RB055L-40TE25 [ROHM]
Schottky Barrier Diode; 肖特基二极管型号: | RB055L-40TE25 |
厂家: | ROHM |
描述: | Schottky Barrier Diode |
文件: | 总4页 (文件大小:339K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet
Schottky Barrier Diode
RB055L-40
Applications
Dimensions(Unit : mm)
Land size figure (Unit : mm)
General rectification
2.0
2.6±0.2
Features
1)Small power mold type.(PMDS)
2)Low IR
5
2
0.1±0.02
ꢀꢀꢀ 0.1
①
②
3)High reliability
2.0±0.2
1.5±0.2
PMDS
Construction
Silicon epitaxial planar
Structure
ROHM : PMDS
JEDEC : SOD-106
①
②
Manufacture Date
Taping specifications(Unit : mm)
2.0±0.05
4.0±0.1
0.3
φ1.55±0.05
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute maximum ratings(Ta=25°C)
Parameter
Limits
40
Symbol
VRM
Unit
V
Reverse voltage (repetitive peak)
Reverse voltage (DC)
VR
40
V
Average rectified forwarfd current
Forward current surge peak (60Hz・1cyc)
Junction temperature
3
Io
IFSM
A
40
A
150
Tj
°C
°C
Storage temperature
40 to 150
Tstg
(*1) Mounted on epoxyboard. 180°Half sine wave
Electrical characteristics(Ta=25°C)
Parameter
Forward voltage
Symbol
Min.
Typ.
Max.
0.65
0.5
Unit
V
Conditions
VF
IR
-
-
-
-
IF=3.0A
VR=40V
Reverse current
mA
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.A
Data Sheet
RB055L-40
Ta=150℃
Ta=125℃
10000
1000
100
10
10000
1000
100
10
f=1MHz
Ta=150℃
Ta=125℃
1000
100
10
Ta=75℃
Ta=75℃
Ta=-25℃
Ta=25℃
Ta=25℃
1
Ta=-25℃
0.1
1
0.01
0.001
0.1
1
0
100 200 300 400 500 600 700
0
10
20
30
0
10
20
30
40
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
400
390
380
370
360
350
340
330
320
310
300
580
570
560
550
540
530
100
Ta=25℃
VR=40V
n=30pcs
Ta=25℃
f=1MHz
VR=0V
90
80
70
60
50
40
30
20
10
0
Ta=25℃
IF=3A
n=30pcs
n=10pcs
AVE:559.6mV
AVE:6.62uA
AVE:329.5pF
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
30
1000
100
10
300
250
200
150
100
50
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
Ifsm
25
20
15
10
5
1cyc
8.3ms
Ifsm
8.3ms 8.3ms
1cyc
AVE:8.20ns
AVE:117.2A
0
0
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
trr DISPERSION MAP
IFSM DISPERSION MAP
Io-PfꢀCHARACTERISTICS
5
250
1000
100
10
4.5
4
Mounted on epoxy board
Rth(j-a)
Ifsm
200
150
100
50
t
3.5
3
DC
D=1/2
Rth(j-c)
IF=1A
2.5
2
Sin(θ=180)
IM=100mA
1.5
1
1
1ms time
300us
0.5
0
0
0.1
1
10
100
0
0.5
1
1.5
2
2.5
3
3.5
AVERAGE RECTIFIED
4
4.5
5
0.001 0.01
0.1
1
TIME:t(s)
Rth-t CHARACTERISTICS
10
100
1000
TIME:t(ms)
IFSM-t CHARACTERISTICS
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.04 - Rev.A
Data Sheet
RB055L-40
5
4.5
4
5
4.5
4
0.5
0.4
0.3
0.2
Io
0A
0V
DC
VR
D=1/2
t
D=t/T
VR=20V
Tj=150℃
3.5
3
3.5
3
Sin(θ=180)
DC
T
2.5
2
2.5
2
D=1/2
DC
D=1/2
Io
0A
0V
1.5
1
1.5
1
VR
=180)
Sin(θ
Sin(θ=180)
t
D=t/T
VR=20V
Tj=150℃
0.1
0
0.5
0
0.5
0
T
0
25
50
75
100
125
150
0
25
50
75
100
125
150
0
10
20
30
40
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
30
25
20
15
10
5
No break at 30kV
AVE:12.8kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
0
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.04 - Rev.A
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