RW1A020ZPT2R [ROHM]
Small Signal Field-Effect Transistor, 2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, WEMT6, 6 PIN;型号: | RW1A020ZPT2R |
厂家: | ROHM |
描述: | Small Signal Field-Effect Transistor, 2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, WEMT6, 6 PIN 开关 光电二极管 晶体管 |
文件: | 总13页 (文件大小:2548K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RW1A020ZP
ꢀꢀPch -12V -2A Small Signal MOSFET
Datasheet
ꢀꢀ
llOutline
ꢀ
SOT-563T
VDSS
-12V
105mΩ
±2A
WEMT6
RDS(on)(Max.)
ꢀ
ID
ꢀ
PD
0.7W
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
llInner circuit
llFeatures
1) Low on - resistance.
2) High power package
3) Low voltage drive(1.5V)
llPackaging pecifications
Embossed
Tape
Paking
Reel size (mm)
180
8
llApplication
Tape width (mm)
ype
Switching
Basic ordering unit (pcs)
Taping code
8000
T2R
ZE
Marking
llAbsolute maxm ratings (T = ,unless otherwise specified)
a
Parameter
Symbol
VDSS
ID
Value
-12
Unit
V
Drain - Sourcvoltage
Contindrain current
Puld drain current
±2
A
*1
IDP
±6
A
VGSS
Gte - Source voltage
±10
V
*2
PD
0.7
W
W
℃
℃
Power dissipation
*3
PD
0.4
Tj
Junction temperature
150
Tstg
Operating junction and storage temperature range
-55 to +150
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
www.rohm.com
© 2016 ROHMCo., Ltd. All rights reserved.
ꢀ ꢀ
1/11
20160905 - Rev.001
ꢀ ꢀ ꢀ ꢀꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
RW1A020ZP
Datasheet
ꢀ
ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
llThermal resistance
Values
Unit
Parameter
Symbol
Min.
Typ. Max.
*2
RthJA
-
-
-
-
179 ℃/W
Thermal resistance, junction - ambient
*3
RthJA
313 ℃/W
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
V(BR)DSS
Conditions
Unit
Min.
2
Typ. Max.
Drain - Source breakdown
voltage
V
GS
= 0V, I = -1mA
-
-
V
D
ΔV
ꢀ
ꢀI = -1mA
(BR)DSS
D
Breakdown voltage
-
-
-21.9
-
-
mV/℃
temperature coefficient
ΔT
ꢀ
ꢀ
ꢀ ꢀreferenced to 25
j
Zero gate voltage
drain current
IDSS
V
DS
= -12V, = 0V
-1
μA
S
IGSS
VGS(th)
ΔV
Gate - Source leakage current
Gate threshold voltage
V
V
= ±10V = 0V
-
-
±10
-1.0
μA
V
GS
DS
-6V, I = -1mA
-0.3
DS
D
ꢀ
= -1mA
GS(th)
D
Gate threshold voltage
temperature coefficient
-
2.4
-
mV/℃
ΔT
ꢀ
ꢀ
ꢀ referenced to ℃
j
V
V
V
= = -2A
-
-
-
-
-
75
105
150
200
20
105
145
225
400
-
GS
GS
G
GS
D
= -2., I = -1A
D
Static drain - source
on - state resistance
*4
RDS(on)
mΩ
= -1.8V, I = -1A
D
= -1.5V, I = -0.4A
D
|*4
Gate resistance
f = 1MHz, open drain
Ω
S
Forward Tsfer
Admittance
V
DS
= -6V, I = -2A
2
-
-
fs
D
Pw≦10μs , Duty cycle≦1%
*2 Mounted on a ceramic board (30×30×0.8mm)
2
*3 Mounted on a FR4 (12×20×0.8mm,Cu pad:240mm )
*4 Pulsed
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀꢀ ꢀ ꢀ ꢀ ꢀꢀ ꢀ ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
www.rohm.com
© 2016 ROHMCo., Ltd. All rights reserved.
2/11
20160905 - Rev.001
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
RW1A020ZP
Datasheet
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Input capacitance
Symbol
Conditions
= 0V
Unit
pF
Min.
Typ.
770
75
Max.
