = 0 V
High Side FET Leakage Current
Low Side FET Leakage Current
-
-
0
0
5
5
μA
μA
Tj = 25° C
VPVIN = 5.5 V, VSW = 5.5 V
Tj = 25 °C
High Side FET Current Limit (Note 1)
Low Side FET Current Limit (Note 1)
IOCPH
IOCPL
RDIS
4.6
4.0
30
6.4
5.4
60
8.2
7.0
A
A
Ω
SW Discharge Resistance
100
VEN = 0 V, Vsw = 3.3 V
(Note 1) This is design value. Not production tested.
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BD9S402MUF-C
Electrical Characteristics – continued
(Unless otherwise specified Ta = Tj = -40 °C to +125 °C, VAVIN = VPVIN = 5.0 V, VEN = 5.0 V, Typical value is Tj = +25 °C)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
SCP, OVP
Short Circuit Protection Detection
Voltage
Output Over Voltage Protection
Detection Voltage
VSCP
VOVP
0.34
0.42
0.50
V
V
VFB Falling
VFB Rising
VFB
x 1.06
VFB
x 1.08
VFB
x 1.09
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BD9S402MUF-C
Typical Performance Curves (Reference Data)
Unless otherwise specified VIN = VEN
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
10
AVIN Current
AVIN Current
9
8
7
6
5
4
VIN = 5.0 V
VIN = 5.0 V
3
2
1
0
VIN = 3.3 V
VIN = 3.3 V
-50 -25
0
25 50 75 100 125 150
Temperature [°C]
-50 -25
0
25 50 75 100 125 150
Temperature [°C]
Figure 1. Shutdown Circuit Current vs Temperature
Figure 2. Circuit Current vs Temperature
2.40
100.0
90.0
80.0
70.0
60.0
50.0
40.0
30.0
VIN = 5.0 V
VIN = 5.0 V
2.35
2.30
2.25
2.20
2.15
2.10
2.05
2.00
VIN = 3.3 V
-50 -25
0
25 50 75 100 125 150
Temperature [°C]
-50 -25
0
25 50 75 100 125 150
Temperature [°C]
Figure 3. Switching Frequency vs Temperature
Figure 4. SW Discharge Resistance vs Temperature
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BD9S402MUF-C
Typical Performance Curves (Reference Data) – continued
0.606
0.604
0.100
0.080
0.060
0.040
0.020
0.000
-0.020
VIN = 5.0 V
0.602
0.600
0.598
VIN = 3.3 V
0.596
0.594
-50 -25
0
25 50 75 100 125 150
Temperature [°C]
-50 -25
0
25 50 75 100 125 150
Temperature [°C]
Figure 5. FB Pin Voltage vs Temperature
Figure 6. FB Input Current vs Temperature
2.6
2.4
2.2
2.0
1.8
1.6
1.4
20
16
12
8
VIN = 5.0 V
VGAIN = 5.0 V
VGAINH_threshold
4
VGAIN = 3.3 V
VGAINL_threshold
0
-50 -25
0
25 50 75 100 125 150
Temperature [°C]
-50 -25
0
25 50 75 100 125 150
Temperature [°C]
Figure 7. GAIN Input Voltage vs Temperature
Figure 8. GAIN Input Current vs Temperature
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BD9S402MUF-C
Typical Performance Curves (Reference Data) – continued
-0.60
-0.70
-0.80
-0.90
-1.00
-1.10
-1.20
-1.30
-1.40
1.25
CSS = C3 = OPEN
VIN = 5.0 V
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
VIN = 3.3 V
VIN = 5.0 V
-50 -25
0
25 50 75 100 125 150
Temperature [°C]
-50 -25
0
25 50 75 100 125 150
Temperature [°C]
Figure 9. Soft Start Time vs Temperature
Figure 10. SS Charge Current vs Temperature
65
60
55
50
45
40
35
30
25
20
110
100
90
VIN = 3.3 V
VIN = 3.3 V
80
70
60
VIN = 5.0 V
VIN = 5.0 V
50
40
30
-50 -25
0
25 50 75 100 125 150
Temperature [°C]
-50 -25
0
25 50 75 100 125 150
Temperature [°C]
Figure 11. High Side FET ON Resistance vs Temperature
Figure 12. Low Side FET ON Resistance vs Temperature
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Typical Performance Curves (Reference Data) – continued
0.66
80
70
60
50
40
30
20
Rising Fault
VIN = 5.0 V
VIN = 5.0 V
0.64
0.62
0.60
0.58
0.56
Falling Good
Rising Good
Falling Fault
-50 -25
0
25 50 75 100 125 150
Temperature [°C]
-50 -25
0
25 50 75 100 125 150
Temperature [°C]
Figure 13. PGD Threshold Voltage vs Temperature
Figure 14. PGD FET ON Resistance vs Temperature
2.70
2.65
400
350
300
VUVLO2
2.60
2.55
2.50
2.45
VIN = 5.0 V
250
200
2.40
VUVLO1
VIN = 3.3 V
150
2.35
2.30
100
-50 -25
0
25 50 75 100 125 150
Temperature [°C]
-50 -25
0
25 50 75 100 125 150
Temperature [°C]
Figure 15. UVLO Voltage vs Temperature
Figure 16. EN Waiting Time vs Temperature
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Typical Performance Curves (Reference Data) – continued
1.0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
VIN = 5.0 V
0.9
VEN = 5.0 V
VEN High threshold
0.8
0.7
VEN Low threshold
0.6
VEN = 3.3 V
0.5
-50 -25
0
25 50 75 100 125 150
Temperature [°C]
-50 -25
0
25 50 75 100 125 150
Temperature [°C]
Figure 17. EN Input Voltage vs Temperature
Figure 18. EN Input Current vs Temperature
8.2
7.8
7.4
7.0
6.6
6.2
5.8
5.4
5.0
4.6
7.0
6.5
6.0
5.5
5.0
4.5
4.0
-50 -25
0
25
50
75
100 125
-50 -25
0
25
50
75
100 125
Temperature [°C]
Temperature [°C]
Figure 19. High Side FET Current Limit
vs Temperature
Figure 20. Low Side FET Current Limit
vs Temperature
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BD9S402MUF-C
Typical Performance Curves (Reference Data) – continued
0.660
0.654
0.648
0.642
0.636
0.630
0.540
VIN = 5.0 V
Release
VIN = 5.0 V
Detection
Release
0.480
0.420
Detection
0.360
-50 -25
0
25 50 75 100 125 150
Temperature [°C]
-50 -25
0
25 50 75 100 125 150
Temperature [°C]
Figure 21. Short Circuit Protection Detection Voltage
vs Temperature
Figure 22. Output Over Voltage Protection Detection Voltage
vs Temperature
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BD9S402MUF-C
Function Explanations
1. Enable Control
The device shutdown can be controlled by the voltage applied to the EN pin. When EN voltage VEN becomes
VENH (1.0 V) or more, the internal circuit is activated, and the device starts up with Soft Start.
