RGT50NS65D(LPDS) [ROHM]
罗姆的IGBT（绝缘栅极型双极晶体管）产品为广大的高电压、大电流应用的高效化和节能化做出了贡献。;
| 型号： | RGT50NS65D(LPDS) |
| 厂家： | 
ROHM |
| 描述： | 罗姆的IGBT（绝缘栅极型双极晶体管）产品为广大的高电压、大电流应用的高效化和节能化做出了贡献。 栅 双极性晶体管 栅极 |
| 文件： | 总12页 (文件大小：738K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RGT50NS65D
650V 25A Field Stop Trench IGBT
Data Sheet
lOutline
LPDS / TO-262
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
25A
1.65V
194W
(1)
(3)
(1)(2)(3)
lFeatures
lInner Circuit
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss
(2)
(1) Gate
(2) Collector
(3) Emitter
*1
3) Short Circuit Withstand Time 5μs
(1)
4) Built in Very Fast & Soft Recovery FRD
(RFN - Series)
*1 Built in FRD
(3)
5) Pb - free Lead Plating ; RoHS Compliant
lPackaging Specifications
Packaging
Taping / Tube
330 / -
lApplications
General Inverter
Reel Size (mm)
UPS
Tape Width (mm)
Type
24 / -
Power Conditioner
Welder
Basic Ordering Unit (pcs) 1,000 / 1,000
Packing Code
Marking
TL / C9
RGT50NS65D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Symbol
VCES
VGES
IC
Value
Unit
V
650
Gate - Emitter Voltage
V
30
TC = 25°C
48
A
Collector Current
TC = 100°C
IC
25
A
*1
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
75
A
ICP
TC = 25°C
IF
IF
35
A
TC = 100°C
20
75
A
*1
A
IFP
TC = 25°C
PD
PD
Tj
194
W
W
°C
°C
TC = 100°C
97
Operating Junction Temperature
-40 to +175
-55 to +175
Tstg
Storage Temperature
*1 Pulse width limited by Tjmax.
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© 2016 ROHM Co., Ltd. All rights reserved.
2016.01 - Rev.A
1/11
Data Sheet
RGT50NS65D
lThermal Resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
Rθ(j-c)
Rθ(j-c)
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
-
-
-
-
0.77
2.12
°C/W
°C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
650
Max.
-
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
-
-
ICES
VCE = 650V, VGE = 0V
Collector Cut - off Current
-
-
10
200
7.0
μA
nA
V
IGES
VGE = 30V, VCE = 0V
Gate - Emitter Leakage Current
-
Gate - Emitter Threshold
Voltage
VGE(th) VCE = 5V, IC = 17.5mA
5.0
6.0
IC = 25A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
Collector - Emitter Saturation
Voltage
-
-
1.65
2.15
2.1
-
V
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© 2016 ROHM Co., Ltd. All rights reserved.
2016.01 - Rev.A
2/11
Data Sheet
RGT50NS65D
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
1400
56
Parameter
Symbol
Conditions
Unit
Min.
Max.
Cies
Coes
Cres
Qg
VCE = 30V
Input Capacitance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VGE = 0V
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate - Emitter Charge
Gate - Collector Charge
Turn - on Delay Time
Rise Time
pF
nC
f = 1MHz
22
VCE = 300V
49
Qge
Qgc
td(on)
tr
IC = 25A
15
VGE = 15V
19
IC = 25A, VCC = 400V
VGE = 15V, RG = 10Ω
Tj = 25°C
27
32
ns
ns
td(off)
tf
td(on)
tr
td(off)
tf
Turn - off Delay Time
Fall Time
88
Inductive Load
IC = 25A, VCC = 400V
VGE = 15V, RG = 10Ω
Tj = 175°C
65
Turn - on Delay Time
Rise Time
28
37
Turn - off Delay Time
Fall Time
100
110
Inductive Load
IC = 75A, VCC = 520V
VP = 650V, VGE = 15V
RG = 50Ω, Tj = 175°C
Reverse Bias Safe Operating Area
Short Circuit Withstand Time
RBSOA
FULL SQUARE
-
V
CC ≦ 360V
tsc
VGE = 15V
Tj = 25°C
5
-
-
μs
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© 2016 ROHM Co., Ltd. All rights reserved.
