BSM600C12P3G201 [ROHM]

BSM600C12P3G201是由SiC-UMOSFET和SiC-SBD构成的斩波模块。适合电机驱动、转换器、光发电及风力发电用途。 SiC支持页面评估板应用实例罗姆SiC器件什么是SiC？电子基础;


型号：	BSM600C12P3G201
厂家：	ROHM
描述：	BSM600C12P3G201是由SiC-UMOSFET和SiC-SBD构成的斩波模块。适合电机驱动、转换器、光发电及风力发电用途。 SiC支持页面评估板应用实例罗姆SiC器件什么是SiC？电子基础电子电机驱动转换器
文件：	总11页 (文件大小：921K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SiC Power Module

Datasheet

BSM600C12P3G201

òApplication

òCircuit diagram

ñ Motor drive

ñ Converter

ñ Photovoltaics, wind power generation.

9(N.C)

3,4

òFeatures

1) Low surge, low switching loss.

2) High-speed switching possible.

3) Reduced temperature dependence.

ꢀTC

※Do not connect anything to NC pin.

òConstruction

This product is a chopper module consisting of SiC-UMOSFET and SiC-SBD from ROHM.

òDimensions & Pin layout (Unit : mm)

SS1 G1

TH1 TH2

10 11

G2 SS2

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30.Mar.2018 - Rev.001

BSM600C12P3G201

Datasheet

òAbsolute maximum ratings (T_j= 25°C)

Symbol

V_DSS

V_RRM

V_GSS

V_GSSsurge

I_D

Parameter

Conditions

G-S short

Ratings

Unit

1200

Drain - Source Voltage

Clamp diode

Repetitive Reverse Voltage

Gate - Source Voltage (+)

Gate - Source Voltage (-)

G - S Voltage (t_surge<300nsec)

D-S short

-4

D-S short

-4 to 26

576

DC(Tc=60°C) VGS=18V

DC(Tc=50℃) VGS=18V

Pulse (Tc = 60°C） 1ms VGS=18V

DC(Tc=60°C) VGS=18V

DC(Tc=50°C) VGS=18V

Pulse (Tc = 60°C） 1ms VGS=18V

Pulse (Tc = 60°C） 1ms VGS=0V

DC(Tc = 60℃)

I_D

Drain Current _{Note 1)}

600

I_DRM

I_S

1200

576

Note 2)

I_S

600

Source Current _{Note 1)}

I_SRM

I_F

1200

600

Note 2)

Forward Current

(clamp diode) _{Note 1)}

I_FRM

Pulse (Tc = 60℃） 1ms

1200

2460

175

Note 2）

Total Power Dissipation _{Note 3)}

Max Junction Temperature

Junction Temperature

Storage Temperature

Isolation Voltage

Ptot

Tjmax

Tjop

Tc = 25°C

-40 to 150

-40 to 125

2500

4.5

°C

Tstg

Visol

Terminals to baseplate f = 60Hz AC 1 min.

Main Terminals : M6 screw

Vrms

N ・m

Mounting Torque

Mounting to heat sink M5 screw

3.5

Note 1) Case temperature (Tc) is defined on the surface of base plate just under the chips.

Note 2) Repetition rate should be kept within the range where temperature rise if die should not

exceed Tjmax.

Note 3) Tj is less than 175°C.

Example of acceptable VGS waveform

+26V

surge

+22V

-4V

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BSM600C12P3G201

Datasheet

òElectrical characteristics (T_j=25°C)

Ratings

Min. Typ. Max.

Parameter

Symbol

VDS(on)

IDSS

Conditions

Unit

Tj=25°C

－

1.8

2.6

2.9

2.4

On-state static

Drain-Source

Voltage

ID=600A,VGS=18V

Tj=125°C

Tj=150°C

－

4.1

VDS=1200V,VGS=0V

I_F=600A

－

Drain Cutoff Current

Forward Voltage

Reverse current

Tj=25°C

－

1.8

2.4

2.6

2.2

－

Tj=125°C

Tj=150°C

3.2

Clamp diode

IRRM

VGS(th)

IGSS

－

Gate-Source

Threshold Voltage

Gate-Source

VDS=10V,ID=182mA

2.7

5.6

VGS=22V,VDS=0V

VGS=-4V,VDS=0V

－

-0.5

－

0.5

－

µA

Leak Current

td(on)

VGS(on)=18V、VGS(off)=0V

VDS=600V

Switching

Characteristics

trr

ID=600A

RG(on)=0.2 ohm, RG(off)=0.2 ohm

Inductive load

td (off)

