BSM120C12P2C201_技术文档

SiC Power Module

Datasheet

BSM120C12P2C201

Application

Circuit diagram

 Motor drive

1

 Converter

10(N.C)

 Photovoltaics, wind power generation.

9

8(N.C)

3,4

Features

5

6

7(N.C)

1) Low surge, low switching loss.

2

2) High-speed switching possible.

*Do not connect anything to NC pin.

3) Reduced temperature dependence.

Construction

This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM.

Dimensions & Pin layout (Unit : mm)

4

3

1

2

www.rohm.com

8.Jul.2019 - Rev.001

1/10

Datasheet

BSM120C12P2C201

Absolute maximum ratings (T_j= 25°C)

Parameter

Conditions

Limit

1200

22

Symbol

V_DSS

Unit

V

Drain-source voltage

G-S short

V_DSS

Repetitive reverse voltage

Gate-source voltage()

Gate-source voltage()

G - S Voltage (t_surge<300ns)

Clamp diode

V_GSS

D-S short

6

10 to 26

134

V_{GSS_surge}

D-S short

I_D

DC (T_c=60°C)

Drain current *¹

Pulse (T_c=60°C) 1msꢀ*²

Pulse (T_c=60°C) 10usꢀ*²

DC (T_c=60°C ) V_GS=18V

Pulse (Tc=60°C) 1ms V_GS=18Vꢀ*²

Pulse (Tc=60°C) 10us V_GS=18Vꢀ*²

DC (T_c=60°C ) V_GS=18V

I_DRM

I_S

240

360

134

Source current *¹

I_SRM

I_F

240

A

360

134

Pulse (Tc=60°C) 1ms V_GS=18Vꢀ*²

Pulse (Tc=60°C) 10us V_GS=18Vꢀ*²

T_c=25°C

Forward curent (clamp diode) *¹

I_FRM

Ptot

T_jmax

T_jop

T_stg

240

360

Total power disspation *⁴

Max Junction Temperature

Junction temperature

935

W

175

°C

40 to150

40 to125

Storage temperature

Terminals to baseplate,

f=60Hz AC 1min.

Isolation voltage

Mounting torque

Visol

2500

Vrms

N · m

4.5

3.5

Main Terminals : M6 screw



Mounting to heat shink : M5 screw

(*1) Case temperature (T_c) is defined on the surface of base plate just under the chips.

(*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T_{j max.}

(*3) T_jis less than 175°C

Example of acceptable V_GSwaveform

26V

t_surge

22V

0V

t_surge

6V

10V

www.rohm.com

8.Jul.2019 - Rev.001

2/10

Datasheet

BSM120C12P2C201

Electrical characteristics (T_j=25°C)

Parameter

Conditions

Symbol

Min. Typ. Max.

Unit

V

T_j=25°C

T_j=125°C

T_j=150°C

2.1

3.1

3.4

-

3.2

－

5.2

10

2.1

-

－

On-state static

V_DS(on)I_D120A, V_GS=18V

Drain-Source Voltage

Drain cutoff current

V_DS=1200V, V_GS=0V

I_F=120A

I_DSS

V_F

A

T_j=25°C

T_j=125°C

T_j=150°C

1.7

2.2

2.4

－

Forwad Voltage

Reverse curent

V

3.2

2

－

1.6

－

0.5

－

-

I_RRMClamp diode

mA

V

V_DS=10V, I_D=22mA

V_GS=22V, V_DS=0V

V_GS= 6V, V_DS=0V

Gate-source threshold voltage V_GS(th)

-

4

0.5

－

-

－

I_GSS

Gate-source leakage current

A

t_d(on)

t_r

30

40

20

165

45

14

1.8

25

12.5

20

10.5

14

－

V_GS(on)=18V, V_GS(off)=0V

V_DS=600V

I_D=120A

Switching characteristics

t_rr

ns

R_G=2.2

t_d(off)

t_f

inductive load

Input capacitance

Gate Registance

Stray Inductance

V_DS=10V, V_GS=0V, 1MHz

Ciss

nF



nH

R_GintT_j=25°C

Ls

-

Terminal to heat sink

-

mm

Creepage Distance

Clearance Distance

-

Terminal to terminal

Terminal to heat sink

Terminal to terminal

DMOS (1/2 module) *⁴

SBD (1/2 module) *⁴

-

0.16

0.21

－

Junction-to-case thermal

resistance

R_th(j-c)

R_th(c-f)

－

°C/W

Case to heat sink, per 1 module,

Thermal grease applied *⁵

Case-to-heat sink

Thermal resistance

-

0.035

-

(*4) Measurement of Tc is to be done at the point just under the chip.

(*5) Typical value is measured by using thermally

conductive grease of λ=0.9W/(m・K).

＜Wavelength for Switching Test＞

Eon=Id×Vds

Eoff=Id×Vds

(*6) SiC devices have lower short cuicuit

trr

withstand capability due to high current density.