The delay time tWAIT (230 µs, Typ) is implemented from the EN pin becoming High to VOUT starting up. When the SS pin
is open, the device starts with the built-in Soft Start Time tSS (1.0 ms, Typ). When VEN becomes VENL (0.4 V) or less, the
device is shutdown. During shutdown, the SW pin is pulled down with resistance RDIS (60 Ω, Typ) to discharge the
output voltage.
VIN
0
t
t
t
VEN
VENH
VENL
0
VOUT
0
tSS
tWAIT
Figure 23. Enable ON/OFF Timing Chart
2. Nano Pulse ControlTM
Nano Pulse ControlTM is an original technology developed by ROHM Co., Ltd. It enables to control voltage stably, which
is difficult in the conventional technology, even in a narrow SW ON time such as less than 50 ns at typical condition.
Narrow SW ON Pulse enables direct convert of high input voltage to low output voltage. The output voltage VOUT = 0.8
V or less can be output directly from the supply voltage VIN = 5.0 V at 2.2 MHz.
VIN = 5 V
VSW
(1 V/Div)
VOUT = 0.8 V
(1 V/Div)
fSW = 2.2 MHz
Figure 24. Switching Waveform (VIN = 5.0 V, VOUT = 0.8 V, IOUT = 1.0 A, fSW = 2.2 MHz)
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Function Explanations – continued
3. Power Good Function
When the FB pin voltage becomes 0.6 V (Typ) within -2 %, the open drain output MOSFET of the PGD pin turns OFF
and the PGD pin output becomes High by the pull-up resistor. When the FB pin voltage is out of 0.6 V (Typ) -4 % and
the condition continues for tPGDELFF (105 μs, Typ), the PGD pin open drain MOSFET turns ON and the PGD pin is pulled
down with an impedance of 60 Ω (Typ).When the FB pin voltage is out of 0.6 V (Typ) -4 % and the time until the voltage
returns to within -2 % is shorter than tPGDELFF, the PGD state is maintained High.
The Power Good Function also operates when output overvoltage is detected. If the FB pin voltage is outside the range
of 0.6 V (Typ) +8 % and the condition continues for tPGDELRF (105 μs, Typ) time, the open drain output MOSFET of the
PGD pin turns ON and the PGD pin is pulled down with an impedance of 60 Ω (Typ). When the FB pin voltage becomes
within 0.6 V (Typ) +6 %, the open drain output MOSFET of the PGD pin turns OFF and the output becomes High. It is
recommended that the PGD pin be pulled up to the power supply with a resistor from 2 kΩ to 100 kΩ or less.
If the power good function is not used, connect the PGD pin to OPEN or GND.
During shutdown, the PGD pin is pulled down if VAVIN is 1.2 V or more.
VOUT
-2 % (Typ)
-4 % (Typ)
PGD
tPGDELFF
t < tPGDELFF
+8 % (Typ)
+6 % (Typ)
PGD
tPGDELRF
t < tPGDELRF
Figure 25. Power Good Timing Chart
4. Output Discharge Function
When even one of the following conditions is satisfied, output is discharged with 50 Ω (Typ) resistance through the SW
pin.
• VEN becomes 0.4 V or less
• VIN becomes 2.45 V (Typ) or less (UVLO)
• VFB becomes 0.42 V (Typ) or less and remains there for 1 ms (Typ) (SCP)
• VFB becomes 0.6 V (Typ) +8 % or more (OVP)
• Tj becomes 175 °C (Typ) or more (TSD)
When all the above conditions are released, output discharge is stopped.
5. QuiCurTM
QuiCurTM is a combination of technologies that provides high-speed load response.
This technology reduces the amount of output voltage change in response to transient changes in load current.
It also reduces the capacitance of output capacitors required for power supply ICs, thereby reducing the number of
components and the board mounting area.
6. Error Amplifier Gain Switching Function
The gain of the error amplifier in the device can be switched by the GAIN pin; connecting the GAIN pin to the AVIN pin
sets the device in the fast load response mode, in which the error amplifier gain is set high, to suppress output voltage
changes during load transients. At this time, connect an output capacitor COUT of 44 µF (Typ) or more.
When the GAIN pin is connected to the AGND pin or left open, the error amplifier gain is set to low, and the mode
becomes the low output capacitance mode that operates stably even when COUT is 22 µF (Typ). However, the output
voltage change during load transients will be larger than in the fast load response mode. Do not switch the GAIN pin
connection during operation.
