R5011ANJTLL [ROHM]
Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LPTL, 3 PIN;
| 型号： | R5011ANJTLL |
| 厂家： | 
ROHM |
| 描述： | Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LPTL, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10V Drive Nch MOSFET
R5011ANJ
zStructure
zDimensions (Unit : mm)
LPTS
Silicon N-channel MOSFET
10.1
4.5
1.3
zFeatures
1) Low on-resistance.
1.24
2) Fast switching speed.
0.4
2.7
2.54
0.78
5.08
3) Gate-source voltage (VGSS) guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
Each lead has same dimensions
LPTL
8.9
4.8
zApplications
Switching
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
Each lead has same dimensions
zPackaging specifications
zInner circuit
Taping
LPTS
LPTL
Package
TL
Type
Code
∗1
TLL
Basic ordering unit (pieces)
1000
(1)
(2)
(3)
(1) Gate
(2) Drain
(3) Source
∗1 Body Diode
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Limits
500
30
Symbol
Unit
V
VDSS
GSS
V
V
∗3
∗1
∗3
∗1
Continuous
Pulsed
11
I
D
A
Drain current
44
I
DP
A
Continuous
Pulsed
11
I
S
A
Source current
(Body Diode)
44
I
SP
AS
AS
A
∗2
∗2
Avalanche current
Avalanche energy
5.5
8.1
75
A
I
E
mJ
W
°C
°C
Total power dissipation (Tc=25°C)
P
D
Channel temperature
150
Tch
Range of storage temperature
−55 to +150
Tstg
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, VDD=50V, R =25Ω, Starting, Tch=25°C
G
∗3 Limited only by maximum temperature allowed
zThermal resistance
Parameter
Symbol
Limits
1.67
Unit
Channel to case
Rth(ch-c)
°C/W
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R5011ANJ
Data Sheet
zElectrical characteristics (Ta=25°C)
Parameter
Typ.
Symbol Min.
Max.
100
−
Unit
nA
V
Conditions
V
GS= 30V, VDS=0V
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
I
GSS
(BR)DSS
DSS
−
500
−
−
−
V
ID=1mA, VGS=0V
I
100
4.5
0.5
−
µA
V
V
V
DS=500V, VGS=0V
−
V
GS(th)
DS(on)
2.5
−
DS=10V, I
D=1mA
−
∗
∗
0.38
R
Ω
I
D=5.5A, VGS=10V
| Yfs
|
3.5
−
S
V
V
V
DS=10V, I
DS=25V
GS=0V
D=5.5A
−
1000
400
35
C
iss
−
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Output capacitance
Coss
−
−
Reverse transfer capacitance
Turn-on delay time
Crss
−
−
f=1MHz
∗
∗
∗
∗
t
d(on)
−
−
V
DD 250V, I =5.5A
D
26
Rise time
t
r
−
−
VGS=10V
28
Turn-off delay time
t
d(off)
−
−
R
L
=45.5Ω
=10Ω
DD 250V
75
Fall time
tf
−
−
RG
30
∗
∗
Total gate charge
Q
g
−
−
V
30
I
V
R
D
=11A
Gate-source charge
Qgs
gd
−
−
7
GS=10V
L
∗
=22.7Ω / R =10Ω
G
Gate-drain charge
Q
−
−
12
∗ Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol Min. Typ. Max.