Vsurge

Please be advised to pay careful attention

to short cuicuit accident and try to

VDS

90%

adjust protection time to shutdown them

as short as possible.

10%

2%

ID

(*7) If the Product is used beyond absolute maximum

ratings defined in the Specifications, as its internal

structure may be dameged, please replace

such Product with a new one.

90%

10%

V

GS

td(off)

tr

tf

td(on)

www.rohm.com

8.Jul.2019 - Rev.001

3/10

Datasheet

BSM120C12P2C201

Electrical characteristic curves (Typical)

Fig.2 Drain-Source Voltage vs. Drain Current

Fig.1 Typical Output Characteristics [ T_j=25ºC ]

240

8

T_j=25ºC

V_GS=18V

7

V_GS=16V

V_GS=18V

V_GS=20V

180

120

60

6

T_j=125ºC

V_GS=14V

V_GS=12V

V_GS=10V

6

5

T_j=150ºC

4

3

T_j=25ºC

ꢀ²

1

0

2

4

8

0

40

80

120

160

200

240

Drain-Source Voltage : V_DS[V]

Drain Current : I_D[A]

Fig.4 Static Drain - Source On-State Resistance

vs. Junction Temperature

Fig.3 Drain-Source Voltage vs.

Gate-Source Voltage [ T_j=25ºC ]

6

0.06

T_j=25ºC

5

0.05

V_GS=14V

V_GS=12V

4

0.04

3

0.03

I_D=120A

V_GS=16V

V_GS=18V

I_D=100A

2

0.02

V_GS=20V

I_D=60A

1

0.01

I_D=20A

I_D=120A

0

12

14

16

18

20

22

24

0

50

100

150

200

250

Junction Temperature : T_j[ºC]

Gate-Source Voltage : V_GS[V]

www.rohm.com

8.Jul.2019 - Rev.001

4/10

Datasheet

BSM120C12P2C201

Electrical characteristic curves (Typical)

Fig.6 Forward characteristic of Diode

Fig.5 Forward characteristic of Diode

1000

240

200

160

120

80

T_j=25ºC

100

T_j=150ºC

T_j=125ºC

10

ꢀ

40

0

1

0

1

2

3

4

5

0

1

2

3

4

5

Source-Drain Voltage : V_SD[V]

Fig.8 Drain Current vs. Gate-Source Voltage

Fig.7 Drain Current vs. Gate-Source Voltage

240

1.E+03

V_DS=20V

1.E+02

V_DS=20V

200

T_j=150ºC

1.E+01

T_j=125ºC

160

T_j=150ºC

1.E+00

T_j=25ºC

120

1.E-01

1.E-02

1.E-03

1.E-04

T_j=125ºC

80

40

0

T_j=25ºC

0

5

10

15

0

5

10

15

Gate-Source Voltage : V_GS[V]

www.rohm.com

8.Jul.2019 - Rev.001

5/10

Datasheet

BSM120C12P2C201

Electrical characteristic curves (Typical)

Fig.9 Switching Characteristics [ T_j=25ºC ]

Fig.10 Switching Characteristics [ T_j=125ºC ]

1000

td(off)

tr

100

tf

100

tr

tf

td(on)

10

V_DS=600V

V_GS(on)=18V

V_GS(off)=0V

R_G=2.2

V_GS(on)=18V

V_GS(off)=0V

R_G=2.2

Inductive Load

1

0

100

200

300

0

100

200

300

Drain Current : I_D[A]

Fig.11 Switching Characteristics [ T_j=150ºC ]

Fig.12 Switching Loss vs. Drain Current

[ T_j=25ºC ]

8

1000

V_DS=600V

V_GS(on)=18V

7

td(off)

E_on

V_GS(off)=0V

6

R_G=2.2

Inductive Load

tf

tr

100

10

1

5

4

E_off

3

td(on)

V_DS=600V

V_GS(on)=18V

V_GS(off)=0V

R_G=2.2

2

1

E_rr

Inductive Load

0

100

200

300

0

100

200

300

Drain Current : I_D[A]

www.rohm.com

8.Jul.2019 - Rev.001

6/10

Datasheet

BSM120C12P2C201

Electrical characteristic curves (Typical)

Fig.13 Switching Loss vs. Drain Current

Fig.14 Switching Loss vs. Drain Current

[ T_j=150ºC ]

[ T_j=125ºC ]

8

7

6

5

4

3

2

1

0

V_DS=600V

7

V_GS(on)=18V

V_GS(off)=0V

R_G=2.2

V_GS(on)=18V

V_GS(off)=0V

R_G=2.2

Inductive Load

6

E_on

Inductive Load

5

4

3

2

1

0

E_off

E_rr

0

100

200

300

0

100

200

300

Drain Current : I_D[A]

Fig.15 Recovery Characteristics vs.

Fig.16 Recovery Characteristics vs.