Ciss
Coss
Crss
V
V
-
-
-
-
-
-
-
-
-
-
-
-
GS
= -6V
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
DS
f = 1MHz
60
*4
td(on)
V
⋍ -6V,V = -4.5V
DD GS
10
tr*4
I = -1A
D
ns
*4
td(off)
R ⋍ 6Ω
Turn - off delay time
Fall time
65
L
tf*4
R = 10Ω
35
G
llGate charge characteristics (Ta = 25°C)
Values
Typ.
6.5
Parameter
Symbol
Conditions
Unit
nC
Min.
Max.
*4
Qg
Total gate charge
-
-
-
-
-
-
V
⋍ -6V,
I = -2
DD
Gate - Source charge
Gate - Drain charge
1.3
D
V
GS
= -
*4
Qgd
0.8
llBody diode elerical characterics (Source-Drain) (Ta = 25°C)
Values
Paameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
-0.5
-6
IS
Conuous forward current
Plse forward current
Forward voltage
-
-
-
-
-
-
A
A
V
T = 25℃
a
*1
ISP
*4
VSD
V
GS
= 0V, I = -2A
S
-1.2
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
www.rohm.com
© 2016 ROHMCo., Ltd. All rights reserved.
3/11
20160905 - Rev.001
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
RW1A020ZP
Datasheet
llElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transiermal
Fig.4 Single Pulse Maximum Power
ꢀꢀꢀꢀResistance vs. Pulse Width
ꢀꢀꢀꢀdissipation
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
www.rohm.com
© 2016 ROHMCo., Ltd. All rights reserved.
4/11
20160905 - Rev.001
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
RW1A020ZP
Datasheet
llElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage
Fig.8 Typical Transfer Characteristics
ꢀꢀꢀꢀꢀJunction Temperature
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
www.rohm.com
© 2016 ROHMCo., Ltd. All rights reserved.
5/11
20160905 - Rev.001
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
RW1A020ZP
Datasheet
llElectrical characteristic curves
Fig.9 Gate Threshold Voltage vs.
Fig.10 Forward Transfer Admittance vs.
ꢀꢀꢀꢀꢀꢀJunction Temperature
ꢀꢀꢀꢀꢀDrain Current
Fig.11 Drain Current DeraCurve
Fig.12 Static Drain - Source On - State
ꢀꢀꢀResistance vs. Gate Source Voltage
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
www.rohm.com
© 2016 ROHMCo., Ltd. All rights reserved.
6/11
20160905 - Rev.001
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
RW1A020ZP
Datasheet
llElectrical characteristic curves
Fig.13 Static Drain - Source On - State
ꢀꢀꢀResistance vs. Junction Temperature
Fig.14 Static Drain - Source On - State
ꢀꢀꢀꢀꢀResistance vs. Drain Current(I)
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
www.rohm.com
© 2016 ROHMCo., Ltd. All rights reserved.
7/11
20160905 - Rev.001
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
RW1A020ZP
Datasheet
llElectrical characteristic curves
Fig.15 Static Drain - Source On - State
Fig.16 Static Drain - Source On - State
ꢀꢀꢀꢀꢀResistance vs. Drain Current(II)
ꢀꢀꢀꢀꢀResistance vs. Drain Current(III)
Fig.17 Static Drain - Sourn - State
Fig.18 Static Drain - Source On - State
ꢀꢀꢀꢀꢀResistance vs. Drain Current(IV)
ꢀꢀꢀꢀꢀResistance vs. Drain Current (V)
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
www.rohm.com
© 2016 ROHMCo., Ltd. All rights reserved.
8/11
20160905 - Rev.001
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
RW1A020ZP
Datasheet
llElectrical characteristic curves
Fig.19 Typical Capacitance vs.
Fig.20 Switching Characteristics
ꢀꢀꢀꢀꢀꢀDrain - Source Voltage
Fig.21 Dynamic Input Christics
Fig.22 Source Current vs.
ꢀꢀꢀꢀꢀꢀSource Drain Voltage
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
www.rohm.com
© 2016 ROHMCo., Ltd. All rights reserved.
9/11
20160905 - Rev.001
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
RW1A020ZP
Datasheet
llMeasurement circuits
Fig. 1-1 SWITCHING TIME MEASUREMENT CIRCUIT
Fig. 2-1 GATE CHARGE MEASUREMENT CIRCUIT
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
Fig. 1-2 SWITCHING WAVEFORMS
Fig. 2-2 GATE CHARGE EFORM
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
llNotice
This product might cause chip aging and breakdoder the large electrified environment.
Please consider to design SD protection circuit.