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BD9S402MUF-C
Protection Function
1.
Short Circuit Protection (SCP)
The Short Circuit Protection block compares the FB pin voltage with the internal reference voltage VREF. When the FB
pin voltage has fallen to 0.42 V (Typ) or less and remained there for 1 ms (Typ), SCP stops the operation for 14 ms
(Typ) and subsequently initiates a restart. This protection circuit is effective in preventing damage due to sudden and
unexpected incidents. However, the device should not be used in applications characterized by continuous operation
of the protection circuit (e.g. when a load that significantly exceeds the output current capability of the chip is connected
at all times).
Short Circuit
Protection
Short Circuit
Protection Operation
EN Pin
FB Pin
≤ 0.42 V (Typ)
ON
OFF
OFF
1.0 V or more
0.4 V or less
Enabled
Disabled
≥ 0.48 V (Typ)
-
Soft Start
VOUT
SCP Delay Time
1 ms (Typ)
SCP Delay Time
1 ms (Typ)
0.6 V
VSCP : 0.42 V (Typ)
FB
SCP OFF
SW
LOW
IOCPH
IOCPL
Inductor Current
(Output Load
Current)
Internal
HICCUP
Delay Signal
14 ms (Typ)
SCP Reset
Figure 26. Short Circuit Protection (SCP) Timing Chart
2. Over Current Protection (OCP)
The Over Current Protection function limits the current flowing to the High Side FET and Low Side FET. When the
current flowing to the High Side FET reaches IOCPH, the High Side FET is turned OFF and the peak current limit is
applied. Next, when the Low Side FET is turned ON, the current flowing to the Low Side FET is monitored and if it is
larger than IOCPL, the turn-on operation is skipped due to the current limit of the Low Side FET.
As the Low Side FET ON state continues, the inductor current decreases, and when it becomes lOCPL or less, the current
limit is released, and SW turns ON by the next set signal inside the device. This series of operations provides over
current protection. This protection circuit is effective in preventing damage due to sudden and unexpected incidents.
However, the device should not be used in applications characterized by continuous operation of the protection circuit
(e.g. when a load that significantly exceeds the output current capability of the chip is connected at all times).
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Protection Function – continued
3. Under Voltage Lock Out Protection (UVLO)
It shuts down the device when the AVIN pin voltage falls to 2.45 V (Typ) or less.
The threshold voltage has a hysteresis of 100 mV (Typ).
VAVIN
VUVLO-HYS
VUVLO1
VUVLO2
0 V
tWAIT
VOUT
Soft Start
FB
SW
Normal operation
UVLO
Normal operation
Figure 27. Under Voltage Lock Out Protection (UVLO) Timing Chart
4. Thermal Shutdown (TSD)
This is the thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be within the
IC’s maximum junction temperature rating. However, if the rating is exceeded for a continued period and the junction
temperature (Tj) rises to 175 °C (Typ), the TSD circuit activates and the output MOSFETs turn OFF. When the Tj falls
below the TSD threshold, the circuits are automatically restored to normal operation. Note that the TSD circuit operates
in a situation that exceeds the absolute maximum ratings and therefore, under no circumstances, should the TSD circuit
be used in a set design or for any purpose other than protecting the IC from heat damage.
5. Over Voltage Protection (OVP)
The device incorporates an over voltage protection circuit to minimize the output voltage overshoot when recovering
from fast load transients or output fault conditions. If the FB pin voltage becomes Output Over Voltage Protection
Detection Voltage VFB + 8% or more, the MOSFETs on the output stage are turned OFF to prevent the increase in the
output voltage. After detection, switching operation is resumed if the output decreases, the over voltage state is
released. Output Over Voltage Protection Detection Voltage and Release Voltage have a hysteresis of 2 %.
VOUT
VFB +8 %
hys
OVP Release
Threshold
FB
SW
Internal OVP
Signal
Figure 28. Over Voltage Protection (OVP) Timing Chart
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BD9S402MUF-C
Selection of Components Externally Connected
Necessary parameters in designing the power supply are as follows:
Table 1. Application Specification
Parameter
Input Voltage
Symbol
VIN
Example Value
5.0 V
Output Voltage
VOUT
1.2 V
Switching Frequency
Output Capacitor
Soft Start setting time
Maximum Output Current
fSW
2.2 MHz (Typ)
44 μF
6.0 ms (Typ)
4 A
COUT
tSS_EXT
IOUTMAX
1. Application Example
R4
VIN
PVIN
AVIN
PGD
PGD
CIN1
CIN2
Enable
VAVIN
EN
SW
FB
VOUT
L1
R100
R1
GAIN
SS
COUT1
COUT2
C4
PGND
AGND
R2
C3
Figure 29. Application Circuit
2. Switching Frequency
The switching frequency fSW is fixed at 2.2 MHz (Typ) inside the IC.
3. Output Voltage Setting
The output voltage value can be set by the feedback resistance ratio. It is recommended to use the resistor values
shown in Table 2 for each output voltage setting.
푅 +푅
1
푉푂푈푇
=
2 × 0.6 [V]
푅
2
VOUT
C4
R1
R2
FB
※
SW Minimum ON Time that BD9S402MUF-C can output
stably in the entire load range is 50 ns.
Use this value to calculate the input and output conditions
that satisfy the following equation.