2016.01 - Rev.A
3/11
Data Sheet
RGT50NS65D
lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
Min.
Max.
IF = 20A
VF
Tj = 25°C
Diode Forward Voltage
Diode Reverse Recovery Time
-
-
1.45
1.25
1.9
-
V
Tj = 175°C
trr
-
-
-
-
-
-
58
-
-
-
-
-
-
ns
A
IF = 20A
VCC = 400V
diF/dt = 200A/μs
Tj = 25°C
Diode Peak Reverse Recovery
Current
Irr
6.3
Diode Reverse Recovery
Charge
Qrr
0.20
256
10.4
1.35
μC
ns
A
trr
Diode Reverse Recovery Time
IF = 20A
VCC = 400V
diF/dt = 200A/μs
Tj = 175°C
Diode Peak Reverse Recovery
Current
Irr
Diode Reverse Recovery
Charge
Qrr
μC
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© 2016 ROHM Co., Ltd. All rights reserved.
2016.01 - Rev.A
4/11
Data Sheet
RGT50NS65D
lElectrical Characteristic Curves
Fig.1 Power Dissipation vs. Case Temperature
Fig.2 Collector Current vs. Case Temperature
60
50
40
30
20
200
180
160
140
120
100
80
60
40
ꢀ
10
0
Tj≦175ºC
GE≧15V
V
20
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
Case Temperature : TC [ºC]
Case Temperature : TC [ºC]
Fig.3 Forward Bias Safe Operating Area
Fig.4 Reverse Bias Safe Operating Area
1000
100
10µs
100
10
80
60
40
20
0
100µs
1
0.1
0.01
TC= 25ºC
Single Pulse
Tj≦175ºC
VGE=15V
1
10
100
1000
0
200
400
600
800
Collector To Emitter Voltage : VCE[V]
Collector To Emitter Voltage : VCE[V]
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© 2016 ROHM Co., Ltd. All rights reserved.
2016.01 - Rev.A
5/11
Data Sheet
RGT50NS65D
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
75
75
Tj= 25ºC
Tj= 175ºC
VGE= 20V
VGE= 20V
VGE= 15V
60
45
30
15
0
60
45
30
15
0
VGE= 15V
VGE= 12V
VGE= 12V
VGE= 10V
VGE= 8V
VGE= 10V
VGE= 8V
4
0
1
2
3
4
5
0
1
2
3
5
Collector To Emitter Voltage : VCE[V]
Collector To Emitter Voltage : VCE[V]
Fig.7 Typical Transfer Characteristics
Fig.8 Typical Collector To Emitter Saturation Voltage
vs. Junction Temperature
50
4
VGE= 15V
VCE= 10V
IC= 50A
40
30
20
10
0
3
IC= 25A
2
IC= 12A
1
Tj= 175ºC
Tj= 25ºC
10
0
25
50
75
100
125
150
175
0
2
4
6
8
12
Gate To Emitter Voltage : VGE [V]
Junction Temperature : Tj [ºC]
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© 2016 ROHM Co., Ltd. All rights reserved.
2016.01 - Rev.A
6/11
Data Sheet
RGT50NS65D
lElectrical Characteristic Curves
Fig.9 Typical Collector To Emitter Saturation Voltage
Fig.10 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
vs. Gate To Emitter Voltage
20
20
Tj= 25ºC
Tj= 175ºC
IC= 50A
15
15
10
5
IC= 50A
IC= 25A
IC= 25A
10
IC= 12A
IC= 12A
5
0
0
5
10
15
20
5
10
15
20
Gate To Emitter Voltage : VGE [V]
Gate To Emitter Voltage : VGE [V]
Fig.12 Typical Switching Time
vs. Gate Resistance
Fig.11 Typical Switching Time
vs. Collector Current
1000
100
10
1000
100
10
VCC=400V, IC=25A
VGE=15V, Tj=175ºC
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive ｌoad
Inductive ｌoad
tf
tf
td(off)
td(off)
tr
td(on)
tr
td(on)
0
10
20
30
40
50
0
10
20
30
40
50
Collector Current : IC [A]
Gate Resistance : RG [Ω]
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© 2016 ROHM Co., Ltd. All rights reserved.
