RGC80TSX8R [ROHM]
RGC80TSX8R是适合电压共振型逆变器及IH用途的逆向导通IGBT。;
| 型号： | RGC80TSX8R |
| 厂家： | 
ROHM |
| 描述： | RGC80TSX8R是适合电压共振型逆变器及IH用途的逆向导通IGBT。 双极性晶体管 |
| 文件： | 总11页 (文件大小：319K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RGC80TSX8R
1800V 40A Field Stop Trench IGBT
Datasheet
lOutline
TO-247N
VCES
IC (100°C)
VCE(sat) (Typ.)
PD
1800V
40A
2.2V
535W
(1)(2)(3)
lFeatures
lInner Circuit
1) Low Collector - Emitter Saturation Voltage
2) High Speed Switching
(2)
(3)
(1) Gate
(2) Collector
(3) Emitter
*1
3) Low Switching Loss & Soft Switching
4) Monolithic Body Diode
(1)
*1 Monolithic Body Diode
with Low Forward Voltage
5) Pb - free Lead Plating ; RoHS Compliant
lPackaging Specifications
Packaging
Tube
lApplication
Voltage - resonance Inverter
Reel Size (mm)
-
IH
Tape Width (mm)
Type
-
450
Basic Ordering Unit (pcs)
Packing Code
Marking
C11
RGC80TSX8R
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Symbol
VCES
VGES
IC
Value
1800
±30
80
Unit
V
Gate - Emitter Voltage
V
TC = 25°C
A
Collector Current
TC = 100°C
IC
40
A
*1
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
120
80
A
ICP
TC = 25°C
IF
IF
A
TC = 100°C
40
A
*1
80
A
IFP
TC = 25°C
PD
PD
Tj
535
267
W
W
TC = 100°C
Operating Junction Temperature
Storage Temperature
-40 to +175
-55 to +175
°C
°C
Tstg
*1 Pulse width limited by Tjmax.
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© 2019 ROHM Co., Ltd. All rights reserved.
2019.04 - Rev.B
1/10
Datasheet
Unit
RGC80TSX8R
lThermal Resistance
Values
Parameter
Symbol
Min.
Typ.
Max.
0.28
0.28
Rθ(j-c)
Rθ(j-c)
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
-
-
-
-
C/W
C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
Max.
-
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
ICES VCE = 1860V, VGE= 0V
IGES VGE = ±30V, VCE = 0V
VGE(th) VCE = 5V, IC = 120.7mA
1800
-
-
Collector Cut - off Current
-
-
10
±200
7.0
μA
nA
V
Gate - Emitter Leakage
Current
-
Gate - Emitter Threshold
Voltage
5.0
6.0
IC = 40A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
Collector - Emitter Saturation
Voltage
-
-
2.2
2.9
5.0
-
V
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© 2019 ROHM Co., Ltd. All rights reserved.
2019.04 - Rev.B
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Datasheet
RGC80TSX8R
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
9550
115
102
468
93
Parameter
Symbol
Conditions
Unit
pF
Min.
Max.
Cies VCE = 30V
Coes VGE = 0V
Input Capacitance
Output Capacitance
Reverse transfer Capacitance
Total Gate Charge
Gate - Emitter Charge
Gate - Collector Charge
Turn - on Delay Time
Rise Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Cres
Qg
f = 1MHz
-
VCE = 600V
-
Qge IC = 40A
Qgc VGE = 15V
td(on)
-
nC
155
80
-
-
IC = 40A, VCC = 600V,
VGE = 15V, RG = 10Ω,
Tj = 25°C
Inductive Load
*Eon include diode
reverse recovery
tr
td(off)
tf
53
-
ns
mJ
ns
Turn - off Delay Time
Fall Time
565
55
-
-
Eon
Eoff
td(on)
tr
Turn - on Switching Loss
Turn - off Switching Loss
Turn - on Delay Time
Rise Time
1.85
1.60
68
-
2.15
-
-
-
-
-
-
IC = 40A, VCC = 600V,
VGE = 15V, RG = 10Ω,
Tj = 175°C
Inductive Load
*Eon include diode
reverse recovery
52
td(off)
tf
Turn - off Delay Time
Fall Time
670
55
Eon
Eoff
Turn - on Switching Loss
Turn - off Switching Loss
1.95
2.00
mJ
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© 2019 ROHM Co., Ltd. All rights reserved.
2019.04 - Rev.B
3/10
Datasheet
RGC80TSX8R
lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
Max.
IF = 40A, VGE = 0V
Tj = 25°C
VF
Diode Forward Voltage
-
-
1.8
2.4
2.3
-
Tj = 175°C
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© 2019 ROHM Co., Ltd. All rights reserved.
