ES6U42 [ROHM]

2.5V Drive Pch+SBD MOSFET; 2.5V驱动P沟道+ SBD MOSFET


型号：	ES6U42
厂家：	ROHM
描述：	2.5V Drive Pch+SBD MOSFET 2.5V驱动P沟道+ SBD MOSFET 驱动
文件：	总6页 (文件大小：225K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2.5V Drive Pch+SBD MOSFET

ES6U42

zStructure

zDimensions (Unit : mm)

Silicon P-channel MOSFET /

Schottky barrier diode

WEMT6

(6) (5) (4)

zFeatures

1) Pch MOSFET and schottky barrier diode

are put in WEMT6 package.

(1) (2) (3)

2) High-speed switching, Low On-resistance.

3) Low voltage drive (2.5V drive).

4) Built-in Low V^Fschottky barrier diode.

Abbreviated symbol : U42

zApplications

Switching

zPackage specifications

zInner circuit

Package

Taping

T2R

(6)

(4)

(5)

Type

Code

Basic ordering unit (pieces)

8000

ES6U42

∗2

(1)Gate

(2)Source

(3)Anode

(4)Cathode

(5)Drain

∗1

(1)

(2)

(3)

∗1 ESD protection diode

∗2 Body diode

(6)Drain

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Symbol

Limits

−20

Unit

V_DSS

V_GSS

I_D

Gate-source voltage

Continuous

Pulsed

1.0

Drain current

∗1

I_DP

4.0

Source current

(Body diode)

Continuous

Pulsed

I_S

−0.4

−4.0

150

0.7

I_SP

Channel temperature

Power dissipation

Tch

P_D

°C

∗2

W / ELEMENT

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

<Di>

Parameter

Symbol

V_RM

V_R

Limits

Unit

Repetitive peak reverse voltage

Reverse voltage

0.5

2.0

I_F

Forward current

∗1

I_FSM

Forward current surge peak

Junction temperature

Power dissipation

°C

P_D

150

0.5

∗2

W / ELEMENT

∗1 60Hz 1cycle

∗2 Mounted on a ceramic board

Parameter

Symbol

Limits

0.8

Unit

W / TOTAL

°C

∗

Power dissipation

Range of storage temperature

P_D

Tstg

−55 to +150

∗

Mounted on a ceramic board

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2009.01 - Rev.A

1/5

ES6U42

Data Sheet

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max.

Conditions

Unit

Gate-source leakage

I_GSS

−

−20

−

−0.7

−

0.7

−

µA V_GS

12V, V_DS=0V

Drain-source breakdown voltage V_{(BR) DSS}

µA

I_D= −1mA, V_GS=0V

_DS= −20V, V_GS=0V

V_DS= −10V, I_D= −1mA

Zero gate voltage drain current

Gate threshold voltage

I_DSS

−1

−2.0

390

430

800

−

V_{GS (th)}

−

280

310

570

−

150

mΩ I_D= −1A, V_GS= −4.5V

mΩ I_D= −1A, V_GS= −4V

mΩ I_D= −0.5A, V_GS= −2.5V

Static drain-source on-state

resistance

∗

R_{DS (on)}

∗

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Y_fs

C_iss

_DS= −10V, I_D= −0.5A

_DS= −10V

−

C_oss

C_rss

t_{d (on)}

V_GS= 0V

f= 1MHz

∗

DD −15

GS= −4.5V

= −0.5A

Turn-off delay time

Fall time

t_{d (off)}

2.1

0.5

30Ω

∗

t_f

= 10Ω

Total gate charge

Gate-source charge

Q_g

nC V_DD−15V, V_GS= −4.5V

nC I_D= −1A, R_L15Ω

∗

Q_gs

Q_gd

−

R_G= 10Ω

Gate-drain charge

∗Pulsed

Parameter

Symbol Min. Typ. Max.

Conditions

Unit

∗

Forward voltage

−

−1.2

I_S= −1.0A, V_GS=0V

∗Pulsed

<Di>

Parameter

Symbol Min. Typ. Max.

Conditions

I_F= 0.1A

Unit

−

0.36

0.52

100

Forward voltage

Reverse current

I_F= 0.5A

V_R= 20V

µA

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2009.01 - Rev.A

2/5

ES6U42

Data Sheet

zElectrical characteristics curves

2.0

1.5

1.0

0.5

0.0

2.0

Ta=25°C

Pulsed

Ta=25°C

Pulsed

V_DS= -10V

Pulsed

V_GS= -10V

V_GS= -4.0V

V_GS= -3.0V

V_GS= -10V

V_GS= -4.5V

V_GS= -4.0V

V_GS= -3.0V

1.5

1.0

0.5

0.0

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= - 25°C

V_GS= -2.4V

0.1

V_GS= -2.5V

V_GS= -2.2V

V_GS= -2.0V

V_GS= -2.2V

V_GS= -2.0V

0.01

0.001

0.0

2.0

DRAIN-SOURCE VOLTAGE : -V_DS[V]

Fig.2 Typical Output Characteristics( )

Ⅱ

4.0

6.0

8.0

10.0

0.0

0.2

0.4

0.6

0.8

1.0

1.5

GATE-SOURCE VOLTAGE : -V_GS[V]

Fig.3 Typical Transfer Characteristics

2.0

2.5

DRAIN-SOURCE VOLTAGE : -V_DS[V]