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
www.rohm.com
© 2016 ROHMCo., Ltd. All rights reserved.
10/11
20160905 - Rev.001
RW1A020ZP
ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ
Datasheet
llDimensions
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
www.rohm.com
© 2016 ROHMCo., Ltd. All rights reserved.
11/11
20160905 - Rev.001
Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or able for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products or Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality contsystem. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implemenyour own responsibilities, adequate
safety measures including but not limited to fail-safe design against the pical ury, damage to any property, which
a failure or malfunction of our Products may cause. The following are exaof safety measures:
[a] Installation of protection circuits or other protective devices to imsystem safety
[b] Installation of redundant circuits to reduce the impact of singr multiple circuit faiure
3. Our Products are designed and manufactured for use under stdard conditions d not under any special or
extraordinary environments or conditions, as exemplifielow. Accordingly, OHM shall not be in any way
responsible or liable for any damages, expenses or losses isig from the usof aROHM’s Products under any
special or extraordinary environments or conditionsf you intend to uProducts under any special or
extraordinary environments or conditions (as exemfied elow), youindeeverification and confirmation of
product performance, reliability, etc, prior to use, st necessary:
[a] Use of our Products in any types of liquid, iluding water, oils, chemals, and organic solvents
[b] Use of our Products outdoors or in pcwhere the Producae xposed to direct sunlight or dust
[c] Use of our Products in places whthe Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places whethe Products are oed to static electricity or electromagnetic waves
[e] Use of our Products in proto heat-prodmponents, plastic cords, or other flammable items
[f] Sealing or coating our Prowith resin or ing materials
[g] Use of our Products without cleaning residue o(even if you use no-clean type fluxes, cleaning residue of
flux is recommende; or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Pcts in places subjecdw condensation
4. The Producnot subject to radiation-proof design.
5. Please verify aconfirm chacteris f the final or mounted products in using the Products.
6. In pular, if a transienad arge amount of load applied in a short period of time, such as pulse. is applied,
confirman of performance haracteristics after on-board mounting is strongly recommended. Avoid applying power
ding normal rated powerexceeding the power rating under steady-state loading condition may negatively affect
ct performance and reliability.
De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. e take proper
caution in your manufacturing process and storage so that voltage exceeding the Products mimung will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body uipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stn the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability oducts out of recommened storage time period
may be degraded. It is strongly recommended to confirm solderlity fore using Products owhich storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is icaed on a carton with symbol. Otherwise bent leads
may occur due to excessive stress applied when droppof a carton.
4. Use Products within the specified time after openia midity barrier bagaking irequired before using Products of
which storage time is exceeding the recommended orage time period
Precaution for Product Label
A two-dimensional barcode printed on ROHrodcts label is for M’s internal use only.
Precaution for Disposition
When disposing Products please dispoem properly uuthorized industry waste company.
Precaution for Foreign Exchane ad Foreign Trade act
Since concerned goods mbe fallen under listed ems of export control prescribed by Foreign exchange and Foreign
trade act, please consult ROHM in case of eo
Precaution Regantellectual Propey Rights
1. All informationd data including not limited to application example contained in this document is for reference
only. ROHM donot warrant at fgoing information or data will not infringe any intellectual property rights or any
otherhts of any third party reing such information or data.
2. ROHM ll not have any bligations where the claims, actions or demands arising from the combination of the
cts with other articles suh as components, circuits, systems or external equipment (including software).
. cense, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PGA-E
Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
相关型号:
RW1A025APT2CR
Small Signal Field-Effect Transistor, 2.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, WEMT6, 6 PIN
ROHM
RW1A025APT2R
Small Signal Field-Effect Transistor, 2.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, WEMT6, 6 PIN
ROHM
RW1A030APT2CR
Small Signal Field-Effect Transistor, 3A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, WEMT6, 6 PIN
ROHM
RW1A107M1012MSS
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10V, 100uF, THROUGH HOLE MOUNT, RADIAL LEADED
SAMWHA
RW1A337M12020SS
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10V, 330uF, THROUGH HOLE MOUNT, RADIAL LEADED
SAMWHA
RW1A476M0811MPG
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10V, 47uF, THROUGH HOLE MOUNT, RADIAL LEADED
SAMWHA
RW1C015UNT2R
Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, WEMT6, 6 PIN
ROHM
RW1C020UNT2R
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, WEMT6, 6 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明