RFUS20TM6SFHC9 [ROHM]
Rectifier Diode,;
| 型号： | RFUS20TM6SFHC9 |
| 厂家： | 
ROHM |
| 描述： | Rectifier Diode, 二极管 |
| 文件： | 总6页 (文件大小：858K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
AEC-Q101 Qualified
Super Fast Recovery Diode
RFUS20TM6SFH
Series
Dimensions(Unit : mm)
Structure
+0.3
-0.1
+0.3
-0.1
Ultra Fast Recovery
+0.2
-0.1
Applications
(1) (2) (3)
General rectification
Features
1)Cathode Common Single type.(TO-220)
2)Ultra High switching speed
(1) (2) (3)
+0.1
-0.05
Construction
Silicon epitaxial planar
Absolute maximngs(Tc=25C)
Paramete
Conditions
Duty≦0.5
Limits
600
600
20
Symb
M
Unit
V
Repetitive peak reverse voltage
Reverse volta
Direct voltage
V
60Hz half sin wave, Resistance load,
Average rfied forward current
Io
A
Tc=50C
60Hz half sin wave, Non-repetitive
IFSM
Foard nt surge peak
100
A
one cycle peak value, Tj=25C
nctemperature
Sage temperature
150
Tj
°C
°C
55 to 150
Tstg
Electrical characteristics(Tj=25C)
Parameter
Conditions
IF=20A
Typ.
2.3
0.05
23
Symbol
VF
Min.
－
Max.
2.8
10
Unit
V
Forward voltage
Reverse current
VR=600V
IR
μA
－
Reverse recovery time
Thermal Resistance
IF=0.5A,IR=1A,Irr=0.25×IR
junction to case
trr
35
ns
－
－
Rth(j-c)
1.8
－
C / W
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2011.06 - Rev.A
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1/3
Data Sheet
RFUS20TM6SFH
Electrical characteristics curves
100
100000
10000
1000
100
1000
100
10
Tj=125C
Tj=150C
f=1MHz
Tj=150C
Tj=25C
10
Tj=125C
Tj=25C
Tj=75C
Tj=75C
Tj=25C
1
10
1
0.1
0
50
100 150 200 250 300 350
0
1000
2000
3000
4000
0
5
10
20
25
30
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
REVERSE VOLGE : VR(V)
-Ct CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
450
445
44
35
425
420
415
410
405
1000
100
10
2500
2400
2300
2200
2100
2000
1900
Ta=25C
f=1MHz
VR=0V
Tｊ=25C
IF=20A
Tｊ=25C
VR=600V
n=20pcs
AVE : 2113mV
n=20pcs
n=10pcs
AVE : 415.9pF
AVE : 61.
1
IR RSION MAP
Ct DISPERSION MAP
V
F DISPERSION MAP
1000
100
10
300
250
200
150
100
50
40
35
25
20
15
25C
IF=A
1cyc
IFSM
1A
Irr=0.25×IR
n=10pcs
8.3ms
IFSM
AVE : 156A
AVE:26.1ns
8.3ms 8.3ms
1cyc.
0
1
1
10
100
IFSM DISON MAP
trr DISPERSION MAP
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
100
10
15
12
9
10
IFSM
Rth(j-c)
time
1
AVE : 11.0kV
6
AVE : 1.20kV
3
0
0.1
1
10
100
C=200pF
C=100pF
0.001
0.01
0.1
1
10
100
1000
R=0
R=1.5k
TIME : t(ms)
TIME : t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.06 - Rev.A
Data Sheet
RFUS20TM6SFH
Io
0A
0V
90
80
35
30
25
20
15
10
5
VR
t
D.C.
D=t/T
VR=480V
T
half sin wave
70
Tj=150C
D=0.8
D=0.5
D.C.
60
D=0.2
50
D=0.8
D=0.5
D=0.1
half sin wave
D=0.2
40
30
20
10
0
D=0.05
D=0.05
D=0.1
60
0
0
5
10
15
20
25
30
35
0
30
90
120
150
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.06 - Rev.A
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(Note 1)
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4. The Products are not subjeto rdiation-proof design.
5. Please verify and cocharacteristics of tor mounted products in using the Products.
6. In particularansient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation performance charactics after on-board mounting is strongly recommended. Avoid applying power
exceeding norrated poweexcinthe power rating under steady-state loading condition may negatively affect
prodct performance and reliabi.
7. De-rate wer Dissipation () depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
nt temperature.
Confirm that operation temperature is within the specified range described in the product specification.
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Precaution for Mounting / Circuit board design
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