DTA014TM [ROHM]
100mA/-50V Digital transistors(with built-in resistors); 百毫安/ -50V数字晶体管(具有内置电阻)型号: | DTA014TM |
厂家: | ROHM |
描述: | 100mA/-50V Digital transistors(with built-in resistors) |
文件: | 总3页 (文件大小:296K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
-100mA/-50V Digital transistors(with built-in resistors)
DTA014TM / DTA014TEB / DTA014TUB
Features
Dimensions (Unit : mm)
1) Built-in input resistor enables the direct control of base
terminal by input voltage without external resistor.
(See equivalent circuit)
VMT3
2) The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
Abbreviated symbol : 07
EMT3F
3) Only the on/off conditions need to be set for operation,
making the device design easy.
(3)
(1)
(2)
Structure
Abbreviated symbol : 07
2.0
PNP epitaxial planar silicon transistor
(Resistor built-in type)
UMT3F
0.9
0.32
(3)
Applications
(1)
(2)
Inverter, Interface, Driver
0.13
0.65 0.65
1.3
Abbreviated symbol : 07
Packaging specifications
Equivalent circuit
Package
VMT3
Taping
T2L
EMT3F
Taping
TL
UMT3F
Taping
TL
C
E
R1
Packaging Type
Code
B
Type
B : Base
Basic ordering
unit (pieces)
8000
3000
3000
C : Collector
E : Emitter
DTA014TM
DTA014TEB
DTA014TUB
-
○
-
-
-
○
-
R1=10kΩ
-
○
Absolute maximum (Ta=25C)
Limits(DTA014T□)
Parameter
Symbol
Unit
M
EB
-50
-50
-5
UB
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
V
mA
mA
mW
C
Collector current
-100
PD
Power dissipation *
150
200
Junction temperature
Tj
150
Range of storage temperature
* Each terminal mounted on a reference land
Tstg
-55 to +150
C
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©2011 ROHM Co., Ltd. All rights reserved.
2011.08 - Rev.A
1/2
Data Sheet
DTA014TM / DTA014TEB / DTA014TUB
ꢀ
Electrical characteristics (Ta=25C)
Parameter
Min.
-50
-50
-5
Typ.
Test Conditions
IC=-50uA
Symbol
BVCBO
Max.
-
Unit
V
Collector-Base breakdown voltage
-
IC=-1mA
Collector-Emitter breakdown voltage BVCEO
-
-
V
IE=-50uA
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
BVEBO
ICBO
-
-
V
VCB=-50V
-
-
-500
-500
-0.15
600
nA
nA
V
VEB=-4V
IEBO
-
-
-0.07
-
IC=-5mA / IB=-0.5mA
Collector-Emitter saturation voltage
DC current gain
VCE(sat)
hFE
-
VCE=-10V / IC=-5mA
100
-
VCE=-10V / IE=5mA
f=100MHz
Transition frequency *
fT
-
250
10
-
MHz
Input resistance
7
R1
13
kΩ
* Characteristics of built-in transistor
Electrical characteristics curves
1000
-1
VCE=-10V
IC/IB=10
100
-0.1
-0.01
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
10
1
-0.001
-0.1
-1
-10
-100
-0.1
-1
-10
-100
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRNET : IC (mA)
Fig.1 DC Current Gain vs. Collector Current
Fig.2 Collector Saturation Voltage vs. Collector Current
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© 2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.08 - Rev.A
Notice
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120
A
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