2019.04 - Rev.B
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Datasheet
RGC80TSX8R
lElectrical Characteristic Curves
Fig.1 Power Dissipation
vs. Case Temperature
600
Fig.2 Collector Current
vs. Case Temperature
90
80
70
60
50
40
30
20
10
0
500
400
300
200
100
0
Tj ≤ 175ºC
VGE ≥ 15V
0
25 50 75 100 125 150 175
Case Temperature : TC [°C ]
0
25 50 75 100 125 150 175
Case Temperature : TC [°C ]
Fig.3 Forward Bias Safe Operating Area
1000
Fig.4 Reverse Bias Safe Operating Area
1000
100
10
100
10μs
100μs
10
1
1
0.1
0.01
0.1
Tj ≤ 175ºC
VGE = 15V
TC = 25ºC
Single Pulse
0.01
1
10
100
1000 10000
1
10
100
1000 10000
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Voltage : VCE [V]
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© 2019 ROHM Co., Ltd. All rights reserved.
2019.04 - Rev.B
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Datasheet
RGC80TSX8R
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
80
80
Tｊ = 25ºC
Tｊ = 175ºC
VGE = 20V
VGE = 20V
60
60
VGE = 15V
VGE = 15V
40
40
20
0
VGE = 10V
VGE = 8V
VGE = 10V
VGE = 8V
20
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Voltage : VCE [V]
Fig.8 Typical Collector to Emitter Saturation
Fig.7 Typical Transfer Characteristics
Voltage vs. Junction Temperature
4
80
VGE = 15V
VCE = 10V
IC = 80A
3
60
IC = 40A
Tj = 175ºC
2
40
Tj = 25ºC
IC = 20A
1
20
0
0
25 50 75 100 125 150 175
0
2
4
6
8
10 12
Gate To Emitter Voltage : VGE [V]
Junction Temperature : Tj [°C ]
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© 2019 ROHM Co., Ltd. All rights reserved.
2019.04 - Rev.B
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Datasheet
RGC80TSX8R
lElectrical Characteristic Curves
Fig.9 Typical Collector to Emitter Saturation
Voltage vs. Gate to Emitter Voltage
Fig.10 Typical Collector to Emitter Saturation
Voltage vs. Gate to Emitter Voltage
20
20
Tj = 175ºC
Tj = 25ºC
IC = 80A
IC = 80A
15
15
IC = 40A
IC = 40A
IC = 20A
IC = 20A
10
10
5
0
5
0
5
10
15
20
5
10
15
20
Gate To Emitter Voltage : VGE [V]
Gate To Emitter Voltage : VGE [V]
Fig.11 Typical Switching Time
vs. Collector Current
Fig.12 Typical Switching Energy Losses
vs. Collector Current
100
1000
td(off)
tf
td(on)
tr
10
100
10
1
Eon
1
Eoff
VCC = 600V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
VCC = 600V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
0.1
10 20 30 40 50 60 70 80
Collecter Current : IC [A]
10 20 30 40 50 60 70 80
Collecter Current : IC [A]
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© 2019 ROHM Co., Ltd. All rights reserved.
2019.04 - Rev.B
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Datasheet
RGC80TSX8R
lElectrical Characteristic Curves
Fig.13 Typical Capacitance
Fig.14 Typical Gate Charge
15
vs. Collector to Emitter Voltage
100000
10000
1000
100
Cies
Coes
10
5
Cres
f = 1MHz
VGE = 0V
Tj = 25ºC
VCC = 600V
IC = 40A
Tj = 25ºC
10
0
0.01
0.1
1
10
100
0
100 200 300 400 500
Gate Charge : QG [nC]
Collector To Emitter Voltage : VCE [V]
Fig.15 Typical Diode Forward Current
vs. Forward Voltage
80
60
Tj = 25ºC
Tj = 175ºC
40
20
VGE = 0V
0
0
1
2
3
4
5
Forward Voltage : VF [V]
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© 2019 ROHM Co., Ltd. All rights reserved.
2019.04 - Rev.B
8/10
Datasheet
RGC80TSX8R
lElectrical Characteristic Curves
Fig.16 Typical Transient Thermal Impedance
1
D = 0.5
0.2
0.1
0.1
PDM
0.01
t1
0.05
t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC
0.02
0.001
0.01
Single Pulse
0.0001
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1 [s]
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© 2019 ROHM Co., Ltd. All rights reserved.
2019.04 - Rev.B
9/10
Datasheet
RGC80TSX8R
●Inductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
VGE
D.U.T.
10%
VG
90%
10%
IC
Fig.17 Inductive Load Circuit
tf
td(off)
tr
td(on)
ton
toff
VCE
10%
VCE(sat)
Eon
Eoff
Fig.18 Inductive Load Waveform
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© 2019 ROHM Co., Ltd. All rights reserved.
2019.04 - Rev.B
10/10
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
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