RP1E090RP [ROHM]

4V Drive Pch MOSFET; 4V驱动P沟道MOSFET


型号：	RP1E090RP
厂家：	ROHM
描述：	4V Drive Pch MOSFET 4V驱动P沟道MOSFET 驱动
文件：	总6页 (文件大小：294K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

4V Drive Pch MOSFET

RP1E090RP

 Structure

 Dimensions (Unit : mm)

Silicon P-channel MOSFET

MPT6

(6)

(1)

(5)

(4)

Features

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (MPT6).

(2)

(3)

 Application

Switching

 Packaging specifications

 Inner circuit

Package

Taping

(6)

(5)

(4)

Type

Code

Basic ordering unit (pieces)

1000



RP1E090RP

∗2

(1) Source

(2) Source

(3) Gate

(4) Drain

(5) Drain

(6) Drain

∗1

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol

V_DSS

V_GSS

I_D

Limits

30

Unit

(1)

(2)

(3)

Drain-source voltage

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Gate-source voltage

20

Continuous

9

Drain current

Pulsed

I_DP

I_S

36

1.6

Continuous

Pulsed

Source current

(Body Diode)

I_SP

36

Power dissipation

P_D

2.0

C

Channel temperature

Tch

Tstg

150

Range of storage temperature

*1 Pw10s, Duty cycle1%

55 to +150

*2 Mounted on a ceramic board.

 Thermal resistance

Parameter

Symbol

Rth (ch-a)^*

Limits

62.5

Unit

Channel to Ambient

*Mounted on a ceramic board.

C / W

www.rohm.com

2010.06 - Rev.A

1/5

Data Sheet

RP1E090RP

ꢀ

 Electrical characteristics (Ta = 25C)

Parameter

Symbol

I_GSS

Min.

Typ.

Max.

Unit

A V_GS=±20V, V_DS=0V

I_D=1mA, V_GS=0V

A V_DS=30V, V_GS=0V

Conditions

Gate-source leakage

10

Drain-source breakdown voltage V_(BR)DSS

30

Zero gate voltage drain current

Gate threshold voltage

I_DSS

1

V_{GS (th)}

1.0

2.5

V_DS=10V, I_D=1mA

I_D=9A, V_GS=10V

I_D=9A, V_GS=4.5V

I_D=9A, V_GS=4.0V

I_D=9A, V_DS=10V

16.9

Static drain-source on-state

resistance

R_{DS (on)}

m

25.2

29.4

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

l Y_fsl

C_iss

C_oss

C_rss

3000

360

135

pF V_DS=10V

pF V_GS=0V

pF f=1MHz

t_d(on)

ns I_D=4.5A, V_DD15V

ns V_GS=10V

ns R_L=3.3

ns R_G=10

t_r

t_d(off)

t_f

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

Q_g

Q_gs

Q_gd

nC I_D=9A

nC V_DD-15V

nC V_GS=5V

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage

Symbol

Min.

Typ.

Max. Unit

1.2

Conditions

V_SD

I_s=9A, V_GS=0V

*Pulsed

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2/5

2010.06 - Rev.A

Data Sheet

RP1E090RP

ꢀ

 Electrical characteristic curves

100

V_DS= -10V

Pulsed

Ta=25°C

Pulsed

V_GS= -10V

V_GS= -4.5V

V_GS=-3.2V

Ta= 125℃

Ta= 75℃

Ta= 25℃

Ta= - 25℃

V_GS=-2.8V

V_GS= -4.0V

V_GS= -3.4V

V_GS= -3.2V

0.1

V_GS= -10V

V_GS= -4.5V

V_GS= -4.0V

0.01

0.001

Ta=25°C

Pulsed

V_GS= -2.4V

V_GS= -2.8V

0.2

0.4

0.6

0.8

DRAIN-SOURCE VOLTAGE : -V_DS[V]

GATE-SOURCE VOLTAGE : -V_GS[V]

Fig.3 Typical Transfer Characteristics

Fig.2 Typical output characteristics( Ⅱ)

