RB876W_11 [ROHM]

Shottky barrier diode; 肖特基势垒二极管
RB876W_11
型号: RB876W_11
厂家: ROHM    ROHM
描述:

Shottky barrier diode
肖特基势垒二极管

二极管
文件: 总3页 (文件大小:963K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Data Sheet  
Shottky barrier diode  
RB876W  
Applications  
Dimensions (Unit : mm)  
Land size figure (Unit : mm)  
High frequency detection  
1.0  
0.5  
0.5  
1.6±0.2  
0.3±0.1  
0.15±0.05  
ꢀꢀꢀ 0.05  
Features  
(3)  
0.7  
1) Ultra small mold type. (EMD3)  
2) Low Ct and high detection efficiency.  
0~0.1  
0.6  
0.6  
EMD3  
(1)  
(2)  
0.5  
0.2±0.1  
ꢀꢀ-0.05  
0.55±0.1  
0.7±0.1  
0.5  
1.0±0.1  
Construction  
Structure  
Silicon epitaxial planar  
ROHM : EMD3  
JEDEC : SOT-416  
JEITA : SC-75A  
dot (year week factory)  
Taping specifications (Unit : mm)  
φ1.5 0.1  
2.0±0.05  
0.3±0.1  
4.0±0.1  
0  
1.8±0.1  
φ0.5±0.1  
0.9±0.2  
Absolute maximum ratings (Ta=25°C)  
Parameter  
Limits  
5
Symbol  
Unit  
V
Reverse voltage  
VR  
Io  
Average rectified forward current (*1)  
Junction temperature  
10  
mA  
°C  
125  
Tj  
Storage temperature  
40 to 125  
Tstg  
°C  
(*1) Rating of per diode  
Electrical characteristics (Ta=25°C)  
Parameter  
Conditions  
Symbol  
Min.  
Typ.  
Max.  
0.35  
120  
Unit  
V
Forward voltage  
VF  
IR  
-
-
-
-
-
IF=1mA  
Reverse current  
μA  
pF  
VR=5V  
Capacitance between terminals  
VR=1V, f=1MHz  
Ct  
0.53  
0.80  
www.rohm.com  
2011.04 - Rev.B  
© 2011 ROHM Co., Ltd. All rights reserved.  
1/2  
Data Sheet  
RB876W  
10  
1
1
1000  
100  
10  
f=1MHz  
Ta=125℃  
Ta=75℃  
Ta=-25℃  
Ta=25℃  
Ta=25℃  
0.1  
Ta=75℃  
Ta=-25℃  
Ta=125℃  
0.1  
0.01  
0
1
0
1
2
3
4
5
300  
600  
900  
1200  
1500  
0
1
2
3
4
5
REVERSE VOLTAGE:VR(V)  
VR-Ct CHARACTERISTICS  
FORWARD VOLTAGE:VF(mV)  
VF-IF CHARACTERISTICS  
REVERSE VOLTAGE:VR(V)  
VR-IR CHARACTERISTICS  
1
300  
290  
280  
270  
260  
250  
300  
Ta=25℃  
Ta=25℃  
VR=5V  
n=30pcs  
Ta=25℃  
IF=1mA  
n=30pcs  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
f=1MHz  
VR=1V  
n=10pcs  
250  
200  
150  
100  
50  
AVE:0.520pF  
AVE:21.63uA  
AVE:275.2mV  
0
VF DISPERSION MAP  
IR DISPERSION MAP  
Ct DISPERSION MAP  
5
1000  
Rth(j-a)  
Rth(j-c)  
4
3
2
1
0
AVE:1.47kV  
Mounted on epoxy board  
100  
IM=1mA  
IF=10mA  
AVE:0.48kV  
time  
1ms  
300us  
C=200pF  
R=0Ω  
C=100pF  
R=1.5kΩ  
10  
0.001 0.01  
0.1  
1
10  
100  
1000  
TIME:t(s)  
Rth-t CHARACTERISTICS  
ESD DISPERSION MAP  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2/2  
2011.04 - Rev.B  
Notice  
N o t e s  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
R1120A  

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