RB085T-60FH [ROHM]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 60V V(RRM), Silicon, TO-220AB, TO-220FN, 3 PIN;
| 型号： | RB085T-60FH |
| 厂家： | 
ROHM |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 60V V(RRM), Silicon, TO-220AB, TO-220FN, 3 PIN 肖特基二极管 |
| 文件： | 总4页 (文件大小：1004K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Schottky barrier diode
RB085T-60
Applications
Dimensions (Unit : mm)
Structure
Switching power supply
Features
1) Cathode common type.
(TO-220)
(1) (2) (3)
2) Low IR
3) High reliability
Construction
Silicon epitaxial planer
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
VRM
VR
Unit
V
60
60
Reverse voltage (repetitive peak)
Reverse voltage (DC)
V
10
Average rectified forward current (*1)
Forward current surge peak (60Hz / 1cyc) (*1)
Junction temperature
Io
A
100
IFSM
Tj
A
150
C
C
Storage temperature
40 to 150
Tstg
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=130C
Electrical characteristic (Ta=25C)
Parameter
Conditions
Symbol
VF
Min.
Typ.
Max.
0.58
300
2.5
Unit
V
Forward voltage
Reverse current
-
-
-
-
-
-
IF=5A
IR
VR=60V
A
Thermal impedance
junction to case
jc
C/W
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2011.04 - Rev.D
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Data Sheet
RB085T-60
ꢀ
Electrical characteristic curves
Ta=150C
Ta=125C
10
1000
100
10
100000
10000
1000
100
f=1MHz
Ta=150C
Ta=75C
Ta=125°C
1
Ta=75C
Ta=25C
Ta=-25C
Ta=25C
Ta=-25C
10
0.1
1
0.1
0.01
1
0.01
0
100
200
300
400
500
600
0
5
10
15
20
25
30
0
10
20
30
40
50
60
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
800
790
780
770
760
750
740
730
720
710
700
550
300
Ta=25C
f=1MHz
VR=0V
Ta=25C
f=1MHz
VR=30V
n=30pcs
Ta=25C
IF=5A
250
200
150
100
50
540
530
520
510
500
n=30pcs
n=10pcs
AVE:36.7uA
AVE:532.6mV
AVE:738.5pF
0
IR DISPERSION MAP
VF DISPERSION MAP
Ct DISPERSION MAP
30
1000
100
10
300
250
200
150
100
50
Ta=25C
IF=0.5A
Ifsm
1cyc
Ifsm
25
20
15
10
5
IR=1A
8.3ms 8.3ms
1cyc
Irr=0.25*IR
n=10pcs
8.3ms
AVE:187.0A
AVE:9.30ns
0
0
1
1
10
100
NUMBER OF CYCLES
trr DISPERSION MAP
IFSM DISPERSION MAP
I
FSM-CYCLE CHARACTERISTICS
Mounted on epoxy board
IF=5A
1000
100
10
100
10
1
15
10
5
IM=100mA
Ifsm
time
t
DC
D=1/2
300us
Rth(j-a)
Rth(j-c)
Sin(θ=180)
1ms
0.1
0
0.001 0.01
0.1
1
TIME:t(s)
10
100
1000
1
10
100
0
5
10
15
20
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
TIME:t(ms)
Rth-t CHARACTERISTICS
I
FSM-t CHARACTERISTICS
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2011.04 - Rev.D
Data Sheet
RB085T-60
ꢀ
30
20
10
0
5
4
3
2
1
0
30
20
10
0
Io
0A
0V
Io
0A
0V
VR
VR
t
t
D=t/T
D=t/T
VR=30V
Tj=150C
VR=30V
Tj=150C
DC
DC
T
Sin(θ=180)
T
D=1/2
D=1/2
D=1/2
DC
Sin(θ=180)
Sin(θ=180)
0
25
50
75
100
125
150
0
25
50
75
100
125
150
0
10
20
30
40
50
60
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(C)
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
Derating Curve"(Io-Ta)
30
25
20
15
10
5
No break at 30kV
AVE:7.50kV
0
C=200pF
C=100pF
R=0Ω
R=1.5kΩ
ESD DISPERSION MAP
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2011.04 - Rev.D
Notice
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R1120A
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