Fig.1 Typical Output Characteristics(

)

Ⅰ

10000

1000

100

10000

1000

100

10000

1000

100

Ta=25°C

Pulsed

V_GS= -4.5V

V_GS= -4V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

Pulsed

Ta=75°C

Ta=25°C

Ta= -25°C

V_GS= -2.5V

V_GS= -4.0V

V_GS= -4.5V

0.01

0.1

0.01

0.1

0.01

0.1

DRAIN-CURRENT : -I_D[A]

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current(

Fig.5 Static Drain-Source On-State

Resistance vs. Drain Current(

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current( )

Ⅲ

)

Ⅰ

Ⅱ

10000

1000

100

V_GS= -2.5V

V_DS= -10V

Pulsed

V_GS=0V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

Pulsed

Ta=125°C

0.1

Ta=75°C

Ta=25°C

Ta=-25°C

Ta= -25°C

Ta=25°C

Ta=75°C

Ta=125°C

0.01

0.1

0.01

0.1

0.2

0.4

0.6

0.8

1.0

1.2

DRAIN-CURRENT : -I_D[A]

SOURCE-DRAIN VOLTAGE : -V_SD[V]

Fig.7 Static Drain-Source On-State

Resistance vs. Drain Current(

Fig.8 Forward Transfer Admittance

vs. Drain Current

Fig.9 Reverse Drain Current

vs. Sourse-Drain Voltage

)

Ⅳ

www.rohm.com

2009.01 - Rev.A

3/5

ES6U42

Data Sheet

1000

900

800

700

600

500

400

300

200

10000

1000

100

Ta=25°C

_DD= -15V

Ta=25°C

Pulsed

V_GS=-4.5V

R_G=10Ω

Pulsed

I_D= -1.0A

I_D= -0.5A

t_f

t_d(off)

Ta=25°C

_DD= -15V

I_D= -1.0A

R_G=10Ω

Pulsed

t_d(on)

0.1

t_r

100

0.01

0.5

1.5

2.5

GATE-SOURCE VOLTAGE : -V_GS[V]

DRAIN-CURRENT : -I_D[A]

TOTAL GATE CHARGE : Qg [nC]

Fig.12 Dynamic Input Characteristics

Fig.10 Static Drain-Source On-State

Fig.11 Switching Characteristics

Resistance vs. Gate Source Voltage

1000

100

Ciss

Crss

Coss

Ta=25°C

f=1MHz

_GS=0V

0.01

0.1

100

DRAIN-SOURCE VOLTAGE : -V_DS[V]

Fig.13 Typical Capacitance

vs. Drain-Source Voltage

<Di>

100000

pulsed

10000

1000

100

Ta = 75

℃

0.1

0.01

Ta = 25

Ta = 75

℃

Ta = 25

Ta= - 25

℃

Ta= - 25

℃

0.1

0.01

0.001

REVERSE VOLTAGE : V_R[V]

Fig.1 Reverse Current vs. Reverse Voltage

0.1 0.2 0.3 0.4 0.5 0.6

FORWARD VOLTAGE : V_F(V)

Fig.2 Forward Current vs. Forward Voltage

www.rohm.com

2009.01 - Rev.A

4/5

ES6U42

Data Sheet

zMeasurement circuit

Pulse Width

VGS

VDS

10%

50%

90%

D.U.T.

10%

90%

10%

90%

VDD

d(on)

td(off)

toff

Fig.1-1 Switching Time Measurement Circuit

Fig.1-2 Switching Waveforms

VDS

G(Const.)

D.U.T.

Qgd

Charge

FIg.2-2 Gate Charge Waveform

Fig.2-1 Gate Charge Measurement Circuit

zNotice

1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and

increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.

This built-in SBD has low V^Fcharacteristics and therefore, higher leak current. Please consider enough the surrounding

temperature, generating heat of MOSFET and the reverse current.

2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD

protection circuit.

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2009.01 - Rev.A

5/5

Appendix

Notes

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM

CO.,LTD.

The content specified herein is subject to change for improvement without notice.

The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you

wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM

upon request.

Examples of application circuits, circuit constants and any other information contained herein illustrate the

standard usage and operations of the Products. The peripheral conditions must be taken into account

when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specified in this document. However, should

you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no re-

sponsibility for such damage.

The technical information specified herein is intended only to show the typical functions of and examples

of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to

use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no re-

sponsibility whatsoever for any dispute arising from the use of such technical information.

The Products specified in this document are intended to be used with general-use electronic equipment

or devices (such as audio visual equipment, office-automation equipment, communication devices, elec-

tronic appliances and amusement devices).

The Products are not designed to be radiation tolerant.

While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or

malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard against the

possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as

derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your

use of any Product outside of the prescribed scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or system

which requires an extremely high level of reliability the failure or malfunction of which may result in a direct

threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment,

aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear

no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intend-

ed to be used for any such special purpose, please contact a ROHM sales representative before purchasing.

If you intend to export or ship overseas any Product or technology specified herein that may be controlled under

the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact your nearest sales office.

THE AMERICAS / EUROPE / ASIA / JAPAN

ROHM Customer Support System

www.rohm.com

TEL : +81-75-311-2121

FAX : +81-75-315-0172

21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan

Appendix-Rev4.0

ES6U42 [ROHM]

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