0.6 V (Typ)
푉푂푈푇
[ ]
50 ns ≤
푉 × 푓
퐼푁
푆푊
Figure 30. Feedback Resistor Circuit
Table 2. Configuration Resistors and Capacitor
C4
Output Voltage VOUT
R1
R2
47 pF
47 pF
47 pF
47 pF
47 pF
33 pF
33 pF
0.8 V
0.9 V
1.0 V
1.2 V
1.5 V
1.8 V
3.3 V
13 kΩ
15 kΩ
22 kΩ
47 kΩ
15 kΩ
30 kΩ
68 kΩ
39 kΩ
30 kΩ
33 kΩ
47 kΩ
10 kΩ
15 kΩ
15 kΩ
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BD9S402MUF-C
Selection of Components Externally Connected – continued
4. Selection of Input Capacitor
The input capacitor requires a large capacitance value for CIN1 and a small capacitance value for CIN2. Use ceramic
capacitor for these capacitors. CIN1 is used to suppress the ripple noise, and CIN2 is used to suppress the switching
noise. These ceramic capacitors are effective by being placed as close as possible to the PVIN pin and the AVIN pin.
The capacitance value of CIN1 should be 4.7 μF or more. In addition, the voltage rating has to be more than twice the
typical input voltage. Set the capacitance value so that it does not fall to its minimum required value against the
capacitor value variances, temperature characteristics, DC bias characteristics, aging characteristics, etc. Use
components which are comparatively same with the components used in “Application Characteristic Data (Reference
Data)”. A nominal 4700 pF is recommended for the CIN2 capacitance value. Moreover, factors like the PCB layout and
the position of the capacitor may lead to IC malfunction. Refer to “PCB layout Design”.
5. Selection of Output LC Filter
The inductor in the DC/DC converter supplies a continuous current to the load and functions as a filter to smooth the
output voltage. When a large inductor is selected, the Inductor ripple current ΔIL and the output ripple voltage ΔVP-P are
reduced. It is the trade-off between the size and the cost of the inductor. Select a nominal inductance value between
0.33 μH and 0.68 μH.
VIN
IL
Inductor Rated Current > IOUTMAX + IL/2
IL
L
VOUT
Driver
Maximum Output Current IOUTMAX
COUT
t
Figure 31. Waveform of Current through Inductor
Figure 32. Output LC Filter Circuit
Inductor ripple current ΔIL can be represented by the following equation.
ꢁ
(
)
×
∆ꢀ퐿 = 푉푂푈푇 × 푉 − 푉푂푈푇
= 88ꢈ [mA]
퐼푁
ꢂ
ꢃꢄ
×ꢅ ×퐿
ꢆꢇ
1
where
푉
푉푂푈푇
ꢉꢁ
is the 5.0 V
is the 1.2 V
is the 0.47 µH
퐼푁
푓
푆푊
is the 2.2 MHz (Switching Frequency)
The rated current of the inductor must be larger than the sum of the maximum output current and 1/2 of the inductor
ripple current ΔIL.
Table 3. List of Inductors
Inductance
[μH]
DCR
[mΩ]
4.2
ITEMP
[A]
W x L x H
[mm]
Manufacturer
Inductor Series
14.2
5.1 x 5.3 x 3.0
TDK
TDK
SPM5030VT
SPM5030VT
SPM5030VT
TFM252012ALMA
TFM252012ALMA
ETQP3M
0.33
5.4
7.4
12.9
10.7
7.8
5.1 x 5.3 x 3.0
5.1 x 5.3 x 3.0
2.5 x 2.0 x 1.2
2.5 x 2.0 x 1.2
5.5 x 5.0 x 3.0
5.5 x 5.0 x 3.0
4.0 x 4.0 x 2.1
0.47
0.68
0.33
0.47
0.47
0.68
0.47
TDK
13.0
19.0
5.8
TDK
6.5
TDK
Panasonic
Panasonic
Coilcraft
11.6
10.2
19.7
7.6
ETQP3M
4.2
XGL4020
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BD9S402MUF-C
5.
Selection of Output LC Filter – continued
The output capacitor COUT affects the output ripple voltage characteristics. COUT satisfy the required ripple voltage
characteristics. The output ripple voltage can be represented by the following equation.
ꢁ
∆푉푅푃퐿 = ∆ꢀ퐿 × ꢊꢋ퐸푆푅 ꢌ ꢍ×퐶
ꢑ [V]
ꢆꢇ
×ꢅ
ꢎꢏꢐ
where
ꢋ퐸푆푅
is the Equivalent Series Resistance of the output capacitor.
ꢁ
∆푉푅푃퐿 = 0.88ꢈ × ꢊꢒ0 × ꢒ0ꢓ3 ꢌ ꢍ×44×ꢔ.ꢔꢑ = 9.96 [mV]
where
ꢕ푂푈푇
ꢋ퐸푆푅
is the 44 µF
is the 10 mΩ
Next, the required capacitance value of the output capacitor COUT varies depending on the GAIN pin setting. 44 µF
(Typ) or more is recommended for COUT when the GAIN pin is set to High. When the GAIN pin is set Low or open, the
device can operate in low output capacitance mode with a COUT of 22 µF (Typ) or more. In consideration of variation,
temperature characteristics, DC bias characteristics, aging characteristics, etc., use components equivalent to those
listed in Application Characteristics Data (Reference Data).
If the total value of all capacitors connected to VOUT is large, the inrush current at startup may cause the over current
protection to operate and the output may not start. In this case, set the Soft Start time to satisfy the following equation.
See 6. Selection of Soft Start Capacitor for how to set the Soft Start time.
