IMD6AT148 [ROHM]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SC-74, 6 PIN;
| 型号： | IMD6AT148 |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SC-74, 6 PIN 开关 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMD6 / UMD6N / IMD6A
Transistors
General purpose
(dual digital transistors)
EMD6 / UMD6N / IMD6A
!Features
!External dimensions (Units : mm)
1) Both the DTA143T chip and DTC143T chip in an EMT
or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
EMD6
( )
3
( )
2
( )
1
( )
4
( )
5
( )
6
1.2
1.6
3) Transistor elements are independent, eliminating
interference.
Each lead has same dimensions
4) Mounting cost and area can be cut in half.
ROHM : EMT6
EMD6N
Abbreviated symbol : D6
!Structure
A PNP and NPN digital transistor
(each with a single built in resistor)
1.25
2.1
The following characteristics apply to both the DTr1 and
DTr2, however, the “ −” sign on DTr2 values for the PNP
type have been omitted.
0.1Min.
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : D6
!Equivalent circuit
IMD6A
EMD6 / UMD6N
IMD6A
(4) (5) (6)
R
(3) (2) (1)
R
1
1
DTr1
DTr1
DTr2
DTr2
1.6
2.8
R1=4.7kΩ
R1=4.7kΩ
R
1
R
1
(3) (2) (1)
(4) (5) (6)
0.3to0.6
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
!Absolute maximum ratings (Ta = 25°C)
Abbreviated symbol : D6
Limits
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Unit
V
VCBO
VCEO
VEBO
50
50
V
5
V
I
C
100
mA
Collector
power
dissipation
1
∗
2
∗
EMD6, UMD6N
150 (TOTAL)
300 (TOTAL)
150
P
C
mW
IMD6A
Junction temperature
Storage temperature
Tj
˚C
˚C
Tstg
−55∼+150
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
∗
∗
EMD6 / UMD6N / IMD6A
Transistors
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
50
50
5
−
−
−
−
−
−
−
−
−
V
V
V
I
I
I
C
=
=
50µA
1mA
Collector-emitter breakdown voltage BVCEO
C
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
E
=
50µA
I
CBO
EBO
CE (sat)
FE
−
0.5 µA
0.5 µA
V
CB
EB
=
50V
4V
5mA/0.25mA
5V, I 1mA
10mA, I
Emitter cutoff current
I
−
V
=
Collector-emitter saturation voltage
DC current transfer ratio
V
−
0.3
V
−
I
C/I =
B
h
100 250 600
250
V
CE
=
C=
Transition frequency
Input resistance
−
−
MHz
f
T
V
CE
=
E
=
−5mA, f=100MHz
∗
R1
3.29 4.7 6.11 kΩ
−
Transition frequency of the transistor
∗
!Packaging specifications
Package
Taping
Code
T2R
TR
T148
3000
Basic ordering
unit (pieces)
8000
3000
Type
EMD6
UMD6N
IMD6A
!Electrical characteristic curves
DTr1 (NPN)
1k
1
VCE=5V
lC/lB=20
500
200
500m
200m
100m
50m
Ta=100˚C
25˚C
−40˚C
Ta=100˚C
25˚C
−40˚C
100
50
20
10
5
20m
10m
5m
2
1
2m
1m
100µ
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
200µ 500µ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain vs. collector
current
Fig.2 Collector-emitter saturation
voltage vs. collector current
DTr2 (PNP)
1k
−1
lC/lB=20
V
CE=−5V
−500m
500
Ta=100˚C
25˚C
−40˚C
−200m
−100m
−50m
200
100
Ta=100˚C
25˚C
50
−40˚C
−20m
20
10
−10m
−5m
5
−2m
−1m
2
1
−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m
−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-emitter saturation
voltage vs. collector current
Fig.3 DC current gain vs. collector
current
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