Fig.1 Typical output characteristics( Ⅰ)

100

Ta=25°C

Pulsed

V_GS= -10V

Pulsed

V_GS= -4.5V

Pulsed

Ta= 125℃

Ta= 75℃

Ta= 25℃

Ta= - 25℃

Ta= 125℃

Ta= 75℃

Ta= 25℃

Ta= - 25℃

V_GS= -4.0V

V_GS= -4.5V

V_GS= -10V

0.1

DRAIN CURRENT : -I_D[A]

Fig.4 Static Drain-Source On-State

Fig.5 Static Drain-Source On-State

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅰ)

Resistance vs. Drain Current(Ⅱ)

Resistance vs. Drain Current(Ⅲ)

100

V_GS= -4.0V

Pulsed

V_DS= -10V

Pulsed

V_GS=0V

Pulsed

Ta= 125℃

Ta= 75℃

Ta= 25℃

Ta= - 25℃

Ta= 125℃

Ta= 75℃

Ta= 25℃

Ta= - 25℃

Ta= 125℃

Ta= 75℃

Ta= 25℃

Ta= - 25℃

0.1

0.01

0.1

0.2

0.4

0.6

0.8

1.2

DRAIN CURRENT : -I_D[A]

SOURCE - DRAIN VOLTAGE : -V_SD[V]

Fig.7 Static Drain-Source On-State

Resistance vs. Drain

Fig.9 Reverse Drain Current

vs. Sourse-Drain Voltage

Fig.8 Forward Transfer Admittance

vs. Drain Current

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3/5

2010.06 - Rev.A

Data Sheet

RP1E090RP

ꢀ

10000

1000

100

Ta=25C

V_DD= -15V

I_D=-9.0A

Ta=25°C

Pulsed

Ta=25C

V_DD= -15V

V_GS=-10V

t_d(off)

R_G=10

Pulsed

R_G=10

Pulsed

t_f

I_D= -9.0A

I_D= -4.5A

t_d(on)

t_r

TOTAL GATE CHARGE : Qg [nC]

Fig.12 Dynamic Input Characteristics

0.01

0.1

DRAIN-CURRENT :I_D[A]

GATE-SOURCE VOLTAGE : -V_GS[V]

Fig.11 SwitchingꢀCharacteristics

Fig.10 Static Drain-Source On-State

Resistance vs. Gate Source Voltage

1000

100

10000

1000

100

Operation in this area is limited by

R_DS(on)

P_W=100us

P_W=1ms

Ciss

Coss

DC operation

P_W= 10ms

Crss

Ta = 25C

Ta=25C

f=1MHz

V_GS=0V

0.1

0.01

Single Pulse

Mounted on a CERAMIC

board

0.01

0.1

100

0.1

DRAIN-SOURCE VOLTAGE : V_DS[V]

Fig.14 Maximum Safe Operating Aera

100

DRAIN-SOURCE VOLTAGE : -V_DS[V]

Fig.13 Typical Capacitance

vs. Drain-Source Voltage

0.1

Ta = 25℃

Single Pulse : 1Unit

Rth（ch-a）（t） = ｒ（t）×Rth（ch-a）

Rth（ch-a） = 62.5 ℃/W

0.01

0.001

0.001

0.01

0.1

100

1000

PULSE WIDTH : Pw(s)

Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width

www.rohm.com

4/5

2010.06 - Rev.A

Data Sheet

RP1E090RP

ꢀ

 Measurement circuits

Pulse Width

10%

50%

90%

D.U.T.

10%

90%

10%

90%

^DStd(on)

td(off)

toff

Fig.1-2 Switching Waveforms

Fig.1-1 Switching Time Measurement Circuit

VDS

D.U.T.

G(Const.)

Qgd

VDD

Charge

Fig.2-2 Gate Charge Waveform

Fig.2-1 Gate charge measurement circuit

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5/5

2010.06 - Rev.A

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R1010

RP1E090RP [ROHM]

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