RF101L2S [ROHM]
Fast recovery Diodes (Silicon Epitaxial Planar); 快恢复二极管(硅外延平面)型号: | RF101L2S |
厂家: | ROHM |
描述: | Fast recovery Diodes (Silicon Epitaxial Planar) |
文件: | 总3页 (文件大小:49K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RF
1series
Diodes
Fast recovery Diodes
(Silicon Epitaxial Planar)
RF 1 series
zApplications
zExternal dimensions (Unit : mm)
High frequency rectification
CPD
5.5
2.3
0.5
zFeatures
1) Ultra low VF very fast recovery
2) Fast recovery
0.55
1.2
2.3 2.3
3) Low switching loss
(1) Anode
(2) Cathode
(3) Anode
4) Standard package TO-220FN, CPD
( ) ( ) ( )
1
2
3
TO-220FN
4.5
φ3.2
10.0
2.8
1.2
1.3
(1) Anode
(2) Cathode
(3) Anode
0.8
0.75
2.6
2.54
2.54
( )( )( )
1 2 3
TO-220FN Center tap type cathode common, Dual elements
CPD Center tap type cathode common, Dual elements
Ultra low V
F
type FRD Fast recovery type FRD
200V
Ultra low V
200V
Single
F
type FRD Fast recovery type FRD
200V
Single
VR
VR
200V
I
O
Dual
Single
Dual
Single
I
O
Dual
Dual
−
−
3A
−
−
−
−
−
−
−
−
−
−
−
−
6A
−
−
−
−
5A
6A
10A
15A
16A
20A
30A
−
−
−
−
−
−
−
−
−
10A
−
1/2
RF
1series
Diodes
zAbsolute maximum ratings (Ta=25°C)
Limits
RF071M2S RF101L2S RF301B2S RF501B2S RF601B2D RF601T2D RF1001T2D RF1601T2D RF2001T2D
Parameter
Symbol
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
V
RM
200
200
0.7
200
200
1.0
200
200
3.0
200
200
5.0
200
200
6.0
200
200
6.0
200
200
200
200
16.0
200
200
20.0
V
V
A
V
R
1
1
1
1
1
1
1
1
1
Average rectified forward current
I
O
10.0
Forward peak surge current
(60Hz 1cyc.)
I
FSM
15
20
60
60
60
80
80
80
80
A
Junction temperature
T
j
150
150
150
150
150
150
150
150
150
C
C
Storage temperature
Mounting on glass epoxi board
T
stg
−55 to +150 −55 to +150 −55 to +150 −55 to +150 −55 to +150 −55 to +150 −55 to +150 −55 to +150 −55 to +150
zElectrical characteristics (Ta=25°C)
VF
Typ.
IR
trr
Part No.
IO
VR
Configurate
Package
PMDU
PMDS
Max.
IF
Max.
Typ.
Max.
25ns
Typ.
RF071M2S
RF101L2S
RF301B2S
RF501B2S
0.7A 200V 0.850V
0.790V
0.7A
10µA
10nA
12ns
Single
1A
3A
5A
6A
6A
200V 0.870V
200V 0.930V
200V 0.930V
200V 0.930V
200V 0.930V
0.815V
0.870V
0.870V
0.870V
0.870V
0.870V
0.870V
0.870V
1A
3A
5A
3A
3A
5A
8A
10A
10µA
10µA
10µA
10µA
10µA
10µA
10µA
10µA
10nA
10nA
10nA
10nA
10nA
10nA
10nA
10nA
25ns
25ns
30ns
25ns
25ns
30ns
30ns
30ns
12ns
14ns
15ns
14ns
14ns
15ns
18ns
20ns
Single
Cathode common
Single
CPD(D-pack)
CPD(D-pack)
CPD(D-pack)
TO-220FN
Cathode common
Cathode common
Cathode common
Cathode common
Cathode common
RF601B2D
RF601T2D
10A 200V 0.930V
16A 200V 0.930V
20A 200V 0.930V
TO-220FN
RF1001T2D
TO-220FN
RF1601T2D
RF2001T2D
TO-220FN
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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