EMH2 [ROHM]
General purpose (dual digital transistors); 通用（双数字晶体管）
| 型号： | EMH2 |
| 厂家： | 
ROHM |
| 描述： | General purpose (dual digital transistors) |
| 文件： | 总3页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMH2 / UMH2N / IMH2A
Transistors
General purpose (dual digital transistors)
EMH2 / UMH2N / IMH2A
!External dimensions (Units : mm)
!Features
1) Two DTC144Es chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
EMH2
( )
3
( )
2
( )
1
( )
4
( )
5
( )
6
1.2
1.6
4) Mounting cost and area can be cut in half.
All terminals have same dimensions
Abbreviated symbol : H2
ROHM : EMT6
UMH2N
!Structure
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
1.25
2.1
The following characteristics apply to both DTr1 and DTr2.
0.1Min.
All terminals have same dimensions
!Equivalent circuit
Abbreviated symbol : H2
ROHM : UMT6
EIAJ : SC-88
EMH2 / UMH2N
IMH2A
(4) (5) (6)
(3) (2) (1)
R1
R2
R1
R2
IMH2A
DTr1
DTr1
DTr
2
DTr2
R2
R2
R1
R1
(4) (5) (6)
(3) (2) (1)
R
1
=47kΩ
=47kΩ
R
1
=47kΩ
=47kΩ
R2
R2
1.6
2.8
0.3to0.6
All terminals have same dimensions
!Packaging specifications
Package
Taping
TN
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : H2
Code
T2R
T110
3000
Basic ordering
unit (pieces)
8000
3000
Type
EMH2
UMH2N
IMH2A
−
−
−
−
−
−
EMH2 / UMH2N / IMH2A
Transistors
!Absolute maximum ratings (Ta = 25°C)
Limits
50
Parameter
Symbol
Unit
V
Supply voltage
V
CC
40
−10
V
IN
Input voltage
V
I
O
30
Output current
mA
mW
I
C(Max.)
100
1
2
∗
EMH2,UMH2N
IMH2A
150 (TOTAL)
Power
dissipation
Pd
300 (TOTAL)
150
∗
Tj
Junction temperature
Storage temperature
°C
°C
Tstg
−55~+150
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
∗
∗
!Electrical characteristics (Ta = 25°C)
Parameter
Input voltage
Symbol Min.
Typ.
−
Max.
0.5
−
Unit
V
Conditions
V
I(off)
I(on)
−
3
V
CC=5V, I
=0.3V, I
/I =10mA/0.5mA
=5V
CC=50V, V
O
=100µA
V
−
V
O
O
=2mA
Output voltage
Input current
V
O(on)
−
0.1
−
0.3
0.18
0.5
−
V
mA
µA
−
I
O I
I
I
−
V
V
V
I
Output current
DC current gain
Transition frequency
Input resistance
I
O(off)
−
−
I
=0V
=5mA
=−5mA, f=100MHz
G
I
68
−
−
O
=5V, I
O
f
T
250
47
1
−
MH
kΩ
−
Z
VCE=10mA, I
E
∗
R
1
32.9
0.8
61.1
1.2
−
−
R2/R1
Resistance ratio
Transition frequency of the device
∗
!Electrical characteristic curves
100
10m
1k
VCC=5V
V
O
=0.3V
VO=5V
5m
500
50
Ta=100°C
25°C
−40°C
2m
1m
Ta=100°C
25°C
−40°C
20
10
200
100
50
500µ
Ta=−40°C
25°C
100°C
200µ
100µ
50µ
5
20
2
1
20µ
10
5
10µ
5µ
500m
2
1
200m
100m
2µ
1µ
0
0.5
1.0
1.5
2.0
2.5
3.0
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m100m
100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m
INPUT VOLTAGE : VI (off) (V)
OUTPUT CURRENT : I
O
(A)
OUTPUT CURRENT : I
O
(A)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.3 DC current gain vs. output
current
EMH2 / UMH2N / IMH2A
Transistors
1
lO/lI=20
500m
Ta=100°C
200m
25°C
−40°C
100m
50m
20m
10m
5m
2m
1m
100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m
OUTPUT CURRENT : I
O
(A)
Fig.4 Output voltage vs. output
current
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