RTF020P02 [ROHM]
DC-DC Converter (-20V, -2.0A); DC-DC转换器( -20V , -2.0A )型号: | RTF020P02 |
厂家: | ROHM |
描述: | DC-DC Converter (-20V, -2.0A) |
文件: | 总5页 (文件大小:127K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RTF020P02
Transistors
DC-DC Converter (−20V, −2.0A)
RTF020P02
zExternal dimensions (Unit : mm)
zFeatures
1) Low on-resistance. (80mΩ at 2.5V)
2) High power package.
3) High speed switching.
4) Low voltage drive. (2.5V)
TUMT3
2.0 0.1
0.85MAX
0.77 0.05
+0.1
0.3
−0.05
(3)
0 to 0.1
(1)
(2)
zApplications
DC-DC converter
0.65 0.65
1.3 0.1
0.17 0.05
Each lead has same dimensions
Abbreviated symbol : WM
zEquivalent circuit
zStructure
Silicon P-channel
MOS FET
(3)
(1)
∗2
zPackaging specifications
∗1
Package
Taping
Type
Code
TL
Basic ordering unit (pieces)
3000
(2)
RTF020P02
(1) Gate
(2) Source
(3) Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Rev.A
1/4
RTF020P02
Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
VDSS
VGSS
ID
Limits
Unit
V
−20
12
V
Continuous
2.0
A
Drain current
Pulsed
∗1
IDP
8
−0.6
−8
A
∗1
Source current
(Body diode)
Continuous
Pulsed
IS
A
ISP
A
∗2
Total power dissipation
Channel temperature
PD
0.8
W
°C
°C
Tch
150
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Tstg
−55 to +150
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Conditions
µA VGS= 12V, VDS=0V
Unit
Gate-source leakage
IGSS
−
−
−
10
−
Drain-source breakdown voltage V(BR) DSS −20
Zero gate voltage drain current
V
µA
V
ID= −1mA, VGS=0V
IDSS
−
−
−
60
65
120
−
640
110
85
12
15
40
12
7.0
1.6
2.0
−1
−2.0
85
90
165
−
−
−
−
−
−
−
−
−
−
−
V
DS= −20V, VGS=0V
DS= −10V, ID= −1mA
Gate threshold voltage
VGS (th) −0.7
V
−
−
−
mΩ ID= −2A, VGS= −4.5V
mΩ ID= −2A, VGS= −4V
mΩ ID= −2A, VGS= −2.5V
∗
Static drain-source on-state
resistance
RDS (on)
∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Yfs
Ciss
2.0
S
V
V
V
DS= −10V, ID= −1A
DS= −10V
GS=0V
−
−
−
−
−
−
−
−
pF
pF
pF
ns
ns
ns
ns
Coss
Crss
td (on)
f=1MHz
∗
∗
∗
∗
I
D
= −1A
DD −15V
V
V
R
t
r
GS= −4.5V
Turn-off delay time
Fall time
td (off)
tf
L
=15Ω
R
GS=10Ω
Total gate charge
Gate-source charge
Qg
nC VDD −15V
nC GS= −4.5V
nC ID= −2A
R
L
7.5Ω
Qgs
Qgd
−
−
V
RGS=10Ω
Gate-drain charge
∗Pulsed
Body diode characteristics (source-drain characteristics)
Forward voltage VSD
−
−
−1.2
V
IS= −0.6A, VGS=0V
Rev.A
2/4
RTF020P02
Transistors
zElectrical characteristic curves
10
1000
100
10
1000
100
10
VDS= −10V
Pulsed
Ta=25°C
Pulsed
VGS
Pulsed
= −4.5V
Ta=125°C
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=75°C
VGS= −2.5V
VGS= −4.0V
VGS= −4.5V
Ta=25°C
Ta= −25°C
0.1
0.01
0.001
0.1
1
10
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
0.1
1
10
DRAIN CURRENT : −ID (A)
DRAIN CURRENT : −ID (A)
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
Fig.1 Typical Transfer Characteristics
1000
1000
100
10
10
VGS
Pulsed
=
−
4V
VGS
Pulsed
=
−
2.5V
VGS=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
100
0.1
10
0.1
0.01
1
10
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
DRAIN CURRENT : −ID (A)
DRAIN CURRENT : −ID (A)
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage
8
10000
10000
Ta=25°C
VDD= −15V
VGS= −4.5A
RG=10Ω
Ta=25°C
Ta=25°C
f=1MHz
VGS=0V
VDD= −15V
7
ID= −2A
RG=10Ω
1000
100
10
6
Pulsed
Pulsed
1000
100
10
t
f
5
Ciss
t
d (off)
4
3
2
1
0
C
C
oss
rss
td (on)
t
r
1
0.01
0.1
1
10
0
1
2
3
4
5
6
7
8
0.01
0.1
1
10
100
DRAIN CURRENT : −ID (A)
TOTAL GATE CHARGE : Qg (nC)
DRAIN-SOURCE VOLTAGE : −VDS (V)
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
Fig.7 Typical Capacitance
vs. Drain-Source Voltage
Rev.A
3/4
RTF020P02
Transistors
zMeasurement circuits
Pulse Width
V
GS
ID
V
V
GS
10%
50%
V
DS
50%
90%
R
L
10%
90%
10%
D.U.T.
RG
V
DD
90%
tf
DS td(on)
td(off)
t
r
t
on
toff
Fig.11 Switching Waveforms
Fig.10 Switching Time Measurement Circuit
V
G
V
GS
ID
V
DS
Q
g
RL
V
GS
I
G(Const.)
D.U.T.
Q
gs
Qgd
RG
V
DD
Charge
Fig.12 Gate Charge Measurement Circuit
Fig.13 Gate Charge Waveforms
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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