RB085T-90HZ [ROHM]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 90V V(RRM), Silicon, TO-220AB, TO-220FN, 3 PIN;
| 型号： | RB085T-90HZ |
| 厂家： | 
ROHM |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 90V V(RRM), Silicon, TO-220AB, TO-220FN, 3 PIN 肖特基二极管 |
| 文件： | 总4页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RB085T-90
Diodes
Schottky barrier diode
RB085T-90
zApplications
zExternal dimensions (Unit : mm)
zStructure
Switching power supply
4.5±0.3
ꢀꢀꢀ 0.1
2.8±0.2
ꢀꢀꢀ 0.1
10.0±0.3
ꢀꢀꢀ 0.1
zFeatures
1) Cathode common type.
(TO-220)
2) Low IR
3) High reliability
①
1.2
zConstruction
1.3
0.8
Silicon epitaxial planar
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
O220FN
ROHM : Ｔ
Manufacture Date
①
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Limits
Symbol
VRM
VR
Unit
90
90
V
V
Average rectified forward current（*1）
Forward current surge peak （60Hz・1cyc）（*1）
Junction temperature
10
Io
A
100
IFSM
Tj
A
150
℃
℃
Storage temperature
-40 to +150
Tstg
(*1)Tc=100℃max Per chip : Io/2
zElectrical characteristic (Ta=25°C)
Parameter
Forward characteristics
Reverse characteristics
Thermal impedance
Symbol
VF
Min.
Typ.
Max.
0.83
150
2.5
Unit
V
Conditions
-
-
-
-
-
-
IF=5A
VR=90V
junction to case
IR
µA
θjc
℃/W
Rev.B
1/3
RB085T-90
Diodes
zElectrical characteristic curves
Ta=150℃
Ta=125℃
Ta=75℃
10
100000
10000
1000
100
1000
100
10
Ta=150℃
f=1MHz
Ta=125℃
1
Ta=75℃
Ta=25℃
Ta=-25℃
0.1
0.01
Ta=25℃
10
Ta=-25℃
1
0.1
0.01
0.001
1
0
10 20 30 40 50 60 70 80 90
0
100 200 300 400 500 600 700 800 900
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
550
540
530
520
510
500
490
480
470
460
450
790
780
770
760
750
740
200
180
160
140
120
100
80
Ta=25℃
IF=5A
n=30pcs
Ta=25℃
Ta=25℃
VR=90V
n=30pcs
f=1MHz
VR=0V
n=10pcs
60
AVE:14.3uA
40
AVE:498.5pF
AVE:766.6mV
20
0
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
1000
100
10
30
25
20
15
10
5
300
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
Ifsm
250
200
150
100
50
1cyc
8.3ms
Ifsm
8.3ms 8.3ms
1cyc
AVE:136.0A
AVE:7.40ns
trr DISPERSION MAP
Mounted on epoxy board
0
0
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
IFSM DISRESION MAP
15
10
5
100
10
1
1000
100
10
IF=5A
IM=100mA
time
D=1/2
Ifsm
300us
1ms
t
DC
Rth(j-a)
Sin(θ＝180)
Rth(j-c)
0
0.1
0
5
10
AVERAGE RECTIFIED
15
20
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
0.001
0.1
10
1000
TIME:t(s)
Rth-t CHARACTERISTICS
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Rev.B
2/3
RB085T-90
Diodes
10
8
30
20
10
0
30
20
10
0
Io
0A
0V
Io
0A
0V
VR
VR
t
t
D=t/T
VR=45V
Tj=150℃
D=t/T
VR=45V
Tj=150℃
DC
6
DC
T
T
Sin(θ＝180)
D=1/2
D=1/2
D=1/2
DC
4
Sin(θ＝180)
Sin(θ＝180)
2
0
0
10 20 30 40 50 60 70 80 90
0
25
50
75
100
125
150
0
25
50
75
100
125
150
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
30
25
20
15
10
5
No break at 30kV
AVE:5.30kV
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
相关型号：
RB085T-90NZ
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 90V V(RRM), Silicon, TO-220AB, TO-220FN, 3 PIN
ROHM
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