240

VDS=10V,VGS=0V,200kHz

Tj=25°C

Ciss

RGint

R25

Ω

Input Capacitance

Gate Registance

NTC Rated Resistance

NTC B Value

1.4

5.0

3370

10.0

16.7

12.0

11.0

－

kΩ

B50/25

Stray Inductance

Terminal to heat sink

Terminal to terminal

Creepage Distance

Clearance Distance

Terminal to heat sink

Terminal to terminal

UMOSFET（1/2 module） _{Note 4)}

SBD（1/2 module） _{Note 4)}

Junction-to -Case

Thermal Resistance

Case-to -heat sink

Thermal Resistance

Rth(j-c)

Rth(c-f)

－

°C/kW

Case to heat sink, per 1 module. Thermal grease

applied. _{Note 5）}

－

Note 4) Measurement of Tc is to be done at the

point just under the chip.

＜Wavelength for Switching Test＞

Eon=Id×Vds

Eoff=Id×Vds

Note 5) Typical value is measured by using

trr

thermally conductive grease of λ=0.9W/(m・K).

Vsurge

SiC devices have lower short cuicuit

withstand capability due to high current density.

Please be advised to pay careful attention to

short cuicuit accident and try to adjust

protection time to shutdown them as short

as possible.

Note 6)

VDS

90%

10%

If the Product is used beyond absolute maximum

ratings defined in the Specifications, as its

internal structure may be dameged, please

replace such Product with a new one.

Note 7)

90%

10%

VGS

td(off)

td(on)

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30.Mar.2018 - Rev.001

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BSM600C12P3G201

Datasheet

òElectrical characteristic curves (Typical)

Fig.2 Drain source voltage characteristic

(TYP)

Fig.1 Output characteristic 25°Cꢀ(TYP)

1200

VGS=16V

1000

VGS=18V

VGS=20V

VGS=14V

Tj=150℃

VGS=18V

800

600

400

200

Tj=125℃

VGS=12V

VGS=10V

Tj=25℃

200 400 600 800 1000 1200

Drain current ID (A)

Drain source voltage VDS (V)

Fig.3 Drain source voltage characteristic

Fig.4 Ron vs Tj characteristic (TYP)

25°C (TYP)

VGS=12V

VGS=14V

VGS=16V

VGS=18V

Tj=25℃

VGS=20V

ID=600A

ID=500A

ID=400A

ID=300A

ID=600A

100

150

200

250

Gate source voltage VGS (V)

Junction temperature Tj (°C)

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BSM600C12P3G201

Datasheet

òElectrical characteristic curves (Typical)

Fig.5 Forward characteristic of Diode

Fig.6 Forward characteristic of Diode

(TYP)

1000

1200

1000

800

600

400

200

Tj=25℃

Tj=150℃

Tj=125℃

100

Tj=150℃

Tj=125℃

Tj=25℃

Source drain voltage VF (V)

Fig.7 Drain Current vs Gate Voltage (TYP)

1200

Fig.8 Drain Current vs Gate Voltage (TYP)

1.0E+03

1.0E+02

1.0E+01

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

Tj=150℃

1000

800

600

400

200

Tj=125℃

VDS=20V

Tj=125℃

Tj=25℃

VDS=20V

Tj=25℃

Gate Source Voltage VGS (V)

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BSM600C12P3G201

Datasheet

òElectrical characteristic curves (Typical)

Fig.9 Switching time vs drain current at

Fig.10 Switching time vs drain current at

125°C (TYP)

25°C (TYP)

1000

100

1000

td(off)

100

td(on)

RG(on)=0.2Ω

RG(off)=0.2Ω

VDS=600V

VGS(on)=18V

VGS(off)=0V

VDS=600V

VGS(on)=18V

VGS(off)=0V

RG(on)=0.2Ω

RG(off)=0.2Ω

INDUCTIVE LOAD

200 400 600 800 1000 1200

Drain current ID (A)

200 400 600 800 1000 1200

Drain current ID (A)

Fig.11 Switching time vs drain current at

Fig.12 Switching loss vs drain current at

150°C (TYP)

1000

25°C (TYP)

VDS=600V

VGS(on)=18V

VGS(off)=0V

td(off)

Eoff

RG(on)=0.2Ω

RG(off)=0.2Ω

INDUCTIVE LOAD

100

td(on)

Eon

VDS=600V

RG(on)=0.2Ω

RG(off)=0.2Ω

VGS(on)=18V

VGS(off)=0V

INDUCTIVE LOAD

Err

200 400 600 800 1000 1200

Drain current ID (A)

200 400 600 800 1000 1200

Drain current ID (A)

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30.Mar.2018 - Rev.001

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BSM600C12P3G201

Datasheet

òElectrical characteristic curves (Typical)

