EMG6T2R [ROHM]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, EMT5, 5 PIN;![EMG6T2R](http://pdffile.icpdf.com/pdf2/p00294/img/icpdf/EMG6T2R_1781874_icpdf.jpg)
型号: | EMG6T2R |
厂家: | ![]() |
描述: | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, EMT5, 5 PIN 开关 光电二极管 晶体管 |
文件: | 总7页 (文件大小:397K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
EMG6 / UMG6N / FMG6A
Datasheet
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
lOutline
EMT5
UMT5
Parameter
VCEO
Tr1 and Tr2
50V
(3)
(1)
4)
(1)
(4)
IC(MAX.)
R1
100mA
47kW
(3)
(5)
EMG6
(SC-107BB)
UMG6N
SOT-353 (SC-88A)
SMT5
(1)
lFeatures
(2)
(5)
1) Built-In Biasing Resistors.
(3)
2) Two DTC144T chips in one package.
3) Emitter-common type.
FMG6A
(SC-74A)
4) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
5) The bias resistors consist of thin-film resistors
lInner circuit
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
6) Only the on/off conditions need to be set for
operation, making the circuit design easy.
7) Lead Free/RoHS Compliant.
EMG6 / UMG6N
FMG6A
Base
(3)
Emitter
(2)
Base
(1)
Base
(3)
Emitter
(4)
Base
(5)
(4)
(5)
(2)
(1)
Collector
Collector
Collector
Collector
lApplication
Inverter circuit, Interface circuit, Driver circuit
lPackaging specifications
Package
size
(mm)
Basic
ordering
unit (pcs)
Taping
code
Reel size Tape width
Part No.
Package
Marking
(mm)
(mm)
EMG6
EMT5
UMT5
SMT5
1616
2021
2928
T2R
TR
180
180
180
8
8
8
8,000
3,000
3,000
G6
G6
G6
UMG6N
FMG6A
T148
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.06 - Rev.B
1/6
Data Sheet
EMG6 / UMG6N / FMG6A
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
VCBO
Values
50
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCEO
50
V
VEBO
5
V
*1
100
mA
mW
IC(MAX.)
150 (Total)*3
EMG6 / UMG6N
FMG6A
Collector Power dissipation
*2
PD
300 (Total)*4
150
mW
°C
Tj
Junction temperature
Tstg
°C
Range of storage temperature
-55 to +150
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Conditions
Min.
50
50
5
Typ.
Max.
Unit
V
BVCBO IC= 50mA
IC= 1mA
BVEBO IE= 50mA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
-
-
-
BVCEO
-
V
-
-
-
V
VCB = 50V
ICBO
IEBO
VCE(sat)
hFE
-
0.5
0.5
0.3
600
61.1
mA
mA
V
VEB = 4V
Emitter cut-off current
-
-
IC / IB= 5mA / 0.5mA
VCE= 5V , IC= 1mA ,
-
Collector-emitter saturation voltage
DC current gain
-
-
100
32.9
250
47
-
R1
Input resistance
kW
VCE = 10V, IE = -5mA,
f = 100MHz
*1
Transition frequency
-
250
-
MHz
fT
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.06 - Rev.B
2/6
Data Sheet
EMG6 / UMG6N / FMG6A
lElectrical characteristic curves(Ta = 25°C)
Fig.2 Grounded emitter output
characteristics
50
Fig.1 Grounded emitter propagation
characteristics
IB= 200μA
10
180μA
160μA
VCE=5V
40
30
20
10
0
1
140μA
120μA
100μA
80μA
60μA
0.1
Ta=100ºC
25ºC
-40ºC
0.01
40μA
20μA
0A
Ta=25ºC
0.001
0
0.5
1
1.5
2
0
5
10
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER
VOLTAGE : VCE (V)
Fig.4 Collector-emitter saturation voltage
vs. Collector Current
Fig.3 DC Current gain
vs. Collector Current
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.06 - Rev.B
3/6
Data Sheet
EMG6 / UMG6N / FMG6A
lDimensions (Unit : mm)
D
A
EMT5
b
c
x
S A
e
y
S
S
b2
e
Patterm of terminal position areas
MILIMETERS
MIN
INCHES
DIM
MAX
0.10
0.55
0.27
0.18
1.70
1.30
MIN
0
MAX
0.004
0.022
0.011
0.007
0.067
0.051
A1
A
b
c
D
E
0.00
0.45
0.17
0.08
1.50
1.10
0.018
0.007
0.003
0.059
0.043
0.50
0.02
e
HE
L
Lp
x
1.50
0.10
-
-
-
1.70
0.30
0.35
0.10
0.10
0.059
0.004
-
-
-
0.067
0.012
0.014
0.004
0.004
y
MILIMETERS
MAX
1.25
INCHES
0.049
DIM
MIN
MIN
MAX
e1
b2
l1
-
-
0.37
0.45
-
-
0.015
0.018
Dimension in mm/inches
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.06 - Rev.B
4/6
Data Sheet
EMG6 / UMG6N / FMG6A
lDimensions (Unit : mm)
UMT5
D
A
c
e
Q
A3
b
x
S A
e
y
S
S
b2
Patterm of terminal position areas
MILIMETERS
MIN
0.80
0.00
INCHES
DIM
MAX
1.00
0.10
MIN
0.031
0
MAX
0.039
0.004
A
A1
A3
b
c
D
0.25
0.65
0.01
0.15
0.10
1.90
1.15
0.30
0.20
2.10
1.35
0.006
0.004
0.075
0.045
0.012
0.008
0.083
0.053
E
e
0.03
HE
L1
Lp
Q
x
2.00
0.20
0.25
0.10
-
2.20
0.50
0.55
0.30
0.10
0.10
0.079
0.008
0.01
0.004
-
0.087
0.02
0.022
0.012
0.004
0.004
y
-
-
MILIMETERS
MAX
1.55
INCHES
0.06
DIM
MIN
MIN
MAX
e1
b2
l1
-
-
0.40
0.65
-
-
0.016
0.026
Dimension in mm/inches
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.06 - Rev.B
5/6
Data Sheet
EMG6 / UMG6N / FMG6A
lDimensions (Unit : mm)
SMT5
D
A
e
c
Q
A3
b
x
S A
e
y
S
S
b2
Patterm of terminal position areas
MILIMETERS
MIN
1.00
0.00
INCHES
DIM
MAX
1.30
0.10
MIN
-
0
MAX
0.051
0.004
A
A1
A3
b
c
D
0.25
0.95
0.01
0.25
0.09
2.80
1.50
0.40
0.25
3.00
1.80
0.01
0.004
0.11
0.016
0.01
0.118
0.071
E
e
0.059
0.04
HE
L1
Lp
Q
x
2.60
0.30
0.40
0.20
-
3.00
0.60
0.70
0.30
0.20
0.10
0.102
0.012
0.016
0.008
-
0.118
0.024
0.028
0.012
0.008
0.004
y
-
-
MILIMETERS
MAX
INCHES
0.08
DIM
MIN
MIN
MAX
2.10
e1
b2
l1
0.60
0.90
-
-
0.024
0.035
-
Dimension in mm/inches
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.06 - Rev.B
6/6
Notice
N o t e s
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
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The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
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Please be sure to implement in your equipment using the Products safety measures to guard
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The Products are not designed or manufactured to be used with any equipment, device or
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© 2012 ROHM Co., Ltd. All rights reserved.
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EMG9T2R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, EMT5, 5 PIN
ROHM
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