RZR020P01 [ROHM]

1.5V Drive Pch MOSFET; 1.5V驱动P沟道MOSFET


型号：	RZR020P01
厂家：	ROHM
描述：	1.5V Drive Pch MOSFET 1.5V驱动P沟道MOSFET 驱动
文件：	总5页 (文件大小：221K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

1.5V Drive Pch MOSFET

RZR020P01

zStructure

zDimensions (Unit : mm)

Silicon P-channel MOSFET

TSMT3

1.0MAX

2.9

0.4

0.85

0.7

(

)

zFeatures

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small and Surface Mount Package

(TSMT3).

( )

0.95 0.95

1.9

0.16

(1) Gate

Each lead has same dimensions

(2) Source

(3) Drain

4) Low voltage drive (1.5V).

Abbreviated symbol : ZE

zApplications

zInner circuit

Switching

(3)

zPackaging specifications

∗2

Package

Taping

(1)

Type

Code

Basic ordering unit (pieces)

3000

∗1

RZR020P01

(1) Gate

(2)

(2) Source

(3) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Limits

Unit

V_DSS

V_GSS

I_D

−12

Continuous

Pulsed

Drain current

∗1

I_DP

Source current

(Body diode)

Continuous

Pulsed

I_S

−0.8

−6

1.0

∗1

∗2

I_SP

Total power dissipation

Channel temperature

P_D

°C

Tch

Tstg

150

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 When mounted on a ceramic board.

−55 to +150

zThermal resistance

Parameter

Symbol

Rth (ch-a) ^∗

Limits

125

Unit

Channel to ambient

∗ When mounted on a ceramic board.

°C / W

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2009.03 - Rev.A

1/4

RZR020P01

Data Sheet

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max.

Conditions

µA V_GS= 10V, V_DS=0V

Unit

Gate-source leakage

I_GSS

−

Drain-source breakdown voltage V_{(BR) DSS}−12

Zero gate voltage drain current

µA

I_D= −1mA, V_GS=0V

I_DSS

−

−1

−1.0

105

145

225

400

−

V_DS= −12V, V_GS=0V

_DS= −6V, I_D= −1mA

Gate threshold voltage

V_{GS (th)}−0.3

−

105

150

200

−

770

6.5

1.3

0.8

mΩ I_D= −2A, V_GS= −4.5V

mΩ I_D= −1A, V_GS= −2.5V

mΩ I_D= −1A, V_GS= −1.8V

Static drain-source on-state

resistance

−

∗

R_{DS (on)}

I_D= −0.4A, V_GS= −1.5V

V_DS= −6V, I_D= −2A

mΩ

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Y_fs

C_iss

C_oss

_DS= −6V

_GS=0V

C_rss

t_{d (on)}

pF f=1MHz

∗

DD −6V

= −1A

GS= −4.5V

t_{d (off)}

t_f

Turn-off delay time

Fall time

6Ω

=10Ω

Total gate charge

Gate-source charge

Q_g

Q_gs

Q_gd

nC V_DD−6V, I_D= −2A

_GS= −4.5V

3Ω, R =10Ω

Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter

Symbol Min. Typ. Max.

Conditions

I_S= −2A, V_GS=0V

Unit

∗

Forward voltage

V_SD

−

−1.2

∗ Pulsed

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2009.03 - Rev.A

2/4

RZR020P01

Data Sheet

zElectrical characteristics curves

3.5

Ta=25°C

-10V

Ta=25°C

Pulsed

V_DS= -6V

Pulsed

-10V

Pulsed

3.5

-4.5V

-1.8V

-2.5V

2.5

-4.5V

-2.5V

-1.8V

0.1

-1.5V

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= - 25°C

1.5

-1.6V

V_GS= -1.2V

0.01

0.001

V_GS= -1.5V

0.5

1.5

0.2

0.4

0.6

0.8

DRAIN-SOURCE VOLTAGE : -V_DS[V]

Fig.2 Typical Output Characteristics(

DRAIN-SOURCE VOLTAGE : -V_DS[V]

GATE-SOURCE VOLTAGE : -V_GS[V]

Fig.3 Typical Transfer Characteristics

Fig.1 Typical Output Characteristics(

)

Ⅱ

Ⅰ

1000

100

1000

100

Ta=25°C

Pulsed

V_GS= -2.5V

Pulsed

V_GS= -4.5V

Pulsed

V_GS= -1.5V

V_GS= -1.8V

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

V_GS= -2.5V

V_GS= -4.5V

100

0.1

DRAIN-CURRENT : -I_D[A]

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current(

Fig.5 Static Drain-Source On-State

Resistance vs. Drain Current(

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current(

)

Ⅲ

Ⅰ

Ⅱ

1000

100

1000

100

V_GS= -1.5V

Pulsed

V_DS= -6V

Pulsed

V_GS= -1.8V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

Ta=25°C

Ta=75°C

Ta=125°C

0.1

0.01

0.1

0.01

0.1

DRAIN-CURRENT : -I_D[A]

Fig.7 Static Drain-Source On-State

Resistance vs. Drain Current(

Fig.8 Static Drain-Source On-State

Resistance vs. Drain Current(

Fig.9 Forward Transfer Admittance

vs. Drain Current

)

Ⅳ

)

Ⅴ

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2009.03 - Rev.A

3/4

RZR020P01

Data Sheet

500

400

300

200

100

1000

100

Ta=25°C

Pulsed

Ta=25°C V_DD= -6V

V_GS=0V

V_GS=-4.5V R_G=10Ω

Pulsed

t_d(off)

Pulsed

t_f

I_D= -1A

I_D= -2A

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

0.1

t_r

t_d(on)

0.01

0.5

1.5

0.01

0.1

DRAIN-CURRENT : -I_D[A]

SOURCE-DRAIN VOLTAGE : -V_SD[V]

GATE-SOURCE VOLTAGE : -V_GS[V]

Fig.11 Static Drain-Source On-State

Resistance vs. Gate Source Voltage

Fig.12 Switching Characteristics

Fig.10 Reverse Drain Current

vs. Sourse-Drain Voltage

10000

1000

100

Ta=25°C

f=1MHz

V_GS=0V

Ciss

Coss

Ta=25°C

V_DD= -6V

I_D= -2.0A

R_G= 10Ω

Pulsed

Crss

0.01

0.1

100

DRAIN-SOURCE VOLTAGE : -V_DS[V]

TOTAL GATE CHARGE : Qg [nC]

Fig.13 Dynamic Input Characteristics

Fig.14 Typical Capacitance

vs. Drain-Source Voltage

zMeasurement circuit

Pulse width

VGS

VDS

10%

50%

90%

D.U.T.

10%

90%

10%

90%

^DStd(on)

td(off)

toff

Fig.1-1 Switching Time Measurement Circuit

Fig.1-2 Switching Waveforms

VDS

G (Const.)

D.U.T.

Qgd

VDD

Charge

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

zNotice

This product might cause chip aging and breakdown under the large electrified environment.

Please consider to design ESD protection circuit.

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2009.03 - Rev.A

4/4

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Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

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Great care was taken in ensuring the accuracy of the information speciﬁed in this document.

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R0039

RZR020P01 [ROHM]

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