Fig.13 Switching loss vs drain current at

Fig.14 Switching loss vs drain current at

150°C (TYP)

125°C (TYP)

VDS=600V

VGS(on)=18V

VGS(off)=0V

VDS=600V

VGS(on)=18V

VGS(off)=0V

Eoff

RG(on)=0.2Ω

RG(off)=0.2Ω

RG(on)=0.2Ω

RG(off)=0.2Ω

Eoff

INDUCTIVE LOAD

Eon

Err

Eon

Err

200 400 600 800 1000 1200

Drain current ID (A)

200 400 600 800 1000 1200

Drain current ID (A)

Fig.15 Recovery characteristic vs drain

current at 25°C (TYP)

Fig.16 Recovery characteristic vs drain

current at 125°C (TYP)

100

1000

100

1000

100

trr

Irr

100

V_DS=600V

V_GS(on)=18V

V_GS(off)=0V

R_G=0.2Ω

V_DS=600V

V_GS(on)=18V

V_GS(off)=0V

R_G=0.2Ω

Irr

INDUCTIVE LOAD

200 400 600 800 1000 1200

Drain current ID (A)

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30.Mar.2018 - Rev.001

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BSM600C12P3G201

Datasheet

òElectrical characteristic curves (Typical)

Fig.17 Recovery characteristic vs drain

current at 150°C (TYP)

Fig.18 Switching time vs gate resistance

at 25°C (TYP)

10000

1000

100

1000

INDUCTIVE LOAD

V_DS=600V

I_D=600A

V_GS(on)=18V

V_GS(off)=0V

td(off)

trr

100

td(on)

V_DS=600V

V_GS(on)=18V

V_GS(off)=0V

R_G=0.2Ω

Irr

INDUCTIVE LOAD

0.1

100

200 400 600 800 1000 1200

Drain current ID (A)

Gate resistance RG (Ω)

Fig.19 Switching time vs gate resistance

at 125°C (TYP)

Fig.20 Switching time vs gate resistance

at 150°C (TYP)

10000

INDUCTIVE LOAD

V_DS=600V

I_D=600A

V_GS(on)=18V

V_GS(off)=0V

INDUCTIVE LOAD

V_DS=600V

I_D=600A

V_GS(on)=18V

V_GS(off)=0V

td(off)

1000

100

1000

100

td(on)

0.1

100

0.1

100

Gate resistance RG (Ω)

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30.Mar.2018 - Rev.001

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BSM600C12P3G201

Datasheet

òElectrical characteristic curves (Typical)

Fig.21 Switching loss vs gate resistance

at 25°C (TYP)

120

Fig.22 Switching loss vs gate resistance

at 125°C (TYP)

120

100

Eoff

Eon

Eoff

V_DS=600V

I_D=600A

V_GS(on)=18V

V_GS(off)=0V

INDUCTIVE LOAD

V_DS=600V

I_D=600A

V_GS(on)=18V

100

Eon

V_GS(off)=0V

INDUCTIVE LOAD

Err

0.1

100

0.1

100

Gate resistance RG (Ω)

Fig.23 Switching loss vs gate resistance

at 150°C (TYP)

120

Eoff

Eon

V_DS=600V

I_D=600A

V_GS(on)=18V

V_GS(off)=0V

INDUCTIVE LOAD

100

Err

0.1

100

Gate resistance RG (Ω)

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30.Mar.2018 - Rev.001

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BSM600C12P3G201

Datasheet

òElectrical characteristic curves (Typical)

Fig.24 Capacitance vs Drain source

Fig.25 Gate charge characteristic (TYP)

voltage (TYP)

1.E-07

Ciss

1.E-08

Coss

Tj=25℃

VGS=0V

200kHz

ID=600A

V_DS=600V

Tj=25℃

1.E-09

Crss

1.E-10

0.01

0.1

100

1000

500

1000

1500

2000

Drain source voltage VDS (V)

Gate charge QG (nC)

Fig.26 Transient thermal impedance (TYP)

0.1

Single Pulse

Tc=25℃

Per unit base

UMOS part : 61℃/kW

SBD part :61℃/kW

0.01

0.0001 0.001 0.01

0.1

Time (s)

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30.Mar.2018 - Rev.001

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Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions.

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products specified in this document are not designed to be radiation tolerant.

7) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, and power transmission systems.

8) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

10) ROHM has used reasonable care to ensure the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting

non-compliance with any applicable laws or regulations.

12) When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

regulations, including without limitation the US Export Administration Regulations and the Foreign

Exchange and Foreign Trade Act.

13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of

ROHM.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

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R1107

BSM600C12P3G201 [ROHM]

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