EMT18 [ROHM]
General purpose transistors (dual transistors); 通用晶体管(双晶体管)型号: | EMT18 |
厂家: | ROHM |
描述: | General purpose transistors (dual transistors) |
文件: | 总4页 (文件大小:79K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
EMT18 / UMT18N / IMT18
Transistors
General purpose transistors
(dual transistors)
EMT18 / UMT18N / IMT18
zExternal dimensions (Unit : mm)
zFeatures
1) Two 2SA2018 chips in a EMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
EMT18
( )
3
( )
2
( )
1
( )
4
( )
5
( )
6
1.2
1.6
3) Transistor elements are independent, eliminating
interference.
Each lead has same dimensions
Abbreviated symbol : T18
ROHM : EMT6
UMT18N
zStructure
Epitaxial planar type
NPN silicon transistor
1.25
2.1
0.1Min.
Each lead has same dimensions
The following characteristics apply to both Tr1 and Tr2.
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : T18
IMT18
zEquivalent circuit
EMT18 / UMT18N
IMT18
(3) (2) (1)
(4) (5) (6)
1.6
2.8
Tr1
Tr1
Tr2
Tr2
0.3Min.
Each lead has same dimensions
Abbreviated symbol : T18
ROHM : SMT6
EIAJ : SC-74
(4) (5) (6)
(3) (2) (1)
JEDEC : SOT-457
zAbsolute maximum ratings (Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
Limits
−15
−12
−6
−500
1.0
Unit
V
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
V
mA
A
Collector current
∗1
ICP
EMT6
150 (TOTAL)∗2
Power dissipation
PC UMT6
SMT6
Tj
mW
300 (TOTAL)∗3
150
Junction temperature
Storage temperature
°C
°C
Tstg
−55 to +150
∗1 Single pulse P =1ms
W
∗2 120mW per element must not be exceeded.
∗3 200mW per element must not be exceeded.
Rev.A
1/3
EMT18/UMT18N/IMT18
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO −15
−
−
−
−
−
−
−
−
V
V
V
IC= −10µA
IC= −1mA
IE= −10µA
Collector-emitter breakdown voltage BVCEO −12
Emitter-base breakdown voltage
BVEBO
−6
−
Collector cutoff current
ICBO
−0.1 µA VCB= −15V
−0.1 µA VCB= −6V
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE (sat)
−
−100 −250 mV IC / IB= −200mA / −10mA
DC current transfer ratio
Transition frequency
Output capacitance
hFE
fT
270
−
260
680
−
VCE= −2V, IC= −10mA
−
−
−
−
MHz VCE= −2V, IE=10mA, f=100MHz
pF VCB= −10V, IE=0A, f=1MHz
Cob
6.5
zPackaging specifications and hFE
Package name
Taping
TR
Type
Code
T2R
T110
3000
−
Basic ordering unit (pieces)
8000
3000
−
EMT18
UMT18N
IMT18
−
−
−
−
zElectrical characteristic curves
1000
500
1000
1000
VCE=2V
IC / IB=20
VCE=2V
500
200
500
200
200
100
50
Ta=125°C
Ta=125°C
Ta=25°C
100
100
Ta=125°C
Ta=25°C
Ta= −40°C
Ta=25°C
Ta= −40°C
50
50
Ta= −40°C
20
10
5
20
10
5
20
10
5
2
1
2
1
2
1
0
0.5
1.0
1.5
1
2
5
10 20
50 100 200 500 1000
1
2
5
10 20
50 100 200 500 1000
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded Emitter Propagation
Characteristics
Fig.3 Collector-Emitter Saturation
Voltage vs.
Fig.2 DC Current Gain vs.
Collector Current
Collector Current (Ι)
Rev.A
2/3
EMT18/UMT18N/IMT18
Transistors
1000
500
1000
500
1000
Ta=25°C
IC / IB=20
VCE=2V
Ta=25°C
500
Ta= −40°C
Ta=25°C
Ta=125°C
200
100
200
100
50
200
100
50
50
IC / IB=50
IC / IB=20
20
10
5
20
10
5
20
IC / IB=10
10
5
2
1
2
1
2
1
1
2
5
10 20
50 100 200 500 1000
1
2
5
10 20
50 100 200 500 1000
1
2
5
10 20
50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
EMITTER CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-Emitter Saturation
Voltage vs.
Fig.5 Base-Emitter Saturation
Voltage vs.Collecter Current
Fig.6 Gain Bandwidth Product vs.
Emitter Current
Collector Current (ΙΙ)
1000
IE=0A
f=1MHz
Ta=25°C
500
200
100
50
Cib
20
10
5
Cob
2
1
0.1 0.2 0.5
1
2
5
10 20
50 100
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector Output Capacitance vs.
Collector-Base Voltage
Emitter Input Capacitance vs.
Emitter-Base Voltage
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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