ꢂ
×퐶
ꢎꢏꢐ(ꢐꢎꢐ퐴ꢖ)
ꢎꢏꢐ
푡푆푆_퐸푋푇
>
[s]
(퐼
ꢓ퐼
)
ꢎꢗꢘ퐻(푀ꢃꢄ) ꢆꢇꢆꢐ퐴ꢙꢐ(푀퐴ꢚ)
where:
푡푆푆_퐸푋푇
is the Soft Start setting time [s]
ꢕ푂푈푇(푇푂푇ꢛ퐿)
ꢀ푆푊푆푇ꢛ푅푇(ꢜꢛ푋)
ꢀ푂퐶푃ꢝ(ꢜ퐼푁)
푉푂푈푇
is the total value of all capacitors connected to VOUT [F]
is the maximum value of output load current expected at startup [A]
is the minimum value of OCP SW current 4.6 A (Min)
is the output voltage [V]
In case of large changing input voltage and output current, select the capacitance accordingly by verifying that the
actual application setup meets the required specification.
6. Selection of Soft Start Capacitor
Turning the EN pin High activates the Soft Start function. This causes the output voltage to rise gradually while the
current at startup is placed under control. This allows the prevention of output voltage overshoot and inrush current.
The rise time tSS_EXT depends on the value of the capacitor connected to the SS pin. The capacitance value should be
set in the range between 3300 pF and 0.1 μF.
VEN
(
)
퐶 ×ꢂ
ꢞ
퐹퐵
VENH
VENL
푡푆푆_퐸푋푇
=
[s]
퐼
ꢆꢆ
0
t
where
푡푆푆_퐸푋푇
ꢕ3
푉ꢟꢠ
is the Soft Start setting time
VOUT
is the Capacitor connected to the SS pin
is the FB pin Voltage 0.6 V (Typ)
is the SS Charge Current 1.0 µA (Typ)
ꢀ푆푆
0
t
tSS_EXT
With C3 = 0.01 μF
tWAIT
230 µs (Typ)
(
)
ꢡ.ꢡꢁ×ꢡ.ꢢ
푡푆푆_퐸푋푇
=
= 6.0 [ms]
Figure 33. Soft Start Timing chart
ꢁ.ꢡ
Turning the EN pin High without connecting capacitor to the SS pin and keeping the SS pin either OPEN condition or
10 kΩ to 100 kΩ pull up condition to power source, the output rises in tSS = 1.0 ms (Typ).
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Selection of Components Externally Connected – continued
7. Input Voltage Startup
VIN
VIN x 0.75 ꢀVOUT
VOUT
UVLO release
Figure 34. Input Voltage Startup Time
The Soft Start function starts up the device according to the specified Soft Start time. After UVLO is released, the
voltage range that can be output during the Soft Start operation is 75 % or less of the input voltage. Note that the
condition of input voltage and output voltage during the startup with Soft Start should satisfy the following expression.
ꢂ
ꢎꢏꢐ
푉 ≥
퐼푁
[V]
ꢡ.7ꢣ
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BD9S402MUF-C
Application Characteristic Data (Reference Data)
Measurement Circuit
R4
VIN
PVIN
PGD
SW
PGD
AVIN
CIN1
CIN2
Enable
VAVIN
EN
VOUT
L1
R100
R1
GAIN
SS
COUT1
COUT2
C4
PGND
FB
AGND
R2
C3
Figure 35. Measurement Schematic
Table 4. List of Components for the fast load response mode (Note 1) (GAIN = High)
NO
L1
Package
-
Parameter
0.47 μH
Part Name
SPM5030VT-R47M-D
GCM31CR70J226KE26
GCM31CR70J226KE26
GCM21BR71A106KE21
GCM155R71E472KA37
-
Type
Inductor
Manufacture
TDK
COUT1
COUT2
CIN1
CIN2
R100
R1
3216
3216
2012
1005
-
22 μF, X7R, 6.3 V
22 μF, X7R, 6.3 V
10 μF, X7R, 10 V
4700 pF, X7R, 25 V
SHORT
Ceramic Capacitor
Ceramic Capacitor
Ceramic Capacitor
Ceramic Capacitor
-
Murata
Murata
Murata
Murata
-
(Note 2)
1005
1005
1005
OPEN
1005
-
Depending on VOUT
Depending on VOUT
MCR01MZPF Series
MCR01MZPF Series
MCR01MZPF Series
-
Chip Resistor
Chip Resistor
Chip Resistor
-
ROHM
ROHM
ROHM
-
(Note 2)
R2
R4
100 kΩ, 1 %, 1/16 W
-
C3
(Note 2)
C4
Depending on VOUT
High
GCM155R71E Series
-
Ceramic Capacitor
-
Murata
-
GAIN
Table 5. List of Components for the low output capacitance mode (Note 1) (GAIN = Low)
NO
L1
Package
-
Parameter
0.47 μH
Part Name
SPM5030VT-R47M-D
GCM31CR70J226KE26
-
Type
Manufacture
Inductor
TDK
Murata
-
COUT1
COUT2
CIN1
CIN2
R100
R1
3216
OPEN
2012
1005
-
22 μF, X7R, 6.3 V
-
Ceramic Capacitor
-
10 μF, X7R, 10 V
4700 pF, X7R, 25 V
SHORT
GCM21BR71A106KE21
GCM155R71E472KA37
-
Ceramic Capacitor
Murata
Murata
-
Ceramic Capacitor
-
Chip Resistor
Chip Resistor
Chip Resistor
-
(Note 2)
1005
1005
1005
OPEN
1005
-
Depending on VOUT
Depending on VOUT
MCR01MZPF Series
MCR01MZPF Series
MCR01MZPF Series
-
ROHM
ROHM
ROHM
-
(Note 2)
R2
R4
100 kΩ, 1 %, 1/16 W
-
C3
(Note 2)
C4
Depending on VOUT
Low
GCM155R71E Series
-
Ceramic Capacitor
-
Murata
-
GAIN
(Note 1) For more information on each mode, see Function explanations 6. Error Amplifier Gain Switching Function.
