SP8J65TB [ROHM]
Power Field-Effect Transistor, 7A I(D), 30V, 0.029ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8;
| 型号： | SP8J65TB |
| 厂家： | 
ROHM |
| 描述： | Power Field-Effect Transistor, 7A I(D), 30V, 0.029ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SP8J65
Transistors
4V Drive Pch+Pch MOSFET
SP8J65
zStructure
zDimensions (Unit : mm)
Silicon P-channel MOSFET
SOP8
zFeatures
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
zApplications
Each lead has same dimensions
Switching
zPackaging specifications
zInner circuit
(8)
(7)
(6)
(5)
Package
Taping
TB
Type
Code
Basic ordering unit (pieces)
2500
SP8J65
∗2
∗2
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗1
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25qC)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Symbol
VDSS
VGSS
ID
Limits
−30
20
Unit
V
V
Continuous
7.0
A
Drain current
Pulsed
∗1
IDP
28
A
Continuous
IS
−1.6
−28
2.0
A
Source current
(Body diode)
∗1
∗2
Pulsed
ISP
A
W / TOTAL
W / ELEMENT
°C
Total power dissipation
PD
1.4
Channel temperature
Tch
150
Range of Storage temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Tstg
−55 to +150
°C
1/5
SP8J65
Transistors
zElectrical characteristics (Ta=25qC)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max.
Conditions
μA VGS= 20V, VDS=0V
ID= −1mA, VGS=0V
μA VDS= −30V, VGS=0V
VDS= −10V, ID= −1mA
Unit
Gate-source leakage
IGSS
−
−
−
−
−
10
−
Drain-source breakdown voltage V(BR) DSS −30
Zero gate voltage drain current
V
IDSS
−
−1
Gate threshold voltage
VGS (th) −1.0
−2.5
V
−
−
−
21.5 29.0
29.0 39.0
31.0 40.8
mΩ ID= −7A, VGS= −10V
mΩ ID= −3.5A, VGS= −4.5V
mΩ ID= −3.5A, VGS= −4.0V
Static drain-source on-state
resistance
∗
∗
∗
∗
RDS (on)
∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Yfs
Ciss
6.0
−
1200
170
170
12
−
−
−
−
−
−
−
−
−
−
−
S
VDS= −10V, ID= −7A
VDS= −10V
VGS=0V
−
−
−
−
−
−
−
−
pF
pF
pF
ns
ns
ns
ns
nC
nC
Coss
Crss
td (on)
f=1MHz
∗
∗
∗
∗
∗
∗
∗
V
DD −15V
I
D
= −3.5A
GS= −10V
=4.3Ω
=10Ω
t
r
40
V
Turn-off delay time
Fall time
td (off)
tf
80
R
L
65
R
G
VDD −15V
Total gate charge
Gate-source charge
Qg
18
ID= −7A
Qgs
Qgd
−
−
3.5
6.5
VGS= −5V
Gate-drain charge
∗Pulsed
nC RL=2.1Ω / RG=10Ω
zBody diode characteristics (Source-drain) (Ta=25qC)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Forward voltage
Symbol Min. Typ. Max.
Conditions
IS= −7A, VGS=0V
Unit
V
∗
V
SD
−
−
−1.2
∗Pulsed
2/5
SP8J65
Transistors
zElectrical characteristic curves
10
1
20
20
18
16
14
12
10
8
VDS= -10V
Pulsed
Ta=25°C
Ta=25°C
Pulsed
18
16
14
12
10
8
Pulsed
VGS= -10V
VGS= -4.5V
VGS= -4.0V
VGS= -3.5V
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
VGS= -10V
VGS= -4.0V
VGS= -3.0V
VGS= -3.0V
VGS= -2.5V
0.1
VGS= -2.5V
6
6
4
4
2
2
VGS= -2.2V
0
0
0.01
0.0
0.2
0.4
0.6
0.8
1.0
10
10
0
2
4
6
8
10
1.0
1.5
2.0
2.5
3.0
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.1 Typical Output Characteristics(
DRAIN-SOURCE VOLTAGE : -VDS[V]
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.3 Typical Transfer Characteristics
)
Fig.2 Typical Output Characteristics(
)
㸈
㸇
100
10
1
100
10
1
100
VGS= -4.5V
Pulsed
VGS= -10V
Pulsed
Ta=25°C
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
VGS= -4.0V
VGS= -4.5V
VGS= -10V
1
0.1
1
0.1
1
10
0.1
1
10
DRAIN-CURRENT : -ID[A]
DRAIN-CURRENT : -ID[A]
DRAIN-CURRENT : -ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(
)
)
㸈
)
㸉
㸇
100
10
100
10
1
100
10
1
VGS= -4.0V
Pulsed
VGS=0V
Pulsed
VDS= -10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Ta=125°C
Ta=75°C
Ta=25°C
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
Ta= -25°C
0.1
0.01
0
0.1
1
0.1
1.0
DRAIN-CURRENT : -ID[A]
10.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
DRAIN-CURRENT : -ID[A]
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(
Fig.8 Forward Transfer Admittance
vs. Drain Current
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
)
㸊
3/5
SP8J65
Transistors
10
8
100
90
80
70
60
50
40
30
20
10000
1000
100
10
Ta=25°C
Pulsed
Ta=25°C
DD= -15V
GS=-10V
G=10ȍ
Pulsed
V
V
td(off)
R
tf
ID= -7.0A
6
ID= -3.5A
Ta=25°C
4
V
DD= -15V
ID= -7.0A
G=10ȍ
2
R
td(on)
Pulsed
tr
0
10
0
1
0
10
20
30
40
5
10
15
0.01
0.1
1
10
GATE-SOURCE VOLTAGE : -VGS[V]
DRAIN-CURRENT : -ID[A]
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Fig.11 Switching Characteristics
10000
1000
100
1000
Operation in this area is limited by RDS(ON)
(VGS=-10V)
100
10
Ciss
P
W
=100us
P
W
= 10ms
Crss
Coss
1
W
P =1ms
Ta=25°C
f=1MHz
0.1
0.01
Ta = 25°C
VGS=0V
Single Pulse
DC operation
100
MOUNTED ON SERAMIC BOARD
10
0.1
1
10
0.01
0.1
1
10
100
GATE-SOURCE VOLTAGE : -VDS[V]
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.14 Maximum Safe Operating Aera
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
10
1
0.1
Ta = 25°C
Single Pulse : 1Unit
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 89.3 °C/W
0.01
<Mounted on a SERAMIC board>
0.001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
4/5
SP8J65
Transistors
zMeasurement circuits
Pulse Width
V
GS
ID
V
GS
10%
50%
V
DS
50%
90%
RL
D.U.T.
10%
10%
90%
RG
V
DD
90%
V
DS td(on)
td(off)
t
r
tf
t
on
toff
Fig.16 Switching Time Test Circuit
Fig.17 Switching Time Waveforms
VG
VGS
ID
V
DS
Q
g
RL
V
GS
I
G(Const.)
D.U.T.
Q
gs
Qgd
RG
VDD
Charge
Fig.18 Gate Charge Test Circuit
Fig.19 Gate Charge Waveform
! ! ! ! ! ! ! ! ! ! ! ! ! !
5/5
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Appendix1-Rev2.0
相关型号：
SP8K24FRATB
Power Field-Effect Transistor, 6A I(D), 45V, 0.037ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
ROHM
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