RTL035N03FRATR [ROHM]
Small Signal Field-Effect Transistor, 3.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TUMT6, 6 PIN;型号: | RTL035N03FRATR |
厂家: | ROHM |
描述: | Small Signal Field-Effect Transistor, 3.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TUMT6, 6 PIN 开关 光电二极管 晶体管 |
文件: | 总3页 (文件大小:929K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RTL035N03FRA
Transistors
AEC-Q101 Qualified
2.5V Drive Nch MOSFET
RTL035N03FRA
zStructure
zDimensions (Unit : mm)
Silicon N-channel MOSFET
TUMT6
SOT-363T
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount package (TUMT6).
3) Low voltage drive (2.5V drive).
Abbreviated symbol : PM
zApplications
Switching
zPackaging specifications
zInner circuit
(6)
(5)
(4)
Package
Taping
TR
Type
Code
Basic ordering unit (pieces)
3000
∗2
RTL035N03FRA
∗1
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
VDSS
VGSS
ID
Limits
Unit
30
V
V
12
Continuous
3.5
A
Drain current
Pulsed
∗1
IDP
IS
14
0.8
A
Source current
(Body diode)
Continuous
A
∗1
∗2
Pulsed
ISP
14
A
Total power dissipation
Channel temperature
PD
1.0
W
°C
°C
Tch
Tstg
150
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
−55 to +150
zThermal resistance
Parameter
Symbol
Limits
125
Unit
∗
Channel to ambient
∗ Mounted on a ceramic board
Rth(ch-a)
°C/W
Rev.A
1/2
RTL035N03FRA
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Conditions
µA VGS=12V, VDS=0V
ID= 1mA, VGS=0V
µA VDS= 30V, VGS=0V
VDS= 10V, ID= 1mA
Unit
Gate-source leakage
IGSS
−
−
−
10
−
Drain-source breakdown voltage V(BR) DSS 30
V
Zero gate voltage drain current
Gate threshold voltage
IDSS
−
0.5
−
−
−
−
−
1
VGS (th)
1.5
56
59
79
−
−
−
−
−
−
−
−
6.4
V
40
42
56
−
350
90
55
9
mΩ ID= 3.5A, VGS= 4.5V
mΩ ID=3.5A, VGS= 4V
mΩ ID= 3.5A, VGS= 2.5V
Static drain-source on-state
resistance
∗
RDS (on)
∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Yfs
Ciss
3
S
VDS= 10V, ID= 3.5A
−
−
−
−
−
−
−
−
pF
pF
pF
ns
ns
ns
ns
VDS= 10V
Coss
Crss
td (on)
VGS=0V
f=1MHz
∗
∗
∗
VDD 15V
I
V
D
= 1.75A
t
r
25
32
20
4.6
0.8
1.5
GS= 4.5V
Turn-off delay time
Fall time
td (off)
R
R
L
=8.6Ω
∗
∗
tf
G
=10Ω
Total gate charge
Gate-source charge
Qg
nC VDD 15V VGS= 4.5V
∗
∗
ID= 3.5A
=4.3Ω
Qgs
Qgd
−
−
−
−
nC
nC
R
L
RG=10Ω
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Conditions
IS= 0.8A, VGS=0V
Unit
V
Forward voltage
V
SD
−
−
1.2
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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