(Note 2) For the part parameters, see Selection of Components Externally Connected 3. Output Voltage Setting.
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Application Characteristic Data (Reference Data) – continued
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
VIN = 5.0 V
VIN = 5.0 V
VIN = 3.3 V
VIN = 3.3 V
0.0
1.0
2.0
3.0
4.0
0.0
1.0
2.0
3.0
4.0
Output Current IOUT [A]
Output Current IOUT [A]
Figure 36. Efficiency vs Output Current
(VOUT = 1.0 V)
Figure 37. Efficiency vs Output Current
(VOUT = 1.2 V)
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
VIN = 5.0 V
VIN = 5.0 V
VIN = 3.3 V
0.0
1.0
2.0
3.0
4.0
0.0
1.0
2.0
3.0
4.0
Output Current IOUT [A]
Output Current IOUT [A]
Figure 38. Efficiency vs Output Current
(VOUT = 1.8 V)
Figure 39. Efficiency vs Output Current
(VOUT = 3.3 V)
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BD9S402MUF-C
Application Characteristic Data (Reference Data) – continued
1.212
1.010
1.008
1.006
1.004
1.002
1.000
0.998
0.996
0.994
0.992
0.990
1.208
1.204
1.200
1.196
1.192
1.188
VIN = 5.0 V
VIN = 5.0 V
VIN = 3.3 V
VIN = 3.3 V
0.0
1.0
2.0
3.0
4.0
0.0
1.0
2.0
3.0
4.0
Output Current IOUT [A]
Output Current IOUT [A]
Figure 40. Output Voltage vs Output Current
(VOUT = 1.0 V)
Figure 41. Output Voltage vs Output Current
(VOUT = 1.2 V)
1.818
1.812
1.806
1.800
1.794
1.788
1.782
3.33
3.32
3.31
3.30
3.29
3.28
3.27
VIN = 5.0 V
VIN = 5.0 V
VIN = 3.3 V
0.0
1.0
2.0
3.0
4.0
0.0
1.0
2.0
3.0
4.0
Output Current IOUT [A]
Output Current IOUT [A]
Figure 42. Output Voltage vs Output Current
(VOUT = 1.8 V)
Figure 43. Output Voltage vs Output Current
(VOUT = 3.3 V)
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BD9S402MUF-C
Application Characteristic Data (Reference Data) – continued
80
60
180
135
90
80
60
180
135
90
VIN = 5.0 V
GAIN = Low
VIN = 5.0 V
GAIN = High
40
40
20
45
20
45
0
0
0
0
-20
-40
-60
-80
-45
-90
-135
-180
-20
-40
-60
-80
-45
-90
-135
-180
Gain
Gain
Phase
Phase
1
10
100
1000
1
10
100
1000
Frequency [kHz]
Frequency [kHz]
Figure 44. Frequency Characteristics
(VOUT = 1.0 V, GAIN = High, IOUT = 2 A)
Figure 45. Frequency Characteristics
(VOUT = 1.0 V, GAIN = Low, IOUT = 2 A)
80
60
180
135
90
80
60
180
135
90
VIN = 5.0 V
GAIN = Low
VIN = 5.0 V
GAIN = High
40
40
20
45
20
45
0
0
0
0
-20
-40
-60
-80
-45
-90
-135
-180
-20
-40
-60
-80
-45
-90
-135
-180
Gain
Gain
Phase
Phase
1
10
100
1000
1
10
100
1000
Frequency [kHz]
Frequency [kHz]
Figure 46. Frequency Characteristics
(VOUT = 1.2 V, GAIN = High, IOUT = 2 A)
Figure 47. Frequency Characteristics
(VOUT = 1.2 V, GAIN = Low, IOUT = 2 A)
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BD9S402MUF-C
Application Characteristic Data (Reference Data) – continued
80
60
180
135
90
80
60
180
135
90
VIN = 5.0 V
GAIN = Low
VIN = 5.0 V
GAIN = High
40
40
20
45
20
45
0
0
0
0
-20
-40
-60
-80
-45
-90
-135
-180
-20
-40
-60
-80
-45
-90
-135
-180
Gain
Gain
Phase
Phase
1
10
100
1000
1
10
100
1000
Frequency [kHz]
Frequency [kHz]
Figure 48. Frequency Characteristics
(VOUT = 1.8 V, GAIN = High, IOUT = 2 A)
Figure 49. Frequency Characteristics
(VOUT = 1.8 V, GAIN = Low, IOUT = 2 A)
80
60
180
135
90
80
60
180
135
90
VIN = 5.0 V
GAIN = High
VIN = 5.0 V
GAIN = Low
40
40
20
45
20
45
0
0
0
0
-20
-40
-60
-80
-45
-90
-135
-180
-20
-40
-60
-80
-45
-90
-135
-180
Gain
Gain
Phase
Phase
1
10
100
1000
1
10
100
1000
Frequency [kHz]
Frequency [kHz]
Figure 50. Frequency Characteristics
(VOUT = 3.3 V, GAIN = High, IOUT = 2 A)
Figure 51. Frequency Characteristics
(VOUT = 3.3 V, GAIN = Low, IOUT = 2 A)
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Application Characteristic Data (Reference Data) – continued
Time: 20 μs/Div
VOUT: 50 mV/Div
Time: 20 μs/Div
VOUT: 50 mV/Div
IOUT: 1 A/Div
IOUT: 1 A/Div
VOUT = 1.0 V, VIN = 5.0 V, GAIN = High,
IOUT = 0.0 A ↔ 2.0 A (1 A/μs)
VOUT = 1.0 V, VIN = 5.0 V, GAIN = Low,
IOUT = 0.0 A ↔ 2.0 A (1 A/μs)
Figure 52. Load Transient Response
Figure 53. Load Transient Response
(VOUT = 1.0 V, GAIN = High)
(VOUT = 1.0 V, GAIN = Low)
Time: 20 μs/Div
VOUT: 50 mV/Div
Time: 20 μs/Div