Drain Current [ T_j=25ºC ]

Drain Current [ T_j=125ºC ]

100

10

100

10

1

Irr

trr

Irr

10

1

10

V_DS=600V

V_GS(on)=18V

V_GS(off)=0V

R_G=2.2

V_DS=600V

V_GS(on)=18V

V_GS(off)=0V

R_G=2.2

Inductive Load

1

0.1

1

0

100

200

300

0

100

200

300

Drain Current : I_D[A]

www.rohm.com

8.Jul.2019 - Rev.001

7/10

Datasheet

BSM120C12P2C201

Electrical characteristic curves (Typical)

Fig.17 Recovery Characteristics vs.

Drain Current [ T_j=150ºC ]

100

Fig.18 Switching Characteristics vs. Gate

Resistance [ T_j=25ºC ]

10000

1000

100

10

V_DS=600V

I_D=120A

Irr

V_GS(on)=18V

V_GS(off)=0V

td(off)

Inductive Load

tr

trr

10

1

tf

V_DS=600V

V_GS(on)=18V

V_GS(off)=0V

R_G=2.2

td(on)

Inductive Load

1

0.1

10

0

100

200

300

1

10

Gate Resistance : R_G[]

100

Drain Current : I_D[A]

Fig.20 Switching Characteristics vs. Gate

Resistance [ T_j=150ºC ]

10000

Fig.19 Switching Characteristics vs. Gate

Resistance [ T_j=125ºC ]

10000

V_DS=600V

I_D=120A

V_GS(on)=18V

V_GS(off)=0V

V_DS=600V

I_D=120A

V_GS(on)=18V

td(off)

V_GS(off)=0V

Inductive Load

1000

100

10

1000

tf

100

tr

td(on)

tr

td(on)

10

1

10

Gate Resistance : R_G[]

100

1

10

100

Gate Resistance : R_G[]

www.rohm.com

8.Jul.2019 - Rev.001

8/10

Datasheet

BSM120C12P2C201

Electrical characteristic curves (Typical)

Fig.21 Switching Loss vs. Gate Resistance

Fig.22 Switching Loss vs. Gate Resistance

[ T_j=25ºC ]

[ T_j=125ºC ]

30

20

10

0

V_DS=600V

I_D=120A

V_GS(on)=18V

V_GS(off)=0V

Inductive Load

V_DS=600V

I_D=120A

V_GS(on)=18V

V_GS(off)=0V

Inductive Load

20

10

0

E_on

E_off

E_rr

1

10

Gate Resistance : R_G[]

100

1

10

Gate Resistance : R_G[]

100

Fig.23 Switching Loss vs. Gate Resistance

Fig.24 Typical Capacitance vs. Drain-Source

Voltage

[ T_j=150ºC ]

30

1.E-07

V_DS=600V

I_D=120A

V_GS(on)=18V

V_GS(off)=0V

C_iss

1.E-08

1.E-09

1.E-10

1.E-11

Inductive Load

20

10

0

E_on

C_oss

C_rss

E_off

T_j=25ºC

V_GS=0V

1MHz

E_rr

0.01

0.1

1

10

100

1000

1

10

Gate Resistance : R_G[]

100

Drain-Source Voltage : V_DS[V]

www.rohm.com

8.Jul.2019 - Rev.001

9/10

Datasheet

BSM120C12P2C201

Electrical characteristic curves (Typical)

Fig.25 Gate Charge Characteristics

Fig.26 Normalized Transient Thermal

Impedance

[ T_j=25ºC ]

25

1

I_D=120A

T_j=25ºC

V_DS=600V

20

15

10

5

0.1

Single Pulse

T_c=25ºC

Per unit base

DMOS part : 0.16K/W

SBD part : 0.21K/W

0

0.01

0

200

400

600

800

0.0001 0.001

0.01

0.1

1

10

Total Gate charge : Qg [nC]

Time [s]

www.rohm.com

8.Jul.2019 - Rev.001

10/10

Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions.

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products specified in this document are not designed to be radiation tolerant.

7) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, and power transmission systems.

8) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

10) ROHM has used reasonable care to ensure the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting

non-compliance with any applicable laws or regulations.

12) When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

regulations, including without limitation the US Export Administration Regulations and the Foreign

Exchange and Foreign Trade Act.

13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of

ROHM.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

www.rohm.com

R1107

S

Daattaasshheeeett

General Precaution

1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.

ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny

ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior

notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s

representative.

3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all

information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or

liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or

concerning such information.

Notice – WE

Rev.001


型号：	BSM120C12P2C201
厂家：	ROHM
描述：	本品是使用ROHM生产的SiC-DMOSFET和SiC肖特基势垒二极管的斩波结构的SiC MOSFET模块。二极管
文件：	总12页 (文件大小：1390K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BSM120C12P2C201 [ROHM]

相关型号：

BSM120D12P2C005

BSM121

BSM121AR

BSM121AR(C)

BSM141

BSM150GAL100D

BSM150GAL120D

BSM150GAL120DLC

BSM150GAL120DN2

BSM150GAL120DN2E3166

BSM150GAR120DN2

BSM150GAR120DN2HOSA1