DTA114EM_11 [ROHM]
100mA / 50V Digital transistors(with built-in resistors); 百毫安/ 50V数字晶体管(带内置式电阻器)型号: | DTA114EM_11 |
厂家: | ROHM |
描述: | 100mA / 50V Digital transistors(with built-in resistors) |
文件: | 总4页 (文件大小:152K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
100mA / 50V Digital transistors
(with built-in resistors)
DTA114EM / DTA114EE / DTA114EUA / DTA114EKA
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors
(see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the
advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
Structure
PNP epitaxial planar silicon transistor (Resistor built-in type)
Dimensions (Unit : mm)
0.7
1.6
0.3
DTA114EM
DTA114EE
1.2
0.32
0.55
(3)
( )
3
(
)( )
2
1
0.22
(
)
( )
1
2
0.13
(1) GND
(2) IN
(1) IN
(2) GND
(3) OUT
0.4 0.4
0.2
0.5
0.2
0.15
0.8
0.5
0.5
(3) OUT
Each lead has same dimensions
1.0
Each lead has same dimensions
ROHM : VMT3
DTA114EUA
ROHM : EMT3
DTA114EKA
Abbreviated symbol : 14
Abbreviated symbol : 14
2.9
1.1
0.8
2.0
0.9
0.7
0.4
0.2
0.3
( )
3
( )
3
(
)
( )
1
2
( )
( )
1
2
(1) GND
(2) IN
(3) OUT
(1) GND
(2) IN
0.650.65
1.3
0.95 0.95
1.9
0.15
0.15
(3) OUT
ROHM : UMT3
EIAJ : SC-70
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
Each lead has same dimensions
Abbreviated symbol : 14
Abbreviated symbol : 14
www.rohm.com
2011.12 - Rev.D
1/3
c
○ 2011 ROHM Co., Ltd. All rights reserved.
DTA114EM / DTA114EE / DTA114EUA / DTA114EKA
Data Sheet
Packaging specifications
Equivalent circuit
Package
VMT3
Taping
T2L
EMT3
Taping
TL
UMT3
Taping
T106
SMT3
Taping
T146
Packaging type
Code
OUT
R1
IN
R2
Basic ordering
unit (pieces)
8000
3000
3000
3000
Type
GND(+)
−
−
−
−
−
−
DTA114EM
DTA114EE
DTA114EUA
DTA114EKA
−
−
−
OUT
IN
−
−
GND(+)
−
R1
=R =10kΩ
2
Absolute maximum ratings (Ta=25C)
Limits
Parameter
Symbol
Unit
DTA114EM
DTA114EE
DTA114EUA
DTA114EKA
Supply voltage
Input voltage
V
CC
−50
V
V
V
IN
−40 to +10
−50
I
O
Output current
mA
I
C(Max.)
−100
Power dissipation
Pd
150
200
mW
°C
Junction temperature
Storage temperature
Tj
150
Tstg
−55 to +150
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
CC=−5V, I =−100μA
=−0.3V, I =−10mA
/I =−10mA/−0.5mA
=−5V
CC=−50V, V
V
I(off)
−
−3
−
−
−
−0.5
V
O
Input voltage
V
V
VI(on)
−
VO
O
Output voltage
Input current
VO(on)
−
−0.3
I
O I
I
I
−
−
−0.88 mA
V
V
V
I
Output current
DC current gain
Input resistance
Resistance ratio
I
O(off)
−
−
−0.5
−
μA
−
I
=0V
G
I
30
7
−
O
=−5V, I
O
=−5mA
R1
10
1
13
1.2
−
kΩ
−
−
−
R
2/R1
0.8
−
Transition frequency
f
T
∗
250
MHz
V
CE=−10V, I =5mA, f=100MHz
E
∗ Characteristics of built-in transistor
www.rohm.com
2011.12 - Rev.D
2/3
c
○ 2011 ROHM Co., Ltd. All rights reserved.
DTA114EM / DTA114EE / DTA114EUA / DTA114EKA
Data Sheet
Electrical characteristic curves
−10m
−5m
−100
VO
=−0.3V
VCC=−5V
−50
Ta=100°C
25°C
−40°C
−2m
−20
−10
−5
−1m
−500μ
Ta=−40°C
25°C
100°C
−200μ
−100μ
−50μ
−2
−1
−20μ
−10μ
−5μ
−500m
−200m
−100m
−2μ
−1μ
0
−0.5 −1.0 −1.5 −2.0 −2.5 −3.0
−100μ −200μ −500μ −1m −2m
−5m −10m −20m −50m −100m
OUTPUT CURRENT : I (A)
O
INPUT VOLTAGE : VI(off) (V)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
VO=−5V
−1
500
lO/lI=20
Ta=100°C
25°C
−40°C
−500m
200
100
50
Ta=100°C
25°C
−40°C
−200m
−100m
−50m
20
10
−20m
−10m
−5m
5
2
1
−2m
−1m
−100μ −200μ −500μ −1m −2m
−5m −10m −20m −50m−100m
−100μ −200μ −500μ −1m −2m
−5m −10m −20m −50m −100m
OUTPUT CURRENT : I (A)
O
OUTPUT CURRENT : I (A)
O
Fig.3 DC current gain vs. output
current
Fig.4 Output voltage vs. output current
www.rohm.com
2011.12 - Rev.D
3/3
c
○ 2011 ROHM Co., Ltd. All rights reserved.
Notice
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illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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A
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