VOUT: 50 mV/Div
IOUT: 1 A/Div
IOUT: 1 A/Div
VOUT = 1.2 V, VIN = 5.0 V, GAIN = High,
IOUT = 0.0 A ↔ 2.0 A (1 A/μs)
VOUT = 1.2 V, VIN = 5.0 V, GAIN = Low,
IOUT = 0.0 A ↔ 2.0 A (1 A/μs)
Figure 54. Load Transient Response
Figure 55. Load Transient Response
(VOUT = 1.2 V, GAIN = High)
(VOUT = 1.2 V, GAIN = Low)
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BD9S402MUF-C
Application Characteristic Data (Reference Data) – continued
Time: 20 μs/Div
VOUT: 50 mV/Div
Time: 20 μs/Div
VOUT: 50 mV/Div
IOUT: 1 A/Div
IOUT: 1 A/Div
VOUT = 1.8 V, VIN = 5.0 V, GAIN = High,
IOUT = 0.0 A ↔ 2.0 A (1 A/μs)
VOUT = 1.8 V, VIN = 5.0 V, GAIN = Low,
IOUT = 0.0 A ↔ 2.0 A (1 A/μs)
Figure 56. Load Transient Response
Figure 57. Load Transient Response
(VOUT = 1.8 V, GAIN = High)
(VOUT = 1.8 V, GAIN = Low)
Time: 20 μs/Div
VOUT: 50 mV/Div
Time: 20 μs/Div
VOUT: 50 mV/Div
IOUT: 1 A/Div
IOUT: 1 A/Div
VOUT = 3.3 V, VIN = 5.0 V, GAIN = High,
IOUT = 0.0 A ↔ 2.0 A (1 A/μs)
VOUT = 3.3 V, VIN = 5.0 V, GAIN = Low,
IOUT = 0.0 A ↔ 2.0 A (1 A/μs)
Figure 58. Load Transient Response
Figure 59. Load Transient Response
(VOUT = 3.3 V, GAIN = High)
(VOUT = 3.3 V, GAIN = Low)
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BD9S402MUF-C
PCB Layout Design
PCB layout design for DC/DC converter is very important. Appropriate layout can avoid various problems concerning
power supply circuit. Figure 60 to Figure 62 show the current path in a buck DC/DC converter circuit. The Loop 1 in
Figure 60 is a current path when High Side Switch is ON and Low Side Switch is OFF, the Loop 2 in Figure 61 is when
High Side Switch is OFF and Low Side Switch is ON. The thick line in Figure 62 shows the difference between Loop1
and Loop2. The current in thick line change sharply each time the switching element High Side and Low Side Switch
change from OFF to ON, and vice versa. These sharp changes induce a waveform with harmonics in this loop. Therefore,
the loop area of thick line that is consisted by input capacitor and IC should be as small as possible to minimize noise.
For more details, refer to application note of switching regulator series “PCB Layout Techniques of Buck Converter”.
Loop1
VIN
VOUT
L
High Side Switch
CIN
COUT
Low Side Switch
GND
GND
Figure 60. Current Path when High Side Switch = ON, Low Side Switch = OFF
VIN
VOUT
L
High Side Switch
CIN
COUT
Loop2
Low Side Switch
GND
GND
Figure 61. Current Path when High Side Switch = OFF, Low Side Switch = ON
VIN
VOUT
L
CIN
COUT
High Side FET
Low Side FET
GND
GND
Figure 62. Difference of Current and Critical Area in Layout
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BD9S402MUF-C
PCB Layout Design – continued
When designing the PCB layout, Pay extra attention to the following points.
• Connect the input capacitor CIN as close as possible to the PVIN pin on the same plane as the IC.
• Switching nodes such as SW are susceptible to noise due to AC coupling with other nodes. Route the inductor pattern
as thick and as short as possible.
• R1 and R2 shall be located as close as possible to the FB pin and the wiring between R1 and R2 to the FB pin shall be
as short as possible.
• Provide line connected to FB far from the SW nodes.
• Influence from the switching noise can be minimized, by isolating Power (Input and Output Capacitor) GND and
Reference (FB) GND.
• R100 is provided for the measurement of feedback frequency characteristics (optional). By inserting a resistor into R100
,
it is possible to measure the frequency characteristics of feedback (phase margin) using FRA etc. R100 is short-
circuited for normal use.
L1
CIN2
CIN1
IC
C3
COUT1
R2
R1
C4
COUT2
R100
Example of Evaluation Board Layout (Top View)
Example of Evaluation Board Layout (Bottom View)
Figure 63. Example of Evaluation Board Layout
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BD9S402MUF-C
Power Dissipation
For thermal design, be sure to operate the IC within the following conditions.
(Since the temperatures described hereunder are all guaranteed temperatures, take margin into account.)