Conditions
IS= 11A, VGS=0V
Unit
V
∗
V
SD
−
−
1.5
∗ Pulsed
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R5011ANJ
Data Sheet
zElectrical characteristic curves
100
20
15
10
5
10
8
Operation in this
area is limited
by RDS(ON)
10V
Ta= 25°C
Pulsed
Ta= 25°C
Pulsed
PW=100us
10V
8.0V
PW=1ms
10
1
8.0V
7.0V
6.0V
5.5V
5.0V
5.5V
5.0V
PW=100ms
7.0V
6.5V
6.5V
6
DC operation
4
6.0V
0.1
0.01
2
Tc = 25°C
Single Pulse
VGS= 4.5V
VGS= 4.5V
0
0
0.1
1
10
100
1000
0
10
20
30
40
50
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE: VDS (V)
DRAIN-SOURCE VOLTAGE: VDS (V)
DRAIN-SOURCE VOLTAGE : VDS ( V )
Fig.1 Maximum Safe Operating Aera
Fig.3 Typical Output Characteristics(
)
Ⅱ
Fig.2 Typical Output Characteristics(
)
Ⅰ
100
10
6
5
4
3
2
1
0
10
1
VDS= 10V
Pulsed
VDS= 10V
ID= 1mA
VGS= 10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
1
0.1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
0.01
0.01
0.001
-50
0
50
100
150
0.1
1
10
100
0
1.5
3
4.5
6
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
CHANNEL TEMPERATURE: Tch (°C)
DRAIN CURRENT : ID (A)
Fig.5 Gate Threshold Voltage
vs. Channel Temperature
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
0.8
0.6
0.4
0.2
0
100
10
Ta=25°C
Pulsed
VGS= 10V
Pulsed
VDS= 10V
Pulsed
ID= 11.0A
1
ID= 11.0A
Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C
ID= 5.5A
ID= 5.5A
0.1
0.01
-50
0
50
100
150
0
5
10
15
0.01
0.1
1
10
100
GATE-SOURCE VOLTAGE : VGS (V)
CHANNEL TEMPERATURE: Tch (°C)
Fig.8 Static Drain-Source On-State
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Fig.9 Forward Transfer Admittance
vs. Drain Current
Resistance vs. Channel Temperature
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R5011ANJ
Data Sheet
10000
1000
100
10
15
10
5
100
Ta= 25°C
DD= 250V
VGS= 0V
Pulsed
V
10
1
ID= 11A
RG= 10Ω
Pulsed
Ciss
Coss
Crss
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
Ta= 25°C
f= 1MHz
GS= 0V
0.1
0.01
V
1
0
0.1
1
10
100
1000
0
0.5
1
1.5
0
10
20
30
40
50
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN-SOURCE VOLTAGE : VDS (V)
TOTAL GATE CHARGE : Qg (nC)
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
Fig.12 Dynamic Input Characteristics
Fig.10 Reverse Drain Current vs.
Sourse-Drain Voltage
10000
1000
100
10
1000
100
10
Ta= 25°C
V
V
DD= 250V
GS= 10V
tf
RG= 10Ω
Pulsed
td(off)
Ta= 25°C
di / dt= 100V / µs
td(on)
V
GS= 0V
tr
Pulsed
1
0.01
0.1
1
10
100
0.1
1
10
100
REVERSE DRAIN CURRENT : IDR (A)
DRAIN CURRENT : ID (A)
Fig.14 Switching Characteristics
Fig.13 Reverse Recovery Time
vs.Reverse Drain Current
1
0.1
Ta = 25°C
Single Pulse : 1Unit
Rth ch-a
（
t
=
t ×Rth ch-a
）（ ） ｒ（ ） ）
（
Rth ch-a = 45.8°C/W
（
）
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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R5011ANJ
Data Sheet
zSwitching characteristics measurement circuit
Pulse width
90%
V
GS
ID
VDS
50%
10%
50%
V
V
GS
DS
R
L
10%
10%
90%
D.U.T.
V
DD
RG
90%
t
d(on)
td(off)
t
r
tf
t
on
toff
Fig.1-1 Switching time measurement circuit
Fig.1-2 Switching waveforms
V
G
VGS
I
D
VDS
Q
g
RL
V
GS
D.U.T.
I
G(Const.)
Q
gs
Qgd
VDD
RG
Charge
Fig.2-1 Gate charge measurement circuit
Fig.2-2 Gate charge waveform
VGS
IAS
VDS
VD(BR)DSS
L
I
AS
D.U.T.
RG
VDD
V
D(BR)DSS
1
2
E
AS
=
L IAS2
V
D(BR)DSS - VDD
Fig.3-1 Avalanche Measurement circuit
Fig.3-2 Avalanche waveform
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
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A
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