EMT18 [ROHM]

General purpose transistors (dual transistors); 通用晶体管(双晶体管)
EMT18
型号: EMT18
厂家: ROHM    ROHM
描述:

General purpose transistors (dual transistors)
通用晶体管(双晶体管)

晶体 晶体管
文件: 总4页 (文件大小:79K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
EMT18 / UMT18N / IMT18  
Transistors  
General purpose transistors  
(dual transistors)  
EMT18 / UMT18N / IMT18  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Two 2SA2018 chips in a EMT package.  
2) Mounting possible with EMT3 or UMT3 or SMT3  
automatic mounting machines.  
EMT18  
( )  
3
( )  
2
( )  
1
( )  
4
( )  
5
( )  
6
1.2  
1.6  
3) Transistor elements are independent, eliminating  
interference.  
Each lead has same dimensions  
Abbreviated symbol : T18  
ROHM : EMT6  
UMT18N  
zStructure  
Epitaxial planar type  
NPN silicon transistor  
1.25  
2.1  
0.1Min.  
Each lead has same dimensions  
The following characteristics apply to both Tr1 and Tr2.  
ROHM : UMT6  
EIAJ : SC-88  
Abbreviated symbol : T18  
IMT18  
zEquivalent circuit  
EMT18 / UMT18N  
IMT18  
(3) (2) (1)  
(4) (5) (6)  
1.6  
2.8  
Tr1  
Tr1  
Tr2  
Tr2  
0.3Min.  
Each lead has same dimensions  
Abbreviated symbol : T18  
ROHM : SMT6  
EIAJ : SC-74  
(4) (5) (6)  
(3) (2) (1)  
JEDEC : SOT-457  
zAbsolute maximum ratings (Ta=25°C)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Limits  
15  
12  
6  
500  
1.0  
Unit  
V
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
V
V
mA  
A
Collector current  
1  
ICP  
EMT6  
150 (TOTAL)2  
Power dissipation  
PC UMT6  
SMT6  
Tj  
mW  
300 (TOTAL)3  
150  
Junction temperature  
Storage temperature  
°C  
°C  
Tstg  
55 to +150  
1 Single pulse P =1ms  
W
2 120mW per element must not be exceeded.  
3 200mW per element must not be exceeded.  
Rev.A  
1/3  
EMT18/UMT18N/IMT18  
Transistors  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min. Typ. Max. Unit  
Conditions  
Collector-base breakdown voltage  
BVCBO 15  
V
V
V
IC= −10µA  
IC= −1mA  
IE= −10µA  
Collector-emitter breakdown voltage BVCEO 12  
Emitter-base breakdown voltage  
BVEBO  
6  
Collector cutoff current  
ICBO  
0.1 µA VCB= −15V  
0.1 µA VCB= −6V  
Emitter cutoff current  
IEBO  
Collector-emitter saturation voltage VCE (sat)  
100 250 mV IC / IB= −200mA / 10mA  
DC current transfer ratio  
Transition frequency  
Output capacitance  
hFE  
fT  
270  
260  
680  
VCE= −2V, IC= −10mA  
MHz VCE= −2V, IE=10mA, f=100MHz  
pF VCB= −10V, IE=0A, f=1MHz  
Cob  
6.5  
zPackaging specifications and hFE  
Package name  
Taping  
TR  
Type  
Code  
T2R  
T110  
3000  
Basic ordering unit (pieces)  
8000  
3000  
EMT18  
UMT18N  
IMT18  
zElectrical characteristic curves  
1000  
500  
1000  
1000  
VCE=2V  
IC / IB=20  
VCE=2V  
500  
200  
500  
200  
200  
100  
50  
Ta=125°C  
Ta=125°C  
Ta=25°C  
100  
100  
Ta=125°C  
Ta=25°C  
Ta= −40°C  
Ta=25°C  
Ta= −40°C  
50  
50  
Ta= −40°C  
20  
10  
5
20  
10  
5
20  
10  
5
2
1
2
1
2
1
0
0.5  
1.0  
1.5  
1
2
5
10 20  
50 100 200 500 1000  
1
2
5
10 20  
50 100 200 500 1000  
BASE TO EMITTER VOLTAGE : VBE (V)  
COLLECTOR CURRENT : IC (mA)  
COLLECTOR CURRENT : IC (mA)  
Fig.1 Grounded Emitter Propagation  
Characteristics  
Fig.3 Collector-Emitter Saturation  
Voltage vs.  
Fig.2 DC Current Gain vs.  
Collector Current  
Collector Current (Ι)  
Rev.A  
2/3  
EMT18/UMT18N/IMT18  
Transistors  
1000  
500  
1000  
500  
1000  
Ta=25°C  
IC / IB=20  
VCE=2V  
Ta=25°C  
500  
Ta= −40°C  
Ta=25°C  
Ta=125°C  
200  
100  
200  
100  
50  
200  
100  
50  
50  
IC / IB=50  
IC / IB=20  
20  
10  
5
20  
10  
5
20  
IC / IB=10  
10  
5
2
1
2
1
2
1
1
2
5
10 20  
50 100 200 500 1000  
1
2
5
10 20  
50 100 200 500 1000  
1
2
5
10 20  
50 100 200 500 1000  
COLLECTOR CURRENT : IC (mA)  
EMITTER CURRENT : IC (mA)  
COLLECTOR CURRENT : IC (mA)  
Fig.4 Collector-Emitter Saturation  
Voltage vs.  
Fig.5 Base-Emitter Saturation  
Voltage vs.Collecter Current  
Fig.6 Gain Bandwidth Product vs.  
Emitter Current  
Collector Current (ΙΙ)  
1000  
IE=0A  
f=1MHz  
Ta=25°C  
500  
200  
100  
50  
Cib  
20  
10  
5
Cob  
2
1
0.1 0.2 0.5  
1
2
5
10 20  
50 100  
EMITTER TO BASE VOLTAGE : VEB (V)  
Fig.7 Collector Output Capacitance vs.  
Collector-Base Voltage  
Emitter Input Capacitance vs.  
Emitter-Base Voltage  
Rev.A  
3/3  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

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