1. The ambient temperature Ta is to be 125 °C or less.
2. The chip junction temperature Tj is to be 150 °C or less.
The chip junction temperature Tj can be considered in the following two patterns:
1. To obtain Tj from the package surface center temperature Tt in actual use
ꢤ푗 = ꢤ푡 ꢌ 휓퐽푇 × ꢥ [°C]
2. To obtain Tj from the ambient temperature Ta
ꢤ푗 = ꢤ푎 ꢌ 휃퐽ꢛ × ꢥ [°C]
Where:
휓퐽푇
휃퐽ꢛ
is junction to top characterization parameter (Thermal Resistance)
is junction to ambient (Thermal Resistance)
The heat loss W of the IC can be obtained by the formula shown below:
푉푂푈푇
푉푂푈푇
ꢔ
ꢥ = ꢋ푂푁ꢝ × ꢀ푂푈푇
×
ꢌ ꢋ푂푁퐿 × ꢀ푂푈푇ꢔ × ꢦꢒ −
ꢧ
푉
푉
퐼푁
퐼푁
ꢁ
(
)
ꢌ푉 × ꢀ퐶퐶 ꢌ × 푡푟 ꢌ 푡푓 × 푉 × ꢀ푂푈푇 × 푓
[W]
퐼푁
퐼푁
푆푊
ꢔ
Where:
ꢋ푂푁ꢝ
ꢋ푂푁퐿
ꢀ푂푈푇
is the High Side FET ON Resistance (Electrical Characteristics) [Ω]
is the Low Side FET ON Resistance (Electrical Characteristics) [Ω]
is the Output Current [A]
푉푂푈푇
is the Output Voltage [V]
푉
퐼푁
is the Input Voltage [V]
ꢀ퐶퐶
푡푟
푡푓
is the Circuit Current (Electrical Characteristics) [A]
is the Switching Rise Time [s] (Typ: 2 ns)
is the Switching Fall Time [s] (Typ: 2 ns)
푓
푆푊
is the Switching Frequency (Electrical Characteristics) [Hz]
tr
(2 ns)
tf
(2 ns)
VIN
ꢔ
1. ꢋ푂푁ꢝ × ꢀ푂푈푇
1
VSW
ꢔ
2. ꢋ푂푁퐿 × ꢀ푂푈푇
3. ꢁ × (푡푟 ꢌ 푡푓) × 푉 × ꢀ푂푈푇 × 푓
퐼푁
푆푊
ꢔ
GND
3
2
1
fsw
Figure 64. SW Waveform
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BD9S402MUF-C
I/O Equivalence Circuits (Note 1)
6. FB
8. GAIN
AVIN
50 kΩ
FB
GAIN
10 kΩ
4 kΩ
2 kΩ
500 kΩ
AGND
AGND
AGND AGND
9. SS
10.11.12. SW
PVIN
SS
20 kΩ
100 kΩ
AVIN
100 kΩ
SW
50 Ω
10 kΩ
AGND AGND
AGND
AGND
PGND
PGND
14. PGD
15. EN
EN
100 kΩ
150 kΩ
PGD
100 kΩ
50 Ω
AVIN
10 kΩ
850 kΩ
AGND
AGND
AGND
AGND
AGND
(Note 1) Resistance value is typical.
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BD9S402MUF-C
Operational Notes
1.
2.
3.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply
pins.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic
capacitors.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. However,
pins that drive inductive loads (e.g. motor driver outputs, DC-DC converter outputs) may inevitably go below ground
due to back EMF or electromotive force. In such cases, the user should make sure that such voltages going below
ground will not cause the IC and the system to malfunction by examining carefully all relevant factors and conditions
such as motor characteristics, supply voltage, operating frequency and PCB wiring to name a few.
4.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
6.
Recommended Operating Conditions
The function and operation of the IC are guaranteed within the range specified by the recommended operating
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical
characteristics.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.
Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing
of connections.
7.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should
always be turned off completely before connecting or removing it from the test setup during the inspection process. To
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and
storage.
8.
9.
Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power
supply or ground line.
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BD9S402MUF-C
Operational Notes – continued
10. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
Pin B
B
E
C
Pin A
B
C
E
P
P+
P+
N
P+
P
P+
N
N
N
N
N
N
N
Parasitic
Elements
Parasitic
Elements
P Substrate
GND GND
P Substrate
GND
GND
Parasitic
Elements
Parasitic
Elements
N Region
close-by
Figure 65. Example of Monolithic IC Structure
11. Ceramic Capacitor
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
12. Thermal Shutdown Circuit (TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj
falls below the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat
damage.
13. Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
14. Functional Safety
“ISO 26262 Process Compliant to Support ASIL-*”
A product that has been developed based on an ISO 26262 design process compliant to the ASIL level described in
the datasheet.
“Safety Mechanism is Implemented to Support Functional Safety (ASIL-*)”
A product that has implemented safety mechanism to meet ASIL level requirements described in the datasheet.
“Functional Safety Supportive Automotive Products”
A product that has been developed for automotive use and is capable of supporting safety analysis with regard to the
functional safety.
Note: “ASIL-*” is stands for the ratings of “ASIL-A”, “-B”, “-C” or “-D” specified by each product's datasheet.
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BD9S402MUF-C
Ordering Information
B D 9 S 4 0 2 M U F -
C E 2
Package
MUF: VQFN16FV3030
Product class
C for Automotive
Packaging and forming specification
E2: Embossed tape and reel
Marking Diagram
VQFN16FV3030 (TOP VIEW)
Part Number Marking
D 9 S
4 0 2
LOT Number
Pin 1 Mark
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BD9S402MUF-C
Physical Dimension and Packing Information
Package Name
VQFN16FV3030
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BD9S402MUF-C
Revision History
Date
Revision
001
Changes
New Release
10.May.2022
www.rohm.com
© 2020 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
TSZ02201-0T4T0AA016900-1-2
10.May.2022 Rev.001
38/38
Notice
Precaution on using ROHM Products
(Note 1)
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.
However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble
cleaning agents for cleaning residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PAA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Daattaasshheeeett
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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