2016.01 - Rev.A
7/11
Data Sheet
RGT50NS65D
lElectrical Characteristic Curves
Fig.13 Typical Switching Energy Losses
Fig.14 Typical Switching Energy Losses
vs. Collector Current
vs. Gate Resistance
10
10
Eoff
Eon
1
1
Eoff
0.1
0.01
0.1
Eon
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive ｌoad
VCC=400V, IC=25A
VGE=15V, Tj=175ºC
Inductive ｌoad
0.01
0
10
20
30
40
50
0
10
20
30
40
50
Collector Current : IC [A]
Gate Resistance : RG [Ω]
Fig.15 Typical Capacitance
vs. Collector To Emitter Voltage
Fig.16 Typical Gate Charge
10000
1000
100
10
15
Cies
10
5
Coes
Cres
f=1MHz
VGE=0V
Tj=25ºC
VCC=300V
IC=25A
Tj=25ºC
1
0
0.01
0.1
1
10
100
0
10
20
30
40
50
Collector To Emitter Voltage : VCE[V]
Gate Charge : Qg [nC]
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© 2016 ROHM Co., Ltd. All rights reserved.
2016.01 - Rev.A
8/11
Data Sheet
RGT50NS65D
lElectrical Characteristic Curves
Fig.17 Typical Diode Forward Current
vs. Forward Voltage
Fig.18 Typical Diode Reverse Recovery Time
vs. Forward Current
400
75
60
45
30
VCC=400V
diF/dt=200A/µs
Inductive ｌoad
300
200
100
0
Tj= 175ºC
Tj= 175ºC
15
Tj= 25ºC
Tj= 25ºC
0
0
10
20
30
40
50
0
0.5
1
1.5
2
2.5
3
Forward Voltage : VF[V]
Forward Current : IF [A]
Fig.19 Typical Diode Reverse Recovery Current
Fig.20 Typical Diode Reverse Recovery Charge
vs. Forward Current
vs. Forward Current
20
2.5
VCC=400V
diF/dt=200A/µs
Inductive ｌoad
2
1.5
1
15
Tj= 175ºC
10
Tj= 175ºC
5
0.5
0
VCC=400V
diF/dt=200A/µs
Inductive ｌoad
Tj= 25ºC
10
Tj= 25ºC
0
0
20
30
40
50
0
10
20
30
40
50
Forward Current : IF [A]
Forward Current : IF [A]
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© 2016 ROHM Co., Ltd. All rights reserved.
2016.01 - Rev.A
9/11
Data Sheet
RGT50NS65D
lElectrical Characteristic Curves
Fig.21 IGBT Transient Thermal Impedance
10
1
D= 0.5
0.2
0.1
PDM
0.1
0.01
t1
t2
Duty=t1/t2
Peak Tj=PDM×ZthJC+TC
0.01
Single Pulse
0.001
0.02
0.05
0.0001
0.01
0.1
1
Pulse Width : t1[s]
Fig.22 Diode Transient Thermal Impedance
10
1
D= 0.5
0.2
0.1
PDM
0.1
Single Pulse
0.01
0.02
t1
t2
0.05
Duty=t1/t2
Peak Tj=PDM×ZthJC+TC
0.01
0.0001
0.001
0.01
0.1
1
Pulse Width : t1[s]
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© 2016 ROHM Co., Ltd. All rights reserved.
2016.01 - Rev.A
10/11
Data Sheet
RGT50NS65D
lInductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
D.U.T.
VGE
10%
VG
90%
10%
IC
Fig.23 Inductive Load Circuit
td(off)
td(on)
tr
tf
ton
toff
trr , Qrr
IF
VCE
diF/dt
10%
VCE(sat)
Eon
Eoff
Irr
Fig.24 Inductive Load Waveform
Fig.25 Diode Reverce Recovery Waveform
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© 2016 ROHM Co., Ltd. All rights reserved.
2016.01 - Rev.A
11/11
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
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equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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© 2016 ROHM Co., Ltd. All rights reserved.
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