RGT8NS65D(LPDS) [ROHM]

罗姆的IGBT（绝缘栅极型双极晶体管）产品为高电压、大电流应用的高效化和节能化作贡献。;


型号：	RGT8NS65D(LPDS)
厂家：	ROHM
描述：	罗姆的IGBT（绝缘栅极型双极晶体管）产品为高电压、大电流应用的高效化和节能化作贡献。栅双极性晶体管栅极
文件：	总12页 (文件大小：730K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RGT8NS65D

650V 4A Field Stop Trench IGBT

Data Sheet

lOutline

LPDS / TO-262

V_CES

I_C(100°C)

V_{CE(sat) (Typ.)}

P_D

650V

(2)

1.65V

65W

(1)

(3)

(1)(2)(3)

lFeatures

lInner Circuit

1) Low Collector - Emitter Saturation Voltage

2) Low Switching Loss

(2)

(1) Gate

(2) Collector

(3) Emitter

3) Short Circuit Withstand Time 5μs

(1)

4) Built in Very Fast & Soft Recovery FRD

(RFN - Series)

*1 Built in FRD

(3)

5) Pb - free Lead Plating ; RoHS Compliant

lPackaging Specifications

Packaging

Taping / Tube

330 / -

lApplications

General Inverter

Reel Size (mm)

UPS

Tape Width (mm)

Type

24 / -

Power Conditioner

Welder

Basic Ordering Unit (pcs) 1,000 / 1,000

Packing Code

Marking

TL / C9

RGT8NS65D

lAbsolute Maximum Ratings (at T_C= 25°C unless otherwise specified)

Parameter

Collector - Emitter Voltage

Symbol

V_CES

V_GES

I_C

Value

Unit

650

Gate - Emitter Voltage

30

T_C= 25°C

Collector Current

T_C= 100°C

I_C

Pulsed Collector Current

Diode Forward Current

Diode Pulsed Forward Current

Power Dissipation

I_CP

T_C= 25°C

I_F

T_C= 100°C

I_FP

T_C= 25°C

P_D

T_j

°C

T_C= 100°C

Operating Junction Temperature

-40 to +175

-55 to +175

T_stg

Storage Temperature

*1 Pulse width limited by T_jmax.

www.rohm.com

2015.11 - Rev.C

1/11

Data Sheet

RGT8NS65D

lThermal Resistance

Values

Parameter

Symbol

Unit

Min.

Typ.

Max.

R_θ(j-c)

Thermal Resistance IGBT Junction - Case

Thermal Resistance Diode Junction - Case

2.30

8.70

°C/W

lIGBT Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

650

Max.

Collector - Emitter Breakdown

Voltage

BV_CESI_C= 10μA, V_GE= 0V

I_CES

V_CE= 650V, V_GE= 0V

Collector Cut - off Current

200

7.0

μA

I_GES

V_GE= 30V, V_CE= 0V

Gate - Emitter Leakage Current

Gate - Emitter Threshold

Voltage

V_GE(th)V_CE= 5V, I_C= 2.8mA

5.0

6.0

I_C= 4A, V_GE= 15V

V_CE(sat)T_j= 25°C

T_j= 175°C

Collector - Emitter Saturation

Voltage

1.65

2.1

www.rohm.com

2015.11 - Rev.C

2/11

Data Sheet

RGT8NS65D

lIGBT Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

220

Parameter

Symbol

Conditions

Unit

Min.

Max.

C_ies

C_oes

C_res

Q_g

V_CE= 30V

Input Capacitance

V_GE= 0V

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate - Emitter Charge

Gate - Collector Charge

Turn - on Delay Time

Rise Time

f = 1MHz

4.5

13.5

V_CE= 400V

Q_ge

Q_gc

t_d(on)

t_r

I_C= 4A

V_GE= 15V

5.5

I_C= 4A, V_CC= 400V

V_GE= 15V, R_G= 50Ω

T_j= 25°C

t_d(off)

t_f

t_d(on)

t_r

t_d(off)

t_f

Turn - off Delay Time

Fall Time

Inductive Load

I_C= 4A, V_CC= 400V

V_GE= 15V, R_G= 50Ω

T_j= 175°C

Turn - on Delay Time

Rise Time

Turn - off Delay Time

Fall Time

Inductive Load

I_C= 12A, V_CC= 520V

V_P= 650V, V_GE= 15V

R_G= 50Ω, T_j= 175°C

Reverse Bias Safe Operating Area

Short Circuit Withstand Time

RBSOA

FULL SQUARE

_CC≦ 360V

t_sc

V_GE= 15V

T_j= 25°C

μs

www.rohm.com

2015.11 - Rev.C

3/11

Data Sheet

RGT8NS65D

lFRD Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

Max.

I_F= 4A

V_F

T_j= 25°C

Diode Forward Voltage

Diode Reverse Recovery Time

1.45

1.4

1.9

T_j= 175°C

t_rr

4.3

I_F= 4A

V_CC= 400V

di_F/dt = 200A/μs

T_j= 25°C

Diode Peak Reverse Recovery

Current

I_rr

Diode Reverse Recovery

Charge

Q_rr

0.09

μC

t_rr

Diode Reverse Recovery Time

I_F= 4A

V_CC= 400V

di_F/dt = 200A/μs

T_j= 175°C

Diode Peak Reverse Recovery

Current

I_rr

5.4

Diode Reverse Recovery

Charge

Q_rr

0.27

μC

www.rohm.com

2015.11 - Rev.C

4/11

Data Sheet

RGT8NS65D

lElectrical Characteristic Curves

Fig.1 Power Dissipation vs. Case Temperature

Fig.2 Collector Current vs. Case Temperature

ꢀ

T_j≦175ºC

T_j≦175℃

_≧≧_15V15V

_GG_EE

75 100 125 150 175

Case Temperature : Tc [ºC]

Fig.3 Forward Bias Safe Operating Area

Fig.4 Reverse Bias Safe Operating Area

100

10µs

100µs

0.1

0.01

T_C= 25ºC

Single Pulse

T_j≦175ºC

V_GE=15V

100

1000

200

400

600

800

Collector To Emitter Voltage : V_CE[V]

www.rohm.com

2015.11 - Rev.C

5/11

Data Sheet

RGT8NS65D

lElectrical Characteristic Curves

Fig.5 Typical Output Characteristics

Fig.6 Typical Output Characteristics

T_j= 175ºC

T_j= 25ºC

V_GE= 20V

V_GE= 15V

V_GE= 12V

V_GE= 20V

V_GE= 12V

V_GE= 15V

V_GE= 10V

Collector To Emitter Voltage : V_CE[V]

Fig.7 Typical Transfer Characteristics

Fig.8 Typical Collector To Emitter Saturation Voltage

vs. Junction Temperature

V_CE= 10V

V_GE= 15V

I_C= 8A

I_C= 4A

I_C= 2A

T_j= 175ºC

T_j= 25ºC

100

125

150

175

Gate To Emitter Voltage : V_GE[V]

Junction Temperature : T_j[ºC]

www.rohm.com

2015.11 - Rev.C

6/11

Data Sheet

RGT8NS65D

lElectrical Characteristic Curves

Fig.9 Typical Collector To Emitter Saturation Voltage

Fig.10 Typical Collector To Emitter Saturation Voltage

vs. Gate To Emitter Voltage

T_j= 175ºC

T_j= 25ºC

I_C= 8A

I =8A

I_C=_C4A

I_C= 4A

I_C= 2A

Gate To Emitter Voltage : V_GE[V]

Fig.11 Typical Switching Time

vs. Collector Current

1000

Fig.12 Typical Switching Time

vs. Gate Resistance

1000

t_d(off)

t_f

100

t_d(off)

t_r

t_d(on)

t_r

V_CC=400V, V_GE=15V

R_G=50Ω, T_j=175ºC

Inductive ｌoad

V_CC=400V, I_C=4A

V_GE=15V, T_j=175ºC

Inductive ｌoad

Collector Current : I_C[A]

Gate Resistance : R_G[Ω]

www.rohm.com

2015.11 - Rev.C

7/11

Data Sheet

RGT8NS65D

lElectrical Characteristic Curves

Fig.13 Typical Switching Energy Losses

Fig.14 Typical Switching Energy Losses

vs. Gate Resistance

vs. Collector Current

E_on

0.1

E_off

0.1

0.01

E_off

V_CC=400V, I_C=4A

V_GE=15V, T_j=175ºC

Inductive ｌoad

V_CC=400V, V_GE=15V

R_G=50Ω, T_j=175ºC

E_on

Inductive ｌoad

0.01

Collector Current : I_C[A]

Gate Resistance : R_G[Ω]

Fig.15 Typical Capacitance

vs. Collector To Emitter Voltage

Fig.16 Typical Gate Charge

10000

1000

100

Cies

Coes

V_CC=400V

I_C=4A

T_j=25ºC

f=1MHz

V_GE=0V

T_j=25ºC

Cres

0.01

0.1

100

Collector To Emitter Voltage : V_CE[V]

Gate Charge : Q_g[nC]

www.rohm.com

2015.11 - Rev.C

8/11

Data Sheet

RGT8NS65D

lElectrical Characteristic Curves

Fig.17 Typical Diode Forward Current

vs. Forward Voltage

Fig.18 Typical Diode Reverse Recovery Time

vs. Forward Current

120

100

T_j= 175ºC

T_j= 25ºC

V_CC=400V

di_F/dt=200A/µs

Inductive ｌoad

T_j= 175ºC

T_j= 25ºC

0.5

1.5

2.5

Forward Voltage : V_F[V]

Forward Current : I_F[A]

Fig.19 Typical Diode Reverse Recovery Current

Fig.20 Typical Diode Reverse Recovery Charge

vs. Forward Current

0.5

V_CC=400V

di_F/dt=200A/µs

Inductive ｌoad

0.4

0.3

0.2

0.1

T_j= 175ºC

T_j= 25ºC

T_j= 175ºC

V_CC=400V

di_F/dt=200A/µs

Inductive ｌoad

T_j= 25ºC

Forward Current : I_F[A]

www.rohm.com

2015.11 - Rev.C

9/11

Data Sheet

RGT8NS65D

lElectrical Characteristic Curves

Fig.21 IGBT Transient Thermal Impedance

100

D= 0.5

0.2

0.1

P_DM

Duty=t1/t2

Peak T_j=P_DM×Z_thJC+T_C

0.01

Single Pulse

0.001

0.02

0.05

0.1

0.0001

0.01

0.1

Pulse Width : t1[s]

Fig.22 Diode Transient Thermal Impedance

100

D= 0.5

0.2

0.1

P_DM

Single Pulse

0.01

Duty=t1/t2

0.05

0.02

Peak T_j=P_DM×Z_thJC+T_C

0.1

0.0001

0.001

0.01

0.1

Pulse Width : t1[s]

www.rohm.com

2015.11 - Rev.C

10/11

Data Sheet

RGT8NS65D

lInductive Load Switching Circuit and Waveform

Gate Drive Time

90%

D.U.T.

V_GE

D.U.T.

10%

90%

10%

I_C

t_d(on)

Fig.23 Inductive Load Circuit

t_d(off)

t_f

t_r

t_on

t_off

t_{rr ,}Q_rr

I_F

V_CE

di_F/dt

V_CE(sat)

I_rr

Fig.24 Inductive Load Waveform

Fig.25 Diode Reverce Recovery Waveform

www.rohm.com

2015.11 - Rev.C

11/11

Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions :

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-

cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in

this document.

7) The Products specified in this document are not designed to be radiation tolerant.

8) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, servers, solar cells, and power transmission systems.

9) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

11) ROHM has used reasonable care to ensur the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

12) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting

non-compliance with any applicable laws or regulations.

13) When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

regulations, including without limitation the US Export Administration Regulations and the Foreign

Exchange and Foreign Trade Act.

14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of

ROHM.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

www.rohm.com

R1102

RGT8NS65D(LPDS) [ROHM]

相关型号：

RGT8NS65D(TO-262)

RGT8TM65D

RGTH00TK65

RGTH00TK65D

RGTH00TS65

RGTH00TS65D

RGTH40TK65

RGTH40TK65D

RGTH40TS65

RGTH40TS65D

RGTH50TK